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Andrzej Golnik

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cond-mat.mes-hall physics.optics

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preprint2016arXiv

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) Quantum Dots

Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of emission lines achieved by implementation of a Mn-assisted epitaxial growth. We find an unusually large variation of exciton-biexciton energy difference (3 meV $\leq$ $Δ\mathrm{E_{X-XX}}$ $\leq$ 26 meV) and of exciton radiative recombination rate in the statistics of QDs. We observe a strong correlation between the exciton-biexciton energy difference, exciton recombination rate, splitting between dark and bright exciton, and additionally the exciton fine structure splitting $δ_1$ and Landé factor. Above results indicate that values of the $δ_1$ and of the Landé factor in the studied QDs are dictated primarily by the electron and hole respective spatial shift and wavefunctions overlap, which vary from dot to dot due to a different degree of localization of electrons and holes in, respectively, CdSe and CdTe rich QD regions.

preprint2014arXiv

Influence of ZnTe based distributed Bragg reflectors on the yellow range luminescence of self assembled CdTe QDs

The influence of a distributed Bragg reflector composed of ZnTe, MgTe, and MgSe superlattices on photoluminescence of self assembled CdTe quantum dots (QD) emitting in the yellow spectral range is investigated. In the case of QDs grown on a distributed Bragg reflector the photoluminescence intensity is enhanced by more than one order of magnitude, whereas the single QD lines are broadened as compared to the case of QDs grown on a ZnTe buffer. Structural and chemical analysis reveal an unintentional formation of a thin ZnSe layer induced by the growth interruption needed for the deposition of the QDs sheet. Sharp emission lines from individual quantum dots are recovered in the case of a thicker ZnTe layer grown prior to the QDs. This indicates that growth interruptions might be responsible for the QD emission line broadening.

preprint2013arXiv

In-plane radiative recombination channel of a dark exciton in self-assembled quantum dots

We demonstrate evidence for a radiative recombination channel of dark excitons in self-assembled quantum dots. This channel is due to a light hole admixture in the excitonic ground state. Its presence was experimentally confirmed by a direct observation of the dark exciton photoluminescence from a cleaved edge of the sample. The polarization resolved measurements revealed that a photon created from the dark exciton recombination is emitted only in the direction perpendicular to the growth axis. Strong correlation between the dark exciton lifetime and the in-plane hole g-factor enabled us to show that the radiative recombination is a dominant decay channel of the dark excitons in CdTe/ZnTe quantum dots.

preprint2012arXiv

Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities

The coupling of CdTe/ZnTe quantum dot (QD) emission to micropillar cavity eigenmodes in the weak coupling regime is demonstrated. We analyze photoluminescence spectra of QDs embedded in monolithic micropillar cavities based on Bragg mirrors which contain MgSe/ZnTe/MgTe superlattices as low-index material. The pillar emission shows pronounced cavity eigenmodes and their spectral shape is in good agreement with simulations. QD emission in resonance with the cavity mode is shown to be efficiently guided toward the detector and an experimental Purcell enhancement by a factor of 5.7 is determined, confirming theoretical expectations.

preprint2011arXiv

Inter-shell exchange interaction in CdTe/ZnTe quantum dots: magneto-photoluminescence of X, X2- and XX-

We present a comprehensive photoluminescence study of exchange interaction in self-assembled CdTe/ZnTe quantum dots. We exploit the presence of multiple charge states in the photoluminescence spectra of single quantum dots to analyze simultaneously fine structure of different excitonic transitions, including recombination of neutral exciton/biexciton, doubly charged negative exciton and negatively charged biexciton. We demonstrate that the fine structure results from electron-hole exchange interaction and that spin Hamiltonians with effective exchange constants $δ_i$ can provide a good description of each transition in magnetic field for Faraday and Voigt field geometry. We determine and discuss values of the effective exchange constants for a large statistics of quantum dots.

preprint2010arXiv

Magnetic polaron formation and exciton spin relaxation in single CdMnTe quantum dots

We study the formation dynamics of a spontaneous ferromagnetic order in single self-assembled CdMnTe quantum dots. By measuring time-resolved photoluminescence, we determine the formation times for QDs with Mn ion contents x varying from 0.01 to 0.2. At low x these times are orders of magnitude longer than exciton spin relaxation times evaluated from the decay of photoluminescence circular polarization. This allows us to conclude that the direction of the spontaneous magnetization is determined by a momentary Mn spin fluctuation rather than resulting from an optical orientation. At higher x, the formation times are of the same order of magnitude as found in previous studies on higher dimensional systems. We also find that the exciton spin relaxation accelerates with increasing Mn concentration.

preprint2009arXiv

Picosecond charge variation of quantum dots under pulsed excitation

We present a spectroscopic study of excitation dynamics in self assembled CdTe/ZnTe quantum dots. Insight into details of kinetics is obtained from the time resolved micro-photoluminescence, single photon correlation and subpicosecond excitation correlation measurements done on single quantum dots. It is shown that the pulsed excitation in energy above the energy gap of the barrier material results in separate capture of electrons and holes. The capture of carriers of different charge take place at different delay from excitation.