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G. Catalan

G. Catalan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-ph

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Published work

2 published item(s)

preprint2021arXiv

A re-examination of antiferroelectric PbZrO$_3$ and PbHfO$_3$: an 80-atom $Pnam$ structure

First principles density functional theory (DFT) simulations of antiferroelectric (AFE) PbZrO$_3$ and PbHfO$_3$ reveal a dynamical instability in the phonon spectra of their purported low temperature $Pbam$ ground states. This instability doubles the $c$-axis of $Pbam$ and condenses five new small amplitude phonon modes giving rise to an 80-atom $Pnam$ structure. Compared with $Pbam$, the stability of this structure is slightly enhanced and highly reproducible as demonstrated through using different DFT codes and different treatments of electronic exchange & correlation interactions. This suggests that $Pnam$ is a new candidate for the low temperature ground state of both materials. With this finding, we bring parity between the AFE archetypes and recent observations of a very similar AFE phase in doped or electrostatically engineered BiFeO$_3$.

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preprint2019arXiv

BaTiO3 thin films as transitional ferrroelectrics with giant dielectric response

Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelectric-ferroelectric critical temperature. The flat energy landscapes close to these PTs give rise to polarization rotation under external stimuli, being responsible for the best piezoelectrics so far and a their huge market. But this approach requires complex chemistry to achieve temperature-independent PT boundaries and often involves lead-containing compounds. Here we report that such a bridging state is possible in thin films of chemically simple materials such as BaTiO3. A coexistence of tetragonal, orthorhombic and their bridging low-symmetry phases are shown to be responsible for the continuous vertical polarization rotation, recreating a smear in-transition state and leading to giant temperature-independent dielectric response. These features are distinct from those of single crystals, multi-domain crystals, ceramics or relaxor ferroelectrics, requiring a different description. We believe that other materials can be engineered in a similar way to form a class of ferroelectrics, in which MPB solid solutions are also included, that we propose to coin as transitional ferroelectrics.

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