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Hideo Hosono

Hideo Hosono appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallphysics.chem-phcond-mat.dis-nnphysics.comp-phphysics.optics

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Published work

70 published item(s)

preprint2023arXiv

Superconductivity in an Orbital-reoriented SnAs Square Lattice: a Case Study of Li0.6Sn2As2 and NaSnAs

Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6Sn2As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px+py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconductors.

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preprint2022arXiv

Caging-Pnictogen-Induced Superconductivity in Skutterudites IrX3 (X = As, P)

Here we report on a new kind of compound, XδIr4X12-δ (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (IrP3). In contrast to all of the electron-doped skutterudites, the electronic states around the Fermi level in XδIr4X12-δ are dominated by the caged X atom, which can be described by a simple body-centered tight-binding model, implying a distinct paring mechanism. Our density functional theory (DFT) calculations reveal an intimate relationship between the pressure-dependent local-phonon mode and the enhancement of Tc. The discovery of XδIr4X12-δ provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed here represents a new strategy of carrier doping in caged structures, without introducing extra elements.

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preprint2022arXiv

Fishtail effect and the vortex phase diagram of high-entropy alloy superconductor

High-entropy alloy (HEA) is an attracting topic raising in materials science and condensed matter physics. Although several types of superconductors have been discovered in HEAs, the critical currents (Jc) of HEA superconductors remain uncharacterized up to now. Here, we systematically study the current-carrying ability of (TaNb)0.7(HfZrTi)0.5 HEA at various heat treatment conditions. We obtained the high upper critical field and large current carrying ability, which point to optimistic applications. Interestingly, the fishtail or second peak effect was found for the first time in HEA superconductors, and the position of the vortex pinning force shows a maximum at 0.72 of the reduced field, which is quite different from the cuprates and iron-based high-Tc superconductors. Together with the resistive measurements, the vortex phase diagram is obtained for HEA superconductor.

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preprint2022arXiv

Fully automated spectroscopic ellipsometry analyses of crystalline-phase semiconductors based on a new algorithm

One significant drawback of a spectroscopic ellipsometry (SE) technique is its time-consuming and often complicated analysis procedure necessary to assess the optical functions of thin-film and bulk samples. Here, to solve this inherent problem of a traditional SE method, we present a new general way that allows full automation of SE analyses for crystalline-phase semiconductors exhibiting complex absorption features. In particular, we have modified a scheme established in our previous study, which performs a non-linear SE fitting analysis only in a low energy region at the beginning, while the analyzed energy region is gradually expanded toward higher energy by incorporating addition optical transition peaks. In this study, we have further developed a unique analyzing-energy search algorithm, in which a proper analyzing-energy region is determined to incorporate the feature of a new transition peak. In the developed method, a drastic improvement over the previous simple approach has been confirmed for expressing complex dielectric functions consisting of sharp and broad absorption peaks. The proposed method (Delta M method) has been applied successfully to analyze perovskite-based crystalline samples, including hybrid perovskite (CH3NH3PbI3) and chalcogenide perovskites (SrHfS3 and BaZrS3). In the automated analyses of these semiconductors, 7-8 transition peaks are introduced automatically to describe sample dielectric functions, while structural parameters, such as thin-film and roughness thicknesses, are also determined simultaneously. The established method can drastically reduce an analysis time to a level that allows the automatic inspection of daily varying material optical properties and expands the application area of spectroscopic ellipsometry considerably.

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preprint2022arXiv

High entropy van der Waals materials (Review article)

By breaking the restrictions on traditional alloying strategy, the high entropy concept has promoted the exploration of the central area of phase space, thus broadening the horizon of alloy exploitation. This review highlights the marriage of the high entropy concept and van der Waals systems to form a new family of materials category, namely the high entropy van der Waals materials (HEX, HE = high entropy, X= anion clusters) and describe the current issues and next challenges. The design strategy for HEX has integrated the local feature (e.g., composition, spin, and valence states) of structural units in high entropy materials and the holistic degrees of freedom (e.g., stacking, twisting, and intercalating species) in van der Waals materials, and has been successfully employed for the discovery of high entropy dichalcogenides, phosphorus tri-chalcogenides, halogens, and MXene. The rich combination and random distribution of the multiple metallic constituents on the nearly-regular 2D lattice give rise to a flexible platform to study the correlation features behind a range of selected physical properties, e.g., superconductivity, magnetism, and metal-insulator transition. The deliberate design of structural units and their stacking configuration can also create novel catalysts to enhance their performance in a bunch of chemical reactions.

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preprint2022arXiv

Unconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide

Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter physics and material science. In low-dimensional materials, unique electronic properties for these correlated states could significantly affect their optical properties. Herein, combining photoluminescence, optical reflection measurements and theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP$_2$), in which the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus$-$phosphorus chains and holes extended in two-dimensional SiP$_2$ layers. The excitonic state and the emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Within the $GW$ plus Bethe$-$Salpeter equation calculations and solving the generalized Holstein model non-perturbatively, we confirm that the observed sideband feature results from the correlated interaction between excitons and optical phonons. Such a layered material provides a new platform to study excitonic physics and many-particle effects.

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preprint2020arXiv

Heavily Hydride-ion-doped 1111-type Iron-based Superconductors: Synthesis, Physical Properties and Electronic Structure

Iron-based superconductors have grown to be a new continent of high Tc superconductors comparable to cuprates. The optimal critical temperature (Tc) of 56 K in electron-doped 1111-type iron oxypnictides attracts considerable attention of physicists and chemists. Carrier doping is not only essential to induce superconductivity but also is a critical parameter that governs the electronic, magnetic, and crystallographic properties of ground states in high-Tc superconductors. Hydride ion (H-) which is an anionic state of hydrogen acts as an efficient electron donor in the 1111-type, leading to several important discoveries such as two-dome structure of superconducting phase and bipartite parent phase. This article summarizes the synthesis, physical properties, and electronic structure of the H- bearing 1111-type iron-based superconductors along with the relevant phenomena of other superconductors. We show several common characteristics of iron-based superconductors with high-Tc over 50 K and suggest a way to achieve higher Tc.

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preprint2020arXiv

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$

Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflectance and Raman-scattering analysis to evaluate the electron transport governed by optical phonon scattering. A calculated room-temperature mobility on the order of $3.9 \times 10^2$ cm$^2$V$^{-1}$s$^{-1}$ is obtained, identifying cubic SrGeO$_3$ as one of the most promising TCOs. Employing classical phonon theory and a combined experimental-theoretical approach, a comprehensive analysis of the intrinsic electron mobility in the cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$, and SrTiO$_3$ is provided based on the magnitude of polarization and eigenfrequency of optically active phonons.

