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Researcher profile

Gang Cao

Gang Cao contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-elquant-phcond-mat.mtrl-sciastro-ph.HEComputer VisionMultimediacond-mat.supr-conphysics.app-ph

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Published work

41 published item(s)

preprint2026arXiv

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

The combined X-ray and $γ$-ray modeling of millisecond pulsars PSR J0030+0451 in the dissipative magnetospheres

Modeling of the NICER X-ray light curves of millisecond pulsars PSR J0030+0451 provides a strong evidence for the existence of non-dipole magnetic fields. We study the X-ray and $γ$-ray emission of PSR J0030+0451 in the dissipative dipole plus off-centred quadrupole magnetospheres. The dissipative FF+AE dipole magnetospheres by combining force-free (FF) and Aristotelian electrodynamics (AE) are solved by a 3D pseudo-spectral method in the rotating coordinate system. We use the FF+AE dipole plus off-centred quadrupole fields with minimum free parameters to reproduce two hotspot configurations found by the NICER observations. The X-ray and $γ$-ray emission from PSR J0030+0451 are simultaneously computed by using a ray-tracing method and a particle trajectory method. The modelled X-ray and $γ$-ray emission is then directly compared with those of PSR J0030+0451 from the NICER and Fermi observations. Our results can well reproduce the observed trends of the NICER X-ray and Fermi $γ$-ray emission for PSR J0030+0451.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Field-Tailoring Quantum Materials via Magneto-Synthesis: Metastable Metallic and Magnetically Suppressed Phases in a Trimer Iridate

We demonstrate that applying modest magnetic fields during high-temperature crystal growth can profoundly alter the structure and ground state of a spin-orbit-coupled, antiferromagnetic trimer lattice. Using BaIrO3 as a model system, whose ground state is intricately dictated by the trimer lattice, we show that magneto-synthesis, a field-assisted synthesis approach, stabilizes a structurally compressed, metastable metallic and magnetically suppressed phases inaccessible via conventional methods. These effects include a 0.85% reduction in unit cell, 4-order-of-magnitude decrease in resistivity, a 10-fold enhancement of the Sommerfeld coefficient, and the collapse of long-range magnetic order -- all intrinsic and bulk in origin. First-principles calculations confirm that the field-stabilized structure lies substantially above the ground state in energy, highlighting its metastable character. These large, coherent and correlated changes across multiple bulk properties, unlike those caused by dilute impurities, defects or off-stoichiometry, point to an intrinsic field-induced mechanism. The findings establish magneto-synthesis as a powerful new pathway for accessing non-equilibrium quantum phases in strongly correlated materials.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Effective Image Tampering Localization with Multi-Scale ConvNeXt Feature Fusion

With the widespread use of powerful image editing tools, image tampering becomes easy and realistic. Existing image forensic methods still face challenges of low generalization performance and robustness. In this letter, we propose an effective image tampering localization scheme based on ConvNeXt network and multi-scale feature fusion. Stacked ConvNeXt blocks are used as an encoder to capture hierarchical multi-scale features, which are then fused in decoder for locating tampered pixels accurately. Combined loss and effective data augmentation are adopted to further improve the model performance. Extensive experimental results show that localization performance of our proposed scheme outperforms other state-of-the-art ones. The source code will be available at https://github.com/ZhuHC98/ITL-SSN.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Acceleration of Histogram-Based Contrast Enhancement via Selective Downsampling

In this paper, we propose a general framework to accelerate the universal histogram-based image contrast enhancement (CE) algorithms. Both spatial and gray-level selective down-sampling of digital images are adopted to decrease computational cost, while the visual quality of enhanced images is still preserved and without apparent degradation. Mapping function calibration is novelly proposed to reconstruct the pixel mapping on the gray levels missed by downsampling. As two case studies, accelerations of histogram equalization (HE) and the state-of-the-art global CE algorithm, i.e., spatial mutual information and PageRank (SMIRANK), are presented detailedly. Both quantitative and qualitative assessment results have verified the effectiveness of our proposed CE acceleration framework. In typical tests, computational efficiencies of HE and SMIRANK have been speeded up by about 3.9 and 13.5 times, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

