Catalog footprint

What is connected

51works
35topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

51 published item(s)

preprint2026arXiv

Efficient State Preparation for Quantum Machine Learning

One of the key considerations in the development of Quantum Machine Learning (QML) protocols is the encoding of classical data onto a quantum device. In this chapter we introduce the Matrix Product State representation of quantum systems and show how it may be used to construct circuits which encode a desired state. Putting this in the context of QML we show how this process may be modified to give a low depth approximate encoding and crucially that this encoding does not hinder classification accuracy and is indeed exhibits an increased robustness against classical adversarial attacks. This is illustrated by demonstrations of adversarially robust variational quantum classifiers for the MNIST and FMNIST dataset, as well as a small-scale experimental demonstration on a superconducting quantum device.

preprint2026arXiv

Quantum Error Correction and Detection for Quantum Machine Learning

At the intersection of quantum computing and machine learning, quantum machine learning (QML) is poised to revolutionize artificial intelligence. However, the vulnerability of the current generation of quantum computers to noise and computational error poses a significant barrier to this vision. Whilst quantum error correction (QEC) offers a promising solution for almost any type of hardware noise, its application requires millions of qubits to encode even a simple logical algorithm, rendering it impractical in the near term. In this chapter, we examine strategies for integrating QEC and quantum error detection (QED) into QML under realistic resource constraints. We first quantify the resource demands of fully error-corrected QML and propose a partial QEC approach that reduces overhead while enabling error correction. We then demonstrate the application of a simple QED method, evaluating its impact on QML performance and highlighting challenges we have yet to overcome before we achieve fully fault-tolerant QML.

preprint2026arXiv

Time-Dynamic Circuits for Fault-Tolerant Shift Automorphisms in Quantum LDPC Codes

Quantum low-density parity-check (qLDPC) codes have emerged as a promising approach for realizing low-overhead logical quantum memories. Recent theoretical developments have established shift automorphisms as a fundamental building block for completing the universal set of logical gates for qLDPC codes. However, practical challenges remain because the existing SWAP-based shift automorphism yields logical error rates that are orders of magnitude higher than those for fault-tolerant idle operations. In this work, we address this issue by dynamically varying the syndrome measurement circuits to implement the shift automorphisms without reducing the circuit distance. We benchmark our approach on both twisted and untwisted weight-6 generalized toric codes, including the gross code family. Our time-dynamic circuits for shift automorphisms achieve performance comparable to the idle operations under the circuit-level noise model (SI1000). Specifically, the dynamic circuits achieve more than an order of magnitude reduction in logical error rates relative to the SWAP-based scheme for the gross code at a physical error rate of $10^{-3}$, employing the BP-OSD decoder. Our findings improve both the error resilience and the time overhead of the shift automorphisms in qLDPC codes. Furthermore, our work can lead to alternative syndrome extraction circuit designs, such as leakage removal protocols, providing a practical pathway to utilizing dynamic circuits that extend beyond surface codes towards qLDPC codes.

preprint2025arXiv

Symmetry-Checking in Band Structure Calculations on a Noisy Quantum Computer

Band crossings in electronic band structures play an important role in determining the electronic, topological, and transport properties in solid-state systems, making them central to both condensed matter physics and materials science. The emergence of noisy intermediate-scale quantum (NISQ) processors has sparked great interest in developing quantum algorithms to compute band structure properties of materials. While significant research has been reported on computing ground state and excited state energy bands in the presence of noise that breaks the degeneracy, identifying the symmetry at crossing points using quantum computers is still an open question. In this work, we propose a method for identifying the symmetry of bands around crossings and anti-crossings in the band structure of bilayer graphene with two distinct configurations on a NISQ device. The method utilizes eigenstates at neighbouring $\mathbf{k}$ points on either side of the touching point to recover the local symmetry by implementing a character-checking quantum circuit that uses ancilla qubit measurements for a probabilistic test. We then evaluate the performance of our method under a depolarizing noise model, using four distinct matrix representations of symmetry operations to assess its robustness. Finally, we demonstrate the reliability of our method by correctly identifying the correct band crossings of AA-stacked bilayer graphene around $K$ point, using the character-checking circuit implemented on a noisy IBM quantum processor $ibm\_marrakesh$.

preprint2025arXiv

Variational Quantum Machine Learning with Quantum Error Detection

Quantum machine learning (QML) is an emerging field that promises advantages such as faster training, improved reliability and superior feature extraction over classical counterparts. However, its implementation on quantum hardware is challenging due to the noise inherent in these systems, necessitating the use of quantum error correction (QEC) codes. Current QML research remains primarily theoretical, often assuming noise-free environments and offering little insight into the integration of QEC with QML implementations. To address this, we investigate the performance of a simple, parity-classifying Variational Quantum Classifier (VQC) implemented with the [[4,2,2]] error-detecting stabiliser code in a simulated noisy environment, marking the first study into the implementation of a QML algorithm with a QEC code. We invoke ancilla qubits to logically encode rotation gates, and classically simulate the logically-encoded VQC under two simple noise models representing gate noise and environmental noise. We demonstrate that the stabiliser code improves the training accuracy at convergence compared to noisy implementations without QEC. However, we find that the effectiveness and reliability of error detection is contingent upon keeping the ancilla qubit error rates below a specific threshold, due to the propagation of ancilla errors to the physical qubits. Our results provide an important insight: for QML implementations with QEC codes that both require ancilla qubits for logical rotations and cannot fully correct errors propagated between ancilla and physical qubits, the maximum achievable accuracy of the QML model is limited. This highlights the need for additional error correction or mitigation strategies to support the practical implementation of QML algorithms with QEC on quantum devices.

