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Paper detail

Tunneling characteristics of graphene

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the tunneling regime which can be employed in various applications.

preprint2011arXivOpen access
Young Jun ShinGopinadhan KalonJaesung SonJae Hyun KwonJing NiuCharanjit S. BhatiaGengchiau LiangHyunsoo Yang
cond-mat.mes-hallcond-mat.mtrl-sci
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Young Jun ShinGopinadhan KalonJaesung SonJae Hyun KwonJing NiuCharanjit S. BhatiaGengchiau LiangHyunsoo Yang

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