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Researcher profile

Guo-Ping Guo

Guo-Ping Guo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.comp-phComputational Engineering, Finance, and Sciencecond-mat.str-elphysics.app-phphysics.opticsq-fin.CPq-fin.TR

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Published work

24 published item(s)

preprint2026arXiv

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a double quantum dot in a Germanium (Ge) hut wire (HW), which could help enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli spin blockade regime in the double quantum dot device.By adjusting the interdot tunnel coupling, we obtain an electric field tuned spin-orbit length lso = 2.0 - 48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Shortcuts to Quantum Approximate Optimization Algorithm

The Quantum Approximate Optimization Algorithm (QAOA) is a quantum-classical hybrid algorithm intending to find the ground state of a target Hamiltonian. Theoretically, QAOA can obtain the approximate solution if the quantum circuit is deep enough. Actually, the performance of QAOA decreases practically if the quantum circuit is deep since near-term devices are not noise-free and the errors caused by noise accumulate as the quantum circuit increases. In order to reduce the depth of quantum circuits, we propose a new ansatz dubbed as "Shortcuts to QAOA" (S-QAOA), S-QAOA provides shortcuts to the ground state of target Hamiltonian by including more two-body interactions and releasing the parameter freedoms. To be specific, besides the existing ZZ interaction in the QAOA ansatz, other two-body interactions are introduced in the S-QAOA ansatz such that the approximate solutions could be obtained with smaller circuit depth. Considering the MaxCut problem and Sherrington-Kirkpatrick (SK) model, numerically computation shows the YY interaction has the best performance. The reason for this might arise from the counterdiabatic effect generated by YY interaction. On top of this, we release the freedom of parameters of two-body interactions, which a priori do not necessarily have to be fully identical, and numerical results show that it is worth paying the extra cost of having more parameter freedom since one has a greater improvement on success rate.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum error correction with the color-Gottesman-Kitaev-Preskill code

The Gottesman-Kitaev-Preskill (GKP) code is an important type of bosonic quantum error-correcting code. Since the GKP code only protects against small shift errors in $\hat{p}$ and $\hat{q}$ quadratures, it is necessary to concatenate the GKP code with a stabilizer code for the larger error correction. In this paper, we consider the concatenation of the single-mode GKP code with the two-dimension (2D) color code (color-GKP code) on the square-octagon lattice. We use the Steane type scheme with a maximum-likelihood estimation (ME-Steane scheme) for GKP error correction and show its advantage for the concatenation. In our main work, the minimum-weight perfect matching (MWPM) algorithm is applied to decode the color-GKP code. Complemented with the continuous-variable information from the GKP code, the threshold of 2D color code is improved. If only data GKP qubits are noisy, the threshold reaches $σ\approx 0.59$ $(\bar{p}\approx13.3\%)$ compared with $\bar{p}=10.2\%$ of the normal 2D color code. If measurements are also noisy, we introduce the generalized Restriction Decoder on the three-dimension space-time graph for decoding. The threshold reaches $σ\approx 0.46$ when measurements in the GKP error correction are noiseless, and $σ\approx 0.24$ when all measurements are noisy. Lastly, the good performance of the generalized Restriction Decoder is also shown on the normal 2D color code giving the threshold at $3.1\%$ under the phenomenological error model.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Finite Volume Method for Computational Fluid Dynamics with Classical Input and Output

Computational fluid dynamics (CFD) is a branch of fluid mechanics that uses numerical methods to solve fluid flows. The finite volume method (FVM) is an important one. In FVM, space is discretized to many grid cells. When the number of grid cells grows, massive computing resources are needed correspondingly. Recently, quantum computing has been proven to outperform a classical computer on specific computational tasks. However, the quantum CFD (QCFD) solver remains a challenge because the conversion between the classical and quantum data would become the bottleneck for the time complexity. Here we propose a QCFD solver with exponential speedup over classical counterparts and focus on how a quantum computer handles classical input and output. By utilizing quantum random access memory, the algorithm realizes sublinear time at every iteration step. The QCFD solver could allow new frontiers in the CFD area by allowing a finer mesh and faster calculation.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Quantitative Trading: High-Frequency Statistical Arbitrage Algorithm

Quantitative trading is an integral part of financial markets with high calculation speed requirements, while no quantum algorithms have been introduced into this field yet. We propose quantum algorithms for high-frequency statistical arbitrage trading in this work by utilizing variable time condition number estimation and quantum linear regression.The algorithm complexity has been reduced from the classical benchmark O(N^2d) to O(sqrt(d)(kappa)^2(log(1/epsilon))^2 )). It shows quantum advantage, where N is the length of trading data, and d is the number of stocks, kappa is the condition number and epsilon is the desired precision. Moreover, two tool algorithms for condition number estimation and cointegration test are developed.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Special-Purpose Quantum Processor Design

Full connectivity of qubits is necessary for most quantum algorithms, which is difficult to directly implement on Noisy Intermediate-Scale Quantum processors. However, inserting swap gate to enable the two-qubit gates between uncoupled qubits significantly decreases the computation result fidelity. To this end, we propose a Special-Purpose Quantum Processor Design method that can design suitable structures for different quantum algorithms. Our method extends the processor structure from two-dimensional lattice graph to general planar graph and arranges the physical couplers according to the two-qubit gate distribution between the logical qubits of the quantum algorithm and the physical constraints. Experimental results show that our design methodology, compared with other methods, could reduce the number of extra swap gates per two-qubit gate by at least 104.2% on average. Also, our method's advantage over other methods becomes more obvious as the depth and qubit number increase. The result reveals that our method is competitive in improving computation result fidelity and it has the potential to demonstrate quantum advantage under the technical conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Transverse mode-encoded quantum gate on a silicon photonic chip