preprint2022arXiv

An Overview of Structural Coverage Metrics for Testing Neural Networks

Deep neural network (DNN) models, including those used in safety-critical domains, need to be thoroughly tested to ensure that they can reliably perform well in different scenarios. In this article, we provide an overview of structural coverage metrics for testing DNN models, including neuron coverage (NC), k-multisection neuron coverage (kMNC), top-k neuron coverage (TKNC), neuron boundary coverage (NBC), strong neuron activation coverage (SNAC) and modified condition/decision coverage (MC/DC). We evaluate the metrics on realistic DNN models used for perception tasks (including LeNet-1, LeNet-4, LeNet-5, and ResNet20) as well as on networks used in autonomy (TaxiNet). We also provide a tool, DNNCov, which can measure the testing coverage for all these metrics. DNNCov outputs an informative coverage report to enable researchers and practitioners to assess the adequacy of DNN testing, compare different coverage measures, and to more conveniently inspect the model's internals during testing.

preprint2022arXiv

AntidoteRT: Run-time Detection and Correction of Poison Attacks on Neural Networks

We study backdoor poisoning attacks against image classification networks, whereby an attacker inserts a trigger into a subset of the training data, in such a way that at test time, this trigger causes the classifier to predict some target class. %There are several techniques proposed in the literature that aim to detect the attack but only a few also propose to defend against it, and they typically involve retraining the network which is not always possible in practice. We propose lightweight automated detection and correction techniques against poisoning attacks, which are based on neuron patterns mined from the network using a small set of clean and poisoned test samples with known labels. The patterns built based on the mis-classified samples are used for run-time detection of new poisoned inputs. For correction, we propose an input correction technique that uses a differential analysis to identify the trigger in the detected poisoned images, which is then reset to a neutral color. Our detection and correction are performed at run-time and input level, which is in contrast to most existing work that is focused on offline model-level defenses. We demonstrate that our technique outperforms existing defenses such as NeuralCleanse and STRIP on popular benchmarks such as MNIST, CIFAR-10, and GTSRB against the popular BadNets attack and the more complex DFST attack.

preprint2022arXiv

Comparative analysis of error mitigation techniques for variational quantum eigensolver implementations on IBM quantum system

Quantum computers are anticipated to transcend classical supercomputers for computationally intensive tasks by exploiting the principles of quantum mechanics. However, the capabilities of the current generation of quantum devices are limited due to noise or errors, and therefore implementation of error mitigation and/or correction techniques is pivotal to reliably process quantum algorithms. In this work, we have performed a comparative analysis of the error mitigation capability of the [[4,2,2]] quantum error-detecting code (QEC method), duplicate circuit technique, and the Bayesian read-out error mitigation (BREM) approach in the context of proof-of-concept implementations of variational quantum eigensolver (VQE) algorithm for determining the ground state energy of H$_2$ molecule. Based on experiments on IBM quantum device, our results show that the duplicate circuit approach performs superior to the QEC method in the presence of the hardware noise. A significant impact of cross-talk noise was observed when multiple mappings of the duplicate circuit and the QEC method were implemented simultaneously $-$ again the duplicate circuit approach overall performed better than the QEC method. To gain further insights into the performance of the studied error mitigation techniques, we also performed quantum simulations on IBM system with varying strengths of depolarising circuit noise and read-out errors which further supported the main finding of our work that the duplicate circuit offer superior performance towards mitigating of errors when compared to the QEC method. Our work reports a first assessment of the duplicate circuit approach for a quantum algorithm implementation and the documented evidence will pave the way for future scalable implementations of the duplicated circuit techniques for the error-mitigated practical applications of near-term quantum computers.

preprint2022arXiv

Multiplier with Reduced Activities and Minimized Interconnect for Inner Product Arrays

We present a pipelined multiplier with reduced activities and minimized interconnect based on online digit-serial arithmetic. The working precision has been truncated such that $p<n$ bits are used to compute $n$ bits product, resulting in significant savings in area and power. The digit slices follow variable precision according to input, increasing upto $p$ and then decreases according to the error profile. Pipelining has been done to achieve high throughput and low latency which is desirable for compute intensive inner products. Synthesis results of the proposed designs have been presented and compared with the non-pipelined online multiplier, pipelined online multiplier with full working precision and conventional serial-parallel and array multipliers. For $8, 16, 24$ and $32$ bit precision, the proposed low power pipelined design show upto $38\%$ and $44\%$ reduction in power and area respectively compared to the pipelined online multiplier without working precision truncation.

preprint2022arXiv

Optimizing Indoor Navigation Policies For Spatial Distancing

In this paper, we focus on the modification of policies that can lead to movement patterns and directional guidance of occupants, which are represented as agents in a 3D simulation engine. We demonstrate an optimization method that improves a spatial distancing metric by modifying the navigation graph by introducing a measure of spatial distancing of agents as a function of agent density (i.e., occupancy). Our optimization framework utilizes such metrics as the target function, using a hybrid approach of combining genetic algorithm and simulated annealing. We show that within our framework, the simulation-optimization process can help to improve spatial distancing between agents by optimizing the navigation policies for a given indoor environment.

preprint2022arXiv

Performance analysis of coreset selection for quantum implementation of K-Means clustering algorithm

Quantum computing is anticipated to offer immense computational capabilities which could provide efficient solutions to many data science problems. However, the current generation of quantum devices are small and noisy, which makes it difficult to process large data sets relevant for practical problems. Coreset selection aims to circumvent this problem by reducing the size of input data without compromising the accuracy. Recent work has shown that coreset selection can help to implement quantum K-Means clustering problem. However, the impact of coreset selection on the performance of quantum K-Means clustering has not been explored. In this work, we compare the relative performance of two coreset techniques (BFL16 and ONESHOT), and the size of coreset construction in each case, with respect to a variety of data sets and layout the advantages and limitations of coreset selection in implementing quantum algorithms. We also investigated the effect of depolarisation quantum noise and bit-flip error, and implemented the Quantum AutoEncoder technique for surpassing the noise effect. Our work provides useful insights for future implementation of data science algorithms on near-term quantum devices where problem size has been reduced by coreset selection.

