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Guo-Ping Guo

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Published work

60 published item(s)

preprint2026arXiv

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

preprint2022arXiv

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

preprint2022arXiv

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a double quantum dot in a Germanium (Ge) hut wire (HW), which could help enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli spin blockade regime in the double quantum dot device.By adjusting the interdot tunnel coupling, we obtain an electric field tuned spin-orbit length lso = 2.0 - 48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

preprint2022arXiv

Shortcuts to Quantum Approximate Optimization Algorithm

The Quantum Approximate Optimization Algorithm (QAOA) is a quantum-classical hybrid algorithm intending to find the ground state of a target Hamiltonian. Theoretically, QAOA can obtain the approximate solution if the quantum circuit is deep enough. Actually, the performance of QAOA decreases practically if the quantum circuit is deep since near-term devices are not noise-free and the errors caused by noise accumulate as the quantum circuit increases. In order to reduce the depth of quantum circuits, we propose a new ansatz dubbed as "Shortcuts to QAOA" (S-QAOA), S-QAOA provides shortcuts to the ground state of target Hamiltonian by including more two-body interactions and releasing the parameter freedoms. To be specific, besides the existing ZZ interaction in the QAOA ansatz, other two-body interactions are introduced in the S-QAOA ansatz such that the approximate solutions could be obtained with smaller circuit depth. Considering the MaxCut problem and Sherrington-Kirkpatrick (SK) model, numerically computation shows the YY interaction has the best performance. The reason for this might arise from the counterdiabatic effect generated by YY interaction. On top of this, we release the freedom of parameters of two-body interactions, which a priori do not necessarily have to be fully identical, and numerical results show that it is worth paying the extra cost of having more parameter freedom since one has a greater improvement on success rate.

preprint2022arXiv

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.

preprint2021arXiv

Quantum error correction with the color-Gottesman-Kitaev-Preskill code

The Gottesman-Kitaev-Preskill (GKP) code is an important type of bosonic quantum error-correcting code. Since the GKP code only protects against small shift errors in $\hat{p}$ and $\hat{q}$ quadratures, it is necessary to concatenate the GKP code with a stabilizer code for the larger error correction. In this paper, we consider the concatenation of the single-mode GKP code with the two-dimension (2D) color code (color-GKP code) on the square-octagon lattice. We use the Steane type scheme with a maximum-likelihood estimation (ME-Steane scheme) for GKP error correction and show its advantage for the concatenation. In our main work, the minimum-weight perfect matching (MWPM) algorithm is applied to decode the color-GKP code. Complemented with the continuous-variable information from the GKP code, the threshold of 2D color code is improved. If only data GKP qubits are noisy, the threshold reaches $σ\approx 0.59$ $(\bar{p}\approx13.3\%)$ compared with $\bar{p}=10.2\%$ of the normal 2D color code. If measurements are also noisy, we introduce the generalized Restriction Decoder on the three-dimension space-time graph for decoding. The threshold reaches $σ\approx 0.46$ when measurements in the GKP error correction are noiseless, and $σ\approx 0.24$ when all measurements are noisy. Lastly, the good performance of the generalized Restriction Decoder is also shown on the normal 2D color code giving the threshold at $3.1\%$ under the phenomenological error model.

preprint2021arXiv

Quantum Finite Volume Method for Computational Fluid Dynamics with Classical Input and Output

Computational fluid dynamics (CFD) is a branch of fluid mechanics that uses numerical methods to solve fluid flows. The finite volume method (FVM) is an important one. In FVM, space is discretized to many grid cells. When the number of grid cells grows, massive computing resources are needed correspondingly. Recently, quantum computing has been proven to outperform a classical computer on specific computational tasks. However, the quantum CFD (QCFD) solver remains a challenge because the conversion between the classical and quantum data would become the bottleneck for the time complexity. Here we propose a QCFD solver with exponential speedup over classical counterparts and focus on how a quantum computer handles classical input and output. By utilizing quantum random access memory, the algorithm realizes sublinear time at every iteration step. The QCFD solver could allow new frontiers in the CFD area by allowing a finer mesh and faster calculation.

