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M. Di Ventra

M. Di Ventra appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallEmerging Technologiescond-mat.softcond-mat.mtrl-sciBiological Physicscond-mat.dis-nnNeural and Evolutionary ComputingNeurons and Cognitioncond-mat.str-elphysics.comp-phphysics.ins-detquant-phBiomoleculescond-mat.othercond-mat.stat-mechnlin.CD

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Published work

36 published item(s)

preprint2021arXiv

Comment on "$Φ$ memristor: Real memristor found" by F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua [J. Appl. Phys. 125, 054504 (2019)]

Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of Wang et al.'s model contradict the experimental curves presented in their paper. Additionally, the theoretical pinched hysteresis loops presented by Wang et al. can not be reproduced if their model is used, and there are serious flaws in their "negative memristor" emulator design. Finally, a simple gedanken experiment shows that the proposed $Φ$-memristor would fail the memristor test we recently suggested in J. Phys. D: Appl. Phys. 52, 01LT01 (2019). The device "discovered" by Wang et al. is just an inductor with memory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

An experimental proof that resistance-switching memories are not memristors

It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available electrochemical metallization cells. Our results unambiguously show that electrochemical metallization memory cells are not memristors. Since the particular resistance-switching memories employed in our study share similar features with many other memory cells, our findings refute the claim that all resistance-switching memories are memristors. They also cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. Our results then lead us to formulate two memristor impossibility conjectures regarding the impossibility of building a model of physical resistance-switching memories based on the memristor model.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature-driven transient charge and heat currents in nanoscale conductors

We analyze the short-time behavior of the heat and charge currents through nanoscale conductors exposed to a temperature gradient. To this end, we employ Luttinger's thermomechanical potential to simulate a sudden change of temperature at one end of the conductor. We find that the direction of the charge current through an impurity is initially opposite to the direction of the charge current in the steady-state limit. Furthermore, we investigate the transient propagation of energy and particle density driven by a temperature variation through a conducting nanowire. Interestingly, we find that the velocity of the wavefronts of, both, the particle and the energy wave have the same constant value, insensitive to changes in the average electronic density. In the steady-state regime, we find that, at low temperatures, the local temperature and potential, as measured by a floating probe lead, exhibit characteristic oscillations due to quantum interference, with a periodicity that corresponds to half the Fermi wavelength of the electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Memcomputing Pascaline

The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experimentally the memcomputing version of the mechanical Pascaline, capable of processing and storing the numerical results in the multiple levels of each memristive element. Our result is the first experimental demonstration of multidigit arithmetics with multi-level memory devices that further emphasizes the versatility and potential of memristive systems for future massively-parallel high-density computing architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Improving sequencing by tunneling with multiplexing and cross-correlations

Sequencing by tunneling is a next-generation approach to read single-base information using electronic tunneling transverse to the single-stranded DNA (ssDNA) backbone while the latter is translocated through a narrow channel. The original idea considered a single pair of electrodes to read out the current and distinguish the bases [1, 2]. Here, we propose an improvement to the original sequencing by tunneling method, in which $N$ pairs of electrodes are built in series along a synthetic nanochannel. While the ssDNA is forced through the channel using a longitudinal field it passes by each pair of electrodes for long enough time to gather a minimum of $m$ tunneling current measurements, where $m$ is determined by the level of sequencing error desired. Each current time series for each nucleobase is then cross-correlated together, from which the DNA bases can be distinguished. We show using random sampling of data from classical molecular dynamics, that indeed the sequencing error is significantly reduced as the number of pairs of electrodes, $N$, increases. Compared to the sequencing ability of a single pair of electrodes, cross-correlating $N$ pairs of electrodes is exponentially better due to the approximate log-normal nature of the tunneling current probability distributions. We have also used the Fenton-Wilkinson approximation to analytically describe the mean and variance of the cross-correlations that are used to distinguish the DNA bases. The method we suggest is particularly useful when the measurement bandwidth is limited, allowing a smaller electrode gap residence time while still promising to consistently identify the DNA bases correctly.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Reconfigurable Transmission Lines with Memcapacitive Materials

