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Han Woong Yeom

Han Woong Yeom appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.dis-nnphysics.ins-det

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Published work

25 published item(s)

preprint2025arXiv

Yu-Shiba-Rusinov bound states of exciton condensate

Quantum condensed states in solids often reveal their fundamental nature via interactions with impurities, as epitomized by Yu-Shiba-Rusinov (YSR) bound states at magnetic impurities in superconductors. Although analogous YSR bound states were predicted within quantum condensates of excitons several decades ago, their existence has been elusive. Here, we directly visualize in-gap electronic states bound to impurities inside an exciton condensate phase of a van der Waals crystal Ta2Pd3Te5, utilizing scanning tunneling microscopy and spectroscopy. We find that the energies of in-gap states are strongly correlated with the excitonic band gap, which is systematically tuned by local strain and carrier injection. Our theoretical analyses reveal that these in-gap states are induced by charge dipoles associated with Ta vacancies through a charge-exciton version of the YSR mechanism. Our findings establish both the YSR physics in exciton condensates and a novel microscopic tool to probe and control quantum properties in exciton condensates persisting up to room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Microscopic Origin of Chiral Charge Density Wave in TiSe2

Chiral charge density wave (CDW) is widely observed in low dimensional systems to be entangled with various emerging phases but its microscopic origin has been elusive. We reinvestigate the representative but debated chiral CDW of TiSe$_{2}$ using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Our STM data reveal unambiguously the chiral distortion of the topmost Se layer in domains of opposite chirality, which are interfaced with a novel domain wall. DFT calculations find the atomic structure of the chiral CDW, which has a $C2$ symmetry with the inversion and reflection symmetry broken. The chirality is determined by the helicity of Se-Ti bond distortions and their translation between neighboring layers. The present structure reproduces well the STM images with lower energy than the prevailing non-chiral $P\bar{3}c1$ structure model. Our result provides the atomistic understanding of the CDW chirality in TiSe$_{2}$, which can be referred to in a wide class of monolayer and layered materials with CDW.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Z3 Charge Density Wave of Silicon Atomic Chains on a Vicinal Silicon Surface

An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces but the nature of its low temperature phases has been puzzled for last two decades. Here, we unambiguously identify the low temperature structural distortion of this surface using high resolution atomic force microscopy and scanning tunneling microscopy. The most important structural ingredient of this surface, the step-edge Si chains are found to be strongly buckled, every third atoms down, forming trimer unitcells. This observation is consistent with the recent model of rehybridized dangling bonds and rules out the antiferromagnetic spin ordering proposed earlier. The spectroscopy and electronic structure calculation indicate a charge density wave insulator with a Z3 topology making it possible to exploit topological phases and excitations. Tunneling current was found to substantially lower the energy barrier between three degenerate CDW states, which induces a dynamically fluctuating CDW at very low temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Creation and annihilation of mobile fractional solitons in atomic chains

Localized modes in one dimensional topological systems, such as Majonara modes in topological superconductors, are promising platforms for robust information processing. In one dimensional topological insulators, mobile topological solitons are expected but have not been fully realized yet. We discover fractionalized phase defects moving along trimer silicon atomic chains formed along step edges of a vicinal silicon surface. Tunneling microscopy identifies local defects with phase shifts of 2π/3 and 4π/3 with their electronic states within the band gap and with their motions activated above 100 K. Theoretical calculations reveal the topological soliton origin of the phase defects with fractional charges of {\pm}2e/3 and {\pm}4e/3. An individual soliton can be created and annihilated at a desired location by current pulse from the probe tip. Mobile and manipulatable topological solitons discovered here provide a new platform of robustly-protected informatics with extraordinary functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Artificial Relativistic Molecules

We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The spin-orbit coupling is essential both in forming such Dirac electronic states and stabilizing the artificial molecules by reducing the adatom-substrate interaction. Lead atoms are found to be ideally suited for a maximized relativistic effect. This work initiates the use of novel two dimensional orderings to guide the fabrication of artificial molecules of unprecedented properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomic structures and electronic correlation of monolayer 1T-TaSe2

We investigate atomic and electronic structures of monolayer 1T-TaSe2 using density functional theory calculations. Monolayers of 1T-TaSe2 were recently grown on graphene substrates and suggested as an intriguing Mott insulator [Nat. Phys. 16, 218 (2020)]. However, the prevailing structural model for the model system of 1T-TaS2, the cation-centered cluster of a David-star shape with strong electron correlation, could not explain the characteristic and unusual orbital splitting observed in scanning tunneling spectroscopy experiments. We suggest an alternative structure model, an anion-centered cluster structure, which can reproduce most of the unusual spectroscopic characteristics with electron doping from the substrate without electron correlation. The unusual spectroscopic features observed, thus, seems to indicate a simple and usual band insulating state. This work indicates the importance of a large structural degree of freedom given for a cluster Mott insulator.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Honeycomb-Lattice Mott insulator on Tantalum Disulphide