preprint2021arXiv

Quantum Quantitative Trading: High-Frequency Statistical Arbitrage Algorithm

Quantitative trading is an integral part of financial markets with high calculation speed requirements, while no quantum algorithms have been introduced into this field yet. We propose quantum algorithms for high-frequency statistical arbitrage trading in this work by utilizing variable time condition number estimation and quantum linear regression.The algorithm complexity has been reduced from the classical benchmark O(N^2d) to O(sqrt(d)(kappa)^2(log(1/epsilon))^2 )). It shows quantum advantage, where N is the length of trading data, and d is the number of stocks, kappa is the condition number and epsilon is the desired precision. Moreover, two tool algorithms for condition number estimation and cointegration test are developed.

preprint2021arXiv

Special-Purpose Quantum Processor Design

Full connectivity of qubits is necessary for most quantum algorithms, which is difficult to directly implement on Noisy Intermediate-Scale Quantum processors. However, inserting swap gate to enable the two-qubit gates between uncoupled qubits significantly decreases the computation result fidelity. To this end, we propose a Special-Purpose Quantum Processor Design method that can design suitable structures for different quantum algorithms. Our method extends the processor structure from two-dimensional lattice graph to general planar graph and arranges the physical couplers according to the two-qubit gate distribution between the logical qubits of the quantum algorithm and the physical constraints. Experimental results show that our design methodology, compared with other methods, could reduce the number of extra swap gates per two-qubit gate by at least 104.2% on average. Also, our method's advantage over other methods becomes more obvious as the depth and qubit number increase. The result reveals that our method is competitive in improving computation result fidelity and it has the potential to demonstrate quantum advantage under the technical conditions.

preprint2021arXiv

Transverse mode-encoded quantum gate on a silicon photonic chip

As an important degree of freedom (DoF) in integrated photonic circuits, the orthogonal transverse mode provides a promising and flexible way to increasing communication capability, for both classical and quantum information processing. To construct large-scale on-chip multimode multi-DoF quantum systems, a transverse mode-encoded controlled-NOT (CNOT) gate is necessary. Here, through design and integrate transverse mode-dependent directional coupler and attenuators on a silicon photonic chip, we demonstrate the first multimode implementation of a two-qubit quantum gate. With the aid of state preparation and analysis parts, we show the ability of the gate to entangle two separated transverse mode qubits with an average fidelity of $0.89\pm0.02$ and the achievement of 10 standard deviations of violations in the quantum nonlocality verification. In addition, a fidelity of $0.82\pm0.01$ was obtained from quantum process tomography used to completely characterize the CNOT gate. Our work paves the way for universal transverse mode-encoded quantum operations and large-scale multimode multi-DoF quantum systems.

preprint2020arXiv

Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature

Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration six-fold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature and the coherence time T2 can be reached to around 17.1 μs. Furthermore, investigation of fluorescence properties of single NV centers shows that they are room temperature photostable single photon sources at telecom range. Taking advantages of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.

preprint2020arXiv

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

preprint2020arXiv

Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator

The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-scale hut wire positioning. These properties make the Ge hut wire a promising candidate for the realization of strong coupling of spin to superconducting resonators and scalability for multiple qubit coupling. We have coupled a reflection line resonator to a hole double quantum dot (DQD) formed in Ge hut wire. The amplitude and phase responses of the microwave resonator revealed that the charge stability diagrams of the DQD are in good agreement with those obtained from transport measurements. The DQD interdot tunneling rate is shown to be tunable from 6.2 GHz to 8.5 GHz, which demonstrates the ability to adjust the frequency detuning between the qubit and the resonator. Furthermore, we achieved a hole-resonator coupling strength of up to 15 MHz, with a charge qubit decoherence rate of 0.28 GHz. Meanwhile the hole spin-resonator coupling rate was estimated to be 3 MHz. These results suggest that holes of a DQD in a Ge hut wire are dipole coupled to microwave photons, potentially enabling tunable hole spin-photon interactions in Ge with an inherent spin-orbit coupling.

