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Y. V. Pershin

Y. V. Pershin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallEmerging Technologiescond-mat.mtrl-scicond-mat.otherNeural and Evolutionary ComputingNeurons and Cognitionphysics.comp-phcond-mat.dis-nnphysics.ins-detcond-mat.stat-mechhep-th

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Published work

29 published item(s)

preprint2021arXiv

Comment on "$Φ$ memristor: Real memristor found" by F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua [J. Appl. Phys. 125, 054504 (2019)]

Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of Wang et al.'s model contradict the experimental curves presented in their paper. Additionally, the theoretical pinched hysteresis loops presented by Wang et al. can not be reproduced if their model is used, and there are serious flaws in their "negative memristor" emulator design. Finally, a simple gedanken experiment shows that the proposed $Φ$-memristor would fail the memristor test we recently suggested in J. Phys. D: Appl. Phys. 52, 01LT01 (2019). The device "discovered" by Wang et al. is just an inductor with memory.

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preprint2020arXiv

An experimental proof that resistance-switching memories are not memristors

It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available electrochemical metallization cells. Our results unambiguously show that electrochemical metallization memory cells are not memristors. Since the particular resistance-switching memories employed in our study share similar features with many other memory cells, our findings refute the claim that all resistance-switching memories are memristors. They also cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. Our results then lead us to formulate two memristor impossibility conjectures regarding the impossibility of building a model of physical resistance-switching memories based on the memristor model.

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preprint2020arXiv

Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells

The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be precisely predicted. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on average, and correlation functions should be used to explore interrelations among the variables. In this paper, we use, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors. Analytical solutions of the master equation for the case of identical memristors connected in-series and in-parallel are found. Our analytical results are supplemented by results of numerical simulations that extend our findings beyond the case of identical memristors. The approach proposed in this paper facilitates the development of probabilistic/stochastic electronic circuits and advance their real-world applications.

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preprint2016arXiv

Memristive model of hysteretic field emission from carbon nanotube arrays

Some instances of electron field emitters are characterized by frequency-dependent hysteresis in their current-voltage characteristics. We argue that such emitters can be classified as memristive systems and introduce a general framework to describe their response. As a specific example of our approach, we consider field emission from a carbon nanotube array. Our experimental results demonstrate a low-field hysteresis, which is likely caused by an electrostatic alignment of some of the nanotubes in the applied field. We formulate a memristive model of such phenomenon whose results are in agreement with the experimental results.

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preprint2016arXiv

The Theory of Spin Noise Spectroscopy: A Review

Direct measurements of spin fluctuations are becoming the mainstream approach for studies of complex condensed matter, molecular, nuclear, and atomic systems. This review covers recent progress in the field of optical Spin Noise Spectroscopy (SNS) with an additional goal to establish an introduction into its theoretical foundations. Various theoretical techniques that have been recently used to interpret results of SNS measurements are explained alongside with examples of their applications.

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preprint2015arXiv

A Memcomputing Pascaline

The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experimentally the memcomputing version of the mechanical Pascaline, capable of processing and storing the numerical results in the multiple levels of each memristive element. Our result is the first experimental demonstration of multidigit arithmetics with multi-level memory devices that further emphasizes the versatility and potential of memristive systems for future massively-parallel high-density computing architectures.

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preprint2015arXiv

Reconfigurable Transmission Lines with Memcapacitive Materials

We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses. In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical applications. We present simulation results demonstrating all major steps of such a reconfigurable device operation including reset, programming and transmission of small amplitude signals. The proposed reconfigurable transmission lines employ only passive memory materials and can be realized using available memcapacitive devices.

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preprint2015arXiv

Switching Synchronization in One-Dimensional Memristive Networks

We report on an astonishing switching synchronization phenomenon in one-dimensional memristive networks, which occurs when several memristive systems with different switching constants are switched from the high to low resistance state. Our numerical simulations show that such a collective behavior is especially pronounced when the applied voltage slightly exceeds the combined threshold voltage of memristive systems. Moreover, a finite increase in the network switching time is found compared to the average switching time of individual systems. An analytical model is presented to explain our observations. Using this model, we have derived asymptotic expressions for memory resistances at short and long times, which are in excellent agreement with our numerical calculations.

