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Jun Sung Kim

Jun Sung Kim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.app-ph

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Published work

28 published item(s)

preprint2022arXiv

Dimensional crossover of charge order in IrTe$_2$ with strong interlayer coupling

Tuning dimensionality in van der Waals materials with finite interlayer coupling has introduced various electronic phase transitions by conventional mechanical exfoliation. Particularly when the electronic order is tied to the modulation of the interlayer coupling, such dimensional tunability has a strong impact on its stability and properties, which has rarely been investigated experimentally. Here, we demonstrate a dimensional crossover of charge order in IrTe$_2$ from genuine two- to quasi-three-dimension using low-temperature scanning tunneling microscopy and spectroscopy. Employing atomically thin IrTe$_2$ flakes ranging from monolayer to multilayer, we observe a gradual phase transition of charge order and exponential decay of Coulomb gap with increasing thickness. Moreover, we find a suppression of the density of states emerging at an abrupt lateral interface between two- and three-dimension. These findings are attributed to the interplay between the strongly coupled layers and substrate-driven perturbation, which can provide a new insight into the dimensional crossover of strongly coupled layered materials with hidden electronic phases.

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preprint2021arXiv

Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN.

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preprint2021arXiv

Spin-orbit Torque Switching in an All-Van der Waals Heterostructure

Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of $ξ{\approx}4.6$ and $σ{\approx}2.25{\times}10^5 Ω^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{\times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.

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preprint2020arXiv

Observation of the in-plane magnetic field-induced phase transitions in FeSe

We investigate the thermodynamic properties of FeSe under the in-plane magnetic fields using torque magnetometry, specific heat, magnetocaloric measurements. Below the upper critical field Hc2, we observed the field-induced anomalies at H1 ~ 15 T and H2 ~ 22 T near H//ab and below a characteristic temperature T* ~ 2 K. The transition magnetic fields H1 and H2 exhibit negligible dependence on both temperature and field orientation. This contrasts with the strong temperature and angle dependence of Hc2, suggesting that these anomalies are attributed to the field-induced phase transitions, originating from the inherent spin-density-wave instability of quasiparticles near the superconducting gap minima or possible Flude-Ferrell-Larkin-Ovchinnikov state in the highly spin-polarized Fermi surfaces. Our observations imply that FeSe, an atypical multiband superconductor with extremely small Fermi energies, represents a unique model system for stabilizing unusual superconducting orders beyond the Pauli limit.

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preprint2020arXiv

Proximity-induced hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs

Symmetry is one of the most significant concepts in physics, and its importance has been largely manifested in phase transitions by its spontaneous breaking. In strongly correlated systems, however, mysterious and enigmatic phase transitions, inapplicable of the symmetry description, have been discovered and often dubbed hidden order transitions, as found in, $\it{e.g.}$, high-$T_C$ cuprates, heavy fermion superconductors, and quantum spin liquid candidates. Here, we report a new type of hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs, whose origin is attributed to an unusually enhanced Kondo-type proximity coupling between localized spins of V and itinerant electrons of FeAs. Most notably, a fully isotropic gap opening, identified by angle-resolved photoemission spectroscopy, occurs selectively in one of the Fermi surfaces below $T_{\rm HO}$ $\sim$ 150 K, associated with a singular behavior of the specific heat and a strong enhancement on the anisotropic magnetoresistance. These observations are incompatible with the prevalent broken-symmetry-driven scenarios of electronic gap opening and highlight a critical role of proximity coupling. Our findings demonstrate that correlated heterostructures offer a novel platform for design and engineering of exotic hidden order phases.

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preprint2020arXiv

Pulsed-laser epitaxy of metallic delafossite PdCrO$_2$ films

Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material may enable not only tuning the basic physical properties beyond what bulk materials can exhibit, but also developing novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinities, the direct growth of epitaxial PdCrO2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities between the substrates and volatile nature of PdO layer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO2 buffer layers before PdCrO2 were grown. Unlike PdCrO2, CuCrO2 films were rather readily grown with a relatively wide growth window. Only monolayer thick buffer layer was sufficient to grow the correct PdCrO2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness.