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preprint2020arXiv

Pressure-induced Topological and Structural Phase Transitions in an Antiferromagnetic Topological Insulator

Recently, natural van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states. In this work, we systematically investigate both the structural and electronic responses of MnBi2Te4 and MnBi4Te7 to external pressure. In addition to the suppression of antiferromagnetic order, MnBi2Te4 is found to undergo a metal-semiconductor-metal transition upon compression. The resistivity of MnBi4Te7 changes dramatically under high pressure and a non-monotonic evolution of \r{ho}(T) is observed. The nontrivial topology is proved to persists before the structural phase transition observed in the high-pressure regime. We find that the bulk and surface states respond differently to pressure, which is consistent with the non-monotonic change of the resistivity. Interestingly, a pressure-induced amorphous state is observed in MnBi2Te4, while two high pressure phase transitions are revealed in MnBi4Te7. Our combined theoretical and experimental research establishes MnBi2Te4 and MnBi4Te7 as highly tunable magnetic topological insulators, in which phase transitions and new ground states emerge upon compression.

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preprint2019arXiv

Near-room-temperature giant topological Hall effect in antiferromagnetic kagome metal YMn6Sn6

The kagome lattice, consisting of interconnected triangles and hexagons uniquely, is an excellent model system for study frustrated magnetism, electronic correlation and topological electronic structure. After an intensive investigation on frustrated magnetism in insulating magnetic kagome lattices, the interplay between charge and spin degrees of freedom via spin-orbital coupling in metallic systems (kagome metals) has become an attractive topic recently. Here, we study centrosymmetric YMn6Sn6 with Mn kagome lattice. We discover that it exhibits giant topological Hall effect near room temperature, ascribed to the field-induced non-collinear spin texture, possibly a skyrmion lattice (SkL) state. Combined with the large intrinsic anomalous Hall effect, YMn6Sn6 shows a synergic effect of real- and momentum-space Berry phase on physical properties. Since the features of tunable magnetic interaction and flexible structure in this large homologous series, it provides a novel platform for understanding the influence of electronic correlations on topological quantum states in both real and momentum spaces.

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preprint2017arXiv

Exploiting ITO colloidal nanocrystals for ultrafast pulse generation

Dynamical materials that capable of responding to optical stimuli have always been pursued for designing novel photonic devices and functionalities, of which the response speed and amplitude as well as integration adaptability and energy effectiveness are especially critical. Here we show ultrafast pulse generation by exploiting the ultrafast and sensitive nonlinear dynamical processes in tunably solution-processed colloidal epsilon-near-zero (ENZ) transparent conducting oxide (TCO) nanocrystals (NCs), of which the potential respond response speed is >2 THz and modulation depth is ~23% pumped at ~0.7 mJ/cm2, benefiting from the highly confined geometry in addition to the ENZ enhancement effect. These ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices.

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preprint2016arXiv

Electric field-induced superconducting transition of insulating FeSe thin film at 35 K

It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc cuprates. To induce a superconductor transition in an insulating phase, injection of a high density of carriers is needed (e.g., by impurity doping). An electric double-layer transistor (EDLT) with an ionic liquid gate insulator enables such a field-induced transition to be investigated and is expected to result in a high Tc because it is free from deterioration in structure and carrier transport that are in general caused by conventional carrier doping (e.g., chemical substitution). Here, for insulating epitaxial thin films (~10 nm thick) of FeSe, we report a high Tc of 35 K, which is four times higher than that of bulk FeSe, using an EDLT under application of a gate bias of +5.5 V. Hall effect measurements under the gate bias suggest that highly accumulated electron carrier in the channel, whose area density is estimated to be 1.4x10^15 cm-2 (the average volume density of 1.7x10^21 cm-3), is the origin of the high-Tc superconductivity. This result demonstrates that EDLTs are useful tools to explore the ultimate Tc for insulating parent materials.

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preprint2016arXiv

Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries

Thin films of the iron-based superconductor BaFe2(As1-xPx)2 (Ba122:P) were fabricated on polycrystalline metal-tape substrates with two kinds of in-plane grain boundary alignments (well aligned (4 deg.) and poorly aligned (8 deg.)) by pulsed laser deposition. The poorly aligned substrate is not applicable to cuprate-coated conductors because the in-plane alignment >4 deg. results in exponential decay of the critical current density (Jc). The Ba122:P film exhibited higher Jc at 4 K when grown on the poorly aligned substrate than on the well-aligned substrate even though the crystallinity was poorer. It was revealed that the misorientation angles of the poorly aligned samples were less than 6 deg., which are less than the critical angle of an iron-based superconductor, cobalt-doped BaFe2As2 (~9 deg.), and the observed strong pinning in the Ba122:P is attributed to the high-density grain boundaries with the misorientation angles smaller than the critical angle. This result reveals a distinct advantage over cuprate-coated conductors because well-aligned metal-tape substrates are not necessary for practical applications of the iron-based superconductors.

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preprint2016arXiv

Heavy Electron doping-induced antiferromagnetic phase as the parent for iron-oxypnictide superconductor LaFeAsO1-xHx

We perform transport measurements and band structure calculations of electron-doped LaFeAsO1-xHx over a wide range of x from 0.01 to 0.66. The T^2 and sqrt(T) dependency of the resistivity are observed at x ~ 0.17 and 0.41, respectively. The sign change of RH without opening of the spin-density-wave gap for 0.45 < x < 0.58 and T < TN as well as the calculated non-nested Fermi surface at x = 0.5 indicate the more localized nature of the AF2 as compared to spin density wave phase at non-doped sample. Considering the results from band calculations and the finite size of Hund' s rule coupling, the change of the normal conducting state with x is reasonably explained by a strong depression of the coherent scale owing to the increased effective Coulomb repulsion in the narrow anti-bonding 3dxy band that approaches the half-filled regime. The following transition from the paramagnet to AF2 is understood as the quenching or ordering of the less-screened spins with a large entropy at low temperature. These results suggest that the normal conducting properties over a wide doping range for the LaFeAsO1-xHx are strongly influenced by the local spins in the incoherent region. Thus, we conclude that the parent phase in LaFeAsO1-xHx is not the spin-density wave but the AF2, which may be primarily responsible for the singular superconducting properties of the 1111 type compared with other iron pnictides.

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preprint2016arXiv

Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2

We propose a novel solid-phase epitaxy technique applicable to high annealing temperatures up to 1000 C without re-vaporization of alkali metal elements with high vapor pressures. This technique is demonstrated through the successful growth of high-quality KFe2As2 epitaxial films. The key factors are employing a custom-designed alumina vessel/cover and sealing it in a stainless tube with a large amount of atmospheric KFe2As2 powder in tightly closed sample spaces. This technique can also be effective for other materials composed of elements with very high vapor pressures, such as alkali metals, and can lead to the realization of spintronics devices in the future using KFe2As2.

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preprint2015arXiv

Exploration of new superconductors and functional materials and fabrication of superconducting tapes and wires of iron pnictides

This paper reviews the highlights of a 4-years-long research project supported by the Japanese Government to explore new superconducting materials and relevant functional materials. The project found several tens of new superconductors by examining ~1000 materials, each of which was chosen by Japanese team member experts with a background in solid state chemistry. This review summarizes the major achievements of the project in newly found superconducting materials, and the wire and tape fabrication of iron-based superconductors. It is a unique feature of this review to incorporate a list of ~700 unsuccessful materials examined for superconductivity in the project. In addition, described are new functional materials and functionalities discovered during the project.