We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses. In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical applications. We present simulation results demonstrating all major steps of such a reconfigurable device operation including reset, programming and transmission of small amplitude signals. The proposed reconfigurable transmission lines employ only passive memory materials and can be realized using available memcapacitive devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Sequencing proteins with transverse ionic transport in nanochannels

{\it De novo} protein sequencing is essential for understanding cellular processes that govern the function of living organisms and all post-translational events and other sequence modifications that occur after a protein has been constructed from its corresponding DNA code. By obtaining the order of the amino acids that composes a given protein one can then determine both its secondary and tertiary structures through structure prediction, which is used to create models for protein aggregation diseases such as Alzheimer's Disease. Mass spectrometry is the current technique of choice for {\it de novo} sequencing. However, because some amino acids have the same mass the sequence cannot be completely determined in many cases. Here, we propose a new technique for {\it de novo} protein sequencing that involves translocating a polypeptide through a synthetic nanochannel and measuring the ionic current of each amino acid through an intersecting {\it perpendicular} nanochannel. To calculate the transverse ionic current blockaded by a given amino acid we use a Monte Carlo method along with Ramachandran plots to determine the available flow area, modified by the local density of ions obtained from molecular dynamics and the local flow velocity ratio derived from the Stokes equation. We find that the distribution of ionic currents for each of the 20 proteinogenic amino acids encoded by eukaryotic genes is statistically distinct, showing this technique's potential for {\it de novo} protein sequencing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Density-Functional Theory of Thermoelectric Phenomena

We introduce a non-equilibrium density-functional theory of local temperature and associated local energy density that is suited for the study of thermoelectric phenomena. The theory rests on a local temperature field coupled to the energy-density operator. We identify the excess-energy density, in addition to the particle density, as the basic variable, which is reproduced by an effective noninteracting Kohn-Sham system. A novel Kohn-Sham equation emerges featuring a time-dependent and spatially varying mass which represents local temperature variations. The adiabatic contribution to the Kohn-Sham potentials is related to the entropy viewed as a functional of the particle and energy density. Dissipation can be taken into account by employing linear response theory and the thermoelectric transport coefficients of the electron gas.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhanced noise at high bias in atomic-scale Au break junctions

Heating in nanoscale systems driven out of equilibrium is of fundamental importance, has ramifications for technological applications, and is a challenge to characterize experimentally. Prior experiments using nanoscale junctions have largely focused on heating of ionic degrees of freedom, while heating of the electrons has been mostly neglected. We report measurements in atomic-scale Au break junctions, in which the bias-driven component of the current noise is used as a probe of the electronic distribution. At low biases ($<$ 150~mV) the noise is consistent with expectations of shot noise at a fixed electronic temperature. At higher biases, a nonlinear dependence of the noise power is observed. We consider candidate mechanisms for this increase, including flicker noise (due to ionic motion), heating of the bulk electrodes, nonequilibrium electron-phonon effects, and local heating of the electronic distribution impinging on the ballistic junction. We find that flicker noise and bulk heating are quantitatively unlikely to explain the observations. We discuss the implications of these observations for other nanoscale systems, and experimental tests to distinguish vibrational and electron interaction mechanisms for the enhanced noise.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Luttinger-field approach to thermoelectric transport in nanoscale conductors

Thermoelectric transport in nanoscale conductors is analyzed in terms of the response of the system to a thermo-mechanical field, first introduced by Luttinger, which couples to the electronic energy density. While in this approach the temperature remains spatially uniform, we show that a spatially varying thermo-mechanical field effectively simulates a temperature gradient across the system and allows us to calculate the electric and thermal currents that flow due to the thermo-mechanical field. In particular, we show that, in the long-time limit, the currents thus calculated reduce to those that one obtains from the Landauer-Büttiker formula, suitably generalized to allow for different temperatures in the reservoirs, if the thermo-mechanical field is applied to prepare the system, and subsequently turned off at ${t=0}$. Alternatively, we can drive the system out of equilibrium by switching the thermo-mechanical field after the initial preparation. We compare these two scenarios, employing a model noninteracting Hamiltonian, in the linear regime, in which they coincide, and in the nonlinear regime in which they show marked differences. We also show how an operationally defined local effective temperature can be computed within this formalism.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Memcomputing and Swarm Intelligence

