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Researcher profile

Hai-Ou Li

Hai-Ou Li contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.app-ph

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Published work

16 published item(s)

preprint2026arXiv

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a double quantum dot in a Germanium (Ge) hut wire (HW), which could help enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli spin blockade regime in the double quantum dot device.By adjusting the interdot tunnel coupling, we obtain an electric field tuned spin-orbit length lso = 2.0 - 48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator

The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-scale hut wire positioning. These properties make the Ge hut wire a promising candidate for the realization of strong coupling of spin to superconducting resonators and scalability for multiple qubit coupling. We have coupled a reflection line resonator to a hole double quantum dot (DQD) formed in Ge hut wire. The amplitude and phase responses of the microwave resonator revealed that the charge stability diagrams of the DQD are in good agreement with those obtained from transport measurements. The DQD interdot tunneling rate is shown to be tunable from 6.2 GHz to 8.5 GHz, which demonstrates the ability to adjust the frequency detuning between the qubit and the resonator. Furthermore, we achieved a hole-resonator coupling strength of up to 15 MHz, with a charge qubit decoherence rate of 0.28 GHz. Meanwhile the hole spin-resonator coupling rate was estimated to be 3 MHz. These results suggest that holes of a DQD in a Ge hut wire are dipole coupled to microwave photons, potentially enabling tunable hole spin-photon interactions in Ge with an inherent spin-orbit coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hole spin in tunable Ge hut wire double quantum dot

Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We observe the signatures of Pauli spin blockade (PSB) with a large singlet-triplet energy splitting of ~1.1 meV and extract the g factor. By analyzing the the PSB leakage current, we obtain a spin-orbit length l_so of ~ 40-100 nm. Furthermore, we demonstrate the electric dipole spin resonance. These results lay a solid foundation for implementing high quality tunable hole spin-orbit qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime

Parametric amplification is widely used in nanoelectro-mechanical systems to enhance the transduced mechanical signals. Although parametric amplification has been studied in different mechanical resonator systems, the nonlinear dynamics involved receives less attention. Taking advantage of the excellent electrical and mechanical properties of graphene, we demonstrate electrical tunable parametric amplification using a doubly clamped graphene nanomechanical resonator. By applying external microwave pumping with twice the resonant frequency, we investigate parametric amplification in the nonlinear regime. We experimentally show that the extracted coefficient of the nonlinear Duffing force α and the nonlinear damping coefficient η vary as a function of external pumping power, indicating the influence of higher-order nonlinearity beyond the Duffing (~x^3) and van der Pol (~x^2 dx/dt) types in our device. Even when the higher-order nonlinearity is involved, parametric amplification still can be achieved in the nonlinear regime. The parametric gain increases and shows a tendency of saturation with increasing external pumping power. Further, the parametric gain can be electrically tuned by the gate voltage with a maximum gain of 10.2 dB achieved at the gate voltage of 19 V. Our results will benefit studies on nonlinear dynamics, especially nonlinear damping in graphene nanomechanical resonators that has been debated in the community over past decade.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Semiconductor Quantum Computation

Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The researches vary from initialization, control and readout of qubits, to the architecture of fault tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single- and two- qubit gate control in semiconductor. Till now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor was even demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

A tunable hybrid qubit in a triple quantum dot

We experimentally demonstrate quantum coherent dynamics of a triple-dot-based multi-electron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, and measured electrically, and has good coherence time as compared to gate time. Furthermore, the current multi-electron hybrid qubit has an operation frequency that is tunable in a wide range, from 2 to about 15 GHz. We provide qualitative understandings of the experimental observations by mapping it onto a three-electron system, and compare it with the double dot hybrid qubit and the all-exchange triple-dot qubit.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot

Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1) charge transition using a pulsed-gate technique and a charge sensor. We then use this spin blockade to detect Landau-Zener-Stückelberg (LZS) interference and coherent oscillations between the spin quadruplet and doublet states. Such studies add to our understandings of coherence and control properties of three-spin states in a double dot, which in turn would benefit the explorations into various qubit encoding schemes in semiconductor nanostructures.

0 citations0 reviewsNo code linkedOpen access