Source author record

Gang Cao

Gang Cao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall quant-ph cond-mat.str-el astro-ph.HE cond-mat.mtrl-sci Computer Vision cond-mat.supr-con Multimedia physics.app-ph Systems and Control

Catalog footprint

What is connected

76works

10topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2026arXiv

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

preprint2026arXiv

The combined X-ray and $γ$-ray modeling of millisecond pulsars PSR J0030+0451 in the dissipative magnetospheres

Modeling of the NICER X-ray light curves of millisecond pulsars PSR J0030+0451 provides a strong evidence for the existence of non-dipole magnetic fields. We study the X-ray and $γ$-ray emission of PSR J0030+0451 in the dissipative dipole plus off-centred quadrupole magnetospheres. The dissipative FF+AE dipole magnetospheres by combining force-free (FF) and Aristotelian electrodynamics (AE) are solved by a 3D pseudo-spectral method in the rotating coordinate system. We use the FF+AE dipole plus off-centred quadrupole fields with minimum free parameters to reproduce two hotspot configurations found by the NICER observations. The X-ray and $γ$-ray emission from PSR J0030+0451 are simultaneously computed by using a ray-tracing method and a particle trajectory method. The modelled X-ray and $γ$-ray emission is then directly compared with those of PSR J0030+0451 from the NICER and Fermi observations. Our results can well reproduce the observed trends of the NICER X-ray and Fermi $γ$-ray emission for PSR J0030+0451.

preprint2025arXiv

Field-Tailoring Quantum Materials via Magneto-Synthesis: Metastable Metallic and Magnetically Suppressed Phases in a Trimer Iridate

We demonstrate that applying modest magnetic fields during high-temperature crystal growth can profoundly alter the structure and ground state of a spin-orbit-coupled, antiferromagnetic trimer lattice. Using BaIrO3 as a model system, whose ground state is intricately dictated by the trimer lattice, we show that magneto-synthesis, a field-assisted synthesis approach, stabilizes a structurally compressed, metastable metallic and magnetically suppressed phases inaccessible via conventional methods. These effects include a 0.85% reduction in unit cell, 4-order-of-magnitude decrease in resistivity, a 10-fold enhancement of the Sommerfeld coefficient, and the collapse of long-range magnetic order -- all intrinsic and bulk in origin. First-principles calculations confirm that the field-stabilized structure lies substantially above the ground state in energy, highlighting its metastable character. These large, coherent and correlated changes across multiple bulk properties, unlike those caused by dilute impurities, defects or off-stoichiometry, point to an intrinsic field-induced mechanism. The findings establish magneto-synthesis as a powerful new pathway for accessing non-equilibrium quantum phases in strongly correlated materials.

preprint2023arXiv

Effective Image Tampering Localization with Multi-Scale ConvNeXt Feature Fusion

With the widespread use of powerful image editing tools, image tampering becomes easy and realistic. Existing image forensic methods still face challenges of low generalization performance and robustness. In this letter, we propose an effective image tampering localization scheme based on ConvNeXt network and multi-scale feature fusion. Stacked ConvNeXt blocks are used as an encoder to capture hierarchical multi-scale features, which are then fused in decoder for locating tampered pixels accurately. Combined loss and effective data augmentation are adopted to further improve the model performance. Extensive experimental results show that localization performance of our proposed scheme outperforms other state-of-the-art ones. The source code will be available at https://github.com/ZhuHC98/ITL-SSN.

preprint2022arXiv

Acceleration of Histogram-Based Contrast Enhancement via Selective Downsampling

In this paper, we propose a general framework to accelerate the universal histogram-based image contrast enhancement (CE) algorithms. Both spatial and gray-level selective down-sampling of digital images are adopted to decrease computational cost, while the visual quality of enhanced images is still preserved and without apparent degradation. Mapping function calibration is novelly proposed to reconstruct the pixel mapping on the gray levels missed by downsampling. As two case studies, accelerations of histogram equalization (HE) and the state-of-the-art global CE algorithm, i.e., spatial mutual information and PageRank (SMIRANK), are presented detailedly. Both quantitative and qualitative assessment results have verified the effectiveness of our proposed CE acceleration framework. In typical tests, computational efficiencies of HE and SMIRANK have been speeded up by about 3.9 and 13.5 times, respectively.

