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Researcher profile

J. J. Finley

J. J. Finley contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.optics

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Published work

3 published item(s)

preprint2025arXiv

Unveiling the growth mode diagram of GaSe on sapphire

The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in-situ reflection high-energy electron diffraction (RHEED), in-situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530-650 °C) and Se/Ga flux ratio (5-110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 0.371$\pm$0.001 nm and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials.

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preprint2022arXiv

Moiré straintronics: a universal platform for reconfigurable quantum materials

Large scale two-dimensional (2D) moiré superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moiré pattern, critically determine the emergent properties and phase diagrams. To date, the relative twist angle between two layers has been the primary tuning parameter for a given choice of constituent crystals. Here, we establish strain as a powerful mechanism to in-situ modify the moiré periodicity and symmetry. We develop an analytically exact mathematical description for the moiré lattice under arbitrary in-plane heterostrain acting on any bilayer structure. We demonstrate the ability to fine-tune the moiré lattice near critical points, such as the magic angle in bilayer graphene, or fully reconfigure the moiré lattice symmetry beyond that imposed by the unstrained constituent crystals. Due to this unprecedented simultaneous control over the strength of electronic interactions and lattice symmetry, 2D heterostrain provides a powerful platform to engineer, tune, and probe strongly correlated moiré materials.

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preprint2019arXiv

Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies.

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