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preprint2020arXiv

Separate tuning of nematicity and spin fluctuations to unravel the origin of superconductivity in FeSe

The interplay of orbital and spin degrees of freedom is the fundamental characteristic in numerous condensed matter phenomena, including high temperature superconductivity, quantum spin liquids, and topological semimetals. In iron-based superconductors (FeSCs), this causes superconductivity to emerge in the vicinity of two other instabilities: nematic and magnetic. Unveiling the mutual relationship among nematic order, spin fluctuations, and superconductivity has been a major challenge for research in FeSCs, but it is still controversial. Here, by carrying out 77Se nuclear magnetic resonance (NMR) measurements on FeSe single crystals, doped by cobalt and sulfur that serve as control parameters, we demonstrate that the superconducting transition temperature Tc increases in proportion to the strength of spin fluctuations, while it is independent of the nematic transition temperature Tnem. Our observation therefore directly implies that superconductivity in FeSe is essentially driven by spin fluctuations in the intermediate coupling regime, while nematic fluctuations have a marginal impact on Tc.

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preprint2020arXiv

Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet

Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrical currents but have been much less explored due to the lack of suitable materials. Here, utilizing the extreme sensitivity of the vdW interlayer magnetism to material composition, we report the itinerant antiferromagnetism in Co-doped Fe4GeTe2 with TN ~ 210 K, an order of magnitude increased as compared to other known AFM vdW metals. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, temperature, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets with tunable interlayer exchange interaction and magnetic anisotropy, suitable for AFM spintronic applications.

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preprint2016arXiv

Anomalous Magnetothermopower in a Metallic Frustrated Antiferromagnet

We report the temperature $T$ and magnetic field $H$ dependence of the thermopower $S$ of an itinerant triangular antiferromagnet PdCrO$_2$ in high magnetic fields up to 32 T. In the paramagnetic phase, the zero-field thermopower is positive with a value typical of good metals with a high carrier density. In marked contrast to typical metals, however, $S$ decreases rapidly with increasing magnetic field, approaching zero at the maximum field scale for $T >$ 70 K. We argue here that this profound change in the thermoelectric response derives from the strong interaction of the 4$d$ correlated electrons of the Pd ions with the short-range spin correlations of the Cr$^{3+}$ spins that persist beyond the Néel ordering temperature due to the combined effects of geometrical frustration and low dimensionality.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene

Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley, providing eight-fold degeneracy in the low energy states. We have investigated broken-symmetry quantum Hall (QH) states and their transitions due to the interplay of the relative strength of valley, spin and layer polarizations in twisted bilayer graphene. The energy gaps of the broken-symmetry QH states show an electron-hole asymmetric behaviour, and their dependence on the induced displacement field are opposite between even and odd filling factor states. These results strongly suggest that the QH states with broken valley and spin symmetries for individual layer become hybridized via interlayer tunnelling, and the hierarchy of the QH states is sensitive to both magnetic field and displacement field due to charge imbalance between layers.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Topological phase transition and quantum spin Hall edge states of antimony few layers

While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.

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preprint2014arXiv

Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface

We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$Se$_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi$_2$Se$_3$ interface, which would be useful for implementing an electric contact with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings.

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preprint2014arXiv

Dimerization-Induced Fermi-Surface Reconstruction in IrTe2

We report a de Haas-van Alphen (dHvA) oscillation study on IrTe2 single crystals showing complex dimer formations. By comparing the angle dependence of dHvA oscillations with band structure calculations, we show distinct Fermi surface reconstruction induced by a 1/5-type and a 1/8-type dimerizations. This verifies that an intriguing quasi-two-dimensional conducting plane across the layers is induced by dimerization in both cases. A phase transition to the 1/8 phase with higher dimer density reveals that local instabilities associated with intra- and interdimer couplings are the main driving force for complex dimer formations in IrTe2.

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preprint2014arXiv

Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se

The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].

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preprint2014arXiv

Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene

We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher than ~10^19 cm-3. Our in situ X-ray diffraction study shows that the Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion from the bottom layer without any structural distortion by interfacial strain. The magnetotransport measurements including SdH oscillations stemming from multiple conductance channels reveal that the topological surface state, with the mobility as high as ~0.5 m^2/Vs, remains intact from the graphene underneath without degradation. Given that the graphene was prepatterned on arbitrary insulating substrates, the TI-based microelectronic design could be exploited. Our study thus provides a step forward to observe the topological surface states at the interface without degradation by tuning the interface between TI and graphene into a measurable current for device application.

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preprint2014arXiv

Transforming a Surface State of Topological Insulator by a Bi Capping Layer

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.