preprint2022arXiv

An automated approach for consecutive tuning of quantum dot arrays

Recent progress has shown that the dramatically increased number of parameters has become a major issue in tuning of multi-quantum dot devices. The complicated interactions between quantum dots and gate electrodes cause the manual tuning process to no longer be efficient. Fortunately, machine learning techniques can automate and speed up the tuning of simple quantum dot systems. In this letter, we extend the techniques to tune multi-dot devices. We propose an automated approach that combines machine learning, virtual gates and a local-to-global method to realize the consecutive tuning of quantum dot arrays by dividing them into subsystems. After optimizing voltage configurations and establishing virtual gates to control each subsystem independently, a quantum dot array can be efficiently tuned to the few-electron regime with appropriate interdot tunnel coupling strength. Our experimental results show that this approach can consecutively tune quantum dot arrays into an appropriate voltage range without human intervention and possesses broad application prospects in large-scale quantum dot devices.

preprint2022arXiv

Contrast Enhancement of Brightness-Distorted Images by Improved Adaptive Gamma Correction

As an efficient image contrast enhancement (CE) tool, adaptive gamma correction (AGC) was previously proposed by relating gamma parameter with cumulative distribution function (CDF) of the pixel gray levels within an image. ACG deals well with most dimmed images, but fails for globally bright images and the dimmed images with local bright regions. Such two categories of brightness-distorted images are universal in real scenarios, such as improper exposure and white object regions. In order to attenuate such deficiencies, here we propose an improved AGC algorithm. The novel strategy of negative images is used to realize CE of the bright images, and the gamma correction modulated by truncated CDF is employed to enhance the dimmed ones. As such, local over-enhancement and structure distortion can be alleviated. Both qualitative and quantitative experimental results show that our proposed method yields consistently good CE results.

preprint2022arXiv

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

preprint2022arXiv

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a double quantum dot in a Germanium (Ge) hut wire (HW), which could help enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli spin blockade regime in the double quantum dot device.By adjusting the interdot tunnel coupling, we obtain an electric field tuned spin-orbit length lso = 2.0 - 48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

preprint2022arXiv

Keldysh space control of charge dynamics in a strongly driven Mott insulator

The fate of a Mott insulator under strong low frequency optical driving conditions is a fundamental problem in quantum many-body dynamics. Using ultrafast broadband optical spectroscopy, we measured the transient electronic structure and charge dynamics of an off-resonantly pumped Mott insulator Ca$_2$RuO$_4$. We observe coherent bandwidth renormalization and nonlinear doublon-holon pair production occurring in rapid succession within a sub-100 femtosecond pump pulse duration. By sweeping the electric field amplitude, we demonstrate continuous bandwidth tuning and a Keldysh cross-over from a multi-photon absorption to quantum tunneling dominated pair production regime. Our results provide a procedure to control coherent and nonlinear heating processes in Mott insulators, facilitating the discovery of novel out-of-equilibrium phenomena in strongly correlated systems.

preprint2022arXiv

Mechanical control of physical properties in the van der Waals ferromagnet Cr2Ge2Te6 via application of electric current

Cr2Ge2Te6 is a van der Waals ferromagnet with a Curie temperature at 66 K. Here we report a swift change in the magnetic ground state upon application of small DC electric current, a giant yet anisotropic magnetoelectric effect, and a sharp, lattice-driven quantum switching manifested in the I-V characteristic of the bulk single-crystal Cr2Ge2Te6. At the heart of these observed phenomena is a newly uncovered, strongly anisotropic magnetoelastic coupling that enables strongly anisotropic responses of the lattice to application of electric current and/or magnetic field, thus the exotic phenomena in Cr2Ge2Te6. Such a rare mechanical tunability in the magnetic semiconductors promises tantalizing prospects for unique functional materials and devices.

preprint2022arXiv

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.

preprint2022arXiv

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.

preprint2021arXiv

Spinons and damped phonons in spin-1/2 quantum-liquid Ba$_{4}$Ir${}_3$O${}_{10}$ observed by Raman scattering

In spin-1/2 Mott insulators, non-magnetic quantum liquid phases are often argued to arise when the system shows no magnetic ordering, but identifying positive signatures of these phases or related spinon quasiparticles can be elusive. Here we use Raman scattering to provide three signatures for spinons in a possible spin-orbit quantum liquid material Ba${}_4$Ir${}_3$O${}_{10}$: (1) A broad hump, which we show can arise from Luttinger Liquid spinons in Raman with parallel photon polarizations normal to 1D chains; (2) Strong phonon damping from phonon-spin coupling via the spin-orbit interaction; and (3) the absence of (1) and (2) in the magnetically ordered phase that is produced when 2% of Ba is substituted by Sr ((Ba${}_{0.98}$Sr${}_{0.02}$)${}_4$Ir${}_3$O${}_{10}$). The phonon damping via itinerant spinons seen in this quantum-liquid insulator suggests a new mechanism for enhancing thermoelectricity in strongly correlated conductors, through a neutral quantum liquid that need not affect electronic transport.