An automated approach for consecutive tuning of quantum dot arrays

Recent progress has shown that the dramatically increased number of parameters has become a major issue in tuning of multi-quantum dot devices. The complicated interactions between quantum dots and gate electrodes cause the manual tuning process to no longer be efficient. Fortunately, machine learning techniques can automate and speed up the tuning of simple quantum dot systems. In this letter, we extend the techniques to tune multi-dot devices. We propose an automated approach that combines machine learning, virtual gates and a local-to-global method to realize the consecutive tuning of quantum dot arrays by dividing them into subsystems. After optimizing voltage configurations and establishing virtual gates to control each subsystem independently, a quantum dot array can be efficiently tuned to the few-electron regime with appropriate interdot tunnel coupling strength. Our experimental results show that this approach can consecutively tune quantum dot arrays into an appropriate voltage range without human intervention and possesses broad application prospects in large-scale quantum dot devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Contrast Enhancement of Brightness-Distorted Images by Improved Adaptive Gamma Correction

As an efficient image contrast enhancement (CE) tool, adaptive gamma correction (AGC) was previously proposed by relating gamma parameter with cumulative distribution function (CDF) of the pixel gray levels within an image. ACG deals well with most dimmed images, but fails for globally bright images and the dimmed images with local bright regions. Such two categories of brightness-distorted images are universal in real scenarios, such as improper exposure and white object regions. In order to attenuate such deficiencies, here we propose an improved AGC algorithm. The novel strategy of negative images is used to realize CE of the bright images, and the gamma correction modulated by truncated CDF is employed to enhance the dimmed ones. As such, local over-enhancement and structure distortion can be alleviated. Both qualitative and quantitative experimental results show that our proposed method yields consistently good CE results.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a double quantum dot in a Germanium (Ge) hut wire (HW), which could help enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli spin blockade regime in the double quantum dot device.By adjusting the interdot tunnel coupling, we obtain an electric field tuned spin-orbit length lso = 2.0 - 48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Keldysh space control of charge dynamics in a strongly driven Mott insulator

The fate of a Mott insulator under strong low frequency optical driving conditions is a fundamental problem in quantum many-body dynamics. Using ultrafast broadband optical spectroscopy, we measured the transient electronic structure and charge dynamics of an off-resonantly pumped Mott insulator Ca$_2$RuO$_4$. We observe coherent bandwidth renormalization and nonlinear doublon-holon pair production occurring in rapid succession within a sub-100 femtosecond pump pulse duration. By sweeping the electric field amplitude, we demonstrate continuous bandwidth tuning and a Keldysh cross-over from a multi-photon absorption to quantum tunneling dominated pair production regime. Our results provide a procedure to control coherent and nonlinear heating processes in Mott insulators, facilitating the discovery of novel out-of-equilibrium phenomena in strongly correlated systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Mechanical control of physical properties in the van der Waals ferromagnet Cr2Ge2Te6 via application of electric current

Cr2Ge2Te6 is a van der Waals ferromagnet with a Curie temperature at 66 K. Here we report a swift change in the magnetic ground state upon application of small DC electric current, a giant yet anisotropic magnetoelectric effect, and a sharp, lattice-driven quantum switching manifested in the I-V characteristic of the bulk single-crystal Cr2Ge2Te6. At the heart of these observed phenomena is a newly uncovered, strongly anisotropic magnetoelastic coupling that enables strongly anisotropic responses of the lattice to application of electric current and/or magnetic field, thus the exotic phenomena in Cr2Ge2Te6. Such a rare mechanical tunability in the magnetic semiconductors promises tantalizing prospects for unique functional materials and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Spinons and damped phonons in spin-1/2 quantum-liquid Ba$_{4}$Ir${}_3$O${}_{10}$ observed by Raman scattering

In spin-1/2 Mott insulators, non-magnetic quantum liquid phases are often argued to arise when the system shows no magnetic ordering, but identifying positive signatures of these phases or related spinon quasiparticles can be elusive. Here we use Raman scattering to provide three signatures for spinons in a possible spin-orbit quantum liquid material Ba${}_4$Ir${}_3$O${}_{10}$: (1) A broad hump, which we show can arise from Luttinger Liquid spinons in Raman with parallel photon polarizations normal to 1D chains; (2) Strong phonon damping from phonon-spin coupling via the spin-orbit interaction; and (3) the absence of (1) and (2) in the magnetically ordered phase that is produced when 2% of Ba is substituted by Sr ((Ba${}_{0.98}$Sr${}_{0.02}$)${}_4$Ir${}_3$O${}_{10}$). The phonon damping via itinerant spinons seen in this quantum-liquid insulator suggests a new mechanism for enhancing thermoelectricity in strongly correlated conductors, through a neutral quantum liquid that need not affect electronic transport.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The pulsar gamma-ray emission from the high-resolution dissipative magnetospheres