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preprint2015arXiv

Ferromagnetic instability of interlayer floating electrons in quasi-two-dimensional electride Y$_2$C

Ab initio electronic structure calculations show that the recently identified quasi-two-dimensional electride Y$_2$C is a weak itinerant ferromagnet or at least close to a ferromagnetic instability. The ferromagnetism is induced by the electride electrons, which are loosely bound around interstitial sites and overlap with each other to form two-dimensional interlayer conduction bands. The semimetallicity and two-dimensionality of the band structure are the key to understanding this ferromagnetic instability.

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preprint2015arXiv

Hydrogen-substituted superconductors SmFeAsO1-xHx misidentified as oxygen-deficient SmFeAsO1-x

We investigated the preferred electron dopants at the oxygen sites of 1111-type SmFeAsO by changing the atmospheres around the precursor with the composition of Sm:Fe:As:O = 1:1:1:1-x in high-pressure synthesis. Under H2O and H2 atmospheres, hydrogens derived from H2O or H2 molecules were introduced into the oxygen sites as a hydride ion, and SmFeAsO1-xHx was obtained. However, when the H2O and H2 sources were removed from the synthetic process, nearly stoichiometric SmFeAsO was obtained and the maximum amount of oxygen vacancies introduced remained x = 0.05(4). Density functional theory calculations indicated that substitution of hydrogen in the form of H- is more stable than the formation of an oxygen vacancy at the oxygen site of SmFeAsO. These results strongly imply that oxygen-deficient SmFeAsO1-x reported previously is SmFeAsO1-xHx with hydride ion incorporated unintentionally during high-pressure synthesis.

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preprint2015arXiv

Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Note: This paper has been published in Physical Chemistry Chemical Physics, which can be viewed at the following URL: http://doi.org/10.1039/C5CP03102H Cs2SnI6, a rarely studied perovskite variant material, is recently gaining a lot of interest in the field of photovoltaics owing to its nontoxity, air-stability and promissing photovoltaic properties. In this work, we report intrinsic defects in Cs2SnI6 using first-principles density functional theory calculations. It is revealed that iodine vacancy and tin interstitial are the dominant defects that are responsible for the intrinsic n-type conduction in Cs2SnI6. Tin vacancy has a very high formation energy (>3.6 eV) due to the strong covalency in the Sn-I bonds and is hardly generated for p-type doping. All the dominant defects in Cs2SnI6 have deep transition levels in the band gap. It is suggested that the formation of the deep defects can be suppressed significantly by employing an I-rich synthesis condition, which is inevitable for photovoltaic and other semiconductor applications.

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preprint2015arXiv

Iron-Based Superconductors: current status of materials and pairing mechanism

Since the discovery of high Tc iron-based superconductors in early 2008, more than 15,000 papers have been published as a result of intensive research. This paper describes the current status of iron-based superconductors (IBSC) covering most up-to-date research progress along with the some background research, focusing on materials (bulk and thin film) and pairing mechanism.

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preprint2015arXiv

Ligand-Hole in SnI6 Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6

This paper has been published in Bulletin of the Chemical Society of Japan, which can be viewed at the following URL: http://doi.org/10.1246/bcsj.20150110 Cs2SnI6, a variant of perovskite CsSnI3, is expected for a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I-, and Sn4+ ions and that the band gap is primarily made of occupied I- 5p6 valence band maximum (VBM) and unoccupied Sn4+ 5s conduction band minimum (CBM) similar to SnO2. In this work, we performed density functional theory (DFT) calculations and revealed that the real oxidation state of the Sn ion in Cs2SnI6 is +2 similar to CsSnI3. The +2 oxidation state of Sn originates from 2 ligand holes in the [SnI6]2- octahedron unit, where the ligand [I6] cluster has the apparent [I66-L+2]4- oxidation state, because the band gap is formed mainly by occupied I 5p VBM and unoccupied I 5p CBM. The +2 oxidation state of Sn and the band gap are originated from the intracluster hybridization and stabilized by the strong covalent interaction between Sn and I.

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preprint2015arXiv

n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route

Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb2+ for Sn2+ converted the majority carrier from hole to electron, and the free electron density ranged from 1012 to 1015 cm-3 with the largest electron mobility of 7.0 cm2/(Vs). The n-type conduction was confirmed further by the position of the Fermi level (EF) based on photoemission spectroscopy and electrical characteristics of pn heterojunctions. Density functional theory calculations reveal that the Pb substitution invokes a geometrical size effect that enlarges the interlayer distance and subsequently reduces the formation energies of Sn and Pb interstitials, which work as electron donors.

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preprint2015arXiv

Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins

Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is determined to be 0.23 eV from the intrinsic region of the tem-perature dependence of electrical conductivity. The origins of this narrow bandgap are discussed based on the chemi-cal bonding nature probed by 6 keV hard X-ray photoemission spectroscopy, hybrid density functional calculations, and the ligand theory. One origin is the direct As-As hybridization between adjacent [ZnAs] layers, which leads to a secondary splitting of As 4p levels and raises the valence band maximum. The other is that the non-bonding Ba 5dx2-y2 orbitals form unexpectedly deep conduction band minimum (CBM) in beta-BaZn2As2 although the CBM of LaZnAsO is formed mainly of Zn 4s. These two origins provide a quantitative explanation for the bandgap difference between beta-BaZn2As2 and LaZnAsO.

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preprint2015arXiv

Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains

In quasi-one-dimensional (quasi-1D) system, the charge density wave (CDW) transition temperature TCDW is usually lower than the mean-field-theory predicted TMF and a CDW fluctuation region exists between them. Here, we investigate the physical properties of PdTeI single crystal containing quasi-1D PdTe chains. Surprisingly, we find that the carrier concentration decreases gradually before the long-range CDW ordering state occurring at T1 ~ 110 K, reflecting the existence of strong CDW fluctuation with possible pseudogap state at T >> T1 because of dynamic charge separation of Pd ions (Pd3+ -> Pd2+ + Pd4+). Moreover, the sliding CDW state appears below T2 ~ 6 K. Combined such low T2 with the feature of multiple quasi-1D bands, PdTeI exhibits exotic crossover behavior from negative to huge positive magnetoresistance under magnetic field and field-induced localization. Thus, PdTeI provides a novel platform for studying the CDW fluctuation and the interplay between magnetic field and CDW state.

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preprint2015arXiv

Superconductivity at 52 K in hydrogen-substituted LaFeAsO1-xHx under high pressure

The 1111-type iron-based superconductor LnFeAsO1-xFx (Ln stands for lanthanide) is the first material with a Tc above 50 K, other than cuprate superconductors. Electron doping into LaFeAsO by H, rather than F, revealed a double-dome-shaped Tc-x diagram, with a first dome (SC1, 0.05<x<0.20) and a second dome (SC2, 0.2<x<0.5). Here, we report the Tc for the whole hydrogen-doping range in LaFeAsO1-xHx under pressures of up to 19 GPa. Tc rises to 52 K at 6 GPa for the Tc-valley composition between the two Tc domes. This is the first instance of the Tc exceeding 50 K in La-1111-type iron-based superconductors. On the other hand, the Tc of SmFeAsO1-xHx decreased continually, keeping its single-dome structure up to 15 GPa. The present findings strongly suggest that the main reason for realization of the Tc >50 K observed in RE-1111 compounds (RE: Pr, Sm, and Gd) at ambient pressure is the merging of SC1 and SC2.