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preprint2014arXiv

Memcomputing and Swarm Intelligence

We explore the relation between memcomputing, namely computing with and in memory, and swarm intelligence algorithms. In particular, we show that one can design memristive networks to solve short-path optimization problems that can also be solved by ant-colony algorithms. By employing appropriate memristive elements one can demonstrate an almost one-to-one correspondence between memcomputing and ant colony optimization approaches. However, the memristive network has the capability of finding the solution in one deterministic step, compared to the stochastic multi-step ant colony optimization. This result paves the way for nanoscale hardware implementations of several swarm intelligence algorithms that are presently explored, from scheduling problems to robotics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hybrid Spin Noise Spectroscopy and the Spin Hall Effect

Here we suggest a novel hybrid spin noise spectroscopy technique, which is sensitive to the spin Hall effect. It is shown that, while the standard spin-spin correlation function is not sensitive to the spin Hall effect, spin-transverse voltage and transverse voltage-voltage correlation functions provide the missing sensitivity being linear and quadratic in the spin Hall coefficient, respectively. The correlation between transverse voltage and spin fluctuations appears as a result of spin-charge coupling fundamental for the spin Hall effect. We anticipate that the proposed method could find applications in the studies of spin-charge coupling in semiconductors.

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preprint2013arXiv

Memcapacitive neural networks

We show that memcapacitive (memory capacitive) systems can be used as synapses in artificial neural networks. As an example of our approach, we discuss the architecture of an integrate-and-fire neural network based on memcapacitive synapses. Moreover, we demonstrate that the spike-timing-dependent plasticity can be simply realized with some of these devices. Memcapacitive synapses are a low-energy alternative to memristive synapses for neuromorphic computation.

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preprint2013arXiv

Memcomputing: a computing paradigm to store and process information on the same physical platform

In present day technology, storing and processing of information occur on physically distinct regions of space. Not only does this result in space limitations; it also translates into unwanted delays in retrieving and processing of relevant information. There is, however, a class of two-terminal passive circuit elements with memory, memristive, memcapacitive and meminductive systems -- collectively called memelements -- that perform both information processing and storing of the initial, intermediate and final computational data on the same physical platform. Importantly, the states of these memelements adjust to input signals and provide analog capabilities unavailable in standard circuit elements, resulting in adaptive circuitry, and providing analog massively-parallel computation. All these features are tantalizingly similar to those encountered in the biological realm, thus offering new opportunities for biologically-inspired computation. Of particular importance is the fact that these memelements emerge naturally in nanoscale systems, and are therefore a consequence and a natural by-product of the continued miniaturization of electronic devices. We will discuss the various possibilities offered by memcomputing, discuss the criteria that need to be satisfied to realize this paradigm, and provide an example showing the solution of the shortest-path problem and demonstrate the healing property of the solution path.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

On the physical properties of memristive, memcapacitive, and meminductive systems

We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and inductors with memory emerge naturally in the response of systems - especially those of nanoscale dimensions - subjected to external perturbations. As a consequence, since memristances, memcapacitances, and meminductances are simply response functions, they are not necessarily finite. This means that, unlike what has always been argued in some literature, diverging and non-crossing input-output curves of all these memory elements are physically possible in both quantum and classical regimes. For similar reasons, it is not surprising to find memcapacitances and meminductances that acquire negative values at certain times during dynamics, while the passivity criterion of memristive systems imposes always a non-negative value on the resistance at any given time. We finally show that ideal memristors, namely those whose state depends only on the charge that flows through them (or on the history of the voltage) are subject to very strict physical conditions and are unable to protect their memory state against the unavoidable fluctuations, and therefore are susceptible to a stochastic catastrophe. Similar considerations apply to ideal memcapacitors and meminductors.

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preprint2013arXiv

Reliable SPICE Simulations of Memristors, Memcapacitors and Meminductors

Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of different memory circuit elements and provide a methodology for their accurate and reliable modeling in the SPICE environment. We also provide codes of these models written in the most popular SPICE versions (PSpice, LTspice, HSPICE) for the benefit of the reader. We expect this to be of great value to the growing community of scientists interested in the wide range of applications of memory circuit elements.

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preprint2013arXiv

SPICE model of memristive devices with threshold

Although memristive devices with threshold voltages are the norm rather than the exception in experimentally realizable systems, their SPICE programming is not yet common. Here, we show how to implement such systems in the SPICE environment. Specifically, we present SPICE models of a popular voltage-controlled memristive system specified by five different parameters for PSPICE and NGSPICE circuit simulators. We expect this implementation to find widespread use in circuits design and testing.

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preprint2012arXiv

Changing the state of a memristive system with white noise

Can we change the average state of a resistor by simply applying white noise? We show that the answer to this question is positive if the resistor has memory of its past dynamics (a memristive system). We also prove that, if the memory arises only from the charge flowing through the resistor -- an ideal memristor -- then the current flowing through such memristor can not charge a capacitor connected in series, and therefore cannot produce useful work. Moreover, the memristive system may skew the charge probability density on the capacitor, an effect which can be measured experimentally.

