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Mathias Steiner

Mathias Steiner appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.ins-detphysics.optics

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Published work

8 published item(s)

preprint2022arXiv

Artificial intelligence enables mobile soil analysis for sustainable agriculture

For optimizing production yield while limiting negative environmental impact, sustainable agriculture benefits greatly from real-time, on-the-spot analysis of soil at low cost. Colorimetric paper sensors are ideal candidates for cheap and rapid chemical spot testing. However, their field application requires previously unattained paper sensor reliability and automated readout and analysis by means of integrated mobile communication, artificial intelligence, and cloud computing technologies. Here, we report such a mobile chemical analysis system based on colorimetric paper sensors that operates under tropical field conditions. By mapping topsoil pH in a field with an area of 9 hectares, we have benchmarked the mobile system against precision agriculture standards following a protocol with reference analysis of compound soil samples. As compared with routine lab analysis, our mobile soil analysis system has correctly classified soil pH in 97% of cases while reducing the analysis turnaround time from days to minutes. Moreover, by performing on-the-spot analyses of individual compound sub-samples in the field, we have achieved a 9-fold increase of spatial resolution that reveals pH-variations not detectable in compound mapping mode. Our mobile system can be extended to perform multi-parameter chemical tests of soil nutrients for applications in environmental monitoring at marginal manufacturing cost.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Power dissipation and electrical breakdown in black phosphorus

We report operating temperatures and heating coefficients measured in a multi-layer black phosphorus device as a function of injected electrical power. By combining micro-Raman spectroscopy and electrical transport measurements, we have observed a linear temperature increase up to 600K at a power dissipation rate of 0.896Kμm^3/mW. By further increasing the bias voltage, we determined the threshold power and temperature for electrical breakdown and analyzed the fracture in the black phosphorus layer that caused the device failure by means of scanning electron microscopy and atomic force microscopy. The results will benefit the research and development of electronics and optoelectronics based on novel two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A black phosphorus photo-detector for multispectral, high-resolution imaging

Black phosphorus is a layered semiconductor that is intensely researched in view of applications in optoelectronics. In this Letter, we investigate a multi-layer black phosphorus photo-detector that is capable of acquiring high-contrast (V>0.9) images both in the visible (λ_{VIS}=532nm) as well as in the infrared (λ_{IR}=1550nm) spectral regime. In a first step, by using photocurrent microscopy, we map the active area of the device and we characterize responsivity and gain. In a second step, by deploying the black phosphorus device as a point-like detector in a confocal microsope setup, we acquire diffraction-limited optical images with sub-micron resolution. The results demonstrate the usefulness of black phosphorus as an optoelectronic material for hyperspectral imaging applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Origin of photoresponse in black phosphorus photo-transistors

We study the origin of photocurrent generated in doped multilayer BP photo-transistors, and find that it is dominated by thermally driven thermoelectric and bolometric processes. The experimentally observed photocurrent polarities are consistent with photo-thermal processes. The photo-thermoelectric current can be generated up to a $μ$m away from the contacts, indicating a long thermal decay length. With an applied source-drain bias, a photo-bolometric current is generated across the whole device, overwhelming the photo-thermoelectric contribution at a moderate bias. The photo-responsivity in the multilayer BP device is two orders of magnitude larger than that observed in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High-frequency performance of scaled carbon nanotube array field-effect transistors

We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Efficient narrow-band light emission from a single carbon nanotube p-n diode

Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been either required for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. In addition, electroluminescent linewidths have been broad enough to obscure the contributions of individual optical transitions. Here, we report electrically-induced light emission from individual carbon nanotube p-n diodes. A new level of control over electrical carrier injection is achieved, reducing power dissipation by a factor of up to 1000, and resulting in zero threshold current, negligible self-heating, and high carrier-to- photon conversion efficiencies. Moreover, the electroluminescent spectra are significantly narrower (ca. 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermal infrared emission reveals the Dirac point movement in biased graphene

Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly independent of wavelength. Here we investigate the thermal radiation from biased graphene transistors. We find that the emission spectrum of single-layer graphene follows that of a grey body with constant emissivity (1.6 \pm 0.8)%. Most importantly, we can extract the temperature distribution in the ambipolar graphene channel, as confirmed by Stokes/anti-Stokes measurements. The biased graphene exhibits a temperature maximum whose location can be controlled by the gate voltage. We show that this peak in temperature reveals the spatial location of the minimum in carrier density, i.e. the Dirac point.

0 citations0 reviewsNo code linkedOpen access