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preprint2015arXiv

Superconductivity in Room Temperature Stable electride and high-pressure phases of alkali metals

S-band metals such as alkali and alkaline earth metals do not undergo a superconducting transition (SCT) at an ambient pressure, but their high-pressure phases do. In contrast, room temperature stable electride electride (C12A7:e-) in which anionic electrons in the crystallographic sub-nanometer-size cages have high s-character exhibits SCT at 0.2-0.4K at an ambient pressure. In this paper we report that crystal and electronic structure of C12A7:e- are close to those of the high pressure superconducting phase of alkali and alkaline earth metals and the SCT of both materials is induced when electron nature at Fermi energy (EF) switches from s- to sd-hybridized state.

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preprint2014arXiv

Bipartite magnetic parent phases in the iron-oxypnictide superconductor

High-temperature (high-$T_{\rm c}$) superconductivity appears as a consequence of the carrier-doping of an undoped parent compound exhibiting antiferromagnetic order; thereby, ground-state properties of the parent compound are closely relevant to the superconducting state. On the basis of the concept, a spin-fluctuation has been addressed as an origin of pairing of the superconducting electrons in cuprates. Whereas, there is growing interest in the pairing mechanism such as an unconventional spin-fluctuation or an advanced orbital-fluctuation due to the characteristic multi-orbital system in iron-pnictides. Here, we report the discovery of an antiferromagnetic order as well as a unique structural transition in electron-overdoped LaFeAsO$_{1-x}$H$_x$ ($x$ ~ 0.5), whereby another parent phase was uncovered, albeit heavily doped. The unprecedented two-dome superconducting phases observed in this material can be interpreted as a consequence of the carrier-doping starting from the original at $x\sim0$ and advanced at $x\sim0.5$ parent phases toward the intermediate region. The bipartite parent phases with distinct physical properties in the second magnetic phase provide us with an interesting example to illustrate the intimate interplay among the magnetic interaction, structural change and orbital degree of freedom in iron-pnictides.

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preprint2014arXiv

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm2 irrespective of the laser wavelength.

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preprint2014arXiv

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2

A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 insulating epitaxial film with an atomically flat surface and examined its electrostatic carrier doping using an electric double-layer transistor (EDLT) structure with an ionic liquid gate. The positive gate voltage gave conductance modulation of three orders of magnitude at 25 K, and further induced and manipulated a phase transition; i.e., delocalized carrier generation by electrostatic doping is the origin of the phase transition. This is the first demonstration, to the authors' knowledge, of an EDLT using a Mott insulator iron-selenide channel and opens a way to explore high-Tc superconductivity in iron-based layered materials, where carrier doping by conventional chemical means is difficult.

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preprint2014arXiv

Emergence of magnetism and controlling factors of superconductivity in Li/Na-ammonia co-intercalated FeSe1-zTez

The discovery of superconductivity in alkali-ammonia co-intercalated FeSe has generated intensive interest because of their highest Tc (~ 45 K) among iron-chalcogenide superconductors with bulk form. Here, we report the phase diagrams of two series of Li/Na-ammonia co-intercalated FeSe1-zTez. When superconductivity is suppressed by Te doping, the magnetic ordering states are emergent. Moreover, a novel phase Lix(NH3)yFe2-δTe2 with possible antiferromagnetism is discovered. This strongly indicates the intimate relation between superconductivity and magnetism in these materials, like in other iron-based superconductors. On the other hand, comparative structure analysis with FeSe1-zTez suggests that although there is remarkable similarity in phase diagrams for both iron-chalcogenide and iron-pnictide superconductors, the different types of anions with different charges lead to the dissimilar controlling factors in superconductivity for both classes of materials. This opens up an opportunity to tune the superconductivity in iron-chalcogenide superconductors in more ways than just one.

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preprint2014arXiv

Enhancing the three-dimensional electronic structure in 1111-type iron arsenide superconductors by H-substitution

The 1111-type iron arsenide hydride CaFe1-xCoxAsH was synthesized by high-pressure solid-state reaction, and its electronic structure and superconducting properties were investigated. Bulk superconductivity was observed at x = 0.07-0.26. A maximum superconducting critical temperature Tcmax of 23 K was observed at x = 0.07. These values are in agreement with those of CaFe1-xCoxAsF. The calculated Fermi surface of CaFeAsH has a small three-dimensional 3D hole pocket around the Gamma point. This is a result of weak covalent bonding between the As 4p and H 1s orbitals. No such covalency exists in CaFeAsF, because the energy level of the F 2p orbital is sufficiently deep to inhibit overlap with the As 4p orbital. The similar superconducting properties of CaFe1-xCoxAsH and CaFe1-xCoxAsF are explained on the nesting scenario. The small 3D hole pocket of CaFe1-xCoxAsH does not significantly contribute to electron excitation. These findings encourage exploration of hydrogen-containing 1111-type iron-based materials with lower anisotropies and higher Tc applicable to superconducting wires and tapes.

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preprint2014arXiv

High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers

We report herein a high and isotropic critical-current density Jc for BaFe2(As,P)2 epitaxial films. The isotropy of Jc with respect to the magnetic-field direction was improved significantly by decreasing the film growth rate to 2.2 Å/s. The low growth rate served to preferentially align dislocations along the c-axis, which work well as c-axis vortex-pinning centers. Because of the intentional introduction of effective pinning, the absolute Jc at 9 T was larger than that obtained for other iron-based superconductors and conventional alloy superconducting wires.

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preprint2014arXiv

Hydrogen Ordering and New Polymorph of Layered Perovskite Oxyhydrides: Sr2VO4-xHx

Compositionally tunable vanadium oxyhydrides Sr2VO4-xHx (x = 0 - 1) without considerable anion vacancy were synthesized by high-pressure solid state reaction. The crystal structures and their properties were characterized by powder neutron diffraction, synchrotron X-ray diffraction, thermal desorption spectroscopy, and first-principles density functional theory (DFT) calculations. The hydrogen anions selectively replaced equatorial oxygen sites in the VO6 layers via statistical substitution of hydrogen in the low x region (x < 0.2). A new orthorhombic phase (Immm) with an almost entirely hydrogen-ordered structure formed from the K2NiF4-type tetragonal phase with x > 0.7. Based on the DFT calculations, the degree of oxygen/hydrogen anion ordering is strongly correlated with the bonding interaction between vanadium and the ligands.

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preprint2014arXiv

La-substituted CaFeAsH superconductor with Tc = 47 K

La-substituted CaFeAsH,(Ca1-xLax)FeAsH, were synthesized by the solid state reaction at 1173 K under high pressure of 2.5 GPa. The r-T anomaly corresponding to tetragonal to orthorhombic structural transition was suppressed by La-substitution and then the superconductivity was observed at an electron doping content of Ne > 0.05. The maximum onset Tc of 47.4 K was reached for Ne = 0.18, which is significant increase compared to 23 K achieved by direct electron doping to the FeAs-layer via Co-substitution to the Fe-site. This value of Tc value fits well to the phenomenological relation between Tc and the bond angle of As-Fe-As in indirectly electron doped LnFeAsO (Ln = Lanthanide). These results indicate that the electron was doped via the indirect mode through the aliovalent ion substitution to CaH-layer (Ca2+ La3+ + e-).