preprint2022arXiv

Surgery transformations and eigenvalue estimates for quantum graphs with $δ'$ vertex interactions

We extend the surgical tool box for quantum graphs to anti-standard and $δ'$ vertex conditions. Monotonicity properties of eigenvalues of graph Laplacian with $δ'$ interactions at vertices depend on the sign of vertex parameter. Using several interlacing inequalities between eigenvalues of graph Laplacian with different vertex conditions and surgery principles we obtain new upper and lower bounds on the eigenvalues of $δ$ and $δ'$ Laplacians.

preprint2022arXiv

VPN: Verification of Poisoning in Neural Networks

Neural networks are successfully used in a variety of applications, many of them having safety and security concerns. As a result researchers have proposed formal verification techniques for verifying neural network properties. While previous efforts have mainly focused on checking local robustness in neural networks, we instead study another neural network security issue, namely data poisoning. In this case an attacker inserts a trigger into a subset of the training data, in such a way that at test time, this trigger in an input causes the trained model to misclassify to some target class. We show how to formulate the check for data poisoning as a property that can be checked with off-the-shelf verification tools, such as Marabou and nneum, where counterexamples of failed checks constitute the triggers. We further show that the discovered triggers are `transferable' from a small model to a larger, better-trained model, allowing us to analyze state-of-the art performant models trained for image classification tasks.

preprint2021arXiv

Compliance Requirements in Large-Scale Software Development: An Industrial Case Study

Regulatory compliance is a well-studied area, including research on how to model, check, analyse, enact, and verify compliance of software. However, while the theoretical body of knowledge is vast, empirical evidence on challenges with regulatory compliance, as faced by industrial practitioners particularly in the Software Engineering domain, is still lacking. In this paper, we report on an industrial case study which aims at providing insights into common practices and challenges with checking and analysing regulatory compliance, and we discuss our insights in direct relation to the state of reported evidence. Our study is performed at Ericsson AB, a large telecommunications company, which must comply to both locally and internationally governing regulatory entities and standards such as GDPR. The main contributions of this work are empirical evidence on challenges experienced by Ericsson that complement the existing body of knowledge on regulatory compliance.

preprint2021arXiv

NEUROSPF: A tool for the Symbolic Analysis of Neural Networks

This paper presents NEUROSPF, a tool for the symbolic analysis of neural networks. Given a trained neural network model, the tool extracts the architecture and model parameters and translates them into a Java representation that is amenable for analysis using the Symbolic PathFinder symbolic execution tool. Notably, NEUROSPF encodes specialized peer classes for parsing the model's parameters, thereby enabling efficient analysis. With NEUROSPF the user has the flexibility to specify either the inputs or the network internal parameters as symbolic, promoting the application of program analysis and testing approaches from software engineering to the field of machine learning. For instance, NEUROSPF can be used for coverage-based testing and test generation, finding adversarial examples and also constraint-based repair of neural networks, thus improving the reliability of neural networks and of the applications that use them. Video URL: https://youtu.be/seal8fG78LI

preprint2021arXiv

Recent Trends in Food Intake Monitoring using Wearable Sensors

Obesity and being over-weight add to the risk of some major life threatening diseases. According to W.H.O., a considerable population suffers from these disease whereas poor nutrition plays an important role in this context. Traditional food activity monitoring systems like Food Diaries allow manual record keeping of eating activities over time, and conduct nutrition analysis. However, these systems are prone to the problems of manual record keeping and biased-reporting. Therefore, recently, the research community has focused on designing automatic food monitoring systems since the last decade which consist of one or multiple wearable sensors. These systems aim at providing different macro and micro activity detections like chewing, swallowing, eating episodes, and food types as well as estimations like food mass and eating duration. Researchers have emphasized on high detection accuracy, low estimation errors, un-intrusive nature, low cost and real life implementation while designing these systems, however a comprehensive automatic food monitoring system has yet not been developed. Moreover, according to the best of our knowledge, there is no comprehensive survey in this field that delineates the automatic food monitoring paradigm, covers a handful number of research studies, analyses these studies against food intake monitoring tasks using various parameters, enlists the limitations and sets up future directions. In this research work, we delineate the automatic food intake monitoring paradigm and present a survey of research studies. With special focus on studies with wearable sensors, we analyze these studies against food activity monitoring tasks. We provide brief comparison of these studies along with shortcomings based upon experimentation results conducted under these studies. We setup future directions at the end to facilitate the researchers working in this domain.

preprint2021arXiv

The Diabetic Buddy: A Diet Regulator andTracking System for Diabetics

The prevalence of Diabetes mellitus (DM) in the Middle East is exceptionally high as compared to the rest of the world. In fact, the prevalence of diabetes in the Middle East is 17-20%, which is well above the global average of 8-9%. Research has shown that food intake has strong connections with the blood glucose levels of a patient. In this regard, there is a need to build automatic tools to monitor the blood glucose levels of diabetics and their daily food intake. This paper presents an automatic way of tracking continuous glucose and food intake of diabetics using off-the-shelf sensors and machine learning, respectively. Our system not only helps diabetics to track their daily food intake but also assists doctors to analyze the impact of the food in-take on blood glucose in real-time. For food recognition, we collected a large-scale Middle-Eastern food dataset and proposed a fusion-based framework incorporating several existing pre-trained deep models for Middle-Eastern food recognition.

preprint2020arXiv

A Study of the Learnability of Relational Properties: Model Counting Meets Machine Learning (MCML)

