BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

M. S. Fuhrer

M. S. Fuhrer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.str-el

Catalog footprint

What is connected

12works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

12 published item(s)

preprint2020arXiv

Importance of interactions for the band structure of the topological Dirac semimetal Na3Bi

We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We find that the velocities for the lowest-lying conduction and valencebands are 1.6x10^6 m/s and 4.2x10^5 m/s respectively, significantly higher than previous theoreticalpredictions. We compare the experimental band dispersions to the theoretical band structures calculated usingan increasing hierarchy of approximations of self-energy corrections due to interactions: generalized gradientapproximation (GGA), meta-GGA, Heyd-Scuseria-Ernzerhof exchange-correlation functional (HSE06), and GW methods. We find that density functional theory methods generally underestimate the electron velocities. However, we find significantly improved agreement with an increasingly sophisticated description of the exchange and interaction potential, culminating in reasonable agreement with experiments obtained by the GW method. The results indicate that exchange-correlation effects are important in determining the electronicstructure of this Na3Bi, and are likely the origin of the high velocity. The electron velocity is consistent withrecent experiments on ultrathin Na3Bi and also may explain the ultrahigh carrier mobility observed in heavilyelectron-doped Na3Bi.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Photo-thermal response in dual-gated bilayer graphene

The photovoltaic and bolometric photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse coincidence technique at 1.5 um was used to measure the response times as a function of temperature. The bolometric and photovoltaic response times were found to be identical implying that the photovoltaic response is also governed by hot electron thermal relaxation. Response times of tau ~ 100 - 20 ps were found for temperatures from 3 - 100 K. Above 10 K, the relaxation time was observed to be tau = 25 +/- 5 ps, independent of temperature within noise.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thin film barristor: a gate tunable vertical graphene-pentacene device

We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO2 (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by the Fermi energy level of graphene, tuned with an external gate voltage. We interpret the device current within the thermionic emission theory, showing a modulation of the energy barrier between graphene and pentacene as large as 300meV.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Universal conductance fluctuations in Dirac materials in the presence of long-range disorder

We study quantum transport in Dirac materials with a single fermionic Dirac cone (strong topological insulators and graphene in the absence of intervalley coupling) in the presence of non-Gaussian long-range disorder. We show, by directly calculating numerically the conductance fluctuations, that in the limit of very large system size and disorder strength, quantum transport becomes universal. However, a systematic deviation away from universality is obtained for realistic system parameters. By comparing our results to existing experimental data on 1/f noise, we suggest that many of the graphene samples studied to date are in a non-universal crossover regime of conductance fluctuations.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Dual-gated bilayer graphene hot electron bolometer

Detection of infrared light is central to diverse applications in security, medicine, astronomy, materials science, and biology. Often different materials and detection mechanisms are employed to optimize performance in different spectral ranges. Graphene is a unique material with strong, nearly frequency-independent light-matter interaction from far infrared to ultraviolet, with potential for broadband photonics applications. Moreover, graphene's small electron-phonon coupling suggests that hot-electron effects may be exploited at relatively high temperatures for fast and highly sensitive detectors in which light energy heats only the small-specific-heat electronic system. Here we demonstrate such a hot-electron bolometer using bilayer graphene that is dual-gated to create a tunable bandgap and electron-temperature-dependent conductivity. The measured large electron-phonon heat resistance is in good agreement with theoretical estimates in magnitude and temperature dependence, and enables our graphene bolometer operating at a temperature of 5 K to have a low noise equivalent power (33 fW/Hz1/2). We employ a pump-probe technique to directly measure the intrinsic speed of our device, >1 GHz at 10 K.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunable Kondo Effect in Graphene with Defects

Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graphene, and, given carbon's lack of d or f electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported7-10, with explanations ranging from lattice defects11 to edge structures12, 13 to negative curvature regions of the graphene sheet14. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG) induced by proton irradiation9 or native to grain boundaries7, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene15 are local moments which interact strongly with the conduction electrons through the Kondo effect6, 16-18 providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature TK is tunable with carrier density from 30-90 K; the high TK is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material18. The results indicate that defect engineering in graphene could be used to generate and control carrier-mediated magnetism, and realize all-carbon spintronic devices. Furthermore, graphene should be an ideal system in which to probe Kondo physics in a widely tunable electron system.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Controlled Growth, Patterning and Placement of Carbon Nanotube Thin Films

Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of growth catalyst in a chemical vapor deposition process. Densities of CNTs ranging from 0.02 CNTs/μm^2 to 1.29 CNTs/μm^2 are obtained. The resulting pristine CNT thin films are then successfully patterned using either pre-growth or post-growth techniques. By developing a layered photoresist process that is compatible with ferric nitrate catalyst, significant improvements over popular pre-growth patterning methods are obtained. Limitations of traditional post-growth patterning methods are circumvented by selective transfer printing of CNTs with either thermoplastic or metallic stamps. Resulting as-grown patterns of CNT thin films have edge roughness (< 1 μm) and resolution (< 5 μm) comparable to standard photolithography. Bottom gate CNT thin film devices are fabricated with field-effect mobilities up to 20 cm^2/Vs and on/off ratios of the order of 10^3. The patterning and transfer printing methods discussed here have a potential to be generalized to include other nanomaterials in new device configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optimizing Transistor Performance of Percolating Carbon Nanotube Networks

In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on devices in a transistor configuration and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length (L) for CNT density p in the range 0.04 - 1.29 CNT/μm^2 in the on- and off-states. Optimized devices with field-effect mobility up to 50 cm^2/Vs at on/off ratio > 10^3 were obtained at W = 50 μm, L > 70 μm for p = 0.54 - 0.81 CNTs/μm^2.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Proposal for a Topological Plasmon Spin Rectifier

We propose a device in which the spin-polarized AC plasmon mode in the surface state of a topological insulator nanostructure induces a static spin accumulation in a resonant, normal metal structure coupled to it. Using a finite-difference time-domain model, we simulate this spin-pump mechanism with drift, diffusion, relaxation, and precession in a magnetic field. This optically-driven system can serve as a DC "spin battery" for spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transfer Printing Approach to All-Carbon Nanoelectronics

Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1kOhmsquare^{-1} at 80% transparency were used as electrodes, and high quality chemical vapor deposition (CVD)-grown CNT networks were used as the semiconductor component. Transfer printing was used to pre-pattern and assemble thin film transistors on polyethylene terephthalate (PET) substrates which incorporated Al_{2}O_{3}/poly-methylmethacrylate (PMMA) dielectric bi-layer. CNT-based ambipolar devices exhibit field-effect mobility in range 1 - 33 cm^{2}/Vs and on/off ratio ~10^{3}, comparable to the control devices fabricated using Au as the electrode material.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Transmission Line Impedance of Carbon Nanotube Thin Films for Chemical Sensing

We measure the resistance and frequency-dependent gate capacitance of carbon nanotube (CNT) thin films in ambient, vacuum, and under low-pressure (10E-6 torr) analyte environments. We model the CNT film as an RC transmission line and show that changes in the measured capacitance as a function of gate bias and analyte pressure are consistent with changes in the transmission line impedance due to changes in the CNT film resistivity alone; the electrostatic gate capacitance of the CNT film does not depend on gate voltage or chemical analyte adsorption. However, the CNT film resistance is enormously sensitive to low pressure analyte exposure.

0 citations0 reviewsNo code linkedOpen access