preprint2021arXiv

The pulsar gamma-ray emission from the high-resolution dissipative magnetospheres

The pulsar light curves and energy spectra are explored in dissipative pulsar magnetospheres with the Aristotelian electrodynamics (AE), where particle acceleration is fully balanced with radiation reaction. The AE magnetospheres with non-zero pair multiplicity are computed by a pseudo-spectral method in the co-moving frame. The dissipative region near the current sheet outside the LC is accurately captured by the high-resolution simulation. The pulsar light curves and spectra are computed by the test particle trajectory method including the influence of both the consistent accelerating electric field and radiation reaction. Our results can generally reproduce the double-peak light curves and the GeV cut-off energy spectra in agreement with the Fermi observations for the pair multiplicity $κ\gtrsim1$.

preprint2020arXiv

A self-consistent leptonic-hadronic interpretation of the electromagnetic and neutrino emissions from blazar TXS 0506+056

The potential association between the blazar TXS 0506+056 and the neutrino event IceCube-170922A provides a unique opportunity to study the possible physical connection between the high-energy photons and neutrinos. We explore the correlated electromagnetic and neutrino emissions of blazar TXS 0506+056 by a self-consistent leptonic-hadronic model, taking into account particle stochastic acceleration and all relevant radiative processes self-consistently. The electromagnetic and neutrino spectra of blazar TXS 0506+056 are reproduced by the proton synchrotron and hybrid leptonic-hadronic models based on the proton-photon interactions. It is found that the hybrid leptonic-hadronic model can be used to better explain the observed X-ray and $γ$-ray spectra of blazar TXS 0506+056 than the proton synchrotron model. Moreover, the predicted neutrino spectrum of the hybrid leptonic-hadronic model is closer to the observed one compared to the proton synchrotron model. We suggest that the hybrid leptonic-hadronic model is more favored if the neutrino event IceCube-170922A is associated with the blazar TXS 0506+056.

preprint2020arXiv

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

preprint2020arXiv

Competition of three-dimensional magnetic phases in Ca$_2$Ru$_{1-x}$Fe$_x$O$_4$: A structural perspective

The crystalline and magnetic structures of Ca$_2$Ru$_{1-x}$Fe$_x$O$_4$ (x=0.02, 0.05, 0.08 and 0.12) have been studied using neutron and X-ray diffraction. The Fe-doping reduces the Ru-O bond length in both apical and planar directions. The smaller Ru(Fe)O$_6$ octahedron leads to its reduced distortion. The $Pbca$ space group is maintained in all the Fe-dopings, so is the octahedral flattening. Warming has a similar effect on the lattice to that of the Fe-doping in releasing the distorted octahedra but precipitates an abrupt octahedral elongation near the N$\acute{e}$el temperature. Two competing antiferromagnetic orders, $A$- and $B$-centered phases have been observed. The Fe-doping-relaxed crystal structure prefers the latter to the former. As the doping increases, the $B$-centered phase continuously grows at the cost of the $A$-centered one and eventually replaces it at x=0.12. The absence of the two-dimensional antiferromagnetic critical fluctuations above the magnetic transition temperature and the three-dimensional magnetic correlation below the transition, together with the anomalous lattice response, point to an important role of orbital degree of freedom in driving the magnetic phase competition.

preprint2020arXiv

Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator

The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-scale hut wire positioning. These properties make the Ge hut wire a promising candidate for the realization of strong coupling of spin to superconducting resonators and scalability for multiple qubit coupling. We have coupled a reflection line resonator to a hole double quantum dot (DQD) formed in Ge hut wire. The amplitude and phase responses of the microwave resonator revealed that the charge stability diagrams of the DQD are in good agreement with those obtained from transport measurements. The DQD interdot tunneling rate is shown to be tunable from 6.2 GHz to 8.5 GHz, which demonstrates the ability to adjust the frequency detuning between the qubit and the resonator. Furthermore, we achieved a hole-resonator coupling strength of up to 15 MHz, with a charge qubit decoherence rate of 0.28 GHz. Meanwhile the hole spin-resonator coupling rate was estimated to be 3 MHz. These results suggest that holes of a DQD in a Ge hut wire are dipole coupled to microwave photons, potentially enabling tunable hole spin-photon interactions in Ge with an inherent spin-orbit coupling.

preprint2020arXiv

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV.

