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R. S. Katiyar

R. S. Katiyar appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2014arXiv

Ferroelectric and Photovoltaic Properties of Transition Metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta Thin Films

We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 μC/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 μA/cm2) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of VOC and direction of short circuit current (ISC), a step forward towards the realization of noncentrosymmetric ferroelectric material sensitive to visible light.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High-temperature spin-wave propagation in BiFeO3: relation to the Polomska transition

In bismuth ferrite thin films the cycloidal spiral spin structure is suppressed, and as a result the spin-wave magnon branches of long wavelength are reduced from a dozen to one, at ω= 19.2 cm-1 (T=4K). This spin wave has not been measured previously above room temperature, but in the present work we show via Raman spectroscopy that it is an underdamped propagating wave until 455 K. This has important room-temperature device implications. The data show that ω(T) follows an S=5/2 Brillouin function and hence its Fe+3 ions are in the high-spin 5/2 state and not the low-spin S=1/2 state. The spin wave cannot be measured as a propagating wave above 455 K. We also suggest that since this temperature is coincident with the mysterious "Polomska transition" (M. Polomska et al., Phys. Stat. Sol. A 23, 567, (1974)) at 458+/-5 K, that this may be due to overdamping.

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preprint2012arXiv

In-plane Dielectric and Magnetoelectric Studies of BiFeO3

In-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films show diffuse but prominent phase transitions near 450 (+/-10) K and 550 K with dielectric loss temperature dependences that suggest skin layer effects. The 450 K anomalies are near the "transition" first reported by Polomska et al. [Phys. Stat. Sol. 23, 567 (1974)]. The 550 K anomalies coincide with the surface phase transition recently reported [Xavi et al. PRL 106, 236101 (2011)]. In addition, anomalies are found at low temperatures: After several experimental cycles the dielectric loss shows a clear relaxor-like phase transition near what was previously suggested to be a spin reorientation transition (SRT) temperature (~ 201 K) for frequencies 1 kHz < f < 1MHz which follow a nonlinear Vogel-Fulcher (V-F) relation; an additional sharp anomaly is observed near ~180 K at frequencies below 1 kHz. As emphasized recently by Cowley et al. [Adv. Phys. 60, 229 (2011)], skin effects are expected for all relaxor ferroelectrics. Using the interdigital electrodes, experimental data and a theoretical model for in-plane longitudinal and transverse direct magnetoelectric (ME) coefficient are presented.

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preprint2010arXiv

Phonon Spectroscopy Near Phase Transition Temperatures in Multferroic BiFeO3 Epitaxial Thin Films

We report a Raman scattering investigation of multiferroic bismuth ferrite BiFeO3 epitaxial (c-axis oriented) thin films from -192 to 1000C. Phonon anomalies have been observed in three temperature regions: in the gamma-phase from 930C to 950C; at ~370C, Neel temperature (TN), and at ~123C, due to a phase transition of unknown type (magnetic or structural). An attempt has been made to understand the origin of the weak phonon-magnon coupling and the dynamics of the phase sequence. The disappearance of several Raman modes at ~820C (Tc) is compatible with the known structural phase transition and the Pbnm orthoferrite space group assigned by Arnold {\it et al.} \cite{arnold:09}. The spectra also revealed a {\it non-cubic} $β$-phase from 820-930\dc and the same {\it non-cubic} phase extends through the $γ$-phase between 930-950\dc, in agreement with Arnold {\it et al.} \cite{arnold2:09}, and an evidence of a cubic $δ$-phase around 1000\dc in thin films that is not stable in powder and bulk. Such a cubic phase has been theoretically predicted in \cite{vasquez:prb09}. Micro-Raman scattering and X-ray diffraction showed no structural decomposition in thin films during the thermal cycling from 22-1000\dc.

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preprint2010arXiv

Processing and Characterization of Multiferroic Bi-relaxors

We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with polarization, loss (<1%), and resistivity (typically 108 ohm.cm) equal to or superior to BiFeO3. Single phase polycrystalline multiferroics PZTFWx thin films were fabricated on platinized silicon substrate by CSD and as epitaxial single-crystal films on MgO substrate by PLD. High dielectric constants (1200- 3000), high polarization (30 - 60 micro C/cm2), weak saturation magnetization (0.48 - 4.53 emu/cm3), a broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current were observed in these materials, suggesting the family as candidates for room-temperature multiferroic devices. The ferroelectric switching in these materials can be suppressed or quenched with applied magnetic field.

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