This paper introduces the MCML approach for empirically studying the learnability of relational properties that can be expressed in the well-known software design language Alloy. A key novelty of MCML is quantification of the performance of and semantic differences among trained machine learning (ML) models, specifically decision trees, with respect to entire (bounded) input spaces, and not just for given training and test datasets (as is the common practice). MCML reduces the quantification problems to the classic complexity theory problem of model counting, and employs state-of-the-art model counters. The results show that relatively simple ML models can achieve surprisingly high performance (accuracy and F1-score) when evaluated in the common setting of using training and test datasets - even when the training dataset is much smaller than the test dataset - indicating the seeming simplicity of learning relational properties. However, MCML metrics based on model counting show that the performance can degrade substantially when tested against the entire (bounded) input space, indicating the high complexity of precisely learning these properties, and the usefulness of model counting in quantifying the true performance.

preprint2020arXiv

Cross Lingual Speech Emotion Recognition: Urdu vs. Western Languages

Cross-lingual speech emotion recognition is an important task for practical applications. The performance of automatic speech emotion recognition systems degrades in cross-corpus scenarios, particularly in scenarios involving multiple languages or a previously unseen language such as Urdu for which limited or no data is available. In this study, we investigate the problem of cross-lingual emotion recognition for Urdu language and contribute URDU---the first ever spontaneous Urdu-language speech emotion database. Evaluations are performed using three different Western languages against Urdu and experimental results on different possible scenarios suggest various interesting aspects for designing more adaptive emotion recognition system for such limited languages. In results, selecting training instances of multiple languages can deliver comparable results to baseline and augmentation a fraction of testing language data while training can help to boost accuracy for speech emotion recognition. URDU data is publicly available for further research.

preprint2020arXiv

Motion Corrected Multishot MRI Reconstruction Using Generative Networks with Sensitivity Encoding

Multishot Magnetic Resonance Imaging (MRI) is a promising imaging modality that can produce a high-resolution image with relatively less data acquisition time. The downside of multishot MRI is that it is very sensitive to subject motion and even small amounts of motion during the scan can produce artifacts in the final MR image that may cause misdiagnosis. Numerous efforts have been made to address this issue; however, all of these proposals are limited in terms of how much motion they can correct and the required computational time. In this paper, we propose a novel generative networks based conjugate gradient SENSE (CG-SENSE) reconstruction framework for motion correction in multishot MRI. The proposed framework first employs CG-SENSE reconstruction to produce the motion-corrupted image and then a generative adversarial network (GAN) is used to correct the motion artifacts. The proposed method has been rigorously evaluated on synthetically corrupted data on varying degrees of motion, numbers of shots, and encoding trajectories. Our analyses (both quantitative as well as qualitative/visual analysis) establishes that the proposed method significantly robust and outperforms state-of-the-art motion correction techniques and also reduces severalfold of computational times.

preprint2020arXiv

Phonocardiographic Sensing using Deep Learning for Abnormal Heartbeat Detection

Cardiac auscultation involves expert interpretation of abnormalities in heart sounds using stethoscope. Deep learning based cardiac auscultation is of significant interest to the healthcare community as it can help reducing the burden of manual auscultation with automated detection of abnormal heartbeats. However, the problem of automatic cardiac auscultation is complicated due to the requirement of reliability and high accuracy, and due to the presence of background noise in the heartbeat sound. In this work, we propose a Recurrent Neural Networks (RNNs) based automated cardiac auscultation solution. Our choice of RNNs is motivated by the great success of deep learning in medical applications and by the observation that RNNs represent the deep learning configuration most suitable for dealing with sequential or temporal data even in the presence of noise. We explore the use of various RNN models, and demonstrate that these models deliver the abnormal heartbeat classification score with significant improvement. Our proposed approach using RNNs can be potentially be used for real-time abnormal heartbeat detection in the Internet of Medical Things for remote monitoring applications.

preprint2020arXiv

Polarization Independent Ground State Optical Transitions in Closely Stacked InAs/GaAs Columnar Quantum Dots

This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical transition strengths predict that a nearly zero degree of polarisation can be achieved at 1550 nm emission/absorption wavelength by engineering the number of QD layers in a columnar QD. These results are promising for the design of optical devices requiring polarisation insensitive optical response such as semiconductor optical amplifiers.

preprint2020arXiv

Security and Privacy in IoT Using Machine Learning and Blockchain: Threats & Countermeasures

Security and privacy of the users have become significant concerns due to the involvement of the Internet of things (IoT) devices in numerous applications. Cyber threats are growing at an explosive pace making the existing security and privacy measures inadequate. Hence, everyone on the Internet is a product for hackers. Consequently, Machine Learning (ML) algorithms are used to produce accurate outputs from large complex databases, where the generated outputs can be used to predict and detect vulnerabilities in IoT-based systems. Furthermore, Blockchain (BC) techniques are becoming popular in modern IoT applications to solve security and privacy issues. Several studies have been conducted on either ML algorithms or BC techniques. However, these studies target either security or privacy issues using ML algorithms or BC techniques, thus posing a need for a combined survey on efforts made in recent years addressing both security and privacy issues using ML algorithms and BC techniques. In this paper, we provide a summary of research efforts made in the past few years, starting from 2008 to 2019, addressing security and privacy issues using ML algorithms and BCtechniques in the IoT domain. First, we discuss and categorize various security and privacy threats reported in the past twelve years in the IoT domain. Then, we classify the literature on security and privacy efforts based on ML algorithms and BC techniques in the IoT domain. Finally, we identify and illuminate several challenges and future research directions in using ML algorithms and BC techniques to address security and privacy issues in the IoT domain.

preprint2020arXiv

Volumetric Lung Nodule Segmentation using Adaptive ROI with Multi-View Residual Learning