preprint2020arXiv

Entanglement Area Law for Shallow and Deep Quantum Neural Network States

A study of the artificial neural network representation of quantum many-body states is presented. The locality and entanglement properties of states for shallow and deep quantum neural networks are investigated in detail. By introducing the notion of local quasi-product states, for which the locally connected shallow feed-forward neural network states and restricted Boltzmann machine states are special cases, we show that Rényi entanglement entropies of all these states obey the entanglement area law. Besides, we also investigate the entanglement features of deep Boltzmann machine states and show that locality constraints imposed on the neural networks make the states obey the entanglement area law. Finally, as an application, we apply the notion of Rényi entanglement entropy to understanding the power of neural networks and show that image classification problems which can be efficiently solved must obey the area law.

preprint2020arXiv

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV.

preprint2020arXiv

Hole spin in tunable Ge hut wire double quantum dot

Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We observe the signatures of Pauli spin blockade (PSB) with a large singlet-triplet energy splitting of ~1.1 meV and extract the g factor. By analyzing the the PSB leakage current, we obtain a spin-orbit length l_so of ~ 40-100 nm. Furthermore, we demonstrate the electric dipole spin resonance. These results lay a solid foundation for implementing high quality tunable hole spin-orbit qubits.

preprint2020arXiv

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.

preprint2020arXiv

Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime

Parametric amplification is widely used in nanoelectro-mechanical systems to enhance the transduced mechanical signals. Although parametric amplification has been studied in different mechanical resonator systems, the nonlinear dynamics involved receives less attention. Taking advantage of the excellent electrical and mechanical properties of graphene, we demonstrate electrical tunable parametric amplification using a doubly clamped graphene nanomechanical resonator. By applying external microwave pumping with twice the resonant frequency, we investigate parametric amplification in the nonlinear regime. We experimentally show that the extracted coefficient of the nonlinear Duffing force α and the nonlinear damping coefficient η vary as a function of external pumping power, indicating the influence of higher-order nonlinearity beyond the Duffing (~x^3) and van der Pol (~x^2 dx/dt) types in our device. Even when the higher-order nonlinearity is involved, parametric amplification still can be achieved in the nonlinear regime. The parametric gain increases and shows a tendency of saturation with increasing external pumping power. Further, the parametric gain can be electrically tuned by the gate voltage with a maximum gain of 10.2 dB achieved at the gate voltage of 19 V. Our results will benefit studies on nonlinear dynamics, especially nonlinear damping in graphene nanomechanical resonators that has been debated in the community over past decade.

preprint2019arXiv

Semiconductor Quantum Computation

Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The researches vary from initialization, control and readout of qubits, to the architecture of fault tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single- and two- qubit gate control in semiconductor. Till now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor was even demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.

preprint2018arXiv

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments.

preprint2017arXiv

A tunable hybrid qubit in a triple quantum dot

We experimentally demonstrate quantum coherent dynamics of a triple-dot-based multi-electron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, and measured electrically, and has good coherence time as compared to gate time. Furthermore, the current multi-electron hybrid qubit has an operation frequency that is tunable in a wide range, from 2 to about 15 GHz. We provide qualitative understandings of the experimental observations by mapping it onto a three-electron system, and compare it with the double dot hybrid qubit and the all-exchange triple-dot qubit.

preprint2017arXiv

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

preprint2017arXiv

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

preprint2016arXiv

Charge Number Dependence of the Dephasing Rates of a Graphene Double Quantum Dot in a Circuit QED Architecture

We use an on-chip superconducting resonator as a sensitive meter to probe the properties of graphene double quantum dots at microwave frequencies. Specifically, we investigate the charge dephasing rates in a circuit quantum electrodynamics architecture. The dephasing rates strongly depend on the number of charges in the dots, and the variation has a period of four charges, over an extended range of charge numbers. Although the exact mechanism of this fourfold periodicity in dephasing rates is an open problem, our observations hint at the fourfold degeneracy expected in graphene from its spin and valley degrees of freedom.