The pulsar light curves and energy spectra are explored in dissipative pulsar magnetospheres with the Aristotelian electrodynamics (AE), where particle acceleration is fully balanced with radiation reaction. The AE magnetospheres with non-zero pair multiplicity are computed by a pseudo-spectral method in the co-moving frame. The dissipative region near the current sheet outside the LC is accurately captured by the high-resolution simulation. The pulsar light curves and spectra are computed by the test particle trajectory method including the influence of both the consistent accelerating electric field and radiation reaction. Our results can generally reproduce the double-peak light curves and the GeV cut-off energy spectra in agreement with the Fermi observations for the pair multiplicity $κ\gtrsim1$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A self-consistent leptonic-hadronic interpretation of the electromagnetic and neutrino emissions from blazar TXS 0506+056

The potential association between the blazar TXS 0506+056 and the neutrino event IceCube-170922A provides a unique opportunity to study the possible physical connection between the high-energy photons and neutrinos. We explore the correlated electromagnetic and neutrino emissions of blazar TXS 0506+056 by a self-consistent leptonic-hadronic model, taking into account particle stochastic acceleration and all relevant radiative processes self-consistently. The electromagnetic and neutrino spectra of blazar TXS 0506+056 are reproduced by the proton synchrotron and hybrid leptonic-hadronic models based on the proton-photon interactions. It is found that the hybrid leptonic-hadronic model can be used to better explain the observed X-ray and $γ$-ray spectra of blazar TXS 0506+056 than the proton synchrotron model. Moreover, the predicted neutrino spectrum of the hybrid leptonic-hadronic model is closer to the observed one compared to the proton synchrotron model. We suggest that the hybrid leptonic-hadronic model is more favored if the neutrino event IceCube-170922A is associated with the blazar TXS 0506+056.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Competition of three-dimensional magnetic phases in Ca$_2$Ru$_{1-x}$Fe$_x$O$_4$: A structural perspective

The crystalline and magnetic structures of Ca$_2$Ru$_{1-x}$Fe$_x$O$_4$ (x=0.02, 0.05, 0.08 and 0.12) have been studied using neutron and X-ray diffraction. The Fe-doping reduces the Ru-O bond length in both apical and planar directions. The smaller Ru(Fe)O$_6$ octahedron leads to its reduced distortion. The $Pbca$ space group is maintained in all the Fe-dopings, so is the octahedral flattening. Warming has a similar effect on the lattice to that of the Fe-doping in releasing the distorted octahedra but precipitates an abrupt octahedral elongation near the N$\acute{e}$el temperature. Two competing antiferromagnetic orders, $A$- and $B$-centered phases have been observed. The Fe-doping-relaxed crystal structure prefers the latter to the former. As the doping increases, the $B$-centered phase continuously grows at the cost of the $A$-centered one and eventually replaces it at x=0.12. The absence of the two-dimensional antiferromagnetic critical fluctuations above the magnetic transition temperature and the three-dimensional magnetic correlation below the transition, together with the anomalous lattice response, point to an important role of orbital degree of freedom in driving the magnetic phase competition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator

The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-scale hut wire positioning. These properties make the Ge hut wire a promising candidate for the realization of strong coupling of spin to superconducting resonators and scalability for multiple qubit coupling. We have coupled a reflection line resonator to a hole double quantum dot (DQD) formed in Ge hut wire. The amplitude and phase responses of the microwave resonator revealed that the charge stability diagrams of the DQD are in good agreement with those obtained from transport measurements. The DQD interdot tunneling rate is shown to be tunable from 6.2 GHz to 8.5 GHz, which demonstrates the ability to adjust the frequency detuning between the qubit and the resonator. Furthermore, we achieved a hole-resonator coupling strength of up to 15 MHz, with a charge qubit decoherence rate of 0.28 GHz. Meanwhile the hole spin-resonator coupling rate was estimated to be 3 MHz. These results suggest that holes of a DQD in a Ge hut wire are dipole coupled to microwave photons, potentially enabling tunable hole spin-photon interactions in Ge with an inherent spin-orbit coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hole spin in tunable Ge hut wire double quantum dot

Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We observe the signatures of Pauli spin blockade (PSB) with a large singlet-triplet energy splitting of ~1.1 meV and extract the g factor. By analyzing the the PSB leakage current, we obtain a spin-orbit length l_so of ~ 40-100 nm. Furthermore, we demonstrate the electric dipole spin resonance. These results lay a solid foundation for implementing high quality tunable hole spin-orbit qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum liquid from strange frustration in the trimer magnet Ba4Ir3O10

Quantum spin systems such as magnetic insulators usually show classical magnetic order, but such classical states can give way to quantum liquids with exotic entanglement through two known mechanisms of frustration: geometric frustration in lattices with triangle motifs, and spin-orbit-coupling frustration in the exactly solvable quantum liquid of Kitaev's honeycomb lattice. Here we present the experimental observation of a new kind of frustrated quantum liquid arising in an unlikely place: the magnetic insulator Ba4Ir3O10 where Ir3O12 trimers form an unfrustrated square lattice. Experimentally we find a quantum liquid state persisting down to 0.2 K that is stabilized by strong antiferromagnetic interaction with Curie-Weiss temperature - 766 K. The astonishing frustration parameter of 3800 is beyond any known iridate thus far. Heat capacity and thermal conductivity are both linear at low temperatures, a familiar feature in metals but here in an insulator pointing to an exotic quantum liquid state. A mere 2% Sr substitution for Ba produces long-range order at 130 K and destroys the linear-T features. Although the Ir4+(5d5) ions in Ba4Ir3O10 appear to form Ir3O12 trimers of face-sharing IrO6 octahedra, we propose that intra-trimer exchange is reduced and the lattice recombines into an array of coupled 1D chains with additional spins. An extreme limit of decoupled 1D chains can explain most but not all of the striking experimental observations, indicating that the inter-chain coupling plays an important role in the novel frustration mechanism leading to this quantum liquid.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Three-dimensional dissipative pulsar magnetospheres with Aristotelian electrodynamics

A good compromise between the resistive model and the PIC model is Aristotelian electrodynamics, which can include the back-reaction of the radiative photons onto particle motion and allow for a local dissipation where the force-free condition is violated. We study the dissipative pulsar magnetosphere with Aristotelian electrodynamics where particle acceleration is fully balanced by radiation. The expression for the current density is defined by introducing a pair multiplicity. The 3D structure of the pulsar magnetosphere is then presented by solving the time-dependent Maxwell equations using a pseudo-spectral algorithm. It is found that the dissipative magnetosphere approaches the force-free solution and the dissipative region is more restricted to the current sheet outside the light-cylinder (LC) as the pair multiplicity increases. The spatial extension of the dissipative region is self-consistently controlled by the pair multiplicity. Our simulations show the high magnetospheric dissipation outside the LC for the low pair multiplicity.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Towards Electrical-Current Control of Quantum States in Spin-Orbit-Coupled Matter

Novel materials, which often exhibit surprising or even revolutionary physical properties, are necessary for critical advances in technologies. Simultaneous control of structural and physical properties via a small electrical current is of great significance both fundamentally and technologically. Recent studies demonstrate that a combination of strong spin-orbit interactions and a distorted crystal structure in magnetic Mott insulators is sufficient to attain this long-desired goal. In this Topical Review, we highlight underlying properties of this class of materials and present two representative antiferromagnetic Mott insulators, namely, 4d-electron based Ca2RuO4 and 5d-electron based Sr2IrO4, as model systems. In essence, a small, applied electrical current engages with the lattice, critically reducing structural distortions, which in turn readily suppresses the antiferromagnetic and insulating state and subsequently results in emergent new states. While details may vary in different materials, at the heart of these phenomena are current-reduced lattice distortions, which, via spin-orbit interactions, dictate physical properties. Electrical current, which joins magnetic field, electric field, pressure, light, etc. as a new external stimulus, provides a new, key dimension for materials research, and also pose a series of intriguing questions that may provide the impetus for advancing our understanding of spin-orbit-coupled matter. This Topical Review provides a brief introduction, a few hopefully informative examples and some general remarks. It is by no means an exhaustive report of the current state of studies on this topic.

