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Source author record

Young Jun Shin

Young Jun Shin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

14 published item(s)

preprint2015arXiv

Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures

Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here, we report an extremely large local magnetoresistance of ~ 2,000% at 400 K and a non-local magnetoresistance of > 90,000% in 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant magnetoresistance in single layer graphene flakes with a gate voltage tunable weak antilocalization

A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at room temperature implying potential applications of graphene in magnetic sensors. Both the weak antilocalization and giant magnetoresistance persists far away from the charge neutrality point in contrast to previous reports, and both effects are originated from charged impurities. Interestingly, the signatures of Shubnikov-de Haas oscillations and the quantum Hall effect are also observed for the same sample.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene/liquid crystal based terahertz phase shifters

Due to its high electrical conductivity and excellent transmittance at terahertz frequencies, graphene is a promising candidate as transparent electrodes for terahertz devices. We demonstrate a liquid crystal based terahertz phase shifter with the graphene films as transparent electrodes. The maximum phase shift is 10.8 degree and the saturation voltage is 5 V with a 50 um liquid crystal cell. The transmittance at terahertz frequencies and electrical conductivity depending on the number of graphene layer are also investigated. The proposed phase shifter provides a continuous tunability, fully electrical controllability, and low DC voltage operation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Stochastic Nonlinear Electrical Characteristics of Graphene

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 10^(3). It is found that graphene channel experience the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Disorder-free sputtering method on graphene

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Frictional characteristics of exfoliated and epitaxial graphene

To determine the friction coefficient of graphene, micro-scale scratch tests are conducted on exfoliated and epitaxial graphene at ambient conditions. The experimental results show that the monolayer, bilayer, and trilayer graphene all yield friction coefficients of approximately 0.03. The friction coefficient of pristine graphene is less than that of disordered graphene, which is treated by oxygen plasma. Ramping force scratch tests are performed on graphene with various numbers of layers to determine the normal load required for the probe to penetrate graphene. A very low friction coefficient and also its high pressure resistance make graphene a promising material for antiwear coatings.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene induced tunability of the surface plasmon resonance

Tunability of the surface plasmon resonance wavelength is demonstrated by varying the thickness of Al2O3 spacer layer inserted between the graphene and nanoparticles. By varying the spacer layer thickness from 0.3 to 1.8 nm, the resonance wavelength is shifted from 583 to 566 nm. The shift is due to a change in the electromagnetic field coupling strength between the localized surface plasmons excited in the gold nanoparticles and a single layer graphene film. In contrast, when the graphene film is absent from the system, no noticeable shift in the resonance wavelength is observed upon varying the spacer thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Shifting of surface plasmon resonance due to electromagnetic coupling between graphene and Au nanoparticles

Shifting of the surface plasmon resonance wavelength induced by the variation of the thickness of insulating spacer between single layer graphene and Au nanoparticles is studied. The system demonstrates a blue shift of 29 nm as the thickness of the spacer layer increases from 0 to 15 nm. This is due to the electromagnetic coupling between the localized surface plasmons excited in the nanoparticles and the graphene film. The strength of the coupling decays exponentially with a decay length of d/R=0.36, where d is the spacer layer thickness and R is the diameter of the Au nanoparticles. The result agrees qualitatively well with the plasmon ruler equation. Interestingly, a further increment of the spacer layer thickness induces a red shift of 17 nm in the resonance wavelength and the shift saturates when the thickness of the spacer layer increases above 20 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bilayer graphene

Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show hysteresis with a charging and discharging time constant of ~100 μs. However, the measured capacitance across the graphene channel does not show any hysteresis, but shows an abrupt jump at a high channel voltage due to the emergence of an order, indicating that the origin of hysteresis between gate and source is due to charge traps present in the gate oxide and graphene interface.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tunable metal-insulator transitions in bilayer graphene by thermal annealing

Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic properties by adsorbing water vapor, which makes graphene a technologically promising material for sensor applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Universal scaling of resistivity in bilayer graphene

We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ambipolar bistable switching effect of graphene

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the ON/OFF ratio of graphene resistive switching are suggested.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Surface energy engineering of graphene

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69° on SiC substrates to 92° with graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single, bi, and multi layer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and correlation between the level of disorder and wettability is reported. By using low power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunneling characteristics of graphene

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the tunneling regime which can be employed in various applications.

0 citations0 reviewsNo code linkedOpen access