BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Damon B. Farmer

Damon B. Farmer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

Catalog footprint

What is connected

13works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

13 published item(s)

preprint2015arXiv

Plasmon coupling in extended structures: Graphene superlattice nanoribbon arrays

Interactions between localized plasmons in proximal nanostructures is a well-studied phenomenon. Here we explore plasmon plasmon interactions in connected extended systems. Such systems can now be easily produced using graphene. Specifically we employ the finite element method to study such interactions in graphene nanoribbon arrays with a periodically modulated electrochemical potential or number of layers. We find a rich variation in the resulting plasmonic resonances depending on the dimensions and the electrochemical potentials (doping) of the nanoribbon segments and the involvement of transverse and longitudinal plasmon interactions. Unlike predictions based of the well-known "orbital hybridization model", the energies of the resulting hybrid plasmonic resonances of the extended system can lie between the energies of the plasmons of the individual components. The results demonstrate the wide range tunability of the graphene plasmons and can help to design structures with desired spectra, which can be used to enhance optical fields in the infrared region of the electromagnetic spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present, severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Due to the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High-frequency performance of scaled carbon nanotube array field-effect transistors

We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

100 GHz Transistors from Wafer Scale Epitaxial Graphene

High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Efficient narrow-band light emission from a single carbon nanotube p-n diode

Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been either required for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. In addition, electroluminescent linewidths have been broad enough to obscure the contributions of individual optical transitions. Here, we report electrically-induced light emission from individual carbon nanotube p-n diodes. A new level of control over electrical carrier injection is achieved, reducing power dissipation by a factor of up to 1000, and resulting in zero threshold current, negligible self-heating, and high carrier-to- photon conversion efficiencies. Moreover, the electroluminescent spectra are significantly narrower (ca. 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of a bandgap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a bandgap up to a few hundred meV can be created by the perpendicular E-field in bi-layer graphenes. Although previous carrier transport measurements in bi-layer graphene transistors did indicate a gate-induced insulating state at temperature below 1 Kelvin, the electrical (or transport) bandgap was estimated to be a few meV, and the room temperature on/off current ratio in bi-layer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time, we report an on/off current ratio of around 100 and 2000 at room temperature and 20 K, respectively in our dual-gate bi-layer graphene FETs. We also measured an electrical bandgap of >130 and 80 meV at average electric displacements of 2.2 and 1.3 V/nm, respectively. This demonstration reveals the great potential of bi-layer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices

We investigate polyethylene imine and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Operation of Graphene Transistors at GHz Frequencies

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate length, and fT as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step towards the realization of graphene-based electronics for high-frequency applications.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with metal source/drain, or devices commonly referred to as Schottky barrier FETs.

0 citations0 reviewsNo code linkedOpen access