Accurate quantification of pulmonary nodules can greatly assist the early diagnosis of lung cancer, which can enhance patient survival possibilities. A number of nodule segmentation techniques have been proposed, however, all of the existing techniques rely on radiologist 3-D volume of interest (VOI) input or use the constant region of interest (ROI) and only investigate the presence of nodule voxels within the given VOI. Such approaches restrain the solutions to investigate the nodule presence outside the given VOI and also include the redundant structures into VOI, which may lead to inaccurate nodule segmentation. In this work, a novel semi-automated approach for 3-D segmentation of nodule in volumetric computerized tomography (CT) lung scans has been proposed. The proposed technique can be segregated into two stages, at the first stage, it takes a 2-D ROI containing the nodule as input and it performs patch-wise investigation along the axial axis with a novel adaptive ROI strategy. The adaptive ROI algorithm enables the solution to dynamically select the ROI for the surrounding slices to investigate the presence of nodule using deep residual U-Net architecture. The first stage provides the initial estimation of nodule which is further utilized to extract the VOI. At the second stage, the extracted VOI is further investigated along the coronal and sagittal axis with two different networks and finally, all the estimated masks are fed into the consensus module to produce the final volumetric segmentation of nodule. The proposed approach has been rigorously evaluated on the LIDC dataset, which is the largest publicly available dataset. The result suggests that the approach is significantly robust and accurate as compared to the previous state of the art techniques.

preprint2019arXiv

Atomic-level Characterisation of Quantum Computer Arrays by Machine Learning

Atomic level qubits in silicon are attractive candidates for large-scale quantum computing, however, their quantum properties and controllability are sensitive to details such as the number of donor atoms comprising a qubit and their precise location. This work combines machine learning techniques with million-atom simulations of scanning-tunnelling-microscope (STM) images of dopants to formulate a theoretical framework capable of determining the number of dopants at a particular qubit location and their positions with exact lattice-site precision. A convolutional neural network was trained on 100,000 simulated STM images, acquiring a characterisation fidelity (number and absolute donor positions) of above 98\% over a set of 17,600 test images including planar and blurring noise. The method established here will enable a high-precision post-fabrication characterisation of dopant qubits in silicon, with high-throughput potentially alleviating the requirements on the level of resource required for quantum-based characterisation, which may be otherwise a challenge in the context of large qubit arrays for universal quantum computing.

preprint2016arXiv

Dark energy via multi-Higgs doublet models: accelerated expansion of the Universe in inert doublet model scenario

Scalar fields are among the possible candidates for dark energy. This paper is devoted to the scalar fields from the inert doublet model, where instead of one as in the standard model, two SU(2) Higgs doublets are used. The component fields of one SU(2) doublet ($ϕ_1$) act in an identical way to the standard model Higgs while the component fields of the second SU(2) doublet ($ϕ_2$) are taken to be the dark energy candidate (which is done by assuming that the phase transition in the field has not yet occurred). It is found that one can arrange for late time acceleration (dark energy) by using an SU(2) Higgs doublet in the inert Higgs doublet model, whose vacuum expectation value is zero, in the quintessential regime.

preprint2016arXiv

On the dark matter as a geometric effect in $f(\mathcal{R})$ gravity

A mysterious type of matter is supposed to exist, because the observed rotational velocity curves of particle moving around the galactic center and the expected rotational velocity curves do not match. There are also a number of proposals in the modified gravity for this discrepancy. In this contrast, in $2008$, B$\ddot{\text{o}}$hmer et al. presented an interesting idea in (Astropart Phys 29(6):386-392, 2008) where they showed that a $f(\mathcal{R})$ gravity model could actually explain dark matter to be a geometric effect only. They solved the gravitational field equations in vacuum using generic $f(\mathcal{R})$ gravity model for constant velocity regions and found that the resulting modifications in the Einstein-Hilbert Lagrangian is of the form $\mathcal{R}^{1+m}$, where $m=V_{tg}^2/c^2$; $V_{tg}$ being the tangential velocity of the test particle moving around galactic dark matter region and, $c$, the speed of light. From observations it is known that $m\approx\mathcal{O}(10^{-6})$. In this article, we perform two things (1) We show that the form of $f(\mathcal{R})$ they claimed is not correct. In doing the calculations, we found that when the radial component of the metric for constant velocity regions is a constant then the exact solutions for $f(\mathcal{R})$ obtained is of the form of $\mathcal{R}^{1-α}$ which corresponds to a negative correction rather than positive, $α$ is a function of $m$. (2) We also show that we can not have an analytic solution of $f(\mathcal{R})$ for all values of tangential velocity including the observed value of tangential velocity $200-300$Km/s if the radial coefficient of the metric which describes the dark matter regions is \emph{not a constant}. Thus, we have to rely on the numerical solutions to get an approximate model for dark matter in $f(\mathcal{R})$ gravity.

preprint2016arXiv

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -- the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of sub-surface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications.

preprint2015arXiv

Energy-Efficient Infrastructure Sensor Network for Ad Hoc Cognitive Radio Network

We propose an energy-efficient network architecture that consists of ad hoc (mobile) cognitive radios (CRs) and infrastructure wireless sensor nodes. The sensor nodes within communications range of each CR are grouped into a cluster and the clusters of CRs are regularly updated according to the random mobility of the CRs. We reduce the energy consumption and the end-to-end delay of the sensor network by dividing each cluster into disjoint subsets with overlapped sensing coverage of primary user (PU) activity. Respective subset of a CR provides target detection and false alarm probabilities. Substantial energy efficiency is achieved by activating only one subset of the cluster, while putting the rest of the subsets in the cluster into sleep mode.

preprint2015arXiv

Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon

Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fields in realistically sized devices. We establish and apply a theoretical framework, based on atomistic tight-binding theory, to quantitatively determine the strain and electric field dependent hyperfine couplings of donors. Our method is scalable to millions of atoms, and yet captures the strain effects with an accuracy level of DFT method. Excellent agreement with the available experimental data sets allow reliable investigation of the design space of multi-qubit architectures, based on both strain-only as well as hybrid (strain+field) control of qubits. The benefits of strain are uncovered by demonstrating that a hybrid control of qubits based on (001) compressive strain and in-plane (100 or 010) fields results in higher gate fidelities and/or faster gate operations, for all of the four donor species considered (P, As, Sb, and Bi). The comparison between different donor species in strained environments further highlights the trends of hyperfine shifts, providing predictions where no experimental data exists. Whilst faster gate operations are realisable with in-plane fields for P, As, and Sb donors, only for the Bi donor, our calculations predict faster gate response in the presence of both in-plane and out-of-plane fields, truly benefiting from the proposed planar field control mechanism of the hyperfine interactions.