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preprint2014arXiv

Layered Compounds BaM2Ge4Ch6 (M = Rh, Ir and Ch = S, Se) with Pyrite-Type Building Blocks and Ge-Ch Heteromolecule-Like Anions

Structure and chemical features of layered compounds BaM2Ge4Ch6 (M = Rh, Ir; Ch = S, Se) synthesized under high-pressure and high-temperature method are systematically studied. These compounds crystallize in an orthorhombic phase with space group Pbca (No. 61). The remarkable structural feature is to have the M-Ge-Ch pyrite-type building units, stacking with Ba-Ch layers alternatively along c axis. It is very rare and novel that pyrite-type subunits as the building blocks in the layered compounds. Theoretical calculations and experimental results indicate that there are strongly polarized covalent bonds between Ge and Ch atoms, forming heteromolecule-like anions in these compounds. Moreover, Ge atoms in this structure exhibit unusual valence state (~ +1) due to the tetrahedral coordination environment of Ge atoms along with M and Ch atoms simultaneously.

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preprint2014arXiv

Model of the Electronic Structure of Electron-Doped Iron-Based Superconductors: Evidence for Enhanced Spin Fluctuations by Diagonal Electron Hopping

We present a theoretical understanding of the superconducting phase diagram of the electron-doped iron pnictides. We show that, besides the Fermi surface nesting, a peculiar motion of electrons, where the next nearest neighbor (diagonal) hoppings between iron sites dominate over the nearest neighbor ones, plays an important role in the enhancement of the spin fluctuation and thus superconductivity. In the highest $T_c$ materials, the crossover between the Fermi surface nesting and this "prioritized diagonal motion" regime occurs smoothly with doping, while in relatively low $T_c$ materials, the two regimes are separated and therefore results in a double dome $T_c$ phase diagram.

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preprint2014arXiv

Superconductivity and phase instability of NH3-free Na-intercalated FeSe1-zSz

The discovery of ThCr2Si2-type AxFe2-ySe2 (A = K, Rb, Cs and Tl) with Tc ~ 30K make much progress in iron-based superconducting field, but their multiple-phase separations are disadvantageous for understanding the origin. On the other hand, for small alkali metals, studies on (Li,Na)FeCu(S,Se)2 and NaFe2-δS2 shows that these compounds possess CaAl2Si2-type structure, implying that ThCr2Si2-type structure is unstable for small alkali-metal intercalated FeSe under high-temperature. Here we report a new intercalate Na0.65(1)Fe1.93(1)Se2 with Tc ~ 37 K, synthesized by low-temperature ammonothermal method. The notable finding is that the Na0.65(1)Fe1.93(1)Se2 shows a ThCr2Si2-type structure, which is the first instance of small-sized alkali metal intercalates without NH3 co-intercalation. Besides, the NH3-poor Na0.80(4)(NH3)0.60Fe1.86(1)Se2 and NH3-rich phase with Tcs at 45 K and 42 K are identified by tuning the concentration of Na-NH3 solutions. The modulation of interlayer spacing reveals the versatile evolution of structural stability and superconductivity in these intercalates.

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preprint2014arXiv

Superconductivity of Ca2InN with a layered structure embedding an anionic indium chain array

We report the emergence of superconductivity in Ca2InN consisting of a 2-dimensional (2D) array of zigzag indium chains embedded between Ca2N layers. A sudden drop of resistivity and a specific-heat (Cp) jump attributed to the superconducting transition were observed at 0.6 K. The Sommerfeld coefficient γ= 4.24 mJ/mol K2 and Debye temperature ΘD = 322 K were determined from the Cp of the normal conducting state and the superconducting volume fraction was estimated to be ~80% from the Cp jump, assuming a BCS-type weak coupling. Density functional theory calculations demonstrated that the electronic bands near the Fermi level (EF) are mainly derived from In 5p orbitals with π and σ bonding states and the Fermi surface is composed of cylindrical parts, corresponding to the quasi-2D electronic state of the In chain array. By integrating the projected density of states of In-p component up to EF, a valence electron population of ~1.6 electrons/In was calculated, indicating that the partially anionic state of In. The In 3d binding energies observed in Ca2InN by x-ray photoemission spectroscopy were negatively shifted from that in In metal. The superconductivity of Ca2InN is associated with the p-p bonding states of the anionic In layer.

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preprint2013arXiv

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm2

The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρxy and the longitudinal resistivity ρxx follow power law scaling ρxy = Aρxxβ. In the temperature-sweep with a fixed field (T sweep), all of the β values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the β values in the magnetic-field sweep with a fixed temperature (H sweep) change from 1.8 to 2.0 as the temperature increases from 13 to 16 K even in the T/H region that overlaps with the T sweep measurements. These results indicate that the vortices introduced at low temperatures are trapped by strong pinning centers, but a portion of the vortices introduced at high temperatures are not strongly trapped by the pinning centers. The sign of ρxy is negative, and a sign reversal is not detected. These distinct scaling behaviors, which sharply contrast cuprates and MgB2, are explained by high-density c-axis pinning centers in the Ba(Fe1-xCox)2As2 epitaxial film and are consistent with a wider vortex liquid phase.

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preprint2013arXiv

Controlling Factors of Tc-Dome Structure in 1111-Type Iron Arsenide Superconductors

We investigated the effects of phosphorus substitution on the shape of the Tc(x) dome in 1111-type SmFeAs1-yPyO1-xHx (0 < x < 0.5). Hydride ion substitution of oxide sites (O2- -> H-) exerts a chemical pressure effect, i.e., a structural reduction of the Pn-Fe-Pn angle α (Pn = P, As) and also dopes electrons into the FePn layer to induce superconductivity. Isovalent phosphorus substitution (P3- -> As3-) can induce only a chemical pressure effect, i.e., an increase of α for La-substitution of Sm-sites. As y increases from 0.0 to 0.5, the single Tc dome gradually splits into two domes, similar to those of LaFeAsO1-xHx with a Tc valley at x ~ 0.16. We found that the Tc valley is located around (x, α) ~ (0.16, 113°) for both SmFeAs1-yPyO1-xHx and LaFeAsO1-xHx series, irrespective of changes in the Pn anion and Ln cation species. This result suggests that suppression of Tc leads to the emergence of a Tc valley when both the shape of FePn4 tetrahedra represented by α and electron doping level of x meet the above criterion in 1111 type iron oxypnictide superconductors.

