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M. Kaniber

M. Kaniber contributes to research discovery and scholarly infrastructure.

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Published work

14 published item(s)

preprint2016arXiv

A few-emitter solid-state multi-exciton laser

We report a combined experimental and theoretical study of non-conventional lasing from higher multi-exciton states of a few quantum dot-photonic crystal nanocavity. We show that the photon output is fed from saturable quantum emitters rather than a non-saturable background despite being rather insensitive to the spectral position of the mode. Although the exciton transitions of each quantum dot are detuned by up to $160$ cavity linewidths, we observe that strong excitation populates a multitude of closely spaced multi-exciton states, which partly overlap spectrally with the mode. The limited number of emitters is confirmed by a complete saturation of the mode intensity at strong pumping, providing sufficient gain to reach stimulated emission, whilst being accompanied by a distinct lasing threshold. Detailed second-order photon-correlation measurements unambiguously identify the transition to lasing for strong pumping and, most remarkably, reveal super-thermal photon bunching with $g^{(2)}(0)>2$ below lasing threshold. Based on our microscopic theory, a pump-rate dependent $β$-factor $β(P)$ is needed to describe the nanolaser and account for the interplay of multi-exciton transitions in the few-emitter gain medium. Moreover, we theoretically predict that the super-thermal bunching is related to dipole-anticorrelated multi-exciton recombination channels via sub- and super-radiant coupling below and above lasing threshold, respectively. Our results provide new insights into the microscopic light-matter-coupling of spatially separated emitters coupled to a common cavity mode and, thus, provides a complete understanding of stimulated emission in nanolasers with discrete emitters.

preprint2015arXiv

Linear and Non-linear Response of Lithographically Defined Plasmonic Nanoantennas

We present numerical studies, nano-fabrication and optical characterization of bowtie nanoantennas demonstrating their superior performance with respect to the electric field enhancement as compared to other Au nanoparticle shapes. For optimized parameters, we found mean intensity enhancement factors >2300x in the feed-gap of the antenna, decreasing to 1300x when introducing a 5nm titanium adhesion layer. Using electron beam lithography we fabricated gold bowties on various substrates with feed-gaps and tip radii as small as 10nm. In polarization resolved measurement we experimentally observed a blue shift of the surface plasmon resonance from 1.72eV to 1.35eV combined with a strong modification of the electric field enhancement in the feed-gap. Under excitation with a 100fs pulsed laser source, we observed non-linear light emission arising from two-photon photoluminescence and second harmonic generation from the gold. The bowtie nanoantenna shows a high potential for outstanding conversion efficiencies and the enhancement of other optical effects which could be exploited in future nanophotonic devices.

preprint2014arXiv

A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

Using integrated superconducting single photon detectors we probe ultra-slow exciton capture and relaxation dynamics in single self-assembled InGaAs quantum dots embedded in a GaAs ridge waveguide. Time-resolved luminescence measurements performed with on- and off-chip detection reveal a continuous decrease in the carrier relaxation time from 1.22 $\pm$ 0.07 ns to 0.10 $\pm$ 0.07 ns upon increasing the number of non-resonantly injected carriers. By comparing off-chip time-resolved spectroscopy with spectrally integrated on-chip measurements we identify the observed dynamics in the rise time ($τ_r$) as arising from a relaxation bottleneck at low excitation levels. From the comparison with the temporal dynamics of the single exciton transition with the on-chip emission signal, we conclude that the relaxation bottleneck is circumvented by the presence of charge carriers occupying states in the bulk material and the two-dimensional wetting layer continuum. A characteristic -2/3 power law dependence of the rise time is observed suggesting Auger-type scattering between carriers trapped in the quantum dot and the two-dimensional wetting layer continuum which circumvents the phonon relaxation bottleneck.

preprint2014arXiv

Optical properties and interparticle coupling of plasmonic bowtie nanoantennas on a semiconducting substrate

We present the simulation, fabrication and optical characterization of plasmonic gold bowtie nanoantennas on a semiconducting GaAs substrate as geometrical parameters such as size, feed gap, height and polarization of the incident light are varied. The surface plasmon resonance was probed using white light reflectivity on an array of nominally identical, 35nm thick Au antennas. To elucidate the influence of the semiconducting, high refractive index substrate, all experiments were compared using nominally identical structures on glass. Besides a linear shift of the surface plasmon resonance from 1.08eV to 1.58eV when decreasing the triangle size from 170nm to 100nm on GaAs, we observed a global redshift by 0.25 +- 0.05eV with respect to nominally identical structures on glass. By performing polarization resolved measurements and comparing results with finite difference time domain simulations, we determined the near field coupling between the two triangles composing the bowtie antenna to be 8x stronger when the antenna is on a glass substrate compared to when it is on a GaAs substrate. The results obtained are of strong relevance for the integration of lithographically defined plasmonic nanoantennas on semiconducting substrates and, therefore, for the development of novel optically active plasmonic-semiconducting nanostructures.

preprint2013arXiv

Emitters of $N$-photon bundles

We propose a scheme based on the coherent excitation of a two-level system in a cavity to generate an ultrabright CW and focused source of quantum light that comes in groups (bundles) of $N$ photons, for an integer $N$ tunable with the frequency of the exciting laser. We define a new quantity, the \emph{purity} of $N$-photon emission, to describe the percentage of photons emitted in bundles, thus bypassing the limitations of Glauber correlation functions. We focus on the case $1\le N\le3$ and show that close to 100% of two-photon emission and 90% of three-photon emission is within reach of state of the art cavity QED samples. The statistics of the bundles emission shows that various regimes---from $N$-photon lasing to $N$-photon guns---can be realized. This is evidenced through generalized correlation functions that extend the standard definitions to the multi-photon level.

preprint2012arXiv

A Waveguide-Coupled On-Chip Single Photon Source

We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are used to prove the single photon character of the emission into the propagating waveguide mode. The results obtained demonstrate that such nanostructures can be used to realize an on-chip, highly directed single photon source with single mode spontaneous emision coupling efficiencies in excess of beta~85 % and the potential to reach maximum emission rates >1 GHz.

preprint2011arXiv

A Correlation between the Emission Intensity of Self-Assembled Germanium Islands and the Quality Factor of Silicon Photonic Crystal Nanocavities

We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are probed to obtain reliable statistics. As the quality factor increases we observe a clear decrease in the average mode emission intensity recorded under comparable optical pumping conditions. This clear experimentally observed trend is compared with simulations based on a dissipative master equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain evidence that reabsorption of photons emitted into the cavity mode is responsible for the observed trend. In combination with the observation of cavity linewidth broadening in power dependent measurements, we conclude that free carrier absorption is the limiting effect for the cavity mediated light enhancement under conditions of strong pumping.

preprint2011arXiv

Direct measurement of plasmon propagation lengths on lithographically defined metallic waveguides on GaAs

We present optical investigations of rectangular surface plasmon polariton waveguides lithographically defined on GaAs substrates. The plasmon propagation length is directly determined using a confocal microscope, with independent polarization control in both excitation and detection channels. Surface plasmon polaritons are launched along the waveguide using a lithographically defined defect at one end. At the remote end of the waveguide they scatter into the far-field, where they are imaged using a CCD camera. By monitoring the length dependence of the intensity of scattered light from the waveguide end, we directly extract the propagation length, obtaining values ranging from LSPP = 10-40 μm depending on the waveguide width (w=2-5 μm) and excitation wavelength (760-920 nm). Results are in good accord with theoretical expectations demonstrating the high quality of the lithographically defined structures. The results obtained are of strong relevance for the development of future semiconductor based integrated plasmonic technologies.

preprint2011arXiv

Electrical control of the exciton-biexciton splitting in a single self-assembled InGaAs quantum dots

We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to theoretical calculations of the relative energies of exciton and biexciton. Cascaded decay from the manifold of single exciton-biexciton states has been predicted to be a new concept to generate entangled photon pairs on demand without the need to suppress the fine structures splitting of the neutral exciton.

preprint2010arXiv

Mutual Coupling of two Semiconductor Quantum Dots via an Optical Nanocavity Mode

We present an experimental and theoretical study of a system consisting of two spatially separated self-assembled InGaAs quantum dots strongly coupled to a single optical nanocavity mode. Due to their different size and compositional profiles, the two quantum dots exhibit markedly different DC Stark shifts. This allows us to tune them into mutual resonance with each other and a photonic crystal nanocavity mode as a bias voltage is varied. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the entire set of emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots via the cavity mode, and the coupling between the two quantum dots when they are detuned from the cavity mode. We suggest that the resulting quantum V-system may be advantageous since dephasing due to incoherent losses from the cavity mode can be avoided.

preprint2010arXiv

Non-resonant feeding of photonic crystal nanocavity modes by quantum dots

We experimentally probe the non-resonant feeding of photons into the optical mode of a two dimensional photonic crystal nanocavity from the discrete emission from a quantum dot. For a strongly coupled system of a single exciton and the cavity mode, we track the detuning-dependent photoluminescence intensity of the polariton peaks at different lattice temperatures. At low temperatures we observe a clear asymmetry in the emission intensity depending on whether the exciton is at higher or lower energy than the cavity mode. At high temperatures this asymmetry vanishes when the probabilities to emit or absorb a phonon become similar. For a different dot-cavity system where the cavity mode is detuned by ΔE>5 meV to lower energy than the single exciton transitions emission from the mode remains correlated with the quantum dot as demonstrated unambiguously by cross-correlation photon counting experiments. By monitoring the temporal evolution of the photoluminescence spectrum, we show that feeding of photons into the mode occurs from multi-exciton transitions. We observe a clear anti-correlation of the mode and single exciton emission; the mode emission quenches as the population in the system reduces towards the single exciton level whilst the intensity of the mode emission tracks the multi-exciton transitions.

preprint2010arXiv

Temporal Monitoring of Non-resonant Feeding of Semiconductor Nanocavity Modes by Quantum Dot Multiexciton Transitions

We experimentally investigate the non-resonant feeding of photons into the optical mode of a zero dimensional nanocavity by quantum dot multiexciton transitions. Power dependent photoluminescence measurements reveal a super-linear power dependence of the mode emission, indicating that the emission stems from multiexcitons. By monitoring the temporal evolution of the photoluminescence spectrum, we observe a clear anticorrelation of the mode and single exciton emission; the mode emission quenches as the population in the system reduces towards the single exciton level whilst the intensity of the mode emission tracks the multi-exciton transitions. Our results lend strong support to a recently proposed mechanism mediating the strongly non-resonant feeding of photons into the cavity mode.

preprint2009arXiv

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is present only in the region where air-holes have been etched during the fabrication process. Detectable emission from the cavity mode persists up to room-temperature, in strong contrast the background emission vanishes for T > 150 K. An Ahrrenius type analysis of the temperature dependence of the luminescence signal recorded either in-resonance with the cavity mode, or weakly detuned, suggests that the higher temperature stability may arise from an enhanced internal quantum efficiency due to the Purcell-effect.

preprint2009arXiv

Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires

The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.