preprint2015arXiv

Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules

Strongly-coupled quantum dot molecules (QDMs) are widely deployed in the design of a variety of optoelectronic, photovoltaic, and quantum information devices. An efficient and optimized performance of these devices demands engineering of the electronic and optical properties of the underlying QDMs. The application of electric fields offers a knob to realise such control over the QDM characteristics for a desired device operation. We perform multi-million-atom atomistic tight-binding calculations to study the influence of electric fields on the electron and hole wave function confinements and symmetries, the ground-state transition energies, the band-gap wavelengths, and the optical transition modes. The electrical fields both parallel ($\vec{E_p}$) and anti-parallel ($\vec{E_a}$) to the growth direction are investigated to provide a comprehensive guide on the understanding of the electric field effects. The strain-induced asymmetry of the hybridized electron states is found to be weak and can be balanced by applying a small $\vec{E_a}$ electric field, of the order of 1 KV/cm. The strong interdot couplings completely break down at large electric fields, leading to single QD states confined at the opposite edges of the QDM. This mimics a transformation from a type-I band structure to a type-II band structure for the QDMs, which is a critical requirement for the design of intermediate-band solar cells (IBSC). The analysis of the field-dependent ground-state transition energies reveal that the QDM can be operated both as a high dipole moment device by applying large electric fields and as a high polarizibility device under the application of small electric field magnitudes. [abstract is truncated to fit the character count of arXiv]

preprint2014arXiv

Atomistic tight-binding study of electronic structure and interband optical transitions in GaBi$_{x}$As$_{1-x}$/GaAs quantum wells

Large-supercell tight-binding calculations are presented for GaBi$_{x}$As$_{1-x}$/GaAs single quantum wells (QWs) with Bi fractions $x$ of 3.125% and 12.5%. Our results highlight significant distortion of the valence band states due to the alloy disorder. A large full-width-half-maximum (FWHM) is estimated in the ground state interband transition energy ($\approx$ 33 meV) at 3.125% Bi, consistent with recent photovoltage measurements for similar Bi compositions. Additionally, the alloy disorder effects are predicted to become more pronounced as the QW width is increased. However, they are less strong at the higher Bi composition (12.5%) required for the design of temperature-stable lasers, with a calculated FWHM of $\approx$ 23.5 meV at $x$=12.5%.

preprint2014arXiv

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric screening of the donor potential tunes the value of the quadratic Stark shift parameter ($η_2$) from -1.3 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the static dielectric screening to -1.72 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the non-static dielectric screening. The effect of lattice strain, implemented by a 3.2% change in the As-Si nearest-neighbour bond length, further shifts the value of $η_2$ to -1.87 $\times$ 10$^{-3} μ$m$^2$/V$^2$, resulting in an excellent agreement of theory with the experimentally measured value of -1.9 $\pm$ 0.2 $\times$ 10$^{-3} μ$m$^2$/V$^2$. Based on our direct comparison of the calculations with the experiment, we conclude that the previously ignored non-static dielectric screening of the donor potential and the lattice strain significantly influence the donor wave function charge density and thereby leads to a better agreement with the available experimental data sets.

preprint2014arXiv

Electronic and Optical Properties of [110]-Tilted InAs/GaAs Quantum Dot Stacks

Multi-million atom simulations are performed to study stacking-angle ($θ$) dependent strain profiles, electronic structure, and polarization-resolved optical modes from [110]-tilted quantum dot stacks (QDSs). Our calculations reveal highly asymmetrical biaxial strain distributions for the tilted QDSs that strongly influence the confinements of hole wave functions and thereby control the polarization response. The calculated values of degree of polarizations, in good agreement with the available experimental data, predict a unique property of the tilted QDSs that the isotropic polarization response can be realized from both [110] and [-110] cleaved-edges $-$ a feature inaccessible from the conventional [001]-QDSs. Detailed investigations of polar plots further establish that tilting the QDSs provides an additional knob to fine tune their polarization properties.

preprint2013arXiv

12-band $\textbf{k}\cdot\textbf{p}$ model for dilute bismide alloys of (In)GaAs derived from supercell calculations

Incorporation of bismuth (Bi) in dilute quantities in (In)GaAs has been shown to lead to unique electronic properties that can in principle be exploited for the design of high efficiency telecomm lasers. This motivates the development of simple models of the electronic structure of these dilute bismide alloys, which can be used to evaluate their potential as a candidate material system for optical applications. Here, we begin by using detailed calculations based on an $sp^{3}s^{*}$ tight-binding model of (In)GaBi$_{x}$As$_{1-x}$ to verify the presence of a valence band-anticrossing interaction in these alloys. Based on the tight-binding model the derivation of a 12-band $\textbf{k}\cdot\textbf{p}$ Hamiltonian for dilute bismide alloys is outlined. We show that the band structure obtained from the 12-band model is in excellent agreement with full tight-binding supercell calculations. Finally, we apply the 12-band model to In$_{0.53}$Ga$_{0.47}$Bi$_{x}$As$_{1-x}$ and compare the calculated variation of the band gap and spin-orbit-splitting to a variety of spectroscopic measurements performed on a series of MBE-grown In$_{0.53}$Ga$_{0.47}$Bi$_{x}$As$_{1-x}$/InP layers.