We explore the relation between memcomputing, namely computing with and in memory, and swarm intelligence algorithms. In particular, we show that one can design memristive networks to solve short-path optimization problems that can also be solved by ant-colony algorithms. By employing appropriate memristive elements one can demonstrate an almost one-to-one correspondence between memcomputing and ant colony optimization approaches. However, the memristive network has the capability of finding the solution in one deterministic step, compared to the stochastic multi-step ant colony optimization. This result paves the way for nanoscale hardware implementations of several swarm intelligence algorithms that are presently explored, from scheduling problems to robotics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Probing water structures in nanopores using tunneling currents

We study the effect of volumetric constraints on the structure and electronic transport properties of distilled water in a nanopore with embedded electrodes. Combining classical molecular dynamics simulations with quantum scattering theory, we show that the structural motifs water assumes inside the pore can be probed directly by tunneling. In particular, we show that the current does not follow a simple exponential curve at a critical pore diameter of about 8 Å, rather it is larger than the one expected from simple tunneling through a barrier. This is due to a structural transition from bulk-like to "nanodroplet" water domains. Our results can be tested with present experimental capabilities to develop our understanding of water as a complex medium at nanometer length scales.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Memcapacitive neural networks

We show that memcapacitive (memory capacitive) systems can be used as synapses in artificial neural networks. As an example of our approach, we discuss the architecture of an integrate-and-fire neural network based on memcapacitive synapses. Moreover, we demonstrate that the spike-timing-dependent plasticity can be simply realized with some of these devices. Memcapacitive synapses are a low-energy alternative to memristive synapses for neuromorphic computation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Memcomputing: a computing paradigm to store and process information on the same physical platform

In present day technology, storing and processing of information occur on physically distinct regions of space. Not only does this result in space limitations; it also translates into unwanted delays in retrieving and processing of relevant information. There is, however, a class of two-terminal passive circuit elements with memory, memristive, memcapacitive and meminductive systems -- collectively called memelements -- that perform both information processing and storing of the initial, intermediate and final computational data on the same physical platform. Importantly, the states of these memelements adjust to input signals and provide analog capabilities unavailable in standard circuit elements, resulting in adaptive circuitry, and providing analog massively-parallel computation. All these features are tantalizingly similar to those encountered in the biological realm, thus offering new opportunities for biologically-inspired computation. Of particular importance is the fact that these memelements emerge naturally in nanoscale systems, and are therefore a consequence and a natural by-product of the continued miniaturization of electronic devices. We will discuss the various possibilities offered by memcomputing, discuss the criteria that need to be satisfied to realize this paradigm, and provide an example showing the solution of the shortest-path problem and demonstrate the healing property of the solution path.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

On the physical properties of memristive, memcapacitive, and meminductive systems

We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and inductors with memory emerge naturally in the response of systems - especially those of nanoscale dimensions - subjected to external perturbations. As a consequence, since memristances, memcapacitances, and meminductances are simply response functions, they are not necessarily finite. This means that, unlike what has always been argued in some literature, diverging and non-crossing input-output curves of all these memory elements are physically possible in both quantum and classical regimes. For similar reasons, it is not surprising to find memcapacitances and meminductances that acquire negative values at certain times during dynamics, while the passivity criterion of memristive systems imposes always a non-negative value on the resistance at any given time. We finally show that ideal memristors, namely those whose state depends only on the charge that flows through them (or on the history of the voltage) are subject to very strict physical conditions and are unable to protect their memory state against the unavoidable fluctuations, and therefore are susceptible to a stochastic catastrophe. Similar considerations apply to ideal memcapacitors and meminductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Reliable SPICE Simulations of Memristors, Memcapacitors and Meminductors

Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of different memory circuit elements and provide a methodology for their accurate and reliable modeling in the SPICE environment. We also provide codes of these models written in the most popular SPICE versions (PSpice, LTspice, HSPICE) for the benefit of the reader. We expect this to be of great value to the growing community of scientists interested in the wide range of applications of memory circuit elements.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Robust weak-measurement protocol for Bohmian velocities

We present a protocol for measuring Bohmian - or the mathematically equivalent hydrodynamic - velocities based on an ensemble of two position measurements, defined from a Positive Operator Valued Measure, separated by a finite time interval. The protocol is very accurate and robust as long as the first measurement uncertainty divided by the finite time interval between measurements is much larger than the Bohmian velocity, and the system evolves under flat potential between measurements. The difference between the Bohmian velocity of the unperturbed state and the measured one is predicted to be much smaller than 1% in a large range of parameters. Counter-intuitively, the measured velocity is that at the final time and not a time-averaged value between measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Single-Base DNA Discrimination via Transverse Ionic Transport

We suggest to discriminate single DNA bases via transverse ionic transport, namely by detecting the ionic current that flows in a channel while a single-stranded DNA is driven through an intersecting nanochannel. Our all-atom molecular dynamics simulations indeed show that the ionic currents of the four bases are statistically distinct, thus offering another possible approach to sequence DNA.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

SPICE model of memristive devices with threshold

Although memristive devices with threshold voltages are the norm rather than the exception in experimentally realizable systems, their SPICE programming is not yet common. Here, we show how to implement such systems in the SPICE environment. Specifically, we present SPICE models of a popular voltage-controlled memristive system specified by five different parameters for PSPICE and NGSPICE circuit simulators. We expect this implementation to find widespread use in circuits design and testing.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin Chaos Manifestation in a Driven Quantum Billiard with Spin-Orbit Coupling

The coupling of orbital and spin degrees of freedom is the source of many interesting phenomena. Here, we study the electron dynamics in a quantum billiard --a mesoscopic rectangular quantum dot-- with spin-orbit coupling driven by a periodic electric field. We find that both the spatial and temporal profiles of the observables demonstrate the transition to chaotic dynamics with qualitative modifications of the power spectra and patterns of probability and spin density. The time dependence of the wavefunctions and spin density distributions indicates spin-charge separation {seen in the decay of the spin-charge density correlators}. This new spin chaos effect can be experimentally verified leading to a better understanding of the interplay between spin and spatial degrees of freedom, relevant to fundamental and applied quantum physics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Changing the state of a memristive system with white noise

Can we change the average state of a resistor by simply applying white noise? We show that the answer to this question is positive if the resistor has memory of its past dynamics (a memristive system). We also prove that, if the memory arises only from the charge flowing through the resistor -- an ideal memristor -- then the current flowing through such memristor can not charge a capacitor connected in series, and therefore cannot produce useful work. Moreover, the memristive system may skew the charge probability density on the capacitor, an effect which can be measured experimentally.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Complex dynamics and scale invariance of one-dimensional memristive networks

Memristive systems, namely resistive systems with memory, are attracting considerable attention due to their ubiquity in several phenomena and technological applications. Here, we show that even the simplest one-dimensional network formed by the most common memristive elements with voltage threshold bears non-trivial physical properties. In particular, by taking into account the single element variability we find i) dynamical acceleration and slowing down of the total resistance in adiabatic processes, ii) dependence of the final state on the history of the input signal with same initial conditions, iii) existence of switching avalanches in memristive ladders, and iv) independence of the dynamics voltage threshold with respect to the number of memristive elements in the network (scale invariance). An important criterion for this scale invariance is the presence of memristive systems with very small threshold voltages in the ensemble. These results elucidate the role of memory in complex networks and are relevant to technological applications of these systems.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of electric field induced changes to the frequency dependent conductivity in the accumulation or depletions layers of the active material via infrared (IR) spectroscopy. The spectra of the (Ga,Be)As-based device reveal electric field induced changes to the IR conductivity consistent with an enhancement or reduction of the Drude response in the accumulation and depletion polarities, respectively. The spectroscopic features of this device are all indicative of metallic conduction within the GaAs host valence band (VB). For the (Ga,Mn)As-based device, the spectra show enhancement of the far-IR itinerant carrier response and broad mid-IR resonance upon hole accumulation, with a decrease of these features in the depletion polarity. These later spectral features demonstrate that conduction in ferromagnetic (FM) Ga$_{1-x}$Mn$_x$As is distinct from genuine metallic behavior due to extended states in the host VB. Furthermore, these data support the notion that a Mn-induced impurity band plays a vital role in the electron dynamics of FM Ga$_{1-x}$Mn$_x$As. We add, a sum-rule analysis of the spectra of our devices suggests that the Mn or Be doping does not lead to a substantial renormalization of the GaAs host VB.