preprint2016arXiv

On-chip coherent conversion of photonic quantum signals between different degrees of freedom

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process.

preprint2016arXiv

Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot

Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1) charge transition using a pulsed-gate technique and a charge sensor. We then use this spin blockade to detect Landau-Zener-Stückelberg (LZS) interference and coherent oscillations between the spin quadruplet and doublet states. Such studies add to our understandings of coherence and control properties of three-spin states in a double dot, which in turn would benefit the explorations into various qubit encoding schemes in semiconductor nanostructures.

preprint2016arXiv

Strongly-coupled nanotube electromechanical resonators

Coupling an electromechanical resonator with carbon-nanotube quantum dots is a significant method to control both the electronic charge and the spin quantum states. By exploiting a novel micro-transfer technique, we fabricate two strongly-coupled and electrically-tunable mechanical resonators on a single carbon nanotube for the first time. The frequency of the two resonators can be individually tuned by the bottom gates, and strong coupling is observed between the electron charge and phonon modes of each resonator. Furthermore, the conductance of either resonator can be nonlocally modulated by the phonon modes in the other resonator. Strong coupling is observed between the phonon modes of the two resonators, which provides an effective long distance electron-electron interaction. The generation of phonon-mediated-spin entanglement is also theoretically analyzed for the two resonators. This strongly-coupled nanotube electromechanical resonator array provides an experimental platform for future studies of the coherent electron-phonon interaction, the phonon mediated long-distance electron interaction, and entanglement state generation.

preprint2016arXiv

Tunable Hybrid Qubit in a GaAs Double Quantum Dot

We experimentally demonstrate a tunable hybrid qubit in a five-electron GaAs double quantum dot. The qubit is encoded in the (1,4) charge regime of the double dot and can be manipulated completely electrically. More importantly, dot anharmonicity leads to quasiparallel energy levels and a new anticrossing, which help preserve quantum coherence of the qubit and yield a useful working point. We have performed Larmor precession and Ramsey fringe experiments near the new working point and find that the qubit decoherence time is significantly improved over a charge qubit. This work shows a new way to encode a semiconductor qubit that is controllable and coherent.

preprint2015arXiv

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, thereby eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on quantum nano-devices on TMDCs for further researches.

preprint2015arXiv

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with temperature. To understand its origin, we suspended the graphene QD above the substrate. In contrast to large area graphene FETs, we find that a suspended graphene QD has an almost-identical noise level as an unsuspended one. Tracking noise levels around the Coulomb blockade peak as a function of gate voltage yields potential fluctuations of order 1 "μeV", almost one order larger than in GaAs/GaAlAs QDs. Edge states rather than substrate-induced disorders, appear to dominate the 1/f noise, thus affecting the coherency of graphene nano-devices.

preprint2015arXiv

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.

preprint2015arXiv

Transmission of Photonic Quantum Polarization Entanglement in a Nanoscale Hybrid Plasmonic Waveguide

Photonic quantum technologies have been extensively studied in quantum information science, owing to the high-speed transmission and outstanding low-noise properties of photons. However, applications based on photonic entanglement are restricted due to the diffraction limit. In this work, we demonstrate for the first time the maintaining of quantum polarization entanglement in a nanoscale hybrid plasmonic waveguide composed of a fiber taper and a silver nanowire. The transmitted state throughout the waveguide has a fidelity of 0.932 with the maximally polarization entangled state Φ+. Furthermore, the Clauser, Horne, Shimony, and Holt (CHSH) inequality test performed, resulting in value of 2.495+/-0.147 > 2, demonstrates the violation of the hidden variable model. Because the plasmonic waveguide confines the effective mode area to subwavelength scale, it can bridge nanophotonics and quantum optics and may be used as near-field quantum probe in a quantum near-field micro/nanoscope, which can realize high spatial resolution, ultrasensitive, fiber-integrated, and plasmon-enhanced detection.