preprint2013arXiv

Impact of alloy disorder on the band structure of compressively strained GaBiAs

The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy (E$_g$) accompanied with a large increase in the spin-orbit splitting energy ($\bigtriangleup_{SO}$), leading to the condition that $\bigtriangleup_{SO} > E_g$ which is anticipated to reduce so-called CHSH Auger recombination losses whereby the energy and momentum of a recombining electron-hole pair is given to a second hole which is excited into the spin-orbit band. We theoretically investigate the electronic structure of experimentally grown GaBi$_x$As$_{1-x}$ samples on (100) GaAs substrates by directly comparing our data with room temperature photo-modulated reflectance (PR) measurements. Our atomistic theoretical calculations, in agreement with the PR measurements, confirm that E$_g$ is equal to $\bigtriangleup_{SO}$ for $\textit{x} \approx$ 9$%$. We then theoretically probe the inhomogeneous broadening of the interband transition energies as a function of the alloy disorder. The broadening associated with spin-split-off transitions arises from conventional alloy effects, while the behaviour of the heavy-hole transitions can be well described using a valence band-anticrossing model. We show that for the samples containing 8.5% and 10.4% Bi the difficulty in identifying a clear light-hole-related transition energy from the measured PR data is due to the significant broadening of the host matrix light-hole states as a result of the presence of a large number of Bi resonant states in the same energy range and disorder in the alloy. We further provide quantitative estimates of the impact of supercell size and the assumed random distribution of Bi atoms on the interband transition energies in GaBi$_{x}$As$_{1-x}$. Our calculations support a type-I band alignment at the GaBi$_x$As$_{1-x}$/GaAs interface, consistent with recent experimental findings.

preprint2013arXiv

Tuning of polarisation sensitivity in closely-stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of the strain-induced surface kinetics during the growth of vertically-stacked multiple layers of QDs allow to engineer their self organization process. Most noticeably, the present study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping with GaAs spacer. This leads to a drastic increase of TM/TE polarization ratio of emitted light, not accessible from the conventional growth parameters. Our detailed experimental measurements supported by comprehensive multi-million atom simulations of strain, electronic, and optical properties, provide in-depth analysis of the grown QD samples leading us to depict a clear picture on atomic scale phenomena affecting the proposed growth dynamics and consequent QD polarization response.

preprint2013arXiv

Understanding Polarization Properties of InAs Quantum Dots by Atomistic Modeling of Growth Dynamics

A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as In-Ga intermixing and In segregation during the growth and overgrowth with GaAs. The parameters of the proposed model are derived by reproducing the experimentally measured polarization data. Further understanding is developed by analyzing the strain fields which suggests that the two-composition model indeed results in lower strain energies than the commonly applied uniform composition model.

preprint2012arXiv

Atomistic theoretical study of electronic and polarization properties of elliptical, single and vertically stacked InAs quantum dots

The demonstration of isotropic polarization response from semiconductor quantum dots (QDs) is a crucial step towards the design of several optoelectronic technologies. Among many parameters that impact the degree of polarization (DOP) of a QD system, the shape asymmetry is a critical factor. We perform multi-million-atom simulations to study the impact of the elliptical shapes on the electronic and polarization properties of single and vertically stacked InAs QDs. The comparison between a low aspect ratio (AR) and a high AR QD reveals that the electronic and the polarization properties strongly depend on the AR of the QD; the elongation of a tall QD allows tuning of the DOP over a much wider range. We then extend our analysis to an experimentally reported vertical stack of nine QDs (9-VSQDs) that has shown significant potential to achieve isotropic polarization properties. We analyse the contribution from the shape asymmetry in the large, experimentally measured, in-plane polarization anisotropy. Our analysis shows that the orientation of the base elongation controls the sign of the DOP; however the magnitude of the base elongation has only a very little impact on the magnitude of the DOP. We further predict that the elliptical shape of the 9-VSQDs can only tune either DOP[110] or DOP[-110] for an isotropic response. Our model results, in agreement with the TEM findings, suggest that the experimentally grown 9-VSQDs has either a circular-base or a slightly [-110] elongated base. Overall the detailed investigation of the DOP as a function of the QD shape asymmetry provides a theoretical guidance for the continuing experimental efforts to achieve tailored polarization properties from the QD nano-structures for the design of optical devices.

preprint2012arXiv

Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties

III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.

preprint2012arXiv

Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models

The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBiAs alloys results in a large reduction of the band gap energy Eg accompanied by a significant increase of the spin-orbit-splitting energy (delta_SO), leading to an Eg < delta_SO regime for ~10% Bi composition which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBiNAs offers further flexibility for band gap tuning, because both nitrogen and bismuth can independently induce band gap reduction. This work reports sp3s* tight binding and 14-band k.p models for the study of the electronic structure of GaBiAs and GaBiNAs alloys. Our results are in good agreement with the available experimental data.

preprint2011arXiv

Comparative Study on DFD to UML Diagrams Transformations

Most of legacy systems use nowadays were modeled and documented using structured approach. Expansion of these systems in terms of functionality and maintainability requires shift towards object-oriented documentation and design, which has been widely accepted by the industry. In this paper, we present a survey of the existing Data Flow Diagram (DFD) to Unified Modeling language (UML) transformation techniques. We analyze transformation techniques using a set of parameters, identified in the survey. Based on identified parameters, we present an analysis matrix, which describes the strengths and weaknesses of transformation techniques. It is observed that most of the transformation approaches are rule based, which are incomplete and defined at abstract level that does not cover in depth transformation and automation issues. Transformation approaches are data centric, which focuses on data-store for class diagram generation. Very few of the transformation techniques have been applied on case study as a proof of concept, which are not comprehensive and majority of them are partially automated.

