BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Praveen Deorani

Praveen Deorani contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2014arXiv

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires

Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from noncollinear magnetization. Ta/CoFeB/MgO structures are expected to be useful for non-volatile memories and logic devices due to its perpendicular anisotropy and large current induced spin-orbit effective fields. However many aspects such as the angular and temperature dependent phenomena of the effective fields are little understood. Here, we evaluate the angular and temperature dependence of the current-induced spin-orbit effective fields considering contributions from both the anomalous and planar Hall effects. The longitudinal and transverse components of effective fields are found to have strong angular dependence on the magnetization direction at 300 K. The transverse field decreases significantly with decreasing temperature, whereas the longitudinal field shows weaker temperature dependence. Our results reveal important features and provide an opportunity for a more comprehensive understanding of current induced spin-orbit effective fields.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A new route to spin-orbit torque engineering via oxygen manipulation

Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the combination of the spin transfer torque with the spin Hall effect enables more efficient manipulation. A versatile control mechanism of such spin-orbit torques is beneficial to envision device applications with competitive advantages over the existing schemes. Here we report that the oxidation manipulation of spin-orbit torque devices triggers a new mechanism, and the resulting torques are estimated to be about two times stronger than that of the spin Hall effect. Our result introduces an entirely new way to engineer the spin-orbit torques for device operation via oxygen manipulation. Combined with electrical gating for the control of the oxygen content, our finding may also pave the way for towards reconfigurable logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Characterization of magnetostatic surface spin waves in magnetic thin films: evaluation for microelectronic applications

The authors have investigated the possibility of utilizing spin waves for inter- and intra-chip communications, and as logic elements using both simulations and experimental techniques. Through simulations it has been shown that the decay lengths of magnetostatic spin waves are affected most by the damping parameter, and least by the exchange stiffness constant. The damping and dispersion properties of spin waves limit the attenuation length to several tens of microns. Thus, we have ruled out the possibility of inter-chip communications via spin waves. Experimental techniques for the extraction of the dispersion relationship have also been demonstrated, along with experimental demonstrations of spin wave interference for amplitude modulation. The effectiveness of spin wave modulation through interference, along with the capability of determining the spin wave dispersion relationships electrically during manufacturing and testing phase of chip production may pave the way for using spin waves in analog computing wherein the circuitry required for performing similar functionality becomes prohibitive.

0 citations0 reviewsNo code linkedOpen access