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preprint2012arXiv

Complex dynamics and scale invariance of one-dimensional memristive networks

Memristive systems, namely resistive systems with memory, are attracting considerable attention due to their ubiquity in several phenomena and technological applications. Here, we show that even the simplest one-dimensional network formed by the most common memristive elements with voltage threshold bears non-trivial physical properties. In particular, by taking into account the single element variability we find i) dynamical acceleration and slowing down of the total resistance in adiabatic processes, ii) dependence of the final state on the history of the input signal with same initial conditions, iii) existence of switching avalanches in memristive ladders, and iv) independence of the dynamics voltage threshold with respect to the number of memristive elements in the network (scale invariance). An important criterion for this scale invariance is the presence of memristive systems with very small threshold voltages in the ensemble. These results elucidate the role of memory in complex networks and are relevant to technological applications of these systems.

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preprint2012arXiv

Decay of Persistent Spin Helix due to the Spin Relaxation at Boundaries

We study electron spin relaxation in one-dimensional structures of finite length in the presence of Bychkov-Rashba spin-orbit coupling and boundary spin relaxation. Using a spin kinetic equation approach, we formulate boundary conditions for the case of a partial spin polarization loss at the boundaries. These boundary conditions are used to derive corresponding boundary conditions for spin drift-diffusion equation. The later is solved analytically for the case of relaxation of a homogeneous spin polarization in 1D finite length structures. It is found that the spin relaxation consists of three stages (in some cases, two) -- an initial D'yakonov-Perel' relaxation is followed by spin helix formation and its subsequent decay. Analytical expressions for the decay time are found. We support our analytical results by results of Monte Carlo simulations.

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preprint2012arXiv

Lagrange formalism of memory circuit elements: classical and quantum formulations

The general Lagrange-Euler formalism for the three memory circuit elements, namely, memristive, memcapacitive, and meminductive systems, is introduced. In addition, {\it mutual meminductance}, i.e. mutual inductance with a state depending on the past evolution of the system, is defined. The Lagrange-Euler formalism for a general circuit network, the related work-energy theorem, and the generalized Joule's first law are also obtained. Examples of this formalism applied to specific circuits are provided, and the corresponding Hamiltonian and its quantization for the case of non-dissipative elements are discussed. The notion of {\it memory quanta}, the quantum excitations of the memory degrees of freedom, is presented. Specific examples are used to show that the coupling between these quanta and the well-known charge quanta can lead to a splitting of degenerate levels and to other experimentally observable quantum effects.

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preprint2011arXiv

Analog-to-Digital and Digital-to-Analog Conversion with Memristive Devices

We suggest a novel methodology to obtain a digital representation of analog signals and to perform its back-conversion using memristive devices. In the proposed converters, the same memristive systems are used for two purposes: as elements performing conversion and elements storing the code. This approach to conversion is particularly relevant for interfacing analog signals with memristive digital logic/computing circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Biologically-Inspired Electronics with Memory Circuit Elements

Several abilities of biological systems, such as adaptation to natural environment, or of animals to learn patterns when appropriately trained, are features that are extremely useful, if emulated by electronic circuits, in applications ranging from robotics to solution of complex optimization problems, traffic control, etc. In this chapter, we discuss several examples of biologically-inspired circuits that take advantage of memory circuit elements, namely, electronic elements whose resistive, capacitive or inductive characteristics depend on their past dynamics. We provide several illustrations of what can be accomplished with these elements including learning circuits and related adaptive filters, neuromorphic and cellular computing circuits, analog massively-parallel computation architectures, etc. We also give examples of experimental realizations of memory circuit elements and discuss opportunities and challenges in this new field.

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preprint2011arXiv

Bistable non-volatile elastic membrane memcapacitor exhibiting chaotic behavior

We suggest a realization of a bistable non-volatile memory capacitor (memcapacitor). Its design utilizes a strained elastic membrane as a plate of a parallel-plate capacitor. The applied stress generates low and high capacitance configurations of the system. We demonstrate that a voltage pulse of an appropriate amplitude can be used to reliably switch the memcapacitor into the desired capacitance state. Moreover, charged-voltage and capacitance-voltage curves of such a system demonstrate hysteresis and transition into a chaotic regime in a certain range of ac voltage amplitudes and frequencies. Membrane memcapacitor connected to a voltage source comprises a single element nonautonomous chaotic circuit.

