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Researcher profile

Kaiwen Sun

Kaiwen Sun contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
hep-thcond-mat.str-elmath-phmath.MPmath.NTcond-mat.mes-hallmath.GRmath.QAphysics.optics

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Published work

7 published item(s)

preprint2022arXiv

Blowup Equations and Holomorphic Anomaly Equations

Blowup equations and holomorphic anomaly equations are two universal yet completely different approaches to solve refined topological string theory on local Calabi-Yau threefolds corresponding to A- and B-model respectively. The former originated from comparing Nekrasov partition functions of 4d $\mathcal{N}=2$ gauge theories on $Ω$ defomed spacetime $\mathbb{C}^2_{ε_1,ε_2}$ and its one-point blown-up, while the latter takes root in the degeneration of wordsheet Riemann surfaces. The relation between the two approaches is an open question. In this short note, we find a novel recursive equation governing their consistency, which we call the consistency equation. This new equation computes the modular anomaly of blowup equations order by order. The consistency equation also suggests a non-holomorphic extension of blowup equations.

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preprint2022arXiv

Conway invariant Jacobi forms on the Leech lattice

In this paper we study Jacobi forms associated with the Leech lattice $Λ$ which are invariant under the Conway group $\mathrm{Co}_0$. We determine and construct generators of modules of both weak and holomorphic Jacobi forms of integral weight and fixed index $t\leq 3$. As applications, (1) we find the modular linear differential equations satisfied by the holomorphic generators; (2) we determine the decomposition of many products of orbits of Leech vectors; (3) we calculate the intersection between orbits and Leech vectors; (4) we derive some conjugate relations among orbits modulo $tΛ$.

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preprint2022arXiv

Semiconductor-like photocarrier dynamics in Dirac Semimetal Cd3As2 film Probed with transient Terahertz Spectroscopy

The topological three-dimensional Dirac semimetal Cd3As2 has drawn great attention for the novel physics and promising applications in optoelectronic devices operating in the infrared and THz regimes. Among the extensive studies in the past decades, one intriguing debate is the underlined mechanism that governing the nonequilibrium carrier dynamics following photoexcitation. In this study, the temperature dependent photocarrier dynamics in Cd3As2 film has been investigated with time-resolved terahertz spectroscopy. The experimental results demonstrate that photoexcitation results in abrupt increase in THz photoconductivity, and the subsequent relaxation shows a single exponential relaxation for various temperatures and pump fluences. The relaxation time increase from 4.7 ps at 5 K to 7.5 ps at 220 K, while the lifetime remains almost constant of ~7.5 ps with temperature above 220 K. A Rothwarf-Taylor model was employed to fit the temperature dependent relaxation time, and a narrow energy gap of ~35 meV is obtained, which occurs around the Dirac node. Our THz spectroscopy results demonstrate that the photocarrier relaxation in Cd3As2 shows a semiconductor-like behavior, rather than hot carrier scatterings in graphene and most of metals.

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preprint2022arXiv

Ultrafast Dynamics of Defect-Assisted Auger process in PdSe2 films: Synergistic Interaction Between Defect Trapping and Auger Effect

Strong Coulomb interactions in two-dimensional systems, together with quantum confinement, make many-body processes particularly effective for carrier dynamics, which plays a crucial role in determining carrier lifetime, photoconductivity, and emission yield of the materials. Hereby, by using optical pump and terahertz probe spectroscopy, we have investigated the photocarrier dynamics in the PdSe2 films with different thickness. The experimental results reveal that the photocarrier relaxation consists of two components: a fast component of 2.5 ps that shows the layer-thickness independence, and a slow component has typical lifetime of 7.3 ps decreasing with the layer thickness. Surprisingly, the relaxation times for both fast and slow components are exhibited both pump fluence and temperature independence, which suggests that synergistic interactions between defect trapping and Auger effect dominate the photocarrier dynamics in PdSe2 films. A model involving defect-assisted Auger process is proposed, which can reproduce the experimental results well. The fitting results reveal that the layer dependent lifetime is determined by the defect density rather than carrier occupancy rate after photoexcitation. Our results underscore the interplay between Auger process and defects in two-dimensional semiconductors.

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preprint2022arXiv

Weyl invariant $E_8$ Jacobi forms and $E$-strings

In 1992 Wirthmüller showed that for any irreducible root system not of type $E_8$ the ring of weak Jacobi forms invariant under Weyl group is a polynomial algebra. However, it has recently been proved that for $E_8$ the ring is not a polynomial algebra. Weyl invariant $E_8$ Jacobi forms have many applications in string theory and it is an open problem to describe such forms. The scaled refined free energies of $E$-strings with certain $η$-function factors are conjectured to be Weyl invariant $E_8$ quasi holomorphic Jacobi forms. It is further observed that the scaled refined free energies up to some powers of $E_4$ can be written as polynomials in nine Sakai's $E_8$ Jacobi forms and Eisenstein series $E_2$, $E_4$, $E_6$. Motivated by the physical conjectures, we prove that for any Weyl invariant $E_8$ Jacobi form $ϕ_t$ of index $t$ the function $E_4^{[t/5]}Δ^{[5t/6]}ϕ_t$ can be expressed uniquely as a polynomial in $E_4$, $E_6$ and Sakai's forms, where $[x]$ is the integer part of $x$. This means that a Weyl invariant $E_8$ Jacobi form is completely determined by a solution of some linear equations. By solving the linear systems, we determine the generators of the free module of Weyl invariant $E_8$ weak (resp. holomorphic) Jacobi forms of given index $t$ when $t\leq 13$ (resp. $t\leq 11$).

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preprint2019arXiv

Elliptic Blowup Equations for 6d SCFTs. II: Exceptional Cases

The building blocks of 6d $(1,0)$ SCFTs include certain rank one theories with gauge group $G=SU(3),SO(8),F_4,E_{6,7,8}$. In this paper, we propose a universal recursion formula for the elliptic genera of all such theories. This formula is solved from the elliptic blowup equations introduced in our previous paper. We explicitly compute the elliptic genera and refined BPS invariants, which recover all previous results from topological string theory, modular bootstrap, Hilbert series, 2d quiver gauge theories and 4d $\mathcal{N}=2$ superconformal $H_{G}$ theories. We also observe an intriguing relation between the $k$-string elliptic genus and the Schur indices of rank $k$ $H_{G}$ SCFTs, as a generalization of Lockhart-Zotto's conjecture at the rank one cases. In a subsequent paper, we deal with all other non-Higgsable clusters with matters.

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preprint2019arXiv

Elliptic Blowup Equations for 6d SCFTs. III: E-strings, M-strings and Chains

We establish the elliptic blowup equations for E-strings and M-strings and solve elliptic genera and refined BPS invariants from them. Such elliptic blowup equations can be derived from a path integral interpretation. We provide toric hypersurface construction for the Calabi-Yau geometries of M-strings and those of E-strings with up to three mass parameters turned on, as well as an approach to derive the perturbative prepotential directly from the local description of the Calabi-Yau threefolds. We also demonstrate how to systematically obtain blowup equations for all rank one 5d SCFTs from E-string by blow-down operations. Finally, we present blowup equations for E-M and M string chains.

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