preprint2014arXiv

Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits

A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit gate, such as a controlled-NOT (CNOT) gate. Semiconductor quantum dot qubits are a leading approach for the physical implementation of quantum computation, due to their potential for large-scale integration. Two-qubit gate operations have been so far only demonstrated in individual electron spin-based quantum dot systems. Due to the relatively short de-coherence time, charge qubits in quantum dots are generally considered to be inferior for going beyond single qubit level. Here, we demonstrate the benchmarking CNOT gate in two capacitively coupled charge qubits, each consisting of an electron confined in a GaAs/AlGaAs double quantum dot. Owing to the strong inter-qubit coupling strength, gate operations with a clock speed up to 5GHz has been realized. A processing tomography shows encouragingly that the universal two-qubit gate operations have comparable fidelities to that of spin-based two-qubit gates. Our results suggest that semiconductor charge qubits have a considerable potential for scalable quantum computing and may stimulate the use of long-range Coulomb interaction for coherent quantum control in other devices.

preprint2014arXiv

Coupling two distant double quantum dots to a microwave resonator

With recent advances in the circuit quantum electrodynamics (cQED) architecture, hybrid systems that couple nano-devices to microwave resonators have been developing rapidly. Here we report an experimental demonstration of two graphene double quantum dots (DQDs) coupled over a distance of up to 60 μm, through a microwave resonator. We jointly measure the two DQDs' coupling to the resonator, which causes a nonlinear response in the resonator reflection amplitude in the vicinity of the degeneracy points of the two DQDs. This phenomenon is explained by the Tavis-Cummings (T-C) mode. We further characterize this nonlocal coupling by measuring the correlation between the DC currents in the two DQDs. This correlation is observed to be strongly dependent on the average photon number in the resonator. Our results explore T-C physics in electronic transport, and also contribute to the study of nonlocal transport and future implementations of remote electronic entanglement.

preprint2014arXiv

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

preprint2014arXiv

High visibility on-chip quantum interference of single surface plasmons

Quantum photonic integrated circuits (QPICs) based on dielectric waveguides have been widely used in linear optical quantum computation. Recently, surface plasmons have been introduced to this application because they can confine and manipulate light beyond the diffraction limit. In this study, the on-chip quantum interference of two single surface plasmons was achieved using dielectric-loaded surface-plasmon-polariton waveguides. The high visibility (greater than 90%) proves the bosonic nature of single plasmons and emphasizes the feasibility of achieving basic quantum logic gates for linear optical quantum computation. The effect of intrinsic losses in plasmonic waveguides with regard to quantum information processing is also discussed. Although the influence of this effect was negligible in the current experiment, our studies reveal that such losses can dramatically reduce quantum interference visibility in certain cases; thus, quantum coherence must be carefully considered when designing QPIC devices.

preprint2014arXiv

Introduction of DC line structures into a superconducting microwave 3D cavity

We report a technique that can noninvasively add multiple DC wires into a 3D superconducting microwave cavity for electronic devices that require DC electrical terminals. We studied the influence of our DC lines on the cavity performance systematically. We found that the quality factor of the cavity is reduced if any of the components of the electrical wires cross the cavity equipotential planes. Using this technique, we were able to incorporate a quantum dot (QD) device into a 3D cavity. We then controlled and measured the QD transport signal using the DC lines. We have also studied the heating effects of the QD by the microwave photons in the cavity.

preprint2014arXiv

Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces

Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838 (2013)]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperature of 184 mK is demonstrated based on systematical transport measurements. The two dimensional characteristic of the superconductivity is confirmed by analyzing the Berezinskii-Kosterlitz-Thouless transition. The estimated superconductive thickness is about 18 nm. These features of superconductivity of (110) LAO/STO interfaces are comparable to those of (001) LAO/STO interfaces. This discovery may inspire a new round of upsurge on study of LAO/STO interfaces.