Effects of electron many-body interactions amplify in an electronic system with a narrow bandwidth opening a way to exotic physics. A narrow band in a two-dimensional (2D) honeycomb lattice is particularly intriguing as combined with Dirac bands and topological properties but the material realization of a strongly interacting honeycomb lattice described by the Kane-Mele-Hubbard model has not been identified. Here we report a novel approach to realize a 2D honeycomb-lattice narrow-band system with strongly interacting 5$d$ electrons. We engineer a well-known triangular lattice 2D Mott insulator 1T-TaS$_2$ into a honeycomb lattice utilizing an adsorbate superstructure. Potassium (K) adatoms at an optimum coverage deplete one-third of the unpaired $d$ electrons and the remaining electrons form a honeycomb lattice with a very small hopping. Ab initio calculations show extremely narrow Z$_2$ topological bands mimicking the Kane-Mele model. Electron spectroscopy detects an order of magnitude bigger charge gap confirming the substantial electron correlation as confirmed by dynamical mean field theory. It could be the first artificial Mott insulator with a finite spin Chern number.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stable Flatbands, Topology, and Superconductivity of Magic Honeycomb Networks

We propose a new principle to realize flatbands which are robust in real materials, based on a network superstructure of one-dimensional segments. This mechanism is naturally realized in the nearly commensurate charge-density wave of 1T-TaS${}_2$ with the honeycomb network of conducting domain walls, and the resulting flatband can naturally explain the enhanced superconductivity. We also show that corner states, which are a hallmark of the higher-order topological insulators, appear in the network superstructure.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet

Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrical currents but have been much less explored due to the lack of suitable materials. Here, utilizing the extreme sensitivity of the vdW interlayer magnetism to material composition, we report the itinerant antiferromagnetism in Co-doped Fe4GeTe2 with TN ~ 210 K, an order of magnitude increased as compared to other known AFM vdW metals. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, temperature, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets with tunable interlayer exchange interaction and magnetic anisotropy, suitable for AFM spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Construction of a $^3$He magnetic force microscope with a vector magnet

We constructed a $^3$He magnetic force microscope operating at the base temperature of 300 mK under a vector magnetic field of 2-2-9 T in the $x-y-z$ direction. Fiber optic interferometry as a detection scheme is employed in which two home-built fiber walkers are used for the alignment between the cantilever and the optical fiber. The noise level of the laser interferometer is close to its thermodynamic limit. The capabilities of the sub-Kelvin and vector field are demonstrated by imaging the coexistence of magnetism and superconductivity in a ferromagnetic superconductor (ErNi$_2$B$_2$C) at $T$=500 mK and by probing a dipole shape of a single Abrikosov vortex with an in-plane tip magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanoscale Superconducting Honeycomb Charge Order in IrTe2

Entanglement of charge orderings and other electronic orders such as superconductivity is in the core of challenging physics issues of complex materials including high temperature superconductivity. Here, we report on the observation of a unique nanometer scale honeycomb charge ordering of the cleaved IrTe2 surface, which hosts a superconducting state. IrTe2 was recently established to exhibit an intriguing cascade of stripe charge orders. The stripe phases coexist with a hexagonal phase, which is formed locally and falls into a superconducting state below 3 K. The atomic and electronic structures of the honeycomb and hexagon pattern of this phase are consistent with the charge order nature but the superconductivity does not survive on neighboring stripe charge order domains. The present work provides an intriguing physics issue and a new direction of functionalization for two dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Topological phase transition and quantum spin Hall edge states of antimony few layers

While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron Quantization in Broken Atomic Wires

We demonstrate using scanning tunneling microscopy and spectroscopy the electron quantization within metallic Au atomic wires self-assembled on a Si(111) surface and segmented by adatom impurities. The local electronic states of wire segments with a length up to 10 nm are investigated as terminated by two neighboring Si adatoms. One dimensional (1D) quantum well states are well resolved by their spatial distributions and the inverse-length-square dependence in their energies. The quantization also results in the quantum oscillation of the conductance at the Fermi level. These results deny the dopant role of the adatoms assumed for a long time but indicate their strong scattering nature. The present approach provides a new and convenient platform to investigate 1D quantum phenomena with atomic precision.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic domain tuning and the emergence of bubble domains in the bilayer manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ (x=0.32)

We report a magnetic force microscopy study of the magnetic domain evolution in the layered manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ (with $x=0.32$). This strongly correlated electron compound is known to exhibit a wide range of magnetic phases, including a recently uncovered biskyrmion phase. We observe a continuous transition from dendritic to stripe-like domains, followed by the formation of magnetic bubbles due to a field- and temperature dependent competition between in-plane and out-of-plane spin alignments. The magnetic bubble phase appears at comparable field- and temperature ranges as the biskyrmion phase, suggesting a close relation between both phases. Based on our real-space images we construct a temperature-field phase diagram for this composition.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spatially resolved penetration depth measurements and vortex manipulation in the ferromagnetic superconductor ErNi2B2C

