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Researcher profile

Hyunsoo Yang

Hyunsoo Yang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

8 published item(s)

preprint2026arXiv

Bio-resorbable magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non-volatile memory, MTJs have received substantial attention due to its CMOS compatibility, low power consumption, fast switching speed, and high endurance. In parallel, bio-resorbable electronics have emerged as a promising solution for systems requiring temporary operation and secure data disposal, especially in military, intelligence, and biomedical systems where devices must safely disintegrate under physiological conditions. In this study, we investigate the bio-resorbability of MTJ by analyzing the dissolution behavior of its nanometer-thick constituent layers in phosphate-buffered saline (PBS) solution at pH 7.4, simulating physiological environments. The MTJ structures, composed of bio-resorbable materials, exhibit well-controlled degradation behaviors. Critically, as one of the ferromagnetic layers dissolves, binary information is irreversibly lost, within 10 hours of immersion. These findings highlight the potential of MTJs not only as high-performance memory elements but also as secure, transient data storage platforms. The ability to modify the dissolution lifetime by materials and thickness selection offers unique advantages for short-lived implantable devices, paving the way for integrating spintronic functionality into next-generation bioresorbable electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Crystalline-dependent magnon torques in all-sputtered Hf/Cr2O3/ferromagnet heterostructures

Electron motion in spin-orbit torque devices inevitably leads to the Joule heating issue. Magnon torques can potentially circumvent this issue, as it enables the transport of spin angular momentum in insulating magnetic materials. In this work, we fabricate a sandwich structure composed of Hf/antiferromagnetic Cr2O3/ferromagnet and demonstrate that the magnon torque is strongly dependent on the crystalline structure of Cr2O3. Magnon torques are stronger when the Neel vector of Cr2O3 aligns parallel to the spin polarization generated in Hf, while they are suppressed when the Neel vector is perpendicular to the spin polarization. The magnon torque efficiency is estimated to be -0.134 using in-plane second harmonic Hall measurements. Using magnon torques, we achieve perpendicular magnetization switching of CoFeB, with a critical switching current density of 4.09 x 10^7 A/cm^2. Furthermore, the spin angular momentum loss due to the insertion of Cr2O3 is found to be lower than that of polycrystalline NiO. Our work highlights the role of antiferromagnet crystalline structures in controlling magnon torques, broadening the potential applications of magnon torques.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Observation of magnon torques mediated by orbital hybridization at the light metal/antiferromagnetic insulator interface

Magnon torques, which can operate without involving moving electrons, could circumvent the Joule heating issue. In conventional magnon torque systems, the spin source layer with strong spin-orbit coupling is utilized to inject magnons, and the efficiency is limited by the inherent spin Hall conductivity of the spin source layer. In this work, we observe magnon torques in the Cr/NiO/ferromagnet heterostructure with the effective spin Hall conductivity of 2.45x10^5 hbar/(2eΩm), twice that of the best conventional magnon torque system. We demonstrate the magnon-torque-driven switching of a perpendicularly magnetized CoFeB layer at room temperature, with a switching power consumption density of 0.136 mW/μm^2. We find that the magnon torque originates from the orbital hybridization and interfacial inversion symmetry breaking at the Cr/NiO interface. Our findings not only significantly enhance the efficiency of magnon torques, but also provide key insights into the fundamental mechanisms of magnon injections.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets

Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current density increases dramatically in materials with strong exchange interaction and rapidly exceeds 1012 A m-2, leading to the device breakdown and thus the lack of experimental evidence. By translating the collective magnetization oscillations into voltage signals, we propose a three-terminal device for the electrical detection of THz spin wave. Through material engineering, wide frequency range from 264 GHz to 1.1 THz and uniform continuous signals with improved output power can be obtained. As a reverse effect, the spin wave generated in this system is able to move ferrimagnetic domain wall. Our work provides guidelines for the experimental verification of THz spin wave, and could stimulate the design of THz spintronic oscillators for wideband applications as well as the all-magnon spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emerging spintronics phenomena and applications

Development of future sensor, memory, and computing nanodevices based on novel physical concepts is one of the significant research endeavors in solid-state research. The field of spintronics is one such promising area of nanoelectronics which utilizes both the charge and spin of an electron for device operations. The advantage offered by spin systems is in their non-volatility and low-power functionality. This paper reviews emerging spintronic phenomena and the research advancements in diverse spin based applications. Spin devices and systems for logic, memories, emerging computing schemes, flexible electronics and terahertz emitters are discussed in this report.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Microscopic Origin of Spin-Orbit Torque in Ferromagnetic Heterostructures: A First Principles Approach

We present an {\it ab initio}-based theoretical framework which elucidates the origin of the spin-orbit torque (SOT) in Normal-Metal(NM)/Ferromagnet(FM) heterostructures. The SOT is decomposed into two contributions, namely, {\it spin-Hall} and the {\it spin-orbital} components. We find that {\it (i)} the Field-Like (FL) SOT is dominated by the spin-orbital component and {\it (ii)} both components contribute to the damping-like torque with comparable magnitude in the limit of thick Pt film. The contribution of the spin-orbital component to the DL-SOT is present only for NMs with strong SOC coupling strength. We demonstrate that the FL-SOT can be expressed in terms of the non-equilibrium spin-resolved orbital moment accumulation. The calculations reveal that the experimentally reported oxygen-induced sign-reversal of the FL-SOT in Pt/Co bilayers is due to the significant reduction of the majority-spin orbital moment accumulation on the interfacial NM atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical visualization of the enhanced spin Hall effect in bismuth doped silicon

Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-orbit torque magnetization switching in MoTe2/permalloy heterostructures

The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based switching requires harnessing both new materials and novel physics to obtain high charge-to-spin conversion efficiencies, thus making the choice of spin source crucial. Here we report the observation of spin-orbit torque switching in bilayers consisting of a semimetallic film of 1T'-MoTe2 adjacent to permalloy. Deterministic switching is achieved without external magnetic fields at room temperature, and the switching occurs with currents one order of magnitude smaller than those typical in devices using the best-performing heavy metals. The thickness dependence can be understood if the interfacial spin-orbit contribution is considered in addition to the bulk spin Hall effect. Further threefold reduction in the switching current is demonstrated with resort to dumbbell-shaped magnetic elements. These findings foretell exciting prospects of using MoTe2 for low-power semimetal material based spin devices.

0 citations0 reviewsNo code linkedOpen access