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preprint2012arXiv

Lagrange formalism of memory circuit elements: classical and quantum formulations

The general Lagrange-Euler formalism for the three memory circuit elements, namely, memristive, memcapacitive, and meminductive systems, is introduced. In addition, {\it mutual meminductance}, i.e. mutual inductance with a state depending on the past evolution of the system, is defined. The Lagrange-Euler formalism for a general circuit network, the related work-energy theorem, and the generalized Joule's first law are also obtained. Examples of this formalism applied to specific circuits are provided, and the corresponding Hamiltonian and its quantization for the case of non-dissipative elements are discussed. The notion of {\it memory quanta}, the quantum excitations of the memory degrees of freedom, is presented. Specific examples are used to show that the coupling between these quanta and the well-known charge quanta can lead to a splitting of degenerate levels and to other experimentally observable quantum effects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Molecular neuron based on the Franck-Condon blockade

Electronic realizations of neurons are of great interest as building blocks for neuromorphic computation. Electronic neurons should send signals into the input and output lines when subject to an input signal exceeding a given threshold, in such a way that they may affect all other parts of a neural network. Here, we propose a design for a neuron that is based on molecular-electronics components and thus promises a very high level of integration. We employ the Monte Carlo technique to simulate typical time evolutions of this system and thereby show that it indeed functions as a neuron.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological jamming of spontaneously knotted polyelectrolyte chains driven through a nanopore

The advent of solid state nanodevices allows for interrogating the physico-chemical properties of a polyelectrolyte chain by electrophoretically driving it through a nanopore. Salient dynamical aspects of the translocation process have been recently characterized by theoretical and computational studies of model polymer chains free from self-entanglement. However, sufficiently long equilibrated chains are necessarily knotted. The impact of such topological "defects" on the translocation process is largely unexplored, and is addressed in this study. By using Brownian dynamics simulations on a coarse-grained polyelectrolyte model we show that knots, despite being trapped at the pore entrance, do not "per se" cause the translocation process to jam. Rather, knots introduce an effective friction that increases with the applied force, and practically halts the translocation above a threshold force. The predicted dynamical crossover, which is experimentally verifiable, is of relevance in applicative contexts, such as DNA nanopore sequencing.

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preprint2011arXiv

Analog-to-Digital and Digital-to-Analog Conversion with Memristive Devices

We suggest a novel methodology to obtain a digital representation of analog signals and to perform its back-conversion using memristive devices. In the proposed converters, the same memristive systems are used for two purposes: as elements performing conversion and elements storing the code. This approach to conversion is particularly relevant for interfacing analog signals with memristive digital logic/computing circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Biologically-Inspired Electronics with Memory Circuit Elements

Several abilities of biological systems, such as adaptation to natural environment, or of animals to learn patterns when appropriately trained, are features that are extremely useful, if emulated by electronic circuits, in applications ranging from robotics to solution of complex optimization problems, traffic control, etc. In this chapter, we discuss several examples of biologically-inspired circuits that take advantage of memory circuit elements, namely, electronic elements whose resistive, capacitive or inductive characteristics depend on their past dynamics. We provide several illustrations of what can be accomplished with these elements including learning circuits and related adaptive filters, neuromorphic and cellular computing circuits, analog massively-parallel computation architectures, etc. We also give examples of experimental realizations of memory circuit elements and discuss opportunities and challenges in this new field.

