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Joonbum Park

Joonbum Park appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.app-ph

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Published work

11 published item(s)

preprint2020arXiv

Rigid platform for applying large tunable strains to mechanically delicate samples

Response to uniaxial stress has become a major probe of electronic materials. Tuneable uniaxial stress may be applied using piezoelectric actuators, and so far two methods have been developed to couple samples to actuators. In one, actuators apply force along the length of a free, beam-like sample, allowing very large strains to be achieved. In the other, samples are affixed directly to piezoelectric actuators, allowing study of mechanically delicate materials. Here, we describe an approach that merges the two: thin samples are affixed to a substrate, that is then pressurized uniaxially using piezoelectric actuators. Using this approach, we demonstrate application of large elastic strains to mechanically delicate samples: the van der Waals-bonded material FeSe, and a sample of CeAuSb$_2$ that was shaped with a focused ion beam.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Split superconducting and time-reversal symmetry-breaking transitions, and magnetic order in Sr$_2$RuO$_4$ under uniaxial stress

Among unconventional superconductors, Sr$_2$RuO$_4$ has become a benchmark for experimentation and theoretical analysis because its normal-state electronic structure is known with exceptional precision, and because of experimental evidence that its superconductivity has, very unusually, a spontaneous angular momentum, i.e. a chiral state. This hypothesis of chirality is however difficult to reconcile with recent evidence on the spin part of the order parameter. Measurements under uniaxial stress offer an ideal way to test for chirality, because under uniaxial stress the superconducting and chiral transitions are predicted to split, allowing the empirical signatures of each to be identified separately. Here, we report zerofield muon spin relaxation (ZF-$μ$SR) measurements on crystals placed under uniaxial stresses of up to 1.05 GPa. We report a clear stress-induced splitting between the onset temperatures of superconductivity and time-reversal symmetry breaking, consistent with qualitative expectations for chiral superconductivity. We also report the appearance of unexpected bulk magnetic order under a uniaxial stress of ~ 1.0 GPa in clean Sr$_2$RuO$_4$.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetic field-tuned quantum criticality in a Kondo insulator

Kondo insulators are predicted to undergo an insulator-to-metal transition under applied magnetic field, yet the extremely high fields required to date have prohibited a comprehensive investigation of the nature of this transition. Here we show that Ce3Bi4Pd3 provides an ideal platform for this investigation, owing to the unusually small magnetic field of B ~ 11 T required to overcome its Kondo insulating gap. Above Bc, we find a magnetic field-induced Fermi liquid state whose characteristic energy scale T_FL collapses near Bc in a manner indicative of a magnetic field-tuned quantum critical point. A direct connection is established with the process of Kondo singlet formation, which yields a broad maximum in the magnetic susceptibility as a function of temperature in weak magnetic fields that evolves progressively into a sharper transition at Bc as T -> 0.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Topological phase transition and quantum spin Hall edge states of antimony few layers

While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface

We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$Se$_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi$_2$Se$_3$ interface, which would be useful for implementing an electric contact with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se

The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Transforming a Surface State of Topological Insulator by a Bi Capping Layer

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Microscopic mechanism for asymmetric charge distribution in Rashba-type surface states and the origin of the the energy splitting scale

Microscopic mechanism for the Rashba-type band splitting is examined in detail. We show how asymmetric charge distribution is formed when local orbital angular momentum (OAM) and crystal momentum get interlocked due to surface effects. An electrostatic energy term in the Hamiltonian appears when such OAM and crystal momentum dependent asymmetric charge distribution is placed in an electric field produced from an inversion symmetry breaking (ISB). Analysis by using an effective Hamiltonian shows that, as the atomic spin-orbit coupling (SOC) strength increases from weak to strong, originally OAM-quenched states evolve into well-defined chiral OAM states and then to total angular momentum J-states. In addition, the energy scale of the band splitting changes from atomic SOC energy to electrostatic energy. To confirm the validity of the model, we study OAM and spin structures of Au(111) system by using an effective Hamiltonian for the d-orbitals case. As for strong SOC regime, we choose Bi2Te2Se as a prototype system. We performed circular dichroism angle resolved photoemission spectroscopy experiments as well as first-principles calculations. We find that the effective model can explain various aspects of spin and OAM structures of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-Chiral Bulk Fermi Surfaces of BiTeI Proven by Quantum Oscillations

We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic fields, we find a substantial Zeeman effect with an effective g-factor of ~ 60 for the Rashba-split Fermi surfaces. These findings provide clear evidence of strong Rashba and Zeeman coupling in the bulk states of BiTeI, suggesting that BiTeI is a good platform hosting the spin-polarized chiral states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate-tuned Differentiation of Surface-conducting States in Bi1.5Sb0.5Te1.7Se1.3 Topological-insulator Thin Crystals

Using field-angle, temperature, and back-gate-voltage dependence of the weak anti-localization (WAL) and universal conductance fluctuations of thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in combination with gate-tuned Hall resistivity measurements, we reliably separated the surface conduction of the topological nature from both the bulk conduction and topologically trivial surface conduction. We minimized the bulk conduction in the crystals and back-gate tuned the Fermi level to the topological bottom-surface band while keeping the top surface insensitive to back-gating with the optimal crystal thickness of ~?100 nm. We argue that the WAL effect occurring by the coherent diffusive motion of carriers in relatively low magnetic fields is more essential than other transport tools such as the Shubnikov-de Hass oscillations for confirming the conduction by the topologically protected surface state. Our approach provides a highly coherent picture of the surface transport properties of TIs and a reliable means of investigating the fundamental topological nature of surface conduction and possible quantum-device applications related to momentum-locked spin polarization in surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anisotropic Dirac fermions in a Bi square net of SrMnBi2

We report the highly anisotropic Dirac fermions in a Bi square net of SrMnBi2, based on a first principle calculation, angle resolved photoemission spectroscopy, and quantum oscillations for high-quality single crystals. We found that the Dirac dispersion is generally induced in the (SrBi)+ layer containing a double-sized Bi square net. In contrast to the commonly observed isotropic Dirac cone, the Dirac cone in SrMnBi2 is highly anisotropic with a large momentum-dependent disparity of Fermi velocities of ~ 8. These findings demonstrate that a Bi square net, a common building block of various layered pnictides, provide a new platform that hosts highly anisotropic Dirac fermions.

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