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Researcher profile

Tomasz Dietl

Tomasz Dietl contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

13 published item(s)

preprint2022arXiv

Superexchange dominates in magnetic topological insulators

It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (the Bloembergen-Rowland mechanism) leads to antiferromagnetic coupling between pairs of localized spins. Here, we critically revisit these two approaches, show their shortcomings, and elucidate why the magnitude of the interband contribution is small even in topological systems. From the proposed theoretical approach and our computational studies of magnetism in Mn-doped HgTe and CdTe, we conclude that, in the absence of band carriers, the superexchange dominates, and its sign depends on the coordination and charge state of magnetic impurities rather than on the topological class of the host material.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring doping, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN

Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codoping of GaN:Mn with Mg allows to control the Mn$^{n+}$ charge and spin state in the range $3\le n\le 5$ and $2\ge S\ge 1$. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg$_k$, where the number of ligands $k$ is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Modification of emission properties of ZnO layers due to plasmonic near-field coupling to Ag nanoislands

A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found to be an important factor governing plasmonic modification of optical response of ZnO films. The presence of the Ag nanoislands of appropriate dimensions causes a strong (threefold) increase in emission intensity and up to 1.5 times faster recombination. The experimental results are successfully described by model calculations within the Mie theory.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A story of high-temperature ferromagnetism in semiconductors

The comprehensive search for multifunctional materials has resulted in the discovery of semiconductors and oxides showing ferromagnetic features persisting to room temperature. In this tutorial review the methods of synthesis of these materials, as well as the application of element-specific nano-analytic tools, particularly involving synchrotron radiation and electron microscopy, are described and shown to reveal the presence of nano-scale phase separations. Various means to control the aggregation of magnetic cations are discussed together with the mechanisms accounting for ferromagnetism of either condensed or diluted magnetic semiconductors. Finally, the question of whether high temperature ferromagnetism is possible in semiconductors not containing magnetic ions is touched upon.

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preprint2011arXiv

Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system

Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Reconciling results of tunnelling experiments on (Ga,Mn)As

A theoretical model is presented which allows to reconcile findings of scanning tunnelling spectroscopy for (Ga,Mn)As [Richardella et al. Science 327, 66 (2010)] with results for tunneling across (Ga,Mn)As thin layers [Ohya et al. Nature Phys. 7, 342 (2011); Phys. Rev. Lett. 104, 167204 (2010)]. According to the proposed model, supported by a self-consistent solution of the Poisson and Schroedinger equations, a nonmonotonic behaviour of differential tunnel conductance as a function of bias is associated with the appearance of two-dimensional hole subbands rather in the GaAs:Be electrode than in the (Ga,Mn)As layer.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Structural and paramagnetic properties of dilute Ga1-xMnxN

Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effect of inversion asymmetry on the intrinsic anomalous Hall effect in ferromagnetic (Ga,Mn)As

The relativistic nature of the electron motion underlies the intrinsic part of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As. In this paper, we concentrate on the crystal band structure as an important facet to the description of this phenomenon. Using different k.p and tight-binding computational schemes, we capture the strong effect of the bulk inversion asymmetry on the Berry curvature and the anomalous Hall conductivity. At the same time, we find it not to affect other important characteristics of (Ga,Mn)As, namely the Curie temperature and uniaxial anisotropy fields. Our results extend the established theories of the anomalous Hall effect in ferromagnetic semiconductors and shed new light on its puzzling nature.

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preprint2010arXiv

Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs

The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and uniaxial anisotropy constants is found to be proportional to the fourth and second power of saturation magnetization, respectively. Similarly to the case of (001) samples, the spin reorientation transition from uniaxial anisotropy with the easy along the [-1, 1, 0] direction at high temperatures to the biaxial <100> anisotropy at low temperatures is observed around 25 K. The determined values of the anisotropy constants have been confirmed by FMR studies. As evidenced by investigations of the polar magnetooptical Kerr effect, the particular combination of magnetic anisotropies allows the out-of-plane component of magnetization to be reversed by an in-plane magnetic field. Theoretical calculations within the p-d Zener model explain the magnitude of the out-of-plane uniaxial anisotropy constant caused by epitaxial strain, but do not explain satisfactorily the cubic anisotropy constant. At the same time the findings point to the presence of an additional uniaxial anisotropy of unknown origin. Similarly to the case of (001) films, this additional anisotropy can be explained by assuming the existence of a shear strain. However, in contrast to the (001) samples, this additional strain has an out-of-the-(001)-plane character.

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preprint2010arXiv

Theory of spin waves in ferromagnetic (Ga,Mn)As

The collective behavior of spins in a dilute magnetic semiconductor is determined by their mutual interactions and influenced by the underlying crystal structure. Hence, we begin with the atomic quantum-mechanical description of this system using the proposed variational-perturbation calculus, and then turn to the emerging macroscopic picture employing phenomenological constants. Within this framework we study spin waves and exchange stiffness in the p-d Zener model of (Ga,Mn)As, its thin layers and bulk crystals described by the spds* tight-binding approximation. Analyzing the anisotropic part of exchange, we find that the Dzyaloshinskii-Moriya interaction may lead to the cycloidal spin arrangement and uniaxial in-plane anisotropy in thin layers, resulting in a surface-like anisotropy in thicker films. We also derive and discuss the spin-wave contribution to magnetization and Curie temperature. Our theory reconstructs the values of stiffness determined from the temperature dependence of magnetization, but reproduces only partly those obtained from analyzing precession modes in (Ga,Mn)As thin films.

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preprint2009arXiv

Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As

The question whether the Anderson-Mott localisation enhances or reduces magnetic correlations is central to the physics of magnetic alloys. Particularly intriguing is the case of (Ga,Mn)As and related magnetic semiconductors, for which diverging theoretical scenarios have been proposed. Here, by direct magnetisation measurements we demonstrate how magnetism evolves when the density of carriers mediating the spin-spin coupling is diminished by the gate electric field in metal/insulator/semiconductor structures of (Ga,Mn)As. Our findings show that the channel depletion results in a monotonic decrease of the Curie temperature, with no evidence for the maximum expected within the impurity-band models. We find that the transition from the ferromagnetic to the paramagnetic state proceeds via the emergence of a superparamagnetic-like spin arrangement. This implies that carrier localisation leads to a phase separation into ferromagnetic and nonmagnetic regions, which we attribute to critical fluctuations in the local density of states, specific to the Anderson-Mott quantum transition.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As

We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we predict the magnitude of the domain-wall resistance without disorder and compare it to experimental values. Next we add disorder to the model and study numerically both small and large disorder regime.

0 citations0 reviewsNo code linkedOpen access