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Ralph Krupke

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Published work

11 published item(s)

preprint2022arXiv

Light Control over Chirality Selective Functionalization of Substrate Supported Carbon Nanotubes

Diazonium reactions with carbon nanotubes form optical $sp^3$ defects that can be used in optical and electrical circuits. We investigate a direct on-device reaction supported by confined laser irradiation and present a technique where an arbitrary carbon nanotube can be preferentially functionalized within a device by matching the light frequency with its transition energy. An exemplary reaction was carried out between (9,7) nanotube and 4-bromobenzenediazonium tetrafluoroborate. The substrate supported nanotubes of multiple semiconducting chiralities were locally exposed to laser light while monitoring the reaction kinetics in-situ via Raman spectroscopy. The chiral selectivity of the reaction was confirmed by resonant Raman spectroscopy, reporting a 10 meV $E_{22}$ transition energy red-shift only of the targeted species. We further demonstrated this method on a single tube (9,7) electroluminescent device and show a 25 meV red-shifted emission of the ground state $E_{11}$ compared to the emission from the pristine tubes.

preprint2020arXiv

Raman Fingerprints of Graphene Produced by Anodic Electrochemical Exfoliation

Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and different types of solvents in varying amounts. We demonstrate that no information on the thickness can be extracted from the shape of the 2D peak as this type of graphene is defective. Furthermore, the number of defects and the uniformity of the samples strongly depend on the experimental conditions, including post-processing. Under specific conditions, formation of short conductive trans-polyacetylene chains has been observed. Our Raman analysis provides guidance for the community on how to get information on defects coming from electrolyte, temperature and other experimental conditions, by making Raman spectroscopy a powerful metrology tool.

preprint2016arXiv

Chiral-Index Resolved Length Mapping of Carbon Nanotubes in Solution Using Electric-Field Induced Differential Absorption Spectroscopy

The length of single-walled carbon nanotubes (SWCNTs) is an important metric for the integration of SWCNTs into devices and for the performance of SWCNT-based electronic or optoelectronic applications. In this work we propose a rather simple method based on electric-field induced differential absorption spectroscopy (EFIDAS) to measure the chiral-index-resolved average length of SWCNTs in dispersions. The method takes advantage of the electric-field induced length-dependent dipole moment of nanotubes and has been verified and calibrated by atomic force microscopy. This method not only provides a low cost, in-situ approach for length measurements of SWCNTs in dispersion, but due to the sensitivity of the method to the SWCNT chiral index, the chiral index dependent average length of fractions obtained by chromatographic sorting can also be derived. Also, the determination of the chiral-index resolved length distribution seems to be possible using this method.

preprint2016arXiv

Light emission, light detection and strain sensing with nanocrystalline graphene

Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene into optical micro cavities also narrow band light emitters and detectors have been demonstrated. The devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end we explore in this work the feasibility of replacing graphene by nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman, X-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors.

preprint2013arXiv

Waveguide-integrated electroluminescent carbon nanotubes

Carbon based optoelectronic devices promise to revolutionize modern integrated circuits by combining outstanding electrical and optical properties into a unified technology. By coupling nanoelectronic devices to nanophotonic structures functional components such as nanoscale light emitting diodes, narrow-band thermal emitters, cavity controlled detectors and wideband electro optic modulators can be realized for chipscale information processing. These devices not only allow the light-matter interaction of low-dimensional systems to be studied, but also provide fundamental building blocks for high bandwidth on-chip communication. Here we demonstrate how light from an electrically-driven carbon-nanotube can be coupled directly into a photonic waveguide architecture. We realize wafer scale, broadband sources integrated with nanophotonic circuits allowing for propagation of light over centimeter distances. Moreover, we show that the spectral properties of the emitter can be controlled directly on chip with passive devices using Mach-Zehnder interferometers and grating structures. The direct, near-field coupling of electrically generated light into a waveguide, opposed to far-field fiber coupling of external light sources, opens new avenues for compact optoelectronic systems in a CMOS compatible framework.

preprint2012arXiv

Catalytic sub-surface etching of nanoscale channels in graphite

Catalytic hydrogenation of graphite has recently attracted renewed attention, as a route for nano-patterning of graphene and to produce graphene nano-ribbons. These reports show that metallic nanoparticles etch surface layers of graphite, or graphene anisotropically along the crystallographic zigzag <11-20> or armchair <1010> directions. On graphene the etching direction can be influenced by external magnetic fields or the substrate. Here we report the sub-surface etching of highly oriented pyrolytic graphite (HOPG) by Ni nanoparticles, to form a network of tunnels, as seen by SEM and STM. In this new nanoporous form of graphite, the top layers bend inward on top of the tunnels, while their local density of states remains fundamentally unchanged. Engineered nanoporous tunnel networks in graphite allow further chemical modification and may find applications in storage or sensing.

preprint2012arXiv

High-frequency performance of scaled carbon nanotube array field-effect transistors

We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.

preprint2012arXiv

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness.

preprint2012arXiv

Probing the Nature of Defects in Graphene by Raman Spectroscopy

Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (~ 13) for sp3-defects, it decreases for vacancy-like defects (~ 7) and reaches a minimum for boundaries in graphite (~3.5).

preprint2011arXiv

Controlled fabrication of single-walled carbon nanotube electrodes by electron-beam-induced oxidation

The fabrication of metallic single-walled carbon nanotube electrodes separated by gaps of typically 20nm width by electron-beam-induced oxidation is studied within an active device configuration. The tube conductance is measured continuously during the process. The experiment provides a statistical evaluation of gap sizes as well as the electron dose needed for gap formation. Also, the ability to precisely cut many carbon nanotubes in parallel is demonstrated.

preprint2011arXiv

Electroluminescence from chirality-sorted (9,7)-semiconducting carbon nanotube devices

We have measured the electroluminescence and photoluminescence of (9,7) semiconducting carbon nanotube devices and demonstrate that the electroluminescence wavelength is determined by the nanotube's chiral index (n,m). The devices were fabricated on Si3N4 membranes by dielectrophoretic assembly of tubes from monochiral dispersion. Electrically driven (9,7) devices exhibit a single Lorentzian shaped emission peak at 825 nm in the visible part of the spectrum. The emission could be assigned to the excitonic E22 interband transition by comparison of the electroluminescence spectra with corresponding photoluminescence excitation maps. We show a linear dependence of the EL peak width on the electrical current, and provide evidence for the inertness of Si3N4 surfaces with respect to the nanotubes optical properties.