preprint2014arXiv

Ultrafast Manipulation of a Double Quantum Dot via Lyapunov Control Method

For a double quantum dot (DQD) system, here we propose alternative ultrafast manipulate approach: Lyapunov control method, to transfer the state from R to L on the picosecond scale, orders of magnitude faster and transfer probability higher than the previously measured electrically controlled charge- or spin-based quits. The control laws are composed of two-direction components, one is used to eliminate the dissipation in the system, another is used to transfer the state. The control theory's stability ensures the system can be transferred to the target state in high probability, and the coefficients in control laws leads very fast convergence. The role of eliminating the dissipation plays the suppression of decoherence effect. Numerical simulation results show that under the realistic implementation conditions, the transfer probability and fidelity can be increased up to 98.79% and 98.97%, respectively. This is the first result directly applicable to a DQD system's state transferring using the Lyapunov control method. We also give specific experimental realization scheme.

preprint2013arXiv

Detecting orbital angular momentum through division-of-amplitude interference with a circular plasmonic lens

We demonstrate a novel detection scheme for the orbital angular momentum (OAM) of light using circular plasmonic lens. Owing to a division-of-amplitude interference phenomenon between the surface plasmon waves and directly transmitted light, specific intensity distributions are formed near the plasmonic lens surface under different OAM excitations. Due to different phase behaviors of the evanescent surface plasmon wave and the direct transmission, interference patterns rotate as the observation plane moves away from the lens surface. The rotation direction is a direct measure of the sign of OAM, while the amount of rotation is linked to the absolute value of the OAM. This OAM detection scheme is validated experimentally and numerically. Analytical expressions are derived to provide insights and explanations of this detection scheme. This work forms the basis for the realization of a compact and integrated OAM detection architect that may significantly benefit optical information processing with OAM states.

preprint2013arXiv

Observation of Kondo Effect in a Quadruple Quantum Dots

We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential conductance dI/dV is measured in the upper DQDs as a function of source drain bias. It is found to exhibit multiple peaks, including a zero-bias peak, where the number of peaks exceeds five. Alternatively, tuning the lower DQDs yielded regions of four peaks. In addition, a Kondo-effect switcher is demonstrated, using the lower DQDs as the controller.

preprint2013arXiv

Photon-assisted-tunneling in a coupled double quantum dot out of thermal equilibrium

We perform photon-assisted-tunneling (PAT) experiments on a GaAs double quantum dot device under high microwave excitation power. Photon-assisted absorption of up to 14 photons is observed, when electron temperature (>1K) are far above the lattice temperature. Signatures of Landau-Zener-Stückelberg (LZS) interference are found even in this non-equilibrium PAT spectrum. In addition, the charge state relaxation time T_1~8ns measured in this out of thermal equilibrium double quantum dot is in agreement with other previous reports.

preprint2013arXiv

Quantum simulation of Kibble-Zurek mechanism with a semiconductor electron charge qubit

The Kibble-Zurek mechanism provides a description of the topological structure occurring in the symmetry breaking phase transitions, which may manifest as the cosmological strings in the early universe or vortex lines in the superfulid. A particularly intriguing analogy between Kibble-Zurek mechanism and a text book quantum phenomenon, Landau-Zener transition has been discovered, but is difficult to observe up to now. In recent years, there has been broad interest in quantum simulations using different well-controlled physical setups, in which full tunability allows access to unexplored parameter regimes. Here we demonstrate a proof-of-principle quantum simulation of Kibble-Zurek mechanism using a single electron charge qubit in double quantum dot, set to behave as Landau-Zener dynamics. We measure the qubit states as a function of driven pulse velocity and successfully reproduce Kibble-Zurek like dependence of topological defect density on the quench rate. The high-level controllability of semiconductor two-level system make it a platform to test the key elements of topological defect formation process and shed a new insight on the aspect of non-equilibrium phase transitions.

preprint2013arXiv

Symmetric reflection line resonator for semiconductor circuit quantum electrodynamics

