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G. S. Jenkins

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Published work

7 published item(s)

preprint2016arXiv

3D Dirac cone carrier dynamics in Na3Bi and Cd3As2

Optical measurements and band structure calculations are reported on 3D Dirac materials. The electronic properties associated with the Dirac cone are identified in the reflectivity spectra of Cd$_3$As$_2$ and Na$_3$Bi single crystals. In Na$_3$Bi, the plasma edge is found to be strongly temperature dependent due to thermally excited free carriers in the Dirac cone. The thermal behavior provides an estimate of the Fermi level $E_F=25$ meV and the z-axis Fermi velocity $v_z = 0.3 \text{ eV} Å$ associated with the heavy bismuth Dirac band. At high energies above the $Γ$-point Lifshitz gap energy, a frequency and temperature independent $ε_2$ indicative of Dirac cone interband transitions translates into an ab-plane Fermi velocity of $3 \text{ eV} Å$. The observed number of IR phonons rules out the $\text{P}6_3\text{/mmc}$ space group symmetry but is consistent with the $\text{P}\bar{3}\text{c}1$ candidate symmetry. A plasmaron excitation is discovered near the plasmon energy that persists over a broad range of temperature. The optical signature of the large joint density of states arising from saddle points at $Γ$ is strongly suppressed in Na$_3$Bi consistent with band structure calculations that show the dipole transition matrix elements to be weak due to the very small s-orbital character of the Dirac bands. In Cd$_3$As$_2$, a distinctive peak in reflectivity due to the logarithmic divergence in $ε_1$ expected at the onset of Dirac cone interband transitions is identified. The center frequency of the peak shifts with temperature quantitatively consistent with a linear dispersion and a carrier density of $n=1.3\times10^{17}\text{ cm}^{-3}$. The peak width gives a measure of the Fermi velocity anisotropy of $10\%$, indicating a nearly spherical Fermi surface. The lineshape gives an upper bound estimate of 7 meV for the potential fluctuation energy scale.

preprint2011arXiv

Dual-gated bilayer graphene hot electron bolometer

Detection of infrared light is central to diverse applications in security, medicine, astronomy, materials science, and biology. Often different materials and detection mechanisms are employed to optimize performance in different spectral ranges. Graphene is a unique material with strong, nearly frequency-independent light-matter interaction from far infrared to ultraviolet, with potential for broadband photonics applications. Moreover, graphene's small electron-phonon coupling suggests that hot-electron effects may be exploited at relatively high temperatures for fast and highly sensitive detectors in which light energy heats only the small-specific-heat electronic system. Here we demonstrate such a hot-electron bolometer using bilayer graphene that is dual-gated to create a tunable bandgap and electron-temperature-dependent conductivity. The measured large electron-phonon heat resistance is in good agreement with theoretical estimates in magnitude and temperature dependence, and enables our graphene bolometer operating at a temperature of 5 K to have a low noise equivalent power (33 fW/Hz1/2). We employ a pump-probe technique to directly measure the intrinsic speed of our device, >1 GHz at 10 K.

preprint2010arXiv

Far infrared cyclotron resonance and Faraday effect in Bi2Se3

The complex Faraday angle and transmission for the topological insulator Bi2Se3 were measured in the far infrared in magnetic fields up to 8 T and analyzed in terms of a simple Drude-Lorentz magneto-plasma dielectric model. Bulk carriers dominate the optical response. The bulk carriers are electrons as we determined from the sign of the Faraday angle. We obtain the bulk band edge cyclotron mass m_cb = 0.16 +- 0.01 m_e and free electron concentration in the 10^17 range. Electron-phonon interaction effects were found to be weak.

preprint2010arXiv

Simultaneous measurement of circular dichroism and Faraday rotation at terahertz frequencies using heterodyne detection

A far-infrared system measures the full complex Faraday angle, rotation as well as ellipticity, with an unprecedented accuracy of 10\,$μ$rad/T. The system operates on several far-infrared laser lines in the spectral range from 0.3 to 6 THz and produces results as a continuous function of temperature from 10 to 310K and applied fields between $\pm$ 8\,T. Materials successfully measured include GaAs 2-DEG heterostructures, various high temperature superconductors including Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$, Pr$_{2 - x}$Ce$_{x}$CuO$_4$, and La$_{2-x}$Sr$_x$CuO$_4$, and single crystals of the topological insulator Bi$_2$Se$_3$.

preprint2010arXiv

Terahertz Hall Measurements On Optimally Doped Single Crystal Bi-2212

The infrared Hall angle in optimally doped single crystal $\rm Bi_2 Sr_2 Ca Cu_2 O_{8+x}$ was measured from 3.05 to 21.75 meV as a continuous function of temperature from 25 to 300\,K. In the normal state, the temperature dependence of the real part of the cotangent of the infrared Hall angle obeys the same power law as dc measurements. The measured Hall frequency $\rm ω_H$ is significantly larger than the expected value based upon ARPES data analyzed in terms of the relaxation time approximation. This discrepancy as well as the temperature dependence of $\rm Re(\cot{θ_H})$ and $ω_H$ is well described by a Fermi liquid theory in which current vertex corrections produced by electron-magnon scattering are included.

preprint2010arXiv

Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24meV. A single fluid free carrier bulk response can not describe the line-shape. Surface states with a small mass and surprisingly large associated spectral weight quantitatively fit all data. However, carrier concentration inhomogeneity has not been ruled out. A method employing a gate is shown to be promising for separating surface from bulk effects.

preprint2009arXiv

Origin of the anomalous Hall Effect in overdoped n-type cuprates: current vertex corrections due to antiferromagnetic fluctuations

The anomalous magneto-transport properties in electron doped (n-type) cuprates were investigated using Hall measurements at THz frequencies. The complex Hall angle was measured in overdoped Pr$_{\rm 2-x}$Ce$_{\rm x}$CuO$_{\rm 4}$ samples (x=0.17 and 0.18) as a continuous function of temperature above $T_c$ at excitation energies 5.24 and 10.5 meV. The results, extrapolated to low temperatures, show that inelastic scattering introduces electron-like contributions to the Hall response. First principle calculations of the Hall angle that include current vertex corrections (CVC) induced by electron interactions mediated by magnetic fluctuations in the Hall conductivity reproduce the temperature, frequency, and doping dependence of the experimental data. These results show that CVC effects are the source of the anomalous Hall transport properties in overdoped n$\text{-}$type cuprates.