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preprint2020arXiv

Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime

Parametric amplification is widely used in nanoelectro-mechanical systems to enhance the transduced mechanical signals. Although parametric amplification has been studied in different mechanical resonator systems, the nonlinear dynamics involved receives less attention. Taking advantage of the excellent electrical and mechanical properties of graphene, we demonstrate electrical tunable parametric amplification using a doubly clamped graphene nanomechanical resonator. By applying external microwave pumping with twice the resonant frequency, we investigate parametric amplification in the nonlinear regime. We experimentally show that the extracted coefficient of the nonlinear Duffing force α and the nonlinear damping coefficient η vary as a function of external pumping power, indicating the influence of higher-order nonlinearity beyond the Duffing (~x^3) and van der Pol (~x^2 dx/dt) types in our device. Even when the higher-order nonlinearity is involved, parametric amplification still can be achieved in the nonlinear regime. The parametric gain increases and shows a tendency of saturation with increasing external pumping power. Further, the parametric gain can be electrically tuned by the gate voltage with a maximum gain of 10.2 dB achieved at the gate voltage of 19 V. Our results will benefit studies on nonlinear dynamics, especially nonlinear damping in graphene nanomechanical resonators that has been debated in the community over past decade.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Giant thermal magnetoconductivity in CrCl$_3$ and a general model for spin-phonon scattering

Insulating quantum magnets lie at the forefront both of fundamental research into quantum matter and of technological exploitation in the increasingly applied field of spintronics. In this context, the magnetic thermal transport is a particularly sensitive probe of the elementary spin and exotic topological excitations in unconventional magnetic insulators. However, magnetic contributions to heat conduction are invariably intertwined with lattice contributions, and thus the issue of spin-phonon coupling in determining the spin and thermal transport properties becomes more important with emergent topological magnetic system. Here we report the observation of an anomalously strong enhancement of the thermal conductivity, occurring at all relevant temperatures, in the layered honeycomb material CrCl$_3$ in the presence of an applied magnetic field. Away from the magnetically ordered phase at low temperatures and small fields, there is no coherent spin contribution to the heat conduction, and hence the effect must be caused by a strong suppression of the phonon thermal conductivity due to magnetic fluctuations, which are in turn suppressed by the field. We build an empirical model for the thermal conductivity of CrCl$_3$ within a formalism assuming an independently determined number of spin-flip processes and an efficiency of the phonon scattering events they mediate. By extracting the intrinsic phonon thermal conductivity we obtain a quantitative description at all fields and temperatures and demonstrate that the scattering efficiency is entirely independent of the field. In this way we use CrCl$_3$ as a model system to understand the interactions between spin and phonon excitations in the context of thermal transport. We anticipate that the completely general framework we introduce will have broad implications for the interpretation of transport phenomena in magnetic quantum materials.

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preprint2019arXiv

Persistent Insulator: Avoidance of Metallization at Megabar Pressures in Strongly Spin-Orbit-Coupled Sr2IrO4

It is commonly anticipated that an insulating state collapses in favor of an emergent metallic state at high pressures as the unit cell shrinks and the electronic bandwidth broadens to fill the insulating energy band gap. Here we report a rare insulating state that persists up to at least 185 GPa in the antiferromagnetic iridate Sr2IrO4, which is the archetypical spin-orbit-driven Jeff = 1/2 insulator. This study shows the electrical resistance of single-crystal Sr2IrO4 initially decreases with applied pressure, reaches a minimum in the range, 32 - 38 GPa, then abruptly rises to fully recover the insulating state with further pressure increases up to 185 GPa. Our synchrotron x-ray diffraction and Raman scattering data show the onset of the rapid increase in resistance is accompanied by a structural phase transition from the native tetragonal I41/acd phase to an orthorhombic Pbca phase (with much reduced symmetry) at 40.6 GPa. The clear-cut correspondence of these two anomalies is key to understanding the stability of the insulating state at megabar pressures: Pressure-induced, severe structural distortions prevent the expected metallization, despite the 26% volume compression attained at the highest pressure accessed in this study. Moreover, the resistance of Sr2IrO4 remains stable while the applied pressure is tripled from 61 GPa to 185 GPa. These results suggest that a novel type of electronic Coulomb correlation compensates the anticipated band broadening in strongly spin-orbit-coupled materials at megabar pressures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Semiconductor Quantum Computation

Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The researches vary from initialization, control and readout of qubits, to the architecture of fault tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single- and two- qubit gate control in semiconductor. Till now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor was even demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments.

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preprint2017arXiv

A tunable hybrid qubit in a triple quantum dot

We experimentally demonstrate quantum coherent dynamics of a triple-dot-based multi-electron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, and measured electrically, and has good coherence time as compared to gate time. Furthermore, the current multi-electron hybrid qubit has an operation frequency that is tunable in a wide range, from 2 to about 15 GHz. We provide qualitative understandings of the experimental observations by mapping it onto a three-electron system, and compare it with the double dot hybrid qubit and the all-exchange triple-dot qubit.