We have designed and fabricated a half-wavelength reflection line resonator (RLR) that consists of a pair of two coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a square of two dimensional electron gas under the resonator, a large range of the quality factors can be obtained. Energy loss in the two-dimensional electron gas can be minimized, thus realizing a versatile resonator suitable for integration with semiconductor quantum circuits.

preprint2013arXiv

Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates

Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene nano-structures hinder the ability to control the inter-dot tunnel coupling, tc,the most important property of the artificial molecule. Here we report measurements of tc in an all-metal-gates-tuned graphene DQD. We find that tc can be controlled continuously about a factor of four by employing a single gate. Furthermore, tc, can be changed monotonically about another factor of four as electrons are gate-pumped into the dot one by one. The results suggest that the strength of tunnel coupling in etched DQDs can be varied in a rather broad range and in a controllable manner, which improves the outlook to use graphene as a base material for qubit applications.

preprint2011arXiv

Exciton-Plasmon-Photon Conversion in silver nanowire: polarization dependence

Polarization dependence of the exciton-plasmon-photon conversion in silver nanowire-quantum dots structure was investigated using a scanning confocal microscope system. We found that the fluorescence enhancement of the CdSe nanocrystals was correlated with the angle between the excitation light polarization and the silver nanowire direction. The polarization of the emission was also related with the nanowire direction. It was in majority in the direction parallel with nanowire.

preprint2011arXiv

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

preprint2010arXiv

A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor

We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well as excited spectrum in the dot, even in the regime where the current through the quantum dot is too small to be measured by conventional transport means. The graphene based quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit in a nuclear-spin-free quantum world.

preprint2010arXiv

Andreev reflection enhanced single hole tunneling in Ge/Si core/shell nanowire quantum dot

We experimentally study the electrical transport properties of Ge/Si core/shell nanowire device with two superconducting leads in the Coulomb blockade regime. Anomalous zero field magnetoconductance peaks are observed for the first time at the gate voltages where Coulomb blockade oscillation peaks present. Many evidences indicate this feature is due to Andreev reflection enhanced phase coherent single hole tunneling through the quantum dot, which can be suppressed by an external magnetic field without destroying the superconducting states in the electrodes.

preprint2010arXiv

Quantum Bus of Metal Nanowire with Surface Plasmon Polaritons

We develop an architecture for distributed quantum computation using quantum bus of plasmonic circuits and spin qubits in self-assembled quantum dots. Deterministic quantum gates between two distant spin qubits can be reached by using an adiabatic approach in which quantum dots couple with highly detuned plasmon modes in a metallic nanowire. Plasmonic quantum bus offers a robust and scalable platform for quantum optics experiments and the development of on-chip quantum networks composed of various quantum nodes, such as quantum dots, molecules and nanoparticles.

preprint2010arXiv

Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of strong spin-orbit coupling. The temperature and back gate dependences of phase coherence length, spin-orbit relaxation time, and background conductance were studied. Specifically, we show the spin-orbit coupling strength can be modulated by more than five folds with an external electric field. These results suggest the Ge/Si nanowire system possesses strong and tunable spin-orbit interactions and may serve as a candidate for spintronics applications.

preprint2010arXiv

Tomography of the two-electron spin qubits in semiconductors

We propose an approach to reconstruct two-electron spin qubit states in semiconductor quantum dots by employing tomographic techniques. This procedure exploits the combination of fast gate operations on electron spins trapped in dots and dynamical nuclear polarization of the underlying Ga and As nuclei. The presented method can be an important tool in solid state quantum computation for complete characterization of qubit states and theirs correlations.

preprint2009arXiv

Coupling of light from an optical fiber taper into silver nanowires

We report the coupling of photons from an optical fiber taper to surface plasmon modes of silver nanowires. The launch of propagating plasmons can be realized not only at ends of the nanowires, but also at the midsection. The degree of the coupling can be controlled by adjusting the light polarization. In addition, we present the coupling of light into multiple nanowires from a single optical fiber taper simultaneously. Our demonstration offers a novel method for optimizing plasmon coupling into nanoscale metallic waveguides and promotes the realization of highly integrated plasmonic devices.