preprint2011arXiv

Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots

Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum dot layers by linearly polarized PL measurements and by carrying out a systematic set of multi-million atom simulations. The atomistic modeling and simulations allow us to include correct symmetry properties in the calculations of the optical spectra: a factor critical to explain the experimental evidence. The values of the degree of polarization (DOP) calculated from our model follows the trends of the experimental data. We also present detailed physical insight by examining strain profiles, band edges diagrams and wave function plots. Multi-directional PL measurements and calculations of the DOP reveal a unique property of InAs quantum dot stacks that the TE response is anisotropic in the plane of the stacks. Therefore a single value of the DOP is not sufficient to fully characterize the polarization response. We explain this anisotropy of the TE-modes by orientation of hole wave functions along the [-110] direction. Our results provide a new insight that isotropic polarization response measured in the experimental PL spectra is due to two factors: (i) TM[001]-mode contributions increase due to enhanced intermixing of HH and LH bands, and (ii) TE[110]-mode contributions reduce significantly due to hole wave function alignment along the [-110] direction. We also present optical spectra for various geometry configurations of quantum dot stacks to provide a guide to experimentalists for the design of multi-layer QD stacks for optical devices. Our results predict that the QD stacks with identical layers will exhibit lower values of the DOP than the stacks with non-identical layers.

preprint2011arXiv

Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations

Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions.

preprint2011arXiv

Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

We develop an atomistic, nearest-neighbor sp3s* tight-binding Hamiltonian to investigate the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model we calculate that the incorporation of dilute concentrations of Bi in GaP introduces Bi-related defect states in the band gap, which interact with the host matrix valence band edge via a Bi composition dependent band anti-crossing (BAC) interaction. By extending this analysis to GaBiAs we demonstrate that the observed strong variation of the band gap Eg and spin-orbit-splitting (SO) energy with Bi composition can be well explained in terms of a BAC interaction between the extended states of the GaAs valence band edge and highly localized Bi-related defect states lying in the valence band, with the change in Eg also having a significant contribution from a conventional alloy reduction in the conduction band edge energy. Our calculated values of Eg and SO are in good agreement with experiment throughout the investigated composition range x less than 13%. In particular, our calculations reproduce the experimentally observed crossover to an Eg < SO regime at approximately 10.5% Bi composition in bulk GaBiAs. Recent x-ray spectroscopy measurements have indicated the presence of Bi pairs and clusters even for Bi compositions as low as 2%. We include a systematic study of different Bi nearest-neighbor environments in the alloy to achieve a quantitative understanding of the effect of Bi pairing and clustering on the GaBiAs electronic structure.

preprint2010arXiv

A meshless numerical solution of the family of generalized fifth-order Korteweg-de Vries equations

In this paper we present a numerical solution of a family of generalized fifth-order Korteweg-de Vries equations using a meshless method of lines. This method uses radial basis functions for spatial derivatives and Runge-Kutta method as a time integrator. This method exhibits high accuracy as seen from the comparison with the exact solutions.

preprint2010arXiv

Constraint-based Query Distribution Framework for an Integrated Global Schema

Distributed heterogeneous data sources need to be queried uniformly using global schema. Query on global schema is reformulated so that it can be executed on local data sources. Constraints in global schema and mappings are used for source selection, query optimization,and querying partitioned and replicated data sources. The provided system is all XML-based which poses query in XML form, transforms, and integrates local results in an XML document. Contributions include the use of constraints in our existing global schema which help in source selection and query optimization, and a global query distribution framework for querying distributed heterogeneous data sources.

preprint2010arXiv

Experimental and Theoretical Study of Polarization-dependent Optical Transitions from InAs Quantum Dots at Telecommunication-Wavelengths (1.3-1.5μm)

The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emission at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by using low growth rates, the incorporation of strain-reducing capping layers or growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also allows greater freedom in the choice of growth conditions for the upper layers, so that both a significant extension in their emission wavelength and an improved polarization response can be achieved due to modification of the QD size, strain and composition. In this paper we investigate the polarization behavior of single and stacked QD layers using room temperature sub-lasing-threshold electroluminescence and photovoltage measurements as well as atomistic modeling with the NEMO 3-D simulator. A reduction is observed in the ratio of the transverse electric (TE) to transverse magnetic (TM) optical mode response for a GaAs-capped QD stack compared to a single QD layer, but when the second layer of the two-layer stack is InGaAs-capped an increase in the TE/TM ratio is observed, in contrast to recent reports for single QD layers.

preprint2010arXiv

Global Well-posedness and Asymptotic Behavior of a Class of Initial-Boundary-Value Problem of the Korteweg-de Vries Equation on a Finite Domain

In this paper, we study a class of initial boundary value problem (IBVP) of the Korteweg- de Vries equation posed on a finite interval with nonhomogeneous boundary conditions. The IBVP is known to be locally well-posed, but its global $L^2 $ a priori estimate is not available and therefore it is not clear whether its solutions exist globally or blow up in finite time. It is shown in this paper that the solutions exist globally as long as their initial value and the associated boundary data are small, and moreover, those solutions decay exponentially if their boundary data decay exponentially

preprint2008arXiv

Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data

Low-loss optical communication requires light sources at 1.5um wavelengths. Experiments showed without much theoretical guidance that InAs/GaAs quantum dots (QDs) may be tuned to such wavelengths by adjusting the In fraction in an InxGa1-xAs strain-reducing capping layer (SRCL). In this work systematic multimillion atom electronic structure calculations qualitatively and quantitatively explain for the first time available experimental data. The NEMO 3-D simulations treat strain in a 15 million atom system and electronic structure in a subset of ~9 million atoms using the experimentally given nominal geometries and without any further parameter adjustments the simulations match the nonlinear behavior of experimental data very closely. With the match to experimental data and the availability of internal model quantities significant insight can be gained through mapping to reduced order models and their relative importance. We can also demonstrate that starting from simple models has in the past led to the wrong conclusions. The critical new insight presented here is that the QD changes its shape. The quantitative simulation agreement with experiment without any material or geometry parameter adjustment in a general atomistic tool leads us to believe that the era of nano Technology Computer Aided Design (nano-TCAD) is approaching. NEMO 3-D will be released on nanoHUB.org where the community can duplicate and expand on the results presented here through interactive simulations.