We present a local probe study of the magnetic superconductor, ErNi$_2$B$_2$C, using magnetic force microscopy at sub-Kelvin temperatures. ErNi$_2$B$_2$C is an ideal system to explore the effects of concomitant superconductivity and ferromagnetism. At 500 mK, far below the transition to a weakly ferromagnetic state, we directly observe a structured magnetic background on the micrometer scale. We determine spatially resolved absolute values of the magnetic penetration depth $λ$ and study its temperature dependence as the system undergoes magnetic phase transitions from paramagnetic to antiferromagnetic, and to weak ferromagnetic, all within the superconducting regime. In addition, we estimate the absolute pinning force of Abrikosov vortices, which shows a position- and temperature dependence as well, and discuss the possibility of the purported spontaneous vortex formation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Topological fate of edge states of Bi single bilayer on Bi(111)

We address the topological nature of electronic states of step edges of Bi(111) films by first principles band structure calculations. We confirm that the dispersion of step edge states reflects the topological nature of underlying films. This result unambiguously denies recent claims that the step edge state on the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) films represents non-trivial edge states of the two dimensional topologcial insulator phase expected for a very thin Bi(111) film. The trivial step edge states have a gigantic spin splitting of one dimensional Rashba bands and the substantial intermixing with electronic states of the bulk, which might be exploited further.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se

The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Impurity-mediated early condensation of an atomic layer electronic crystal

While impurity has been known widely to affect phase transitions, the atomistic mechanisms have rarely been disclosed. We directly show in atomic scale how impurity atoms induces the condensation of a representative electronic phase, charge density wave (CDW), with scanning tunneling microscopy. Oxygen impurity atoms on the self-assembled metallic atomic wire array on a silicon crystal condense CDW locally even above the transition temperature, More interestingly, the CDW along the wires is induced not by a single atomic impurity but by the cooperation of multiple impurities. First principles calculations disclose the mechanism of the cooperation as the coherent superposition of the local lattice strain induced by impurities, stressing the coupled electronic and lattice degrees of freedom for CDW. This newly discovered mechanism can widely be applied to various important electronic orders coupled to lattice, opening the possibility of the atomic scale strain engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Structural versus electronic distortions of symmetry-broken IrTe$_2$

We investigate atomic and electronic structures of the intriguing low temperature phase of IrTe2 using high-resolution scanning tunneling microscopy and spectroscopy. We confirm various stripe superstructures such as $\times$3, $\times$5, and $\times$8. The strong vertical and lateral distortions of the lattice for the stripe structures are observed in agreement with recent calculations. The spatial modulations of electronic density of states are clearly identified as separated from the structural distortions. These structural and spectroscopic characteristics are not consistent with the charge-density wave and soliton lattice model proposed recently. Instead, we show that the Ir (Te) dimerization together with the Ir 5d charge ordering can explain these superstructures, supporting the Ir dimerization mechanism of the phase transition.

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preprint2014arXiv

Transforming a Surface State of Topological Insulator by a Bi Capping Layer

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Self-Assembled Nanowires with Giant Rashba-Type Band Splitting

We investigated Pt-induced nanowires on the Si(110) surface using scanning tunneling microscopy (STM) and angle-resolved photoemission (ARP). High resolution STM images show a well-ordered nanowire array of 1.6 nm width and 2.7 nm separation. ARP reveals fully occupied one dimensional (1D) bands with a Rashba-type split dispersion. Local dI/dV spectra further indicate well confined 1D electron channels on the nanowires, whose density of states characteristics are consistent with the Rashba-type band splitting. The observed energy and momentum splitting of the bands are among the largest ever reported for Rashba systems, suggesting the Pt-Si nanowire as a unique 1D giant Rashba system. This self-assembled nanowire can be exploited for silicon-based spintronics devices as well as the quest for Majorana Fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological Solitons versus Non-Solitonic Phase Defects in Quasi-One-Dimensional Charge Density Wave

We investigated phase defects in a quasi-one-dimensional commensurate charge density wave (CDW) system, an In atomic wire array on Si(111), using low temperature scanning tunneling microscopy. The unique four-fold degeneracy of the CDW state leads to various phase defects, among which intrinsic solitons are clearly distinguished. The solitons exhibit a characteristic variation of the CDW amplitude with a coherence length of about 4 nm, as expected from the electronic structure, and a localized electronic state within the CDW gap. While most of the observed solitons are trapped by extrinsic defects, moving solitons are also identified and their novel interaction with extrinsic defects is disclosed.

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preprint2011arXiv

Radial Band Structure of Electrons in Liquid Metals

The electronic band structure of a liquid metal was investigated by measuring precisely the evolution of angle-resolved photoelectron spectra during the melting of a Pb monolayer on a Si(111) surface. We found that the liquid monolayer exhibits a free-electron-like band and it undergoes a coherent radial scattering, imposed by the radial correlation of constituent atoms, to form a characteristic secondary hole band. This unique double radial bands and their gradual evolution during melting can be quantitatively reproduced, including detailed spectral intensity profiles, with our radial scattering model based on a theoretical prediction of 1962. Our result establishes the radial band structure as a key concept for describing the nature of electrons in strongly disordered states of matter.

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preprint2010arXiv

Nearly Massless Electrons in the Silicon Interface with a Metal Film

We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied for various other semiconductor devices.

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