preprint2009arXiv

Effect of Quantum Point Contact Measurement on Electron Spin State in Quantum Dot

We study the time evolution of two electron spin states in a double quantum-dot system, which includes a nearby quantum point contact (QPC) as a measurement device. We obtain that the QPC measurement induced decoherence is in time scales of microsecond. We also find that the enhanced QPC measurement will trap the system in its initial spin states, which is consistent with quantum Zeno effect.

preprint2009arXiv

Transmission of doughnut light through a bull's eye structure

We experimentally investigate the extraordinary optical transmission of doughnut light through a bull's eye structure. Since the intensity is vanished in the center of the beam, almost all the energy reaches the circular corrugations (not on the hole), excite surface plasmons which propagate through the hole and reradiate photons. The transmitted energy is about 57 times of the input energy on the hole area. It is also interesting that the transmitted light has a similar spatial shape with the input light although the diameter of the hole is much smaller than the wavelength of light.

preprint2008arXiv

Numerical Studies of Quantum Hall Ferromagnetism in Two-Subband Systems

We carry out a numerical study of the quantum Hall ferromagnetism in a two-subband system using a set of experimental parameters in a recently experiment [X. C. Zhang, I. Martin, and H. W. Jiang, Phys. Rev. B \textbf{74}, 073301 (2006)]. Employing the self-consistence local density approximation for growth direction wave function and the Hartree-Fock theory for the pseudospin anisotropy energy, we are able to account for the easy-axis and easy-plane quantum Hall ferromagnetism observed at total filling factor $ν= 3$ and $ν= 4$, respectively. Our study provides some insight of how the anisotropy energy, which highly depends upon the distribution of growth direction wave functions, determines the symmetry of the quantum Hall ferromagnets.

preprint2008arXiv

Quantum computation with graphene nanoribbon

We propose a scalable scheme to implement quantum computation in graphene nanoribbon. It is shown that electron or hole can be naturally localized in each zigzag region for a graphene nanoribbon with a sequence of Z-shaped structure without exploiting any confined gate. An one-dimensional graphene quantum dots chain is formed in such graphene nanoribbon, where electron or hole spin can be encoded as qubits. The coupling interaction between neighboring graphene quantum dots is found to be always-on Heisenberg type. Applying the bang-bang control strategy and decoherence free subspaces encoding method, universal quantum computation is argued to be realizable with the present techniques.

preprint2007arXiv

Influence of unsymmetrical periodicity on extraordinary transmission through periodic arrays of subwavelength holes

Quadrate hole array is explored to study the influence of unsymmetrical periodicity on extraordinary optical transmission through periodic arrays of subwavelength holes. It is found that the transmission efficiency of light and the ratio between transmission efficiencies of horizontal and vertical polarized light can be continuously tuned by rotating the quadrate hole array. We can calculate out the transmission spectra (including the heights and locations of peaks) for any rotation angle $θ$ with a simple theoretical model.

preprint2005arXiv

Engineering of multi-dimensional entangled states of photon pairs using hyper-entanglement

Multi-dimensional entangled states have been proven to be more powerful in some quantum information process. In this paper, down-converted photons from spontaneous parametric down conversion(SPDC) are used to engineer multi-dimensional entangled states. A kind of multi-degree multi-dimensional Greenberger-Horne-Zeilinger(GHZ) state can also be generated. The hyper-entangled photons, which are entangled in energy-time, polarization and orbital angular momentum (OAM), is proved to be useful to increase the dimension of systems and investigate higher-dimensional entangled states.

preprint2003arXiv

Preparation of multi-party entanglement of individual photons and atomic ensembles

An experimental feasible scheme is proposed to generate Greenberger-Horne-Zeilinger (GHZ) type of maximal entanglement. Distinguishing from the previous schemes, this entanglement can be chosen between either atomic ensembles (stationary qubit) or individual photons (flying qubit), according to the difference applications we desire for it. The physical requirements of the scheme are moderate and well fit the present experimental techinque.