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Researcher profile

Young Jun Shin

Young Jun Shin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

7 published item(s)

preprint2013arXiv

Graphene/liquid crystal based terahertz phase shifters

Due to its high electrical conductivity and excellent transmittance at terahertz frequencies, graphene is a promising candidate as transparent electrodes for terahertz devices. We demonstrate a liquid crystal based terahertz phase shifter with the graphene films as transparent electrodes. The maximum phase shift is 10.8 degree and the saturation voltage is 5 V with a 50 um liquid crystal cell. The transmittance at terahertz frequencies and electrical conductivity depending on the number of graphene layer are also investigated. The proposed phase shifter provides a continuous tunability, fully electrical controllability, and low DC voltage operation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Stochastic Nonlinear Electrical Characteristics of Graphene

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 10^(3). It is found that graphene channel experience the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Disorder-free sputtering method on graphene

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Frictional characteristics of exfoliated and epitaxial graphene

To determine the friction coefficient of graphene, micro-scale scratch tests are conducted on exfoliated and epitaxial graphene at ambient conditions. The experimental results show that the monolayer, bilayer, and trilayer graphene all yield friction coefficients of approximately 0.03. The friction coefficient of pristine graphene is less than that of disordered graphene, which is treated by oxygen plasma. Ramping force scratch tests are performed on graphene with various numbers of layers to determine the normal load required for the probe to penetrate graphene. A very low friction coefficient and also its high pressure resistance make graphene a promising material for antiwear coatings.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ambipolar bistable switching effect of graphene

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the ON/OFF ratio of graphene resistive switching are suggested.

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preprint2011arXiv

Surface energy engineering of graphene

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69° on SiC substrates to 92° with graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single, bi, and multi layer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and correlation between the level of disorder and wettability is reported. By using low power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunneling characteristics of graphene

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the tunneling regime which can be employed in various applications.

0 citations0 reviewsNo code linkedOpen access