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preprint2017arXiv

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

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preprint2017arXiv

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

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preprint2016arXiv

Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot

Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1) charge transition using a pulsed-gate technique and a charge sensor. We then use this spin blockade to detect Landau-Zener-Stückelberg (LZS) interference and coherent oscillations between the spin quadruplet and doublet states. Such studies add to our understandings of coherence and control properties of three-spin states in a double dot, which in turn would benefit the explorations into various qubit encoding schemes in semiconductor nanostructures.

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preprint2013arXiv

Detection and measurement of spin-dependent dynamics in random telegraph signals

A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics from RTS and use it to demonstrate that these dynamics can be studied in the thermal energy regime. The tunneling rates of each spin state are independently measured in a finite external magnetic field. We confirm previous findings of a decrease in overall tunneling rates for the spin excited state compared to the ground state as an external magnetic field is increased.

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preprint2013arXiv

Single Crystal Growth, Transport, and Electronic Band Structure of YCoGa$_5$

Single crystal of YCoGa5 has been grown via Ga self-flux. In this paper, we report the single crystal growth, crystallographic parameters, resistivity, heat capacity, and band structure results of YCoGa5. YCoGa5 accommodates the HoCoGa5 type structure (space group P4/mmm (No. 123), Z = 1, a = 4.2131(6) A, c = 6.7929(13) A, which is isostructural to the extensively studied heavy fermion superconductor system CeMIn5 (M = Co, Rh, Ir) and the unconventional superconductor PuCoGa5 with Tc = 18.5 K. No superconductivity is observed down to 1.75 K. Band structure calculation results show that its band at the Fermi level is mainly composed of Co-3d and Ga-4p electrons states, which explains its similarity of physical properties to YbCoGa5 and LuCoGa5.

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preprint2012arXiv

Electron Number Dependence of Spin Triplet-Singlet Relaxation Time

In a GaAs single quantum dot, the relaxation time T_{1} between spin triplet and singlet states has been measured for the last few even number of electrons. The singlet-triplet energy separation E_{ST} is tuned as a control parameter for the comparison of T_{1} between different electron numbers. T_{1} shows a steady decrease from 2-electrons, 4-electrons, to 6-electrons, and we found this implies an enhancement of the spin-orbital coupling strength in a multi-electron quantum dot.

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preprint2011arXiv

Electron Spin Excited States Spectroscopy in a Quantum Dot Probed by QPC Back-action

The quantum point contact (QPC) back-action has been found to cause non-thermal-equilibrium excitations to the electron spin states in a quantum dot (QD). Here we use back-action as an excitation source to probe the spin excited states spectroscopy for both the odd and even electron numbers under a varying parallel magnetic field. For a single electron, we observed the Zeeman splitting. For two electrons, we observed the splitting of the spin triplet states $|T^{+}>$ and $|T^{0}>$ and found that back-action drives the singlet state $|S>$ overwhelmingly to $|T^{+}>$ other than $|T^{0}>$. All these information were revealed through the real-time charge counting statistics.

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preprint2010arXiv

Andreev reflection enhanced single hole tunneling in Ge/Si core/shell nanowire quantum dot

We experimentally study the electrical transport properties of Ge/Si core/shell nanowire device with two superconducting leads in the Coulomb blockade regime. Anomalous zero field magnetoconductance peaks are observed for the first time at the gate voltages where Coulomb blockade oscillation peaks present. Many evidences indicate this feature is due to Andreev reflection enhanced phase coherent single hole tunneling through the quantum dot, which can be suppressed by an external magnetic field without destroying the superconducting states in the electrodes.

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preprint2010arXiv

Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of strong spin-orbit coupling. The temperature and back gate dependences of phase coherence length, spin-orbit relaxation time, and background conductance were studied. Specifically, we show the spin-orbit coupling strength can be modulated by more than five folds with an external electric field. These results suggest the Ge/Si nanowire system possesses strong and tunable spin-orbit interactions and may serve as a candidate for spintronics applications.

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preprint2010arXiv

Tomography of the two-electron spin qubits in semiconductors

We propose an approach to reconstruct two-electron spin qubit states in semiconductor quantum dots by employing tomographic techniques. This procedure exploits the combination of fast gate operations on electron spins trapped in dots and dynamical nuclear polarization of the underlying Ga and As nuclei. The presented method can be an important tool in solid state quantum computation for complete characterization of qubit states and theirs correlations.

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