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Takayoshi Katase

Takayoshi Katase appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mtrl-scicond-mat.str-el

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Published work

20 published item(s)

preprint2021arXiv

Photoinduced Transient States of Antiferromagnetic Orderings in La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ and SrFeO${}_{3}$ Thin Films Observed through Time-resolved Resonant Soft X-ray Scattering

The relationship between the magnetic interaction and photoinduced dynamics in antiferromagnetic perovskites is investigated in this study. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ thin films, commensurate spin ordering is accompanied by charge disproportionation, whereas SrFeO${}_{3}$ thin films show incommensurate helical antiferromagnetic spin ordering due to increased ferromagnetic coupling compared to La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$. To understand the photoinduced spin dynamics in these materials, we investigate the spin ordering through time-resolved resonant soft X-ray scattering. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$, ultrafast quenching of the magnetic ordering within 130 fs through a nonthermal process is observed, triggered by charge transfer between the Fe atoms. We compare this to the photoinduced dynamics of the helical magnetic ordering of SrFeO${}_{3}$. We find that the change in the magnetic coupling through optically induced charge transfer can offer an even more efficient channel for spin-order manipulation.

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preprint2020arXiv

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$

Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflectance and Raman-scattering analysis to evaluate the electron transport governed by optical phonon scattering. A calculated room-temperature mobility on the order of $3.9 \times 10^2$ cm$^2$V$^{-1}$s$^{-1}$ is obtained, identifying cubic SrGeO$_3$ as one of the most promising TCOs. Employing classical phonon theory and a combined experimental-theoretical approach, a comprehensive analysis of the intrinsic electron mobility in the cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$, and SrTiO$_3$ is provided based on the magnitude of polarization and eigenfrequency of optically active phonons.

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preprint2016arXiv

Reversibly switchable electromagnetic device with leakage-free electrolyte

Electrical control of oxygen off-stoichiometry of transition-metal oxides at room temperature is a desired strategy to simultaneously switch the electrical conductance and magnetism of the device. Although the use of the electrochemical redox reaction of transition-metal oxides is the most reasonable way to achieve the aforementioned switch, such a device has not been realized because of the lack of a leakage-free liquid electrolyte. Here, we demonstrate an electromagnetic device that can reversibly switch a transition-metal oxide from an insulator/non-magnet to a metal/magnet (Tc=275 K) using a newly developed 'leakage-free electrolyte', incorporated in an amorphous NaTaO3 nanopillar array film. Reversible switching occurs electrically, obeying Faraday's laws of electrolysis, under a DC voltage of +(-)3 V within 2-3 s at RT. The present electromagnetic device does not have the drawback of liquid leakage, and the leakage-free electrolyte provides a novel design concept for practical electromagnetic devices using transition-metal oxides.

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preprint2015arXiv

Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001) alpha-Al2O3, (11-20) alpha-Al2O3, and (001) TiO2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from ~200 to 23 microV K-1, along with a sharp drop in electrical resistivity (rho), due to the transition from an insulator to a metal. The MI transition temperatures observed both in rho (Trho) and S (TS) for the VO2 films systematically decrease with lattice shrinkage in the pseudo-rutile structure along c-axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset TS, where the insulating phase starts to become metallic, is much lower than onset Trho. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in rho-measurements. Consequently, S-measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in VO2.

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preprint2014arXiv

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm2 irrespective of the laser wavelength.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2

A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 insulating epitaxial film with an atomically flat surface and examined its electrostatic carrier doping using an electric double-layer transistor (EDLT) structure with an ionic liquid gate. The positive gate voltage gave conductance modulation of three orders of magnitude at 25 K, and further induced and manipulated a phase transition; i.e., delocalized carrier generation by electrostatic doping is the origin of the phase transition. This is the first demonstration, to the authors' knowledge, of an EDLT using a Mott insulator iron-selenide channel and opens a way to explore high-Tc superconductivity in iron-based layered materials, where carrier doping by conventional chemical means is difficult.

