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Source author record

Jan Suffczyński

Jan Suffczyński appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.opticsquant-ph

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Published work

7 published item(s)

preprint2022arXiv

Neural networks based on ultrafast time-delayed effects in exciton-polaritons

We demonstrate that time-delayed nonlinear effects in exciton-polaritons can be used to construct neural networks where information is coded in optical pulses arriving consecutively on the sample. The highly nonlinear effects are induced by time-dependent interactions with the excitonic reservoir. These nonlinearities allow to create a nonlinear XOR logic gate that can perform operations on the picosecond timescale. An optoelectronic neural network based on the constructed logic gate performs classification of spoken digits with a high accuracy rate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetoelastic interaction in the two-dimensional magnetic material MnPS$_3$ studied by first principles calculations and Raman experiments

We report experimental and theoretical studies on the magnetoelastic interactions in MnPS$_3$. Raman scattering response measured as a function of temperature shows a blue shift of the Raman active modes at 120.2 and 155.1 cm$^{-1}$, when the temperature is raised across the antiferromagnetic-paramagnetic transition. Density functional theory (DFT) calculations have been performed to estimate the effective exchange interactions and calculate the Raman active phonon modes. The calculations lead to the conclusion that the peculiar behavior with temperature of the two low energy phonon modes can be explained by the symmetry of their corresponding normal coordinates which involve the virtual modification of the super-exchange angles associated with the leading antiferromagnetic (AFM) interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) Quantum Dots

Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of emission lines achieved by implementation of a Mn-assisted epitaxial growth. We find an unusually large variation of exciton-biexciton energy difference (3 meV $\leq$ $Δ\mathrm{E_{X-XX}}$ $\leq$ 26 meV) and of exciton radiative recombination rate in the statistics of QDs. We observe a strong correlation between the exciton-biexciton energy difference, exciton recombination rate, splitting between dark and bright exciton, and additionally the exciton fine structure splitting $δ_1$ and Landé factor. Above results indicate that values of the $δ_1$ and of the Landé factor in the studied QDs are dictated primarily by the electron and hole respective spatial shift and wavefunctions overlap, which vary from dot to dot due to a different degree of localization of electrons and holes in, respectively, CdSe and CdTe rich QD regions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Influence of ZnTe based distributed Bragg reflectors on the yellow range luminescence of self assembled CdTe QDs

The influence of a distributed Bragg reflector composed of ZnTe, MgTe, and MgSe superlattices on photoluminescence of self assembled CdTe quantum dots (QD) emitting in the yellow spectral range is investigated. In the case of QDs grown on a distributed Bragg reflector the photoluminescence intensity is enhanced by more than one order of magnitude, whereas the single QD lines are broadened as compared to the case of QDs grown on a ZnTe buffer. Structural and chemical analysis reveal an unintentional formation of a thin ZnSe layer induced by the growth interruption needed for the deposition of the QDs sheet. Sharp emission lines from individual quantum dots are recovered in the case of a thicker ZnTe layer grown prior to the QDs. This indicates that growth interruptions might be responsible for the QD emission line broadening.

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preprint2013arXiv

Frequency cavity pulling induced by a single semiconductor quantum dot

We investigate the emission properties of a single semiconductor quantum dot deterministically coupled to a confined optical mode in the weak coupling regime. A strong pulling, broadening and narrowing of the cavity mode emission is evidenced when changing the spectral detuning between the emitter and the cavity. These features are theoretically accounted for by considering the phonon assisted emission of the quantum dot transition. These observations highlight a new situation for cavity quantum electrodynamics involving spectrally broad emitters.

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preprint2013arXiv

Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN

Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codoping of GaN:Mn with Mg allows to control the Mn$^{n+}$ charge and spin state in the range $3\le n\le 5$ and $2\ge S\ge 1$. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg$_k$, where the number of ligands $k$ is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Modification of emission properties of ZnO layers due to plasmonic near-field coupling to Ag nanoislands

A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found to be an important factor governing plasmonic modification of optical response of ZnO films. The presence of the Ag nanoislands of appropriate dimensions causes a strong (threefold) increase in emission intensity and up to 1.5 times faster recombination. The experimental results are successfully described by model calculations within the Mie theory.

0 citations0 reviewsNo code linkedOpen access