Abstract
We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of strong spin-orbit coupling. The temperature and back gate dependences of phase coherence length, spin-orbit relaxation time, and background conductance were studied. Specifically, we show the spin-orbit coupling strength can be modulated by more than five folds with an external electric field. These results suggest the Ge/Si nanowire system possesses strong and tunable spin-orbit interactions and may serve as a candidate for spintronics applications.
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