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preprint2014arXiv

Thermopower analysis of the electronic structure around metal-insulator transition in V1-xWxO2

Electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x = 0-0.06) grown on alfa-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S|-values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in good linear relation with MI transition temperatures. |S| values of V1-xWxO2 films at T > TS were constant at low values of 23 microV K-1 independently of x, which reflects a metallic electronic structure, whereas, those at T < TS almost linearly decreased with logarithmic W-concentrations. The gradient of -213 microV K-1 agrees well with -kB/e*ln10 (-198 microV K-1), suggesting that V1-xWxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.

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preprint2013arXiv

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm2

The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρxy and the longitudinal resistivity ρxx follow power law scaling ρxy = Aρxxβ. In the temperature-sweep with a fixed field (T sweep), all of the β values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the β values in the magnetic-field sweep with a fixed temperature (H sweep) change from 1.8 to 2.0 as the temperature increases from 13 to 16 K even in the T/H region that overlaps with the T sweep measurements. These results indicate that the vortices introduced at low temperatures are trapped by strong pinning centers, but a portion of the vortices introduced at high temperatures are not strongly trapped by the pinning centers. The sign of ρxy is negative, and a sign reversal is not detected. These distinct scaling behaviors, which sharply contrast cuprates and MgB2, are explained by high-density c-axis pinning centers in the Ba(Fe1-xCox)2As2 epitaxial film and are consistent with a wider vortex liquid phase.

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preprint2013arXiv

Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films

The effect of electron doping by trivalent charge state rare-earth ion (RE = La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 was examined using epitaxial films. Each of the RE substitutions suppressed the resistivity anomaly associated with the magnetic/structural phase transitions, leading to the resistivity drops and superconductivity transitions. Bulk superconductivity was observed at the maximum onset critical temperature (Tconset) of 22.4 K for La-doping and 13.4 K for Ce-doping, while only broad resistivity drops were observed at 6.2 K for Pr-doping and 5.8 K for Nd-doping but neither zero resistivity nor distinct Meissner effect were observed at least down to 2 K. The decrease in Tconset with increasing the number of RE 4f electrons cannot be explained in terms of the crystalline qualities or crystallographic structure parameters of the BaFe2As2 films. It was clarified, based on resistivity-temperature analyses, that magnetic scattering became increasingly significant in the above order of the RE dopants. The negative magnetoresistance was enhanced by the Ce- and Pr-doping, implying that the decrease in Tc originates from magnetic pair breaking by interaction of the localized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals.

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preprint2013arXiv

Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition

A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that the difference in the electron doping sites does not influence the superconducting properties of 122-type SrFe2As2.

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preprint2013arXiv

Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films

Applying an external pressure to indirectly electron-doped 122-type (Ba1-xLax)Fe2As2 epitaxial films enhances the superconducting critical temperature (Tc) up to 30.3 K. Different from the other family compounds, the Tc is enhanced not only in the under-doped region but also in the optimally doped and over-doped regions. Narrowing of the superconducting transition width and an increase in the carrier density take place simultaneously in the whole doping region, except at the heavily over-doped limit. This characteristic is unique to and observed only in (Ba1-xLax)Fe2As2, in which the La doping is stabilized via non-equilibrium growth of the vapor phase epitaxy, among the 122-type iron-based superconductors, AFe2As2 (A = Ba, Sr, and Ca).

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preprint2012arXiv

Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films

Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film growth process. The substitution with La was substantiated by a systematic shrinkage of the c-axis lattice parameter due to the smaller ionic radius of La3+ than that of Ba2+. A negative Hall coefficient indicated that the majority carriers were electrons, as is consistent with this aliovalent ion doping. The La substitution suppressed an antiferromagnetic transition and induced bulk superconductivity at a maximum onset critical temperature (Tc) of 22.4 K. The electronic phase diagram for (Ba1-xLax)Fe2As2 was built, which revealed that the indirect electron doping at the Ba site with La [(Ba1-xLax)Fe2As2] exhibits almost the same Tc - doping level relation as that of the direct electron-doping at the Fe site with Co [Ba(Fe1-xCox)2As2]. This finding clarified that Tc in 122-type compounds is not affected by a crystallographic doping site, which is in sharp contrast to the 1111-type compounds, REFeAsO (RE = rare earth). It is tentatively attributed to the differences in their dimensionality of electronic structures and electron pairing symmetries.

