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Researcher profile

Seung-Hoon Jhi

Seung-Hoon Jhi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

6 published item(s)

preprint2022arXiv

Lattice dynamical properties of antiferromagnetic oxides calculated using self-consistent extended Hubbard functional method

We study the lattice dynamics of antiferromagnetic transition-metal oxides by using self-consistent Hubbard functionals. We calculate the ground states of the oxides with the on-site and intersite Hubbard interactions determined self-consistently within the framework of density functional theory. The on-site and intersite Hubbard terms fix the errors associated with the electron self-interaction in the local and semilocal functionals. Inclusion of the intersite Hubbard terms in addition to the on-site Hubbard terms produces accurate phonon dispersion of the transition-metal oxides. Calculated Born effective charges and high-frequency dielectric constants are in good agreement with experiment. Our study provides a computationally inexpensive and accurate set of first-principles calculations for strongly-correlated materials and related phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electronic topological transition in sliding bilayer graphene

We demonstrate theoretically that the topology of energy bands and Fermi surface in bilayer graphene undergoes a very sensitive transition when extremely tiny lateral interlayer shift occurs in arbitrary directions. The phenomenon originates from a generation of effective non-Abelian vector potential in Dirac Hamiltonian by the sliding motions. The characteristics of the transition such as pair annihilations of massless Dirac fermions are dictated by the sliding direction owing to a unique interplay between the effective non-Abelian gauge fields and Berry's phases associated with massless electrons. The transition manifests itself in various measurable quantities such as anomalous density of states, minimal conductivity, and distinct Landau level spectrum.

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preprint2011arXiv

The stability of graphene band structures against an external periodic perturbation; Na on Graphene

We report that the $π$ band of graphene sensitively changes as a function of an external potential induced by Na especially when the potential becomes periodic at low temperature. We have measured the band structures from the graphene layers formed on the 6H-SiC(0001) substrate using angle-resolved photoemission spectroscopy with synchrotron photons. With increasing Na dose, the $π$ band appears to be quickly diffused into background at 85 K whereas it becomes significantly enhanced its spectral intensity at room temperature (RT). A new parabolic band centered at $k\sim$1.15 Å$^{-1}$ also forms near Fermi energy with Na at 85 K while no such a band observed at RT. Such changes in the band structure are found to be reversible with temperature. Analysis based on our first principles calculations suggests that the changes of the $π$ band of graphene be mainly driven by the Na-induced potential especially at low temperature where the potential becomes periodic due to the crystallized Na overlayer. The new parabolic band turns to be the $π$ band of the underlying buffer layer partially filled by the charge transfer from Na adatoms. The five orders of magnitude increased hopping rate of Na adatoms at RT preventing such a charge transfer explains the absence of the new band at RT.

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preprint2010arXiv

Controlling Energy Gap of Bilayer Graphene by Strain

Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to the two layers. It is shown that the size of energy gap can be simply controlled by adjusting the strength and direction of these strains. We also show that the effect originates from the occurrence of strain-induced pseudo-scalar potentials in graphene. When homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap. The results demonstrate a simple mechanical method of realizing pseudo-electromagnetism in graphene and suggest a maneuverable approach to fabrication of electromechanical devices based on bilayer graphene.

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preprint2010arXiv

Effects of Strain on Electronic Properties of Graphene

We present first-principles calculations of electronic properties of graphene under uniaxial and isotropic strains, respectively. The semi-metallic nature is shown to persist up to a very large uniaxial strain of 30% except a very narrow strain range where a tiny energy gap opens. As the uniaxial strain increases along a certain direction, the Fermi velocity parallel to it decreases quickly and vanishes eventually, whereas the Fermi velocity perpendicular to it increases by as much as 25%. Thus, the low energy properties with small uniaxial strains can be described by the generalized Weyl's equation while massless and massive electrons coexist with large ones. The work function is also predicted to increase substantially as both the uniaxial and isotropic strain increases. Hence, the homogeneous strain in graphene can be regarded as the effective electronic scalar potential.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Topological insulating behaviour in conducting property of crystalline Ge-Sb-Te

We report a discovery, through first-principles calculations, that crystalline Ge-Sb-Te (GST) phase-change materials exhibit the topological insulating property. Our calculations show that the materials become topological insulator or develop conducting surface-like interface states depending on the layer stacking sequence. It is shown that the conducting interface states originate from topological insulating Sb2Te3 layers in GSTs and can be crucial to the electronic property of the compounds. These interface states are found to be quite resilient to atomic disorders but sensitive to the uniaxial strains. We presented the mechanisms that destroy the topological insulating order in GSTs and investigated the role of Ge migration that is believed to be responsible for the amorphorization of GSTs.

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