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preprint2011arXiv

Chaotic memristor

We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincaré plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.

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preprint2011arXiv

Quantum Spinon Oscillations

The full quantum dynamics of a spinon under external magnetic fields is investigated by using the time-evolving block decimation (TEBD) method within the microcanonical picture of transport. We show that the center of the spinon oscillates back and forth in the absence of dissipation. The quantum many-body behavior can be understood in a single-particle picture of transport and Bloch oscillations, where quantum fluctuations induce finite life times. Transport, oscillations and lifetimes can be tuned to some degree separately by external fields. Other nontrivial dynamics such as resonance as well as chaos have also been discussed.

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preprint2011arXiv

Reconfigurable Gradient Index using VO2 Memory Metamaterials

We demonstrate tuning of a metamaterial device that incorporates a form of spatial gradient control. Electrical tuning of the metamaterial is achieved through a vanadium dioxide layer which interacts with an array of split ring resonators. We achieved a spatial gradient in the magnitude of permittivity, writeable using a single transient electrical pulse. This induced gradient in our device is observed on spatial sc ales on the order of one wavelength at 1 THz. Thus, we show the viability of elements for use in future devices with potential applications in beamforming and communications

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preprint2011arXiv

Teaching Memory Circuit Elements via Experiment-Based Learning

The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in solving diverse problems in analog/neuromorphic and digital/quantum computation; the possibility to use them in an integrated computing-memory paradigm, massively-parallel solution of different optimization problems, learning, neural networks, etc. The time is therefore ripe to introduce these elements to the next generation of physicists and engineers with appropriate teaching tools that can be easily implemented in undergraduate teaching laboratories. In this paper, we suggest the use of easy-to-build emulators to provide a hands-on experience for the students to learn the fundamental properties and realize several applications of these memelements. We provide explicit examples of problems that could be tackled with these emulators that range in difficulty from the demonstration of the basic properties of memristive, memcapacitive, and meminductive systems to logic/computation and cross-bar memory. The emulators can be built from off-the-shelf components, with a total cost of a few tens of dollars, thus providing a relatively inexpensive platform for the implementation of these exercises in the classroom. We anticipate that this experiment-based learning can be easily adopted and expanded by the instructors with many more case studies.

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preprint2010arXiv

Memory circuit elements: from systems to applications

In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class. We present several examples, their modeling and applications ranging from analog programming to biological systems. Since the phenomena associated with memory are ubiquitous at the nanoscale, we expect the interest in these circuit elements to increase in coming years.

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preprint2009arXiv

Fourier's Law: insight from a simple derivation

The onset of Fourier's law in a one-dimensional quantum system is addressed via a simple model of weakly coupled quantum systems in contact with thermal baths at their edges. Using analytical arguments we show that the crossover from the ballistic (invalid Fourier's law) to diffusive (valid Fourier's law) regimes is characterized by a thermal length-scale, which is directly related to the profile of the local temperature. In the same vein, dephasing is shown to give rise to a classical Fourier's law, similarly to the onset of Ohm's law in mesoscopic conductors.

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preprint2008arXiv

Theory of non-equilibrium thermoelectric effects in nanoscale junctions

Despite its intrinsic non-equilibrium origin, thermoelectricity in nanoscale systems is usually described within a static scattering approach which disregards the dynamical interaction with the thermal baths that maintain energy flow. Using the theory of open quantum systems we show instead that unexpected properties, such as a resonant structure and large sign sensitivity, emerge if the non-equilibrium nature of this problem is considered. Our approach also allows us to define and study a local temperature, which shows hot spots and oscillations along the system according to the coupling of the latter to the electrodes. This demonstrates that Fourier's law -- a paradigm of statistical mechanics -- is violated at the nanoscale.

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preprint2006arXiv

Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors

We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.

0 citations0 reviewsNo code linkedOpen access