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preprint2012arXiv

Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1--xCox)2As2 (AE = alkaline earth)

This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet laser as an excitation source. The most critical parameter to produce the SrFe2As2:Co and BaFe2As2:Co phases is the substrate temperature (Ts). It is difficult to produce highly-pure CaFe2As2:Co phase thin film at any Ts. For BaFe2As2:Co epitaxial films, controlling Ts at 800-850 °C and growth rate to 2.8-3.3 Å/s produced high-quality films with good crystallinity, flat surfaces, and high critical current densities > 1 MA/cm2, which were obtained for film thicknesses from 100 to 500 nm. The doping concentration x was optimized for Ba(Fe1-xCox)2As2 epitaxial films, leading to the highest critical temperature of 25.5 K in the epitaxial films with the nominal x = 0.075.

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preprint2012arXiv

Ultralow-dissipative conductivity by Dirac fermions in BaFe$_2$As$_2$

We report on the anomalous behavior of the complex conductivity of BaFe$_{2}$As$_{2}$, which is related to the Dirac cone, in the terahertz (THz)-frequency region. Above the spin-density-wave (SDW) transition temperature, the conductivity spectra follow the Drude model. In the SDW state, the imaginary part of the complex conductivity, $σ_2$, is suppressed in comparison to that expected according to the Drude model. The real part, $σ_1$, exhibits nearly Drude-like behavior. This behavior (i.e., almost no changes in $σ_1$ and the depression of $σ_2$) can be regarded as the addition of extra conductivity without any dissipations in the Drude-type conductivity. The origin of this ultralow-dissipative conductivity is found to be due to conductivity contribution from quasiparticles within the Dirac cone. In other words, we are able to observe the dynamics of Dirac fermions through the conductivity spectra of BaFe$_2$As$_2$, clearly and directly.

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preprint2011arXiv

Advantageous grain boundaries in iron pnictide superconductors

High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High critical temperature iron pnictide superconductors have advantages over cuprates with respect to these grain boundary issues. The transport properties through well-defined bicrystal grain boundary junctions with various misorientation angles (thetaGB) were systematically investigated for cobalt-doped BaFe2As2 (BaFe2As2:Co) epitaxial films fabricated on bicrystal substrates. The critical current density through bicrystal grain boundary (JcBGB) remained high (> 1 MA/cm2) and nearly constant up to a critical angle thetac of ~9o, which is substantially larger than the thetac of ~5o for YBCO. Even at thetaGB > thetac, the decay of JcBGB was much smaller than that of YBCO.

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preprint2011arXiv

Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates

High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layers (delta fai MgO = 7.3o), and exhibited high self-field Jc up to 3.5 MA/cm2 at 2 K. These values are comparable to that on MgO single crystals and the highest Jc among iron pnictide superconducting tapes and wires ever reported. High in-field Jc suggests the existence of c-axis correlated vortex pinning centers.

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preprint2011arXiv

Thin Film Growth and Device Fabrication of Iron-Based Superconductors

Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, device fabrication, and relevant bulk material properties.

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preprint2010arXiv

DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary.

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preprint2010arXiv

Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La, Sr)(Al, Ta)O3 bicrystal substrates

Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10m-wide microbridges spanning a 30-degrees-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current-voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges without a BGB did not show the RSJ-like behavior, and their critical current densities were 20 times larger than those of BGB bridges, confirming BGB bridges display a Josephson effect originating from weakly-linked BGB.

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preprint2010arXiv

Transport and magnetic properties of Co-doped BaFe_{2}As_{2} epitaxial thin films

We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.

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