As an important degree of freedom (DoF) in integrated photonic circuits, the orthogonal transverse mode provides a promising and flexible way to increasing communication capability, for both classical and quantum information processing. To construct large-scale on-chip multimode multi-DoF quantum systems, a transverse mode-encoded controlled-NOT (CNOT) gate is necessary. Here, through design and integrate transverse mode-dependent directional coupler and attenuators on a silicon photonic chip, we demonstrate the first multimode implementation of a two-qubit quantum gate. With the aid of state preparation and analysis parts, we show the ability of the gate to entangle two separated transverse mode qubits with an average fidelity of $0.89\pm0.02$ and the achievement of 10 standard deviations of violations in the quantum nonlocality verification. In addition, a fidelity of $0.82\pm0.01$ was obtained from quantum process tomography used to completely characterize the CNOT gate. Our work paves the way for universal transverse mode-encoded quantum operations and large-scale multimode multi-DoF quantum systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature

Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration six-fold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature and the coherence time T2 can be reached to around 17.1 μs. Furthermore, investigation of fluorescence properties of single NV centers shows that they are room temperature photostable single photon sources at telecom range. Taking advantages of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator

The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-scale hut wire positioning. These properties make the Ge hut wire a promising candidate for the realization of strong coupling of spin to superconducting resonators and scalability for multiple qubit coupling. We have coupled a reflection line resonator to a hole double quantum dot (DQD) formed in Ge hut wire. The amplitude and phase responses of the microwave resonator revealed that the charge stability diagrams of the DQD are in good agreement with those obtained from transport measurements. The DQD interdot tunneling rate is shown to be tunable from 6.2 GHz to 8.5 GHz, which demonstrates the ability to adjust the frequency detuning between the qubit and the resonator. Furthermore, we achieved a hole-resonator coupling strength of up to 15 MHz, with a charge qubit decoherence rate of 0.28 GHz. Meanwhile the hole spin-resonator coupling rate was estimated to be 3 MHz. These results suggest that holes of a DQD in a Ge hut wire are dipole coupled to microwave photons, potentially enabling tunable hole spin-photon interactions in Ge with an inherent spin-orbit coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Entanglement Area Law for Shallow and Deep Quantum Neural Network States

A study of the artificial neural network representation of quantum many-body states is presented. The locality and entanglement properties of states for shallow and deep quantum neural networks are investigated in detail. By introducing the notion of local quasi-product states, for which the locally connected shallow feed-forward neural network states and restricted Boltzmann machine states are special cases, we show that Rényi entanglement entropies of all these states obey the entanglement area law. Besides, we also investigate the entanglement features of deep Boltzmann machine states and show that locality constraints imposed on the neural networks make the states obey the entanglement area law. Finally, as an application, we apply the notion of Rényi entanglement entropy to understanding the power of neural networks and show that image classification problems which can be efficiently solved must obey the area law.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hole spin in tunable Ge hut wire double quantum dot

Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We observe the signatures of Pauli spin blockade (PSB) with a large singlet-triplet energy splitting of ~1.1 meV and extract the g factor. By analyzing the the PSB leakage current, we obtain a spin-orbit length l_so of ~ 40-100 nm. Furthermore, we demonstrate the electric dipole spin resonance. These results lay a solid foundation for implementing high quality tunable hole spin-orbit qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime

Parametric amplification is widely used in nanoelectro-mechanical systems to enhance the transduced mechanical signals. Although parametric amplification has been studied in different mechanical resonator systems, the nonlinear dynamics involved receives less attention. Taking advantage of the excellent electrical and mechanical properties of graphene, we demonstrate electrical tunable parametric amplification using a doubly clamped graphene nanomechanical resonator. By applying external microwave pumping with twice the resonant frequency, we investigate parametric amplification in the nonlinear regime. We experimentally show that the extracted coefficient of the nonlinear Duffing force α and the nonlinear damping coefficient η vary as a function of external pumping power, indicating the influence of higher-order nonlinearity beyond the Duffing (~x^3) and van der Pol (~x^2 dx/dt) types in our device. Even when the higher-order nonlinearity is involved, parametric amplification still can be achieved in the nonlinear regime. The parametric gain increases and shows a tendency of saturation with increasing external pumping power. Further, the parametric gain can be electrically tuned by the gate voltage with a maximum gain of 10.2 dB achieved at the gate voltage of 19 V. Our results will benefit studies on nonlinear dynamics, especially nonlinear damping in graphene nanomechanical resonators that has been debated in the community over past decade.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Semiconductor Quantum Computation

Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The researches vary from initialization, control and readout of qubits, to the architecture of fault tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single- and two- qubit gate control in semiconductor. Till now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor was even demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

A tunable hybrid qubit in a triple quantum dot

We experimentally demonstrate quantum coherent dynamics of a triple-dot-based multi-electron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, and measured electrically, and has good coherence time as compared to gate time. Furthermore, the current multi-electron hybrid qubit has an operation frequency that is tunable in a wide range, from 2 to about 15 GHz. We provide qualitative understandings of the experimental observations by mapping it onto a three-electron system, and compare it with the double dot hybrid qubit and the all-exchange triple-dot qubit.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot

Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1) charge transition using a pulsed-gate technique and a charge sensor. We then use this spin blockade to detect Landau-Zener-Stückelberg (LZS) interference and coherent oscillations between the spin quadruplet and doublet states. Such studies add to our understandings of coherence and control properties of three-spin states in a double dot, which in turn would benefit the explorations into various qubit encoding schemes in semiconductor nanostructures.

0 citations0 reviewsNo code linkedOpen access