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preprint2013arXiv

Epitaxial Growth and Electronic Structure of a Layered Zinc Pnictide Semiconductor, beta-BaZn2As2

BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2 were grown on single-crystal MgO (001) substrates by a reactive solid-phase epitaxy technique. Out-of-plane and in-plane epitaxial relationships between the film and the substrate were BaZn2As2 (00l)//MgO (001) and BaZn2As2 [200]//MgO [200], respectively. The full-widths at half maximum were 0.082o for a 008 out-of-plane rocking curve and 0.342o for a 200 in-plane rocking curve. A step-and-terrace structure was observed by atomic force microscopy. The band gap of beta-BaZn2As2 was evaluated to be around 0.2 eV, which is much smaller than that of a family compound LaZnOAs (1.5 eV). Density functional theory calculation using the Heyd-Scuseria-Ernzerhof hybrid functionals supports the small band gap.

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preprint2013arXiv

Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films

The effect of electron doping by trivalent charge state rare-earth ion (RE = La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 was examined using epitaxial films. Each of the RE substitutions suppressed the resistivity anomaly associated with the magnetic/structural phase transitions, leading to the resistivity drops and superconductivity transitions. Bulk superconductivity was observed at the maximum onset critical temperature (Tconset) of 22.4 K for La-doping and 13.4 K for Ce-doping, while only broad resistivity drops were observed at 6.2 K for Pr-doping and 5.8 K for Nd-doping but neither zero resistivity nor distinct Meissner effect were observed at least down to 2 K. The decrease in Tconset with increasing the number of RE 4f electrons cannot be explained in terms of the crystalline qualities or crystallographic structure parameters of the BaFe2As2 films. It was clarified, based on resistivity-temperature analyses, that magnetic scattering became increasingly significant in the above order of the RE dopants. The negative magnetoresistance was enhanced by the Ce- and Pr-doping, implying that the decrease in Tc originates from magnetic pair breaking by interaction of the localized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals.

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preprint2013arXiv

Robust spin fluctuations and $s\pm$ pairing in the heavily electron doped iron-based superconductors

We theoretically study the spin fluctuation and superconductivity in La1111 and Sm1111 iron-based superconductors for a wide range of electron doping. When we take into account the band structure variation by electron doping, the hole Fermi surface originating from the $d_{X^2-Y^2}$ orbital turns out to be robust against electron doping, and this gives rise to large spin fluctuations and consequently $s\pm$ pairing even in the heavily doped regime. The stable hole Fermi surface is larger for Sm1111 than for La1111, which can be considered as the origin of the apparent difference in the phase diagram.

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preprint2013arXiv

Structural, Magnetic, and Electrical Properties of Li2Ir1-xRuxO3

The crystal structure, resistivity, and magnetic susceptibility of the Li2Ir1-xRuxO3 (x = 0-1) polycrystals have been investigated. We found that the parent antiferromagnetic phase disappears for x > 0.2 and bond dimers appear in the averaged structure for x > 0.5 and likely fluctuate for much smaller x. Unexpectedly, this system remains insulating for all the doping levels, in sharp contrast with the robust metallic state found in Sr2Ir1-xRuxO4. These results demonstrate that the essential physics of the doped A2IrO3 (A = Li, Na) system deviates significantly from the common one-band jeff=1/2 spin-orbit model.

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preprint2013arXiv

Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition

A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that the difference in the electron doping sites does not influence the superconducting properties of 122-type SrFe2As2.

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preprint2013arXiv

Superconductivity in 1111-type CaFeAsF1-xHx induced by selective hydrogen elimination

The difference in thermal stability of F- and H- in 1111-type iron based superconductors, allows selective hydrogen elimination from non-superconductive CaFeAsF0.8H0.2 by thermal annealing. The analyzed chemical composition of the resulting samples indicates that incorporated hydrogen was selectively eliminated by thermal annealing at 553 K for 72 hours. The resulting hydrogen-eliminated sample shows bulk superconductivity with Tc = 29 K. This technique may be used for indirect electron doping for AeFeAeF (Ae; alkali-earth metal) iron based superconductor described by CaFeAsF1-xHx => CaFeAsF1-x + xe- + 1/2xH2.

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preprint2013arXiv

Switching of intra-orbital spin excitations in electron-doped iron pnictide superconductors

We investigate the doping dependence of the magnetic excitations in two-superconducting-dome-system LaFeAsO1-xDx. Using inelastic neutron scattering, spin fluctuations at different wavenumbers were observed under both superconducting domes around x = 0.1 and 0.4, but vanished at x = 0.2 corresponding to the Tc valley. Theoretical calculations indicate that the characteristic doping dependence of spin fluctuations is rationally explained as a consequence of the switching of the two intra-orbital nestings within Fe-3dYZ, ZX and 3dX2-Y2 by electron doping. The present results imply that the multi-orbital nature plays an important role in the doping and / or material dependence of the Tc of the iron pnictide superconductors.

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preprint2013arXiv

Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films

Applying an external pressure to indirectly electron-doped 122-type (Ba1-xLax)Fe2As2 epitaxial films enhances the superconducting critical temperature (Tc) up to 30.3 K. Different from the other family compounds, the Tc is enhanced not only in the under-doped region but also in the optimally doped and over-doped regions. Narrowing of the superconducting transition width and an increase in the carrier density take place simultaneously in the whole doping region, except at the heavily over-doped limit. This characteristic is unique to and observed only in (Ba1-xLax)Fe2As2, in which the La doping is stabilized via non-equilibrium growth of the vapor phase epitaxy, among the 122-type iron-based superconductors, AFe2As2 (A = Ba, Sr, and Ca).

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preprint2012arXiv

Enhanced anisotropic spin fluctuations below tetragonal-to-orthorhombic transition in LaFeAs(O_{1-x}F_x) probed by ^{75}As and ^{139}La NMR

$^{75}$As and $^{139}$La NMR results of LaFeAs(O$_{1-x}$F$_x$) ($x$=0, 0.025, and 0.04) were reported. Upon F-doping, the tetragonal-to-orthorhombic structural phase transition temperature $T_S$, antiferromagnetic transition temperature $T_N$ and internal magnetic field $μ_0H_{\rm int}$ are gradually reduced for $x<0.04$. However, at $x=0.04$, $T_N$ is abruptly suppressed to be 30 K along with a tiny $μ_0H_{\rm int}$, which is distinct from the continuous disappearance of the ordered phases in the Ba122 systems of Ba(Fe,Co)$_2$As$_2$ and BaFe$_2$(As,P)$_2$. The anisotropy of the spin-lattice relaxation rate $T_1^{-1}$, $(T_1)^{-1}_{H\parallel ab}/(T_1)^{-1}_{H\parallel c}$, in the paramagnetic phase of $x = 0$ and 0.025 is constant ($\sim 1.5$), but increases abruptly below $T_S$ due to the enhancement of $(T_1)^{-1}_{H\parallel ab}$ by the slowing down of magnetic fluctuations. This indicates that the tetragonal-to-orthorhombic structural distortion enhances the anisotropy in the spin space via magnetoelastic coupling and/or spin-orbit interaction.