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preprint2013arXiv

Anisotropic Dirac electronic structures of AMnBi$_2$ (A=Sr, Ca)

Low energy electronic structures in AMnBi2 (A=alkaline earths) are investigated using a first-principles calculation and a tight binding method. An anisotropic Dirac dispersion is induced by the checkerboard arrangement of A atoms above and below the Bi square net in AMnBi2. SrMnBi2 and CaMnBi2 have a different kind of Dirac dispersion due to the different stacking of nearby A layers, where each Sr (Ca) of one side appears at the overlapped (alternate) position of the same element at the other side. Using the tight binding analysis, we reveal the chirality of the anisotropic Dirac electrons as well as the sizable spin-orbit coupling effect in the Bi square net. We suggest that the Bi square net provides a platform for the interplay between anisotropic Dirac electrons and the neighboring environment such as magnetism and structural changes.

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preprint2013arXiv

Microscopic mechanism for asymmetric charge distribution in Rashba-type surface states and the origin of the the energy splitting scale

Microscopic mechanism for the Rashba-type band splitting is examined in detail. We show how asymmetric charge distribution is formed when local orbital angular momentum (OAM) and crystal momentum get interlocked due to surface effects. An electrostatic energy term in the Hamiltonian appears when such OAM and crystal momentum dependent asymmetric charge distribution is placed in an electric field produced from an inversion symmetry breaking (ISB). Analysis by using an effective Hamiltonian shows that, as the atomic spin-orbit coupling (SOC) strength increases from weak to strong, originally OAM-quenched states evolve into well-defined chiral OAM states and then to total angular momentum J-states. In addition, the energy scale of the band splitting changes from atomic SOC energy to electrostatic energy. To confirm the validity of the model, we study OAM and spin structures of Au(111) system by using an effective Hamiltonian for the d-orbitals case. As for strong SOC regime, we choose Bi2Te2Se as a prototype system. We performed circular dichroism angle resolved photoemission spectroscopy experiments as well as first-principles calculations. We find that the effective model can explain various aspects of spin and OAM structures of the system.

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preprint2013arXiv

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by van der Waals epitaxy mechanism. Weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films.

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preprint2013arXiv

Quantum Oscillations of the Metallic Triangular-lattice Antiferromagnet PdCrO2

We report the de Haas-van Alphen (dHvA) oscillations and first-principle calculations for triangular antiferromagnet PdCrO2 showing unconventional anomalous Hall effect (AHE). The dHvA oscillations in PdCrO2 reveal presence of several 2 dimensional Fermi surfaces of smaller size than found in nonmagnetic PdCoO2. This evidences Fermi surface reconstruction due to the non-collinear 120 antiferromagnetic ordering of the localized Cr, consistent with the first principle calculations. The temperature dependence of dHvA oscillations shows no signature of additional modification of Cr spin structure below TN. Considering that the 120 helical ordering of Cr spins has a zero scalar spin chirality, our results suggest that PdCrO2 is a rare example of the metallic triangular antiferromagnets whose unconventional AHE can not be understood in terms of the spin chirality mechanism.

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preprint2013arXiv

Spin-Chiral Bulk Fermi Surfaces of BiTeI Proven by Quantum Oscillations

We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic fields, we find a substantial Zeeman effect with an effective g-factor of ~ 60 for the Rashba-split Fermi surfaces. These findings provide clear evidence of strong Rashba and Zeeman coupling in the bulk states of BiTeI, suggesting that BiTeI is a good platform hosting the spin-polarized chiral states.

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preprint2012arXiv

Breakdown of the interlayer coherence in twisted bilayer graphene

Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when the interlayer coupling is significantly reduced by e.g. large interlayer separation. We report that complete suppression of coherent conduction is realized even in an atomic length scale of layer separation in twisted bilayer graphene. The interlayer resistivity of twisted bilayer graphene is much higher than the c-axis resistivity of Bernal-stacked graphite, and exhibits strong dependence on temperature as well as on external electric fields. These results suggest that the graphene layers are significantly decoupled by rotation and incoherent conduction is a main transport channel between the layers of twisted bilayer graphene.

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preprint2012arXiv

Gate-tuned Differentiation of Surface-conducting States in Bi1.5Sb0.5Te1.7Se1.3 Topological-insulator Thin Crystals

Using field-angle, temperature, and back-gate-voltage dependence of the weak anti-localization (WAL) and universal conductance fluctuations of thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in combination with gate-tuned Hall resistivity measurements, we reliably separated the surface conduction of the topological nature from both the bulk conduction and topologically trivial surface conduction. We minimized the bulk conduction in the crystals and back-gate tuned the Fermi level to the topological bottom-surface band while keeping the top surface insensitive to back-gating with the optimal crystal thickness of ~?100 nm. We argue that the WAL effect occurring by the coherent diffusive motion of carriers in relatively low magnetic fields is more essential than other transport tools such as the Shubnikov-de Hass oscillations for confirming the conduction by the topologically protected surface state. Our approach provides a highly coherent picture of the surface transport properties of TIs and a reliable means of investigating the fundamental topological nature of surface conduction and possible quantum-device applications related to momentum-locked spin polarization in surface states.

