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Kyung-Hwan Jin

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el physics.comp-ph

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preprint2025arXiv

Yu-Shiba-Rusinov bound states of exciton condensate

Quantum condensed states in solids often reveal their fundamental nature via interactions with impurities, as epitomized by Yu-Shiba-Rusinov (YSR) bound states at magnetic impurities in superconductors. Although analogous YSR bound states were predicted within quantum condensates of excitons several decades ago, their existence has been elusive. Here, we directly visualize in-gap electronic states bound to impurities inside an exciton condensate phase of a van der Waals crystal Ta2Pd3Te5, utilizing scanning tunneling microscopy and spectroscopy. We find that the energies of in-gap states are strongly correlated with the excitonic band gap, which is systematically tuned by local strain and carrier injection. Our theoretical analyses reveal that these in-gap states are induced by charge dipoles associated with Ta vacancies through a charge-exciton version of the YSR mechanism. Our findings establish both the YSR physics in exciton condensates and a novel microscopic tool to probe and control quantum properties in exciton condensates persisting up to room temperature.

preprint2024arXiv

Microscopic Origin of Chiral Charge Density Wave in TiSe2

Chiral charge density wave (CDW) is widely observed in low dimensional systems to be entangled with various emerging phases but its microscopic origin has been elusive. We reinvestigate the representative but debated chiral CDW of TiSe$_{2}$ using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Our STM data reveal unambiguously the chiral distortion of the topmost Se layer in domains of opposite chirality, which are interfaced with a novel domain wall. DFT calculations find the atomic structure of the chiral CDW, which has a $C2$ symmetry with the inversion and reflection symmetry broken. The chirality is determined by the helicity of Se-Ti bond distortions and their translation between neighboring layers. The present structure reproduces well the STM images with lower energy than the prevailing non-chiral $P\bar{3}c1$ structure model. Our result provides the atomistic understanding of the CDW chirality in TiSe$_{2}$, which can be referred to in a wide class of monolayer and layered materials with CDW.

preprint2022arXiv

Metrology of Band Topology via Resonant Inelastic X-ray Scattering

Topology is a central notion in the classification of band insulators and characterization of entangled many-body quantum states. In some cases, it manifests as quantized observables such as quantum Hall conductance. However, being inherently a global property depending on the entirety of the system, its direct measurement has remained elusive to local experimental probes in many cases. Here, we demonstrate that various topological band indices can be directly probed by resonant inelastic x-ray scattering. Specifically, we show that the crystalline symmetry eigenvalues at the high-symmetry momentum points, which determine the band topology, leads to distinct scattering intensity for particular momentum and energy. Our approach can be explicitly demonstrated in several examples such as 1D Su-Schrieffer-Heeger chain, 2D quadrupole insulator, 3D topological band insulator, and chiral hinge insulator. Our result establishes an incisive bulk probe for the measurement of band topology.

preprint2020arXiv

Honeycomb-Lattice Mott insulator on Tantalum Disulphide

Effects of electron many-body interactions amplify in an electronic system with a narrow bandwidth opening a way to exotic physics. A narrow band in a two-dimensional (2D) honeycomb lattice is particularly intriguing as combined with Dirac bands and topological properties but the material realization of a strongly interacting honeycomb lattice described by the Kane-Mele-Hubbard model has not been identified. Here we report a novel approach to realize a 2D honeycomb-lattice narrow-band system with strongly interacting 5$d$ electrons. We engineer a well-known triangular lattice 2D Mott insulator 1T-TaS$_2$ into a honeycomb lattice utilizing an adsorbate superstructure. Potassium (K) adatoms at an optimum coverage deplete one-third of the unpaired $d$ electrons and the remaining electrons form a honeycomb lattice with a very small hopping. Ab initio calculations show extremely narrow Z$_2$ topological bands mimicking the Kane-Mele model. Electron spectroscopy detects an order of magnitude bigger charge gap confirming the substantial electron correlation as confirmed by dynamical mean field theory. It could be the first artificial Mott insulator with a finite spin Chern number.

preprint2016arXiv

Topological phase transition and quantum spin Hall edge states of antimony few layers

While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.

preprint2015arXiv

Proximity Effect Induced Electronic Properties of Epitaxial Graphene on Bi2Te2Se

We report that the π-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial Bi2Te2Se (BTS) films on a chemical vapor deposition (CVD) graphene. We observe two linear surface bands both from the CVD graphene notably flattened and BTS coexisting with their DPs separated by 0.53 eV in the photoemission data measured with synchrotron photons. We further demonstrate that the separation between the two DPs, ΔD-D, can be artificially fine-tuned by adjusting the amount of Cs atoms adsorbed on the graphene to a value as small as ΔD-D = 0.12 eV to find any proximity effect induced by the DPs. Our density functional theory calculation shows a spin-orbit gap of ~20 meV in the π-band enhanced by three orders of magnitude from that of a pristine graphene, and a concomitant phase transition from a semi-metallic to a quantum spin Hall phase when ΔD-D $\leq$ 0.20 eV. We thus present a practical means of spin-polarizing the π-band of graphene, which can be pivotal to advance the graphene-based spintronics.

preprint2015arXiv

Topological fate of edge states of Bi single bilayer on Bi(111)

We address the topological nature of electronic states of step edges of Bi(111) films by first principles band structure calculations. We confirm that the dispersion of step edge states reflects the topological nature of underlying films. This result unambiguously denies recent claims that the step edge state on the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) films represents non-trivial edge states of the two dimensional topologcial insulator phase expected for a very thin Bi(111) film. The trivial step edge states have a gigantic spin splitting of one dimensional Rashba bands and the substantial intermixing with electronic states of the bulk, which might be exploited further.

preprint2014arXiv

Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se

The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].

preprint2014arXiv

Transforming a Surface State of Topological Insulator by a Bi Capping Layer

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.

preprint2013arXiv

Spin-Chiral Bulk Fermi Surfaces of BiTeI Proven by Quantum Oscillations

We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic fields, we find a substantial Zeeman effect with an effective g-factor of ~ 60 for the Rashba-split Fermi surfaces. These findings provide clear evidence of strong Rashba and Zeeman coupling in the bulk states of BiTeI, suggesting that BiTeI is a good platform hosting the spin-polarized chiral states.

preprint2012arXiv

Proximity-induced giant spin-orbit interaction in epitaxial graphene on topological insulator

Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study the electronic structure of graphene-Sb2Te3 heterostructure using density functional theory and tight-binding methods. We show that the epitaxial graphene on Sb2Te3 turns into quantum spin-Hall phase due to its proximity to the topological insulating Sb2Te3. It is found that the epitaxial graphene develops a giant spin-orbit gap of about ~20 meV, which is about three orders of magnitude larger than that of pristine graphene. We discuss the origin of such enhancement of the spin-orbit interaction and possible outcomes of the spin-Hall phase in graphene.