preprint2020arXiv

Hole spin in tunable Ge hut wire double quantum dot

Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We observe the signatures of Pauli spin blockade (PSB) with a large singlet-triplet energy splitting of ~1.1 meV and extract the g factor. By analyzing the the PSB leakage current, we obtain a spin-orbit length l_so of ~ 40-100 nm. Furthermore, we demonstrate the electric dipole spin resonance. These results lay a solid foundation for implementing high quality tunable hole spin-orbit qubits.

preprint2020arXiv

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.

preprint2020arXiv

Quantum liquid from strange frustration in the trimer magnet Ba4Ir3O10

Quantum spin systems such as magnetic insulators usually show classical magnetic order, but such classical states can give way to quantum liquids with exotic entanglement through two known mechanisms of frustration: geometric frustration in lattices with triangle motifs, and spin-orbit-coupling frustration in the exactly solvable quantum liquid of Kitaev's honeycomb lattice. Here we present the experimental observation of a new kind of frustrated quantum liquid arising in an unlikely place: the magnetic insulator Ba4Ir3O10 where Ir3O12 trimers form an unfrustrated square lattice. Experimentally we find a quantum liquid state persisting down to 0.2 K that is stabilized by strong antiferromagnetic interaction with Curie-Weiss temperature - 766 K. The astonishing frustration parameter of 3800 is beyond any known iridate thus far. Heat capacity and thermal conductivity are both linear at low temperatures, a familiar feature in metals but here in an insulator pointing to an exotic quantum liquid state. A mere 2% Sr substitution for Ba produces long-range order at 130 K and destroys the linear-T features. Although the Ir4+(5d5) ions in Ba4Ir3O10 appear to form Ir3O12 trimers of face-sharing IrO6 octahedra, we propose that intra-trimer exchange is reduced and the lattice recombines into an array of coupled 1D chains with additional spins. An extreme limit of decoupled 1D chains can explain most but not all of the striking experimental observations, indicating that the inter-chain coupling plays an important role in the novel frustration mechanism leading to this quantum liquid.

preprint2020arXiv

Three-dimensional dissipative pulsar magnetospheres with Aristotelian electrodynamics

A good compromise between the resistive model and the PIC model is Aristotelian electrodynamics, which can include the back-reaction of the radiative photons onto particle motion and allow for a local dissipation where the force-free condition is violated. We study the dissipative pulsar magnetosphere with Aristotelian electrodynamics where particle acceleration is fully balanced by radiation. The expression for the current density is defined by introducing a pair multiplicity. The 3D structure of the pulsar magnetosphere is then presented by solving the time-dependent Maxwell equations using a pseudo-spectral algorithm. It is found that the dissipative magnetosphere approaches the force-free solution and the dissipative region is more restricted to the current sheet outside the light-cylinder (LC) as the pair multiplicity increases. The spatial extension of the dissipative region is self-consistently controlled by the pair multiplicity. Our simulations show the high magnetospheric dissipation outside the LC for the low pair multiplicity.

preprint2020arXiv

Towards Electrical-Current Control of Quantum States in Spin-Orbit-Coupled Matter

Novel materials, which often exhibit surprising or even revolutionary physical properties, are necessary for critical advances in technologies. Simultaneous control of structural and physical properties via a small electrical current is of great significance both fundamentally and technologically. Recent studies demonstrate that a combination of strong spin-orbit interactions and a distorted crystal structure in magnetic Mott insulators is sufficient to attain this long-desired goal. In this Topical Review, we highlight underlying properties of this class of materials and present two representative antiferromagnetic Mott insulators, namely, 4d-electron based Ca2RuO4 and 5d-electron based Sr2IrO4, as model systems. In essence, a small, applied electrical current engages with the lattice, critically reducing structural distortions, which in turn readily suppresses the antiferromagnetic and insulating state and subsequently results in emergent new states. While details may vary in different materials, at the heart of these phenomena are current-reduced lattice distortions, which, via spin-orbit interactions, dictate physical properties. Electrical current, which joins magnetic field, electric field, pressure, light, etc. as a new external stimulus, provides a new, key dimension for materials research, and also pose a series of intriguing questions that may provide the impetus for advancing our understanding of spin-orbit-coupled matter. This Topical Review provides a brief introduction, a few hopefully informative examples and some general remarks. It is by no means an exhaustive report of the current state of studies on this topic.

