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Researcher profile

H. D. Drew

H. D. Drew contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hall

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Published work

4 published item(s)

preprint2010arXiv

Proposal for a Topological Plasmon Spin Rectifier

We propose a device in which the spin-polarized AC plasmon mode in the surface state of a topological insulator nanostructure induces a static spin accumulation in a resonant, normal metal structure coupled to it. Using a finite-difference time-domain model, we simulate this spin-pump mechanism with drift, diffusion, relaxation, and precession in a magnetic field. This optically-driven system can serve as a DC "spin battery" for spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Terahertz Hall Measurements On Optimally Doped Single Crystal Bi-2212

The infrared Hall angle in optimally doped single crystal $\rm Bi_2 Sr_2 Ca Cu_2 O_{8+x}$ was measured from 3.05 to 21.75 meV as a continuous function of temperature from 25 to 300\,K. In the normal state, the temperature dependence of the real part of the cotangent of the infrared Hall angle obeys the same power law as dc measurements. The measured Hall frequency $\rm ω_H$ is significantly larger than the expected value based upon ARPES data analyzed in terms of the relaxation time approximation. This discrepancy as well as the temperature dependence of $\rm Re(\cot{θ_H})$ and $ω_H$ is well described by a Fermi liquid theory in which current vertex corrections produced by electron-magnon scattering are included.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24meV. A single fluid free carrier bulk response can not describe the line-shape. Surface states with a small mass and surprisingly large associated spectral weight quantitatively fit all data. However, carrier concentration inhomogeneity has not been ruled out. A method employing a gate is shown to be promising for separating surface from bulk effects.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Origin of the anomalous Hall Effect in overdoped n-type cuprates: current vertex corrections due to antiferromagnetic fluctuations

The anomalous magneto-transport properties in electron doped (n-type) cuprates were investigated using Hall measurements at THz frequencies. The complex Hall angle was measured in overdoped Pr$_{\rm 2-x}$Ce$_{\rm x}$CuO$_{\rm 4}$ samples (x=0.17 and 0.18) as a continuous function of temperature above $T_c$ at excitation energies 5.24 and 10.5 meV. The results, extrapolated to low temperatures, show that inelastic scattering introduces electron-like contributions to the Hall response. First principle calculations of the Hall angle that include current vertex corrections (CVC) induced by electron interactions mediated by magnetic fluctuations in the Hall conductivity reproduce the temperature, frequency, and doping dependence of the experimental data. These results show that CVC effects are the source of the anomalous Hall transport properties in overdoped n$\text{-}$type cuprates.

0 citations0 reviewsNo code linkedOpen access