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preprint2011arXiv

Ballistic transport of graphene pnp junctions with embedded local gates

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a 130-nm-wide local gate, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very distinctive from top-gated devices. It was caused as the electric field arising from the global back gate is strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

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preprint2011arXiv

Nodal superconductivity in Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$ induced by isovalent Ru substitution

We present the ultra-low-temperature heat transport study of an iron-based superconductor Ba(Fe$_{0.64}$Ru$_{0.36}$)$_2$As$_2$ ($T_c$ = 20.2 K), in which the superconductivity is induced by isovalent Ru substitution. In zero field we find a large residual linear term $κ_0/T$, more than 40% of the normal-state value. At low field, the $κ_0/T$ shows an $H^{1/2}$ dependence. These provide strong evidences for nodes in the superconducting gap of Ba(Fe$_{0.64}$Ru$_{0.36}$)$_2$As$_2$, which mimics that in another isovalently substituted superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$. Our results show that the isovalent Ru substitution can also induce nodal superconductivity in BaFe$_2$As$_2$, as P does, and they may have the same origin. We further compare them with other two nodal superconductors LaFePO and LiFeP.

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preprint2011arXiv

Robust nodal superconductivity induced by isovalent doping in Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$ and BaFe$_2$(As$_{1-x}$P$_x$)$_2$

We present the ultra-low-temperature heat transport study of iron-based superconductors Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$ and BaFe$_2$(As$_{1-x}$P$_x$)$_2$. For optimally doped Ba(Fe$_{0.64}$Ru$_{0.36}$)$_2$As$_2$, a large residual linear term $κ_0/T$ at zero field and a $\sqrt{H}$ dependence of $κ_0(H)/T$ are observed, which provide strong evidences for nodes in the superconducting gap. This result demonstrates that the isovalent Ru doping can also induce nodal superconductivity, as P does in BaFe$_2$(As$_{0.67}$P$_{0.33}$)$_2$. Furthermore, in underdoped Ba(Fe$_{0.77}$Ru$_{0.23}$)$_2$As$_2$ and heavily underdoped BaFe$_2$(As$_{0.82}$P$_{0.18}$)$_2$, $κ_0/T$ manifests similar nodal behavior, which shows the robustness of nodal superconductivity in the underdoped regime and puts constraint on theoretical models.

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preprint2010arXiv

Nearly isotropic upper critical fields in a SrFe$_{1.85}$Co$_{0.15}$As$_{2}$ single crystal

We study temperature dependent upper critical field $H_{\rm c2}$ of a SrFe$_{1.85}$Co$_{0.15}$As$_{2}$ single crystal (\textit{T$_c$}=20.2 K) along \textit{ab}-plane and \textit{c}-axis through resistivity measurements up to 50 T. For the both crystalline directions, $H_{\rm c2}$ becomes nearly isotropic at zero temperature limit, reaching $\sim$ 48 T. The temperature dependence of the $H_{\rm c2}$ curves is explained by interplay between orbital and Pauli limiting behaviors combined with the two band effects.

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preprint2009arXiv

Two-gap and paramagnetic pair-breaking effects on upper critical field of SmFeAsO$_{0.85}$ and SmFeAsO$_{0.8}$F$_{0.2}$ single crystals

We investigated the temperature dependence of the upper critical field [$H_{c2}(T)$] of fluorine-free SmFeAsO$_{0.85}$ and fluorine-doped SmFeAsO$_{0.8}$F$_{0.2}$ single crystals by measuring the resistive transition in low static magnetic fields and in pulsed fields up to 60 T. Both crystals show that $H_{c2}(T)$'s along the c axis [$H_{c2}^c(T)$] and in an $ab$-planar direction [$H_{c2}^{ab}(T)$] exhibit a linear and a sublinear increase, respectively, with decreasing temperature below the superconducting transition. $H_{c2}(T)$'s in both directions deviate from the conventional one-gap Werthamer-Helfand-Hohenberg theoretical prediction at low temperatures. A two-gap nature and the paramagnetic pair-breaking effect are shown to be responsible for the temperature-dependent behavior of $H_{c2}^c$ and $H_{c2}^{ab}$, respectively.

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