preprint2020arXiv

Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime

Parametric amplification is widely used in nanoelectro-mechanical systems to enhance the transduced mechanical signals. Although parametric amplification has been studied in different mechanical resonator systems, the nonlinear dynamics involved receives less attention. Taking advantage of the excellent electrical and mechanical properties of graphene, we demonstrate electrical tunable parametric amplification using a doubly clamped graphene nanomechanical resonator. By applying external microwave pumping with twice the resonant frequency, we investigate parametric amplification in the nonlinear regime. We experimentally show that the extracted coefficient of the nonlinear Duffing force α and the nonlinear damping coefficient η vary as a function of external pumping power, indicating the influence of higher-order nonlinearity beyond the Duffing (~x^3) and van der Pol (~x^2 dx/dt) types in our device. Even when the higher-order nonlinearity is involved, parametric amplification still can be achieved in the nonlinear regime. The parametric gain increases and shows a tendency of saturation with increasing external pumping power. Further, the parametric gain can be electrically tuned by the gate voltage with a maximum gain of 10.2 dB achieved at the gate voltage of 19 V. Our results will benefit studies on nonlinear dynamics, especially nonlinear damping in graphene nanomechanical resonators that has been debated in the community over past decade.

preprint2019arXiv

Giant thermal magnetoconductivity in CrCl$_3$ and a general model for spin-phonon scattering

Insulating quantum magnets lie at the forefront both of fundamental research into quantum matter and of technological exploitation in the increasingly applied field of spintronics. In this context, the magnetic thermal transport is a particularly sensitive probe of the elementary spin and exotic topological excitations in unconventional magnetic insulators. However, magnetic contributions to heat conduction are invariably intertwined with lattice contributions, and thus the issue of spin-phonon coupling in determining the spin and thermal transport properties becomes more important with emergent topological magnetic system. Here we report the observation of an anomalously strong enhancement of the thermal conductivity, occurring at all relevant temperatures, in the layered honeycomb material CrCl$_3$ in the presence of an applied magnetic field. Away from the magnetically ordered phase at low temperatures and small fields, there is no coherent spin contribution to the heat conduction, and hence the effect must be caused by a strong suppression of the phonon thermal conductivity due to magnetic fluctuations, which are in turn suppressed by the field. We build an empirical model for the thermal conductivity of CrCl$_3$ within a formalism assuming an independently determined number of spin-flip processes and an efficiency of the phonon scattering events they mediate. By extracting the intrinsic phonon thermal conductivity we obtain a quantitative description at all fields and temperatures and demonstrate that the scattering efficiency is entirely independent of the field. In this way we use CrCl$_3$ as a model system to understand the interactions between spin and phonon excitations in the context of thermal transport. We anticipate that the completely general framework we introduce will have broad implications for the interpretation of transport phenomena in magnetic quantum materials.

preprint2019arXiv

Persistent Insulator: Avoidance of Metallization at Megabar Pressures in Strongly Spin-Orbit-Coupled Sr2IrO4

It is commonly anticipated that an insulating state collapses in favor of an emergent metallic state at high pressures as the unit cell shrinks and the electronic bandwidth broadens to fill the insulating energy band gap. Here we report a rare insulating state that persists up to at least 185 GPa in the antiferromagnetic iridate Sr2IrO4, which is the archetypical spin-orbit-driven Jeff = 1/2 insulator. This study shows the electrical resistance of single-crystal Sr2IrO4 initially decreases with applied pressure, reaches a minimum in the range, 32 - 38 GPa, then abruptly rises to fully recover the insulating state with further pressure increases up to 185 GPa. Our synchrotron x-ray diffraction and Raman scattering data show the onset of the rapid increase in resistance is accompanied by a structural phase transition from the native tetragonal I41/acd phase to an orthorhombic Pbca phase (with much reduced symmetry) at 40.6 GPa. The clear-cut correspondence of these two anomalies is key to understanding the stability of the insulating state at megabar pressures: Pressure-induced, severe structural distortions prevent the expected metallization, despite the 26% volume compression attained at the highest pressure accessed in this study. Moreover, the resistance of Sr2IrO4 remains stable while the applied pressure is tripled from 61 GPa to 185 GPa. These results suggest that a novel type of electronic Coulomb correlation compensates the anticipated band broadening in strongly spin-orbit-coupled materials at megabar pressures.

preprint2019arXiv

Semiconductor Quantum Computation

Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The researches vary from initialization, control and readout of qubits, to the architecture of fault tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single- and two- qubit gate control in semiconductor. Till now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor was even demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.

preprint2018arXiv

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments.

preprint2017arXiv

A tunable hybrid qubit in a triple quantum dot

We experimentally demonstrate quantum coherent dynamics of a triple-dot-based multi-electron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, