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J. F. Scott

J. F. Scott appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.str-elcond-mat.stat-mech

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Published work

26 published item(s)

preprint2019arXiv

Electrical Studies of Barkhausen Switching Noise in Ferroelectric lead zirconate titanate (PZT) and BaTiO3: Critical Exponents and Temperature-dependence

Previous studies of Barkhausen noise in PZT have been limited to the energy spectrum (slew rate response voltages versus time), showing agreement with avalanche models; in barium titanate other exponents have been measured acoustically, but only at ambient temperatures. In the present study we report the Omori exponent (-0.95$\pm$0.03) for aftershocks in PZT and extend the barium titanate studies to a wider range of temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Giant Magnetoelectric coupling in Single Phase Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ Multiferroics

During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupancy in B site of PZT. This material exhibited a giant ME coupling coefficient ~0.36 mV/cm.Oe. Interestingly, this is the first time any room temperature single phase compound that showed ME trends, and magnitude similar to those in the well established mechanical strain-mediated ferroelectric and ferromagnetic composites; the latter ones are already in the commercial stage as nT/pT magnetic field sensors due to their large ME values. The presence of Pd in PZTP30 has been confirmed by XPS and XRF studies and assigned with related binding energies of Pd+2 and Pd+4 ions as 336.37 eV, 342.9 eV, and 337.53 eV, 343.43 eV, respectively, which may be the origin of room temperature magnetism in Pd substituted PZT ceramics. A sharp first order ferroelectric phase transition was observed at ~569 K (+/-5 K) that is confirmed from dielectric, Raman, and thermal analysis. Both ferromagnetic and ferroelectric orderings with large ME coupling were found above room temperature, a significant step forward in the development of single phase ME material with enhanced functionalities.

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preprint2016arXiv

Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3

We discovered a near room temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositional disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2) which is confirmed by the high resolution transmission electron diffraction pattern. Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulture relation. It shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d33 ~ 233 pm/V) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (Tm). The underlying physics for light-sensitive dielectric dispersion was probed by X-ray photon spectroscopy (XPS) which strongly suggests that mixed valence of bismuth ions, especially Bi5+ ions, are responsible for most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4+ states and sit at the centers of the TiO6 octahedra, which along with asymmetric hybridization between O 2p and Bi 6s orbitals appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.

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preprint2015arXiv

Anomalous change in leakage and displacement currents after electrical poling on lead-free ferroelectric ceramics

We report the polarization, displacement current and leakage current behavior of a trivalent nonpolar cation Al cation substituted lead free ferroelectric NBT-BT electroceramics with tetragonal phase and P4mm space group symmetry. Nearly three orders of magnitude decrease in leakage current were observed under electrical poling, which significantly improves microstructure, polarization, and displacement current. Effective poling neutralizes the domain pinning, traps charges at grain boundaries and fills oxygen vacancies with free charge carriers in matrix, thus saturated macroscopic polarization in contrast to that in upoled samples. E-poling changes bananas type polarization loops to real ferroelectric loops.

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preprint2015arXiv

Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions

Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LMSO with 7 nm polar capping.

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preprint2015arXiv

Folding Catastrophes due to Viscosity in Multiferroic Domains: Implications for Room-Temperature Multiferroic Switching

Unusual domains with curved walls and failure to satisfy the Landau-Lifshitz-Kittel Law are modeled as folding catastrophes (saddle-node bifurcations). This description of ballistic motion in a viscous medium is based upon early work by Dawber et al., Appl. Phys. Lett. 82, 436 (2003). It suggests that ferroelectric films can exhibit folds or vortex patterns but not both.

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preprint2015arXiv

Quantum Critical Point study in Multiferroic Hexaferrites: BaFe12O19, SrFe12O19, and PbFe3Ga9O19 -- Verification of the Khmelnitskii Theory

BaFe12O19 is a popular M-type hexaferrite with T(Neel) = 720 K of enormous commercial value (3 billion dollars/year). It exhibits an incipient ferroelectric phase transition (in violation of the Spaldin-Hill rule) extrapolated to lie at 6.0 K Kelvin but suppressed due to quantum fluctuations (as in SrTiO3). The QCP theory of Khmelnitskii for such uniaxial ferroelectrics predicts that the inverse isothermal electric susceptibility varies as T cubed, in contrast to that for pseudo-cubic materials such as SrTiO3 or KTaO3, a hypothesis we verify.

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preprint2014arXiv

Faceting Oscillations in Nano-Ferroelectrics

We observe periodic faceting of 8-nm diameter ferroelectric disks on a 10 s time-scale when thin Pb(Zr0.52Ti0.48)O3 (PZT) film is exposed to constant high-resolution transmission electron microscopy (HRTEM) beams. The oscillation is between circular disk geometry and sharply faceted hexagons. The behavior is analogous to that of spin structure and magnetic domain wall velocity oscillations in permalloy [A. Bisig et al., Nature Commun. 4, 2328 (2013)], involving overshoot and de-pinning from defects [C. P. Amann, et al., J. Rheol. 57, 149-175 (2013)].

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preprint2014arXiv

Ferroelectric and Photovoltaic Properties of Transition Metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta Thin Films

We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 μC/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 μA/cm2) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of VOC and direction of short circuit current (ISC), a step forward towards the realization of noncentrosymmetric ferroelectric material sensitive to visible light.

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preprint2014arXiv

Multifunctional Magnetoelectric Materials for Device Applications

Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a variety of device applications. Since single-phase materials exist rarely in nature with such cross-coupling properties, an intensive research activity is being pursued towards the discovery of new single-phase multiferroic materials and the design of new engineered materials with strong magneto-electric (ME) coupling. This review article summarizes the development of different kinds of multiferroic material: single-phase and composite ceramic, laminated composite, and nanostructured thin films. Thin-film nanostructures have higher magnitude direct ME coupling values and clear evidence of indirect ME coupling compared with bulk materials. Promising ME coupling coefficients have been reported in laminated composite materials in which signal to noise ratio is good for device fabrication. We describe the possible applications of these materials.

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preprint2014arXiv

Quantum criticality in a uniaxial organic ferroelectric

Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail - the first time for a uniaxial ferroelectric and for an organic ferroelectric - and was found to persist up to temperatures of at least 30K to 40K. The nature of long-range dipole interactions in uniaxial materials, which lead to non-analytical terms in the free-energy expansion in the polarization, predict a dielectric susceptibility varying as $1/T^3$ close to the quantum critical point. Rather than this, we find that the dielectric susceptibility varies as $1/T^2$ as expected and observed in better known multi-axial systems. We explain this result by identifying the ultra-weak nature of the dipoles in the TSCC family of crystals. Interestingly we observe a shallow minimum in the inverse dielectric function at low temperatures close to the quantum critical point in paraelectric samples that may be attributed to the coupling of quantum polarization and strain fields. Finally we present results of the heat capacity and electro-caloric effect and explain how the time dependence of the polarization in ferroelectrics and paraelectrics should be considered when making quantitative estimates of temperature changes induced by applied electric fields.

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preprint2013arXiv

High-Symmetry Polarization Domains in Low-Symmetry Ferroelectrics

We present experimental evidence for hexagonal domain faceting in the ferroelectric polymer PVDF-TrFE films having the lower orthorhombic crystallographic symmetry. This effect can arise from purely electrostatic depolarizing forces. We show that in contrast to magnetic bubble shape domains where such type of deformation instability has a predominantly elliptical character, the emergence of more symmetrical circular harmonics is favored in ferroelectrics with high dielectric constant.

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preprint2013arXiv

Manipulating Ferroelectric Domains in Nanostructures Under Electron Beams

Freestanding BaTiO3 nanodots exhibit domain structures characterized by distinct quadrants of ferroelastic 90° domains in transmission electron microscopy (TEM) observations. These differ significantly from flux-closure domain patterns in the same systems imaged by piezoresponse force microscopy. Based upon a series of phase field simulations of BaTiO3 nanodots, we suggest that the TEM patterns result from a radial electric field arising from electron beam charging of the nanodot. For sufficiently large charging, this converts flux-closure domain patterns to quadrant patterns with radial net polarizations. Not only does this explain the puzzling patterns that have been observed in TEM studies of ferroelectric nanodots, but also suggests how to manipulate ferroelectric domain patterns via electron beams.

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preprint2012arXiv

High-temperature spin-wave propagation in BiFeO3: relation to the Polomska transition

In bismuth ferrite thin films the cycloidal spiral spin structure is suppressed, and as a result the spin-wave magnon branches of long wavelength are reduced from a dozen to one, at ω= 19.2 cm-1 (T=4K). This spin wave has not been measured previously above room temperature, but in the present work we show via Raman spectroscopy that it is an underdamped propagating wave until 455 K. This has important room-temperature device implications. The data show that ω(T) follows an S=5/2 Brillouin function and hence its Fe+3 ions are in the high-spin 5/2 state and not the low-spin S=1/2 state. The spin wave cannot be measured as a propagating wave above 455 K. We also suggest that since this temperature is coincident with the mysterious "Polomska transition" (M. Polomska et al., Phys. Stat. Sol. A 23, 567, (1974)) at 458+/-5 K, that this may be due to overdamping.

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preprint2012arXiv

In-plane Dielectric and Magnetoelectric Studies of BiFeO3

In-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films show diffuse but prominent phase transitions near 450 (+/-10) K and 550 K with dielectric loss temperature dependences that suggest skin layer effects. The 450 K anomalies are near the "transition" first reported by Polomska et al. [Phys. Stat. Sol. 23, 567 (1974)]. The 550 K anomalies coincide with the surface phase transition recently reported [Xavi et al. PRL 106, 236101 (2011)]. In addition, anomalies are found at low temperatures: After several experimental cycles the dielectric loss shows a clear relaxor-like phase transition near what was previously suggested to be a spin reorientation transition (SRT) temperature (~ 201 K) for frequencies 1 kHz < f < 1MHz which follow a nonlinear Vogel-Fulcher (V-F) relation; an additional sharp anomaly is observed near ~180 K at frequencies below 1 kHz. As emphasized recently by Cowley et al. [Adv. Phys. 60, 229 (2011)], skin effects are expected for all relaxor ferroelectrics. Using the interdigital electrodes, experimental data and a theoretical model for in-plane longitudinal and transverse direct magnetoelectric (ME) coefficient are presented.

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preprint2012arXiv

Reduced graphene oxide as ultra fast temperature sensor

We demonstrate the excellent temperature sensing property of a chemically synthesized reduced graphene oxide (rGO). It is found that with increase in temperature from 80 to 375K, the resistivity of reduced graphene oxide monotonically decreases. The ultra-fast temperature sensing property is demonstrated by keeping and removing a block of ice under the rGO sensor, which shows the resistance of rGO increases by 15% in 592 miliseconds and recovers in 8.92 seconds. The temperature sensing of rGO is compared with a standard platinum thermo sensor (Pt 111) and found the sensitivity is much better in rGO.

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preprint2012arXiv

Surface phase transitions in BiFeO3 below room temperature

We combine a wide variety of experimental techniques to analyze two heretofore mysterious phase transitions in multiferroic bismuth ferrite at low temperature. Raman spectroscopy, resonant ultrasound spectroscopy, EPR, X-ray lattice constant measurements, conductivity and dielectric response, specific heat and pyroelectric data have been collected for two different types of samples: single crystals and, in order to maximize surface/volume ratio to enhance surface phase transition effects, BiFeO3 nanotubes were also studied. The transition at T=140.3K is shown to be a surface phase transition, with an associated sharp change in lattice parameter and charge density at the surface. Meanwhile, the 201K anomaly appears to signal the onset of glassy behaviour.

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preprint2011arXiv

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.

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preprint2010arXiv

Magnetic Effects on Dielectric and Polarization Behavior of Multiferroic Hetrostructures

PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ~ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30-54 micro C/cm2), dielectric constant(400-1700), and well saturated magnetization were observed depending upon the deposition temperature of the ferromagnetic layer and applied frequencies. Giant frequency-dependent change in dielectric constant and loss were observed above the ferromagnetic-paramagnetic temperature. The frequency dependent dielectric anomalies are attributed to the change in metallic and magnetic nature of LSMO and also the interfacial effect across the bilayer; an enhanced magnetoelectric interaction may be due to the Parish-Littlewood mechanism of inhomogeneity near the metal-dielectric interface.

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preprint2010arXiv

Phonon Spectroscopy Near Phase Transition Temperatures in Multferroic BiFeO3 Epitaxial Thin Films

We report a Raman scattering investigation of multiferroic bismuth ferrite BiFeO3 epitaxial (c-axis oriented) thin films from -192 to 1000C. Phonon anomalies have been observed in three temperature regions: in the gamma-phase from 930C to 950C; at ~370C, Neel temperature (TN), and at ~123C, due to a phase transition of unknown type (magnetic or structural). An attempt has been made to understand the origin of the weak phonon-magnon coupling and the dynamics of the phase sequence. The disappearance of several Raman modes at ~820C (Tc) is compatible with the known structural phase transition and the Pbnm orthoferrite space group assigned by Arnold {\it et al.} \cite{arnold:09}. The spectra also revealed a {\it non-cubic} $β$-phase from 820-930\dc and the same {\it non-cubic} phase extends through the $γ$-phase between 930-950\dc, in agreement with Arnold {\it et al.} \cite{arnold2:09}, and an evidence of a cubic $δ$-phase around 1000\dc in thin films that is not stable in powder and bulk. Such a cubic phase has been theoretically predicted in \cite{vasquez:prb09}. Micro-Raman scattering and X-ray diffraction showed no structural decomposition in thin films during the thermal cycling from 22-1000\dc.

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preprint2010arXiv

Processing and Characterization of Multiferroic Bi-relaxors

We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with polarization, loss (<1%), and resistivity (typically 108 ohm.cm) equal to or superior to BiFeO3. Single phase polycrystalline multiferroics PZTFWx thin films were fabricated on platinized silicon substrate by CSD and as epitaxial single-crystal films on MgO substrate by PLD. High dielectric constants (1200- 3000), high polarization (30 - 60 micro C/cm2), weak saturation magnetization (0.48 - 4.53 emu/cm3), a broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current were observed in these materials, suggesting the family as candidates for room-temperature multiferroic devices. The ferroelectric switching in these materials can be suppressed or quenched with applied magnetic field.

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preprint2009arXiv

Effect of Chemical Pressure on the Magnetic Transition of Multiferroic Ca-BiFeO3

Multiferroic BiFeO3 ceramics have been doped with Ca. The smaller ionic size of Ca compared with Bi means that doping acts as a proxy for hydrostatic pressure, at a rate of 1%Ca=0.3GPa. It is also found that the magnetic Neel temperature (TNeel) increases as Ca concentration increases, at a rate of 0.66K per 1%Ca (molar). Based on the effect of chemical pressure on TNeel, we argue that applying hydrostatic pressure to pure BiFeO3 can be expected to increase its magnetic transition temperature at a rate around ~2.2K/GPa. The results also suggest that pressure (chemical or hydrostatic) could be used to bring the ferroelectric critical temperature, Tc, and the magnetic TNeel closer together, thereby enhancing magnetoelectric coupling, provided that electrical conductivity can be kept sufficiently low.

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preprint2009arXiv

Quantum criticality in ferroelectrics

Materials tuned to the neighbourhood of a zero temperature phase transition often show the emergence of novel quantum phenomena. Much of the effort to study these new effects, like the breakdown of the conventional Fermi-liquid theory of metals has been focused in narrow band electronic systems. Ferroelectric crystals provide a very different type of quantum criticality that arises purely from the crystalline lattice. In many cases the ferroelectric phase can be tuned to absolute zero using hydrostatic pressure or chemical or isotopic substitution. Close to such a zero temperature phase transition, the dielectric constant and other quantities change into radically unconventional forms due to the quantum fluctuations of the electrical polarization. The simplest ferroelectrics may form a text-book paradigm of quantum criticality in the solid-state as the difficulties found in metals due to a high density of gapless excitations on the Fermi surface are avoided. We present low temperature high precision data demonstrating these effects in pure single crystals of SrTiO3 and KTaO3. We outline a model for describing the physics of ferroelectrics close to quantum criticality and highlight the expected 1/T2 dependence of the dielectric constant measured over a wide temperature range at low temperatures. In the neighbourhood of the quantum critical point we report the emergence of a small frequency independent peak in the dielectric constant at approximately 2K in SrTiO3 and 3K in KTaO3 believed to arise from coupling to acoustic phonons. Looking ahead, we suggest that in ferroelectric materials supporting mobile charge carriers, quantum paraelectric fluctuations may mediate new effective electron-electron interactions giving rise to a number of possible states such as superconductivity.

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preprint2009arXiv

Topology of the polarization field in ferroelectric nanowires from first principles

The behaviour of the cross-sectional polarization field is explored for thin nanowires of barium titanate from first-principles calculations. Topological defects of different winding numbers have been obtained, beyond the known textures in ferroelectric nanostructures. They result from the inward accommodation of the polarization patterns imposed at the surface of the wire by surface and edge effects. Close to a topological defect the polarization field orients out of the basal plane in some cases, maintaining a close to constant magnitude, whereas it virtually vanishes in other cases.

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preprint2003arXiv

Orientation Dependence of Ferroelectric Properties of Pulsed-Laser-Ablated Bi4-xNdxTi3O12 Films

Epitaxial (001)-, (118)-, and (104)-oriented Nd-doped Bi4Ti3O12 films have been grown by pulsed-laser deposition from a Bi4-xNdxTi3O12 (x=0.85) target on SrRuO3 coated single-crystal (100)-, (110)-, and (111)-oriented SrTiO3 substrates, respectively. X-ray diffraction illustrated a unique epitaxial relationship between film and substrate for all orientations. We observed a strong dependence of ferroelectric properties on the film orientation, with no ferroelectric activity in an (001)-oriented film; a remanent polarization, 2Pr, of 12 microC/cm2 and coercive field, Ec, of 120 kV/cm in a (118)-oriented film; and 2Pr = 40 microC/cm2, Ec = 50 kV/cm in a (104)-oriented film. The lack of ferroelectric activity along the c-axis is consistent with the orthorhombic nature of the crystal structure of the bulk material, as determined by powder neutron diffraction.

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