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preprint2011arXiv

Chaotic memristor

We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincaré plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.

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preprint2011arXiv

Dynamics of Spin Relaxation in Finite-Size 2D Systems: an Exact Solution

We find an exact solution for the problem of electron spin relaxation in a 2D circle with Rashba spin-orbit interaction. Our analysis shows that the spin relaxation in finite-size regions involves three stages and is described by multiple spin relaxation times. It is important that the longest spin relaxation time increases with decrease in system radius but always remains finite. Therefore, at long times, the spin polarization in small 2D systems decays exponentially with a size-dependent rate. This prediction is supported by results of Monte Carlo simulations.

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preprint2011arXiv

Kinetics of Spin Relaxation in Wires and Channels: Boundary Spin Echo and Tachyons

In this paper we use a spin kinetic equation to study spin polarization dynamics in 1D wires and 2D channels. This approach is valid in both diffusive and ballistic spin transport regimes and, therefore, more general than the usual spin drift-diffusion equations. In particular, we demonstrate that in infinite 1D wires with Rashba spin-orbit interaction the exponential spin relaxation decay can be modulated by an oscillating function. In the case of spin relaxation in finite length 1D wires, it is shown that an initially homogeneous spin polarization spontaneously transforms into a persistent spin helix. An interesting sound waves echo-like behavior of initially localized spin polarization packet is found in finite length wires. We show that a propagating spin polarization profile reflects from a system boundary and returns back to its initial position similarly to the reflectance of sound waves from an obstacle. Green's function of spin kinetic equation is found for both finite and infinite 1D systems. Moreover, we demonstrate explicitly that the spin relaxation in 2D channels with Rashba and Dresselhaus spin-orbit interactions of equal strength occurs similarly to that in 1D wires of finite length. Finally, a simple transformation mapping 1D spin kinetic equation into the Klein-Gordon equation with an imaginary mass is found thus establishing an interesting connection between semiconductor spintronics and relativistic quantum mechanics.

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preprint2011arXiv

Spin relaxation in Rashba rings

Spin relaxation dynamics in rings with Rashba spin-orbit coupling is investigated using spin kinetic equation. We find that the spin relaxation in rings occurs toward a persistent spin configuration whose final shape depends on the initial spin polarization profile. As an example, it is shown that a homogeneous parallel to the ring axis spin polarization transforms into a persistent crown-like spin structure. It is demonstrated that the ring geometry introduces a geometrical contribution to the spin relaxation rate speeding up the transient dynamics. Moreover, we identify several persistent spin configurations as well as calculate the Green function of spin kinetic equation.

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preprint2011arXiv

Spontaneous Emergence of Persistent Spin Helix from Homogeneous Spin Polarization

We demonstrate that a homogeneous spin polarization in one-dimensional structures of finite length in the presence of Bychkov-Rashba spin-orbit coupling decays spontaneously toward a persistent spin helix. The analysis of formation of spin helical state is presented within a novel approach based on a mapping of spin drift-diffusion equations into a heat equation for a complex field. Such a strikingly different and simple method allows generating robust spin structures whose properties can be tuned by the strength of the spin orbit interaction and/or structure's length. We generalize our results for two-dimensional case predicting formation of persistent spin helix in two-dimensional channels from homogeneous spin polarization.

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preprint2011arXiv

Teaching Memory Circuit Elements via Experiment-Based Learning

The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in solving diverse problems in analog/neuromorphic and digital/quantum computation; the possibility to use them in an integrated computing-memory paradigm, massively-parallel solution of different optimization problems, learning, neural networks, etc. The time is therefore ripe to introduce these elements to the next generation of physicists and engineers with appropriate teaching tools that can be easily implemented in undergraduate teaching laboratories. In this paper, we suggest the use of easy-to-build emulators to provide a hands-on experience for the students to learn the fundamental properties and realize several applications of these memelements. We provide explicit examples of problems that could be tackled with these emulators that range in difficulty from the demonstration of the basic properties of memristive, memcapacitive, and meminductive systems to logic/computation and cross-bar memory. The emulators can be built from off-the-shelf components, with a total cost of a few tens of dollars, thus providing a relatively inexpensive platform for the implementation of these exercises in the classroom. We anticipate that this experiment-based learning can be easily adopted and expanded by the instructors with many more case studies.

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preprint2010arXiv

Memory circuit elements: from systems to applications

In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class. We present several examples, their modeling and applications ranging from analog programming to biological systems. Since the phenomena associated with memory are ubiquitous at the nanoscale, we expect the interest in these circuit elements to increase in coming years.

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