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preprint2012arXiv

Ferroelectricity Driven by Twisting of Silicate Tetrahedral Chains

Conventional perovskite-type ferroelectrics are based on octahedral units of oxygen, and often comprise toxic Pb to achieve robust ferroelectricity. Here, we report the ferroelectricity in a silicate-based compound, Bi2SiO5 (BSO), induced by a structural instability of the corresponding silicate tetrahedral chains. A low-energy phonon mode condenses at ~ 673 K to induce the proper ferroelectric phase transition. Polarization switching was observed in a BSO single crystal with a coercive field of 30 kV/cm and a spontaneous polarization of 0.3 microC/cm2 along a direction normal to the cleavage plane. The in-plane polarization was estimated by first principles calculations to be 23 microC/cm2. The present findings provide a new guideline for designing ferroelectric materials based on SiO4 tetrahedral units, which is ubiquitously found in natural minerals.

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preprint2012arXiv

Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films

Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film growth process. The substitution with La was substantiated by a systematic shrinkage of the c-axis lattice parameter due to the smaller ionic radius of La3+ than that of Ba2+. A negative Hall coefficient indicated that the majority carriers were electrons, as is consistent with this aliovalent ion doping. The La substitution suppressed an antiferromagnetic transition and induced bulk superconductivity at a maximum onset critical temperature (Tc) of 22.4 K. The electronic phase diagram for (Ba1-xLax)Fe2As2 was built, which revealed that the indirect electron doping at the Ba site with La [(Ba1-xLax)Fe2As2] exhibits almost the same Tc - doping level relation as that of the direct electron-doping at the Fe site with Co [Ba(Fe1-xCox)2As2]. This finding clarified that Tc in 122-type compounds is not affected by a crystallographic doping site, which is in sharp contrast to the 1111-type compounds, REFeAsO (RE = rare earth). It is tentatively attributed to the differences in their dimensionality of electronic structures and electron pairing symmetries.

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preprint2012arXiv

Superconductivity in defective pyrite-type iridium chalcogenides IrxCh2 (Ch = Se and Te)

We report superconductivity in defective pyrite-type iridium chalcogenides IrxCh2. Maximum values of Tc of 6.4 K for Ir0.91Se2 and 4.7 K for Ir0.93Te2 were observed. It was found that Ir0.75Ch2 is close to the boundary between metallic and insulating states and IrxCh2 systems undergo nonmetal to metal transitions as x increases. On the basis of density functional theory calculations and the observed large variation in the Ch-Ch distance with x, we suggest that Ir0.75Ch2 is the parent compound for the present superconductors.

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preprint2012arXiv

Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1--xCox)2As2 (AE = alkaline earth)

This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet laser as an excitation source. The most critical parameter to produce the SrFe2As2:Co and BaFe2As2:Co phases is the substrate temperature (Ts). It is difficult to produce highly-pure CaFe2As2:Co phase thin film at any Ts. For BaFe2As2:Co epitaxial films, controlling Ts at 800-850 °C and growth rate to 2.8-3.3 Å/s produced high-quality films with good crystallinity, flat surfaces, and high critical current densities > 1 MA/cm2, which were obtained for film thicknesses from 100 to 500 nm. The doping concentration x was optimized for Ba(Fe1-xCox)2As2 epitaxial films, leading to the highest critical temperature of 25.5 K in the epitaxial films with the nominal x = 0.075.

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preprint2012arXiv

Two-dome structure in electron-doped iron arsenide superconductors

Iron arsenide superconductors based on the material LaFeAsO1-xFx are characterized by a two-dimensional Fermi surface (FS) consisting of hole and electron pockets yielding structural and antiferromagnetic transitions at x = 0. Electron doping by substituting O2- with F- suppresses these transitions and gives rise to superconductivity with a maximum Tc = 26 K at x = 0.1. However, the over-doped region cannot be accessed due to the poor solubility of F- above x = 0.2. Here we overcome this problem by doping LaFeAsO with hydrogen. We report the phase diagram of LaFeAsO1-xHx (x < 0.53) and, in addition to the conventional superconducting dome seen in LaFeAsO1-xFx, we find a second dome in the range 0.21 < x < 0.53, with a maximum Tc of 36 K at x = 0.3. Density functional theory calculations reveal that the three Fe 3d bands (xy, yz, zx) become degenerate at x = 0.36, whereas the FS nesting is weakened monotonically with x. These results imply that the band degeneracy has an important role to induce high Tc.

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preprint2012arXiv

Ultralow-dissipative conductivity by Dirac fermions in BaFe$_2$As$_2$

We report on the anomalous behavior of the complex conductivity of BaFe$_{2}$As$_{2}$, which is related to the Dirac cone, in the terahertz (THz)-frequency region. Above the spin-density-wave (SDW) transition temperature, the conductivity spectra follow the Drude model. In the SDW state, the imaginary part of the complex conductivity, $σ_2$, is suppressed in comparison to that expected according to the Drude model. The real part, $σ_1$, exhibits nearly Drude-like behavior. This behavior (i.e., almost no changes in $σ_1$ and the depression of $σ_2$) can be regarded as the addition of extra conductivity without any dissipations in the Drude-type conductivity. The origin of this ultralow-dissipative conductivity is found to be due to conductivity contribution from quasiparticles within the Dirac cone. In other words, we are able to observe the dynamics of Dirac fermions through the conductivity spectra of BaFe$_2$As$_2$, clearly and directly.

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preprint2011arXiv

Advantageous grain boundaries in iron pnictide superconductors

High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High critical temperature iron pnictide superconductors have advantages over cuprates with respect to these grain boundary issues. The transport properties through well-defined bicrystal grain boundary junctions with various misorientation angles (thetaGB) were systematically investigated for cobalt-doped BaFe2As2 (BaFe2As2:Co) epitaxial films fabricated on bicrystal substrates. The critical current density through bicrystal grain boundary (JcBGB) remained high (> 1 MA/cm2) and nearly constant up to a critical angle thetac of ~9o, which is substantially larger than the thetac of ~5o for YBCO. Even at thetaGB > thetac, the decay of JcBGB was much smaller than that of YBCO.

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preprint2011arXiv

Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates

High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layers (delta fai MgO = 7.3o), and exhibited high self-field Jc up to 3.5 MA/cm2 at 2 K. These values are comparable to that on MgO single crystals and the highest Jc among iron pnictide superconducting tapes and wires ever reported. High in-field Jc suggests the existence of c-axis correlated vortex pinning centers.

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preprint2011arXiv

Coexistence of light and heavy carriers associated with superconductivity and anti-ferromagnetism in CeNi0.8Bi2 with a Bi square net

We found that the ZrCuSiAs-type crystal CeNi0.8Bi2 with a layered structure composed of alternate stacking of [CeNixBi(1)]δ+ and Bi(2)δ- exhibits a superconductive transition at ~4 K, which was confirmed by zero resistance and the Meissner effect (shielding volume faction ~100% at 2 K). Heat capacity measurements revealed that the electron mass at the normal state (>5 K) is heavy (γ = 0.4 J mol-1 K-2) and a peak responsible for the anti-ferromagnetic ordering of Ce3+ 4f1 at ~5 K. These results indicate that there are two types of carriers with notable different masses, i.e., a light electron responsible for superconductivity and a heavy electron interacting with the Ce 4f electron. This observation suggests that 6p electrons of Bi(2) forming the square net and electrons in CeNixBi(1) layers primarily correspond to light and heavy electrons, respectively.

