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Ram S. Katiyar

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Published work

16 published item(s)

preprint2021arXiv

High Entropy Oxide Relaxor Ferroelectrics

Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional doping of known ferroelectrics, as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO3 perovskite allows stabilization of novel relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are used to create single crystal Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 [Ba(5B)O] films. The high levels of configurational disorder present in this system is found to influence dielectric relaxation, phase transitions, nano-polar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first principles theory calculations are used to predict possible combinations of cations to quantify the relative feasibility of formation of highly disordered single-phase perovskite systems. The ability to stabilize single-phase perovskites with such a large number of different cations on the B-sites offers new possibilities for designing high-performance materials for piezoelectric, pyroelectric and tunable dielectric applications.

preprint2019arXiv

Manipulation of exciton and trion quasiparticles in monolayer WS2 via charge transfer

Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical doping in CVD grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL intensities suggest n-type doping in WS2. The temperature-dependent PL spectra of the doped 1L-WS2 reveal significant enhancement of trion emission intensity over the excitonic emission at low temperature indicating the stability of trion at low temperature. The temperature dependent exciton-trion population dynamic has been modeled using the law of mass action of trion formation. These results shed light on the solution-based chemical doping in 1L WS2 and its profound effect on the photoluminescence which is essential for the control of optical and electrical properties for optoelectronics applications.

preprint2016arXiv

Giant Magnetoelectric coupling in Single Phase Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ Multiferroics

During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupancy in B site of PZT. This material exhibited a giant ME coupling coefficient ~0.36 mV/cm.Oe. Interestingly, this is the first time any room temperature single phase compound that showed ME trends, and magnitude similar to those in the well established mechanical strain-mediated ferroelectric and ferromagnetic composites; the latter ones are already in the commercial stage as nT/pT magnetic field sensors due to their large ME values. The presence of Pd in PZTP30 has been confirmed by XPS and XRF studies and assigned with related binding energies of Pd+2 and Pd+4 ions as 336.37 eV, 342.9 eV, and 337.53 eV, 343.43 eV, respectively, which may be the origin of room temperature magnetism in Pd substituted PZT ceramics. A sharp first order ferroelectric phase transition was observed at ~569 K (+/-5 K) that is confirmed from dielectric, Raman, and thermal analysis. Both ferromagnetic and ferroelectric orderings with large ME coupling were found above room temperature, a significant step forward in the development of single phase ME material with enhanced functionalities.

preprint2015arXiv

Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions

Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LMSO with 7 nm polar capping.

preprint2015arXiv

Pyroelectric Control of Spin Polarization Assisted Coexistence of Giant Positive and Negative Magnetocaloric Effects

Electric field control of magnetism is the key to many next generation spintronics applications1. Ferroelectric control of spin polarization2,3 followed by the electrically driven repeatable magnetization reversal in the absence of applied magnetic field4 have proven to be the milestones in this direction. This article propose how these phenomena could be utilized in a reverse manner to gain control over magnetization even in the absence of electric field. In turn, coexistence of positive5 as well as negative6 magnetocaloric effect (MCE) is attained in tri-layered PbZr0.53Ti0.47O3-CoFe2O4-PbZr0.53Ti0.47O3 (PZT/CFO/PZT) nanostructures for identical temperature ranges when subjected to different applied magnetic fields. Unlike conventional approaches5-9 the present study demonstrate that it is possible to obtain giant MCE merely by magneto-pyroelectric coupling. Consequently, the MCE entropy changes calculated using Maxwell equations are found to be as large as reported for existing giant MCE values6,9,10.

preprint2015arXiv

Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt-(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3-LaNiO3 heterostructures

We studied switchable photovoltaic and photo-diode characteristics of Pt (Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32 microAmp cm2 and VOC 0.04 V, which increase to maximum value of JSC 303 ( 206) microAmp cm2 and VOC 0.32 (0.26) V after upward (downward) poling at 8 V. We believe that Schottky barrier modulation by polarization flipping at Pt BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt BSFHO LNO heterostructures.

preprint2014arXiv

Multifunctional Magnetoelectric Materials for Device Applications

Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a variety of device applications. Since single-phase materials exist rarely in nature with such cross-coupling properties, an intensive research activity is being pursued towards the discovery of new single-phase multiferroic materials and the design of new engineered materials with strong magneto-electric (ME) coupling. This review article summarizes the development of different kinds of multiferroic material: single-phase and composite ceramic, laminated composite, and nanostructured thin films. Thin-film nanostructures have higher magnitude direct ME coupling values and clear evidence of indirect ME coupling compared with bulk materials. Promising ME coupling coefficients have been reported in laminated composite materials in which signal to noise ratio is good for device fabrication. We describe the possible applications of these materials.

preprint2014arXiv

Structural phase transition of ternary high-k dielectric SmGdO3: Evidence from ADXRD and Raman Spectroscopic Studies

High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at about 8.9 GPa. The observed pressure-volume data were fitted into the third order Birch-Murnaghan equation of state yielding zero pressure bulk moduli B0 = 132(22) and 177(22) GPa for monoclinic and hexagonal phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the phase transition. The mode Gruneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phase of SGO were calculated.

preprint2014arXiv

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered in nanoscale -- in particular, the role of crystal quality in low dimensions. Present work reports the synthesis of large area MoS2 films on insulating substrates with different surface morphology via vapor phase deposition by varying the growth temperatures. The crystallinity of the samples is examined by transmission electron microscopy and Raman spectroscopy. From contact angle measurements, it is possible to correlate the wettability with crystallinity at nanoscale. The specific surface energy for few layers thick MoS2 is estimated to be around 46.5 mJ/m2. Our results shed light on the MoS2-water interaction which is significant for developing important devices based on MoS2 coated surfaces for micro-fluidic applications.

preprint2014arXiv

Temperature dependent Raman study of phonons of different symmetries in single crystal Bi2Se3

High quality single crystals of Bi2Se3 were grown using a modified Bridgman technique, the detailed study were carried out using Raman spectroscopy and characterized by Laue diffraction and high resolution transmission electron microscopy. Polarized Raman scattering measurements were also carried out, and both the A1g and A2g phonon modes showed strong polarization effect, which is consistent with the theoretical prediction. The temperature dependent study (in the temperature range 83 K to 523 K of Raman active modes were reported and observed to follow a systematic red shift. The frequency of these phonon modes are found to vary linearly with temperature and can be explained by first order temperature co-efficient. The temperature co-efficient for A11g, E2g and A21g modes were estimated to be -1.44*10-2, -1.94*10-2 and -1.95*10-2cm-1/K respectively.

preprint2013arXiv

Optical Properties and Raman Studies of Partially Edge Terminated Vertically Aligned Nanocrystalline MoS2 Thin Film

The optical and vibrational properties of nanocrystalline thin films of MoS2, comprised of a mixture of edge terminated vertically aligned (ETVA) and (001)-oriented regions, on large insulating substrates are reported. From high resolution transmission electron microscopy (HRTEM), the average size of ETVA nanocrystals were ~5 nm and each nanocrystal consisted of only 3 to 5 monolayers of MoS2. The films were highly transparent (~80%) but the percent of transmittance decreased as the energy of the incident light approached to the band gap. Additionally, weak excitonic peaks were observed both in the absorption and transmission spectra. The room temperature Raman study showed that both the E12g and A1g modes were significantly broader, and a few additional Raman modes were observed when compared to bulk MoS2. The broadening of the A1g mode was analyzed using the phonon-confinement model and the calculated particle size was in good agreement with TEM observations. Moreover, the temperature coefficient of the A1g mode was estimated from the temperature dependent Raman studies.

preprint2013arXiv

Phonons correlation with magnetic excitations in weak ferromagnet YCrO3

We report on the temperature dependent Raman spectroscopic studies of orthorombic distorted perovskite YCrO3 in the temperature range of 20-300K. Temperature dependence of DC-magnetization measurement under field cooled and zero field cooled modes confirmed the transition temperature (TN ~142K) and anomalous characteristic temperature (T* ~60K), above which magnetization tends to saturate. Magnetization isotherm recorded below TN at 125K shows clear loop opening without magnetization saturation up to 20kOe, indicating the coexistence of antiferromagnetic (AFM) interaction with weak ferromagnetic (WFM) phase. Mean field calculation for exchange constants further confirms the complex magnetic phase below TN. Temperature evolution of lineshape parameters of selected modes (associated with the octahedral rotation and A-shift in the unit cell) revealed anomalous phonon shift near Cr3+ magnetic ordering temperature (TN ~142K). Additional phonon anomaly was identified at T* ~60K in agreement with the magnetization results and reflects the change in spin dynamics, plausibly due to the change in Cr-spin configuration. Moreover, the positive and negative shift in Raman frequency below TN revel the existence of competing WFM and AFM exchanges. The phonon shift of B3g (3)-octahedral rotation mode fairly scaled with the square of sublattice magnetization from TN to T*, below which it start to depart from theconventional behaviour and need further attention. This correlation between magnetic and Raman data elucidate the spin-phonon coupling owing to the multiferroic phenomenon in YCrO3.

preprint2013arXiv

Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2

We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first order temperature coefficients for E2g and A1g modes were found to be 1.32*10-2 and 1.23*10-2 cm-1/K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be about 52 W/mK.

preprint2012arXiv

Reduced graphene oxide as ultra fast temperature sensor

We demonstrate the excellent temperature sensing property of a chemically synthesized reduced graphene oxide (rGO). It is found that with increase in temperature from 80 to 375K, the resistivity of reduced graphene oxide monotonically decreases. The ultra-fast temperature sensing property is demonstrated by keeping and removing a block of ice under the rGO sensor, which shows the resistance of rGO increases by 15% in 592 miliseconds and recovers in 8.92 seconds. The temperature sensing of rGO is compared with a standard platinum thermo sensor (Pt 111) and found the sensitivity is much better in rGO.

preprint2010arXiv

Magnetic Effects on Dielectric and Polarization Behavior of Multiferroic Hetrostructures

PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ~ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30-54 micro C/cm2), dielectric constant(400-1700), and well saturated magnetization were observed depending upon the deposition temperature of the ferromagnetic layer and applied frequencies. Giant frequency-dependent change in dielectric constant and loss were observed above the ferromagnetic-paramagnetic temperature. The frequency dependent dielectric anomalies are attributed to the change in metallic and magnetic nature of LSMO and also the interfacial effect across the bilayer; an enhanced magnetoelectric interaction may be due to the Parish-Littlewood mechanism of inhomogeneity near the metal-dielectric interface.

preprint2010arXiv

Novel room temperature Multiferroics for Random Access Memory Elements

We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD) [epitaxial] onto Pt/Ti/SiO2/Si(100) and SrTiO3/Si substrates. These exhibit ferroelectricity and (weak) ferromagnetism above room temperature with strain coupling via electrostriction and magnetostriction. Application of modest magnetic field strength ((mu)0H < 1.0 Tesla) destabilizes the long-range ferroelectric ordering and switches the polarization from ca. 22 (mu)C/cm2 (0.22 C/m2) to zero (relaxor state). This offers the possibility of three-state logic (+P, 0, -P) and magnetically switched polarizations. Because the switching is of large magnitude (unlike the very small nC/cm2 values in terbium manganites) and at room-temperature, commercial devices should be possible.