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preprint2011arXiv

Hydrogen in layered iron arsenide: indirect electron doping to induce superconductivity

Utilizing the high stability of calcium and rare earth hydrides, CaFeAsF1-xHx (x = 0.0-1.0) and SmFeAsO1-xHx (x = 0.0-0.47) have been first synthesized using high pressure to form hydrogen-substituted 1111 type iron-arsenide superconductors. Neutron diffraction and density functional calculations have demonstrated that the hydrogens are incorporated as H- ions occupying F- sites in the blocking layer of CaFeAsF. The resulting CaFeAsF1-xHx is non-superconducting, whereas SmFeAsO1-xHx is a superconductor, with an optimal Tc = 55 K at x 0.2. It was found that up to 40% of the O2- ions can be replaced by H- ions, with electrons being supplied into the FeAs-layer to maintain neutrality (O2- = H-+ e-). When x exceeded 0.2, Tc was reduced corresponding to an electron over-doped region.

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preprint2011arXiv

LaCo2B2: A Co-based layered superconductor with a ThCr2Si2-type structure

LaCo2B2 with a ThCr2Si2-type structure composed of alternately stacked La and CoB layers exhibits metallic electrical conductivity and Pauli paramagnetic behavior down to 2K. Bulk superconductivity with a Tc of ~4K emerges upon substitution with dopant elements; i.e., isovalent substitution to form (La1-xYx)Co2B2, or aliovalent substitution to form La(Co1-xFex)2B2. Highly covalent bonding between Co 3d and B 2p levels in the CoB layers, which is caused by the B 2p level being shallower than the Fermi level, removes magnetic ordering from Co 3d electrons even in the undoped samples.

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preprint2011arXiv

Thin Film Growth and Device Fabrication of Iron-Based Superconductors

Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, device fabrication, and relevant bulk material properties.

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preprint2011arXiv

Unusually large enhancement of thermopower in an electric field induced two-dimensional electron gas

Two-dimensionally confined electrons showing unusually large thermopower (S) have attracted attention as a potential approach for developing high performance thermoelectric materials. However, enhanced S has never been observed in electric field induced two-dimensional electron gas (2DEG). Here we demonstrate electric field modulation of S for a field effect transistor (FET) fabricated on a SrTiO3 crystal using a water-infiltrated nanoporous glass as the gate insulator. An electric field application confined carrier electrons up to ~2E15 /cm^2 in an extremely thin (~2 nm) 2DEG. Unusually large enhancement of |S| was observed when the sheet carrier concentration exceeded 2.5E14 /cm^2, and it modulated from ~600 (~2E15 /cm^2) to ~950 μV/K (~8E14 /cm^2), which were approximately five times larger than those of the bulk, clearly demonstrating that an electric field induced 2DEG provides unusually large enhancement of |S|.

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preprint2010arXiv

DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary.

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preprint2010arXiv

Electronic and Magnetic Phase Diagram of a Superconductor, SmFeAsO1-xFx

A crystallographic and magnetic phase diagram of SmFeAsO1-xFx is determined as a function of x in terms of temperature based on electrical transport and magnetization, synchrotron powder x-ray diffraction, 57Fe Mossbauer spectra (MS), and 149Sm nuclear resonant forward scattering (NRFS) measurements. MS revealed that the magnetic moments of Fe were aligned antiferromagnetically at ~144 K (TN(Fe)). The magnetic moment of Fe (MFe) is estimated to be 0.34 myuB/Fe at 4.2 K for undoped SmFeAsO; MFe is quenched in superconducting F-doped SmFeAsO. 149Sm NRFS spectra revealed that the magnetic moments of Sm start to order antiferromagnetically at 5.6 K (undoped) and 4.4 K (TN(Sm)) (x = 0.069). Results clearly indicate that the antiferromagnetic Sm sublattice coexists with the superconducting phase in SmFeAsO1-xFx below TN(Sm), while antiferromagnetic Fe sublattice does not coexist with the superconducting phase.

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preprint2010arXiv

Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal

Here we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from an insulator to metal. We fabricated the field effect transistor structure on an oxide semiconductor, SrTiO3, using 100%-water-infiltrated nanoporous glass - amorphous 12CaO*7Al2O3 - as the gate insulator. For positive gate voltage, electron accumulation, water electrolysis and electrochemical reduction occur successively on the SrTiO3 surface at room temperature, leading to the formation of a thin (~3 nm) metal layer with an extremely high electron concentration of 10^15-10^16 cm^-2, which exhibits exotic thermoelectric behaviour.

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preprint2010arXiv

High Pressure Synthesis of Indirectly electron-doped 122 Iron Superconductor Sr1-xLaxFe2As2 with a maximum Tc = 22 K

Compounds of Sr1-xLaxFe2As2 were synthesized by solid state reaction at 1273 K, under pressures of 2 or 3 GPa. The Sr1-xLaxFe2As2 phase was dominant up to x = 0.5, and superconductivity was observed at $x \ge 0.2$. A maximum critical temperature Tc of 22 K, and a maximum shielding volume fraction of ~70 % were obtained at x = 0.4. This is the first experimental demonstration of electron-doped superconductivity in 122-type iron pnictides, where electrons were doped through aliovalent substitution at the site of the alkaline earth metal. The optimal Tc was slightly higher than that for the Co-doped (directly electron-doped) samples (19 K), and much lower than that for the hole-doped case (37 K). The bulk superconductivity range was narrower than that for the Co-substituted case, and both ranges were much narrower than that for the hole-doped case. These observations revealed that differences in the electron-doping mode (direct or indirect) did not have a prominent effect on the optimal Tc or superconductivity range, compared with differences in carrier polarity.

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preprint2010arXiv

Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La, Sr)(Al, Ta)O3 bicrystal substrates

Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10m-wide microbridges spanning a 30-degrees-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current-voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges without a BGB did not show the RSJ-like behavior, and their critical current densities were 20 times larger than those of BGB bridges, confirming BGB bridges display a Josephson effect originating from weakly-linked BGB.

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preprint2010arXiv

Transport and magnetic properties of Co-doped BaFe_{2}As_{2} epitaxial thin films

We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.

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preprint2009arXiv

Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and $^{31}$P-NMR Measurements

We have performed magnetization and $^{31}$P-NMR measurements on the itinerant ferromagnet LaCoPO (Curie temperature $T_{\rm Curie}\sim 44$ K) with a layered structure in order to investigate spin dynamics in the paramagnetic state. The linear scaling between the Knight shift $K$ at the P site and the bulk susceptibility $χ$ above $T_{\rm Curie}$ indicates that the P nucleus is suitable for investigating magnetic properties. The temperature and magnetic field dependences of the nuclear spin-lattice relaxation rate divided by the temperature $1/T_1T$ at the P site show characteristic features of itinerant ferromagnets, such as ZrZn$_2$ and Y(Co$_{1-x}$Al$_x$)$_2$. In addition, the relationship between $1/T_1T$ and $χ$ above $T_{\rm Curie}$ suggests that ferromagnetic fluctuations possess a two-dimensional (2D) characteristic. The present data show that LaCoPO is a unique ferromagnet, where the 2D fluctuations anticipated from the crystal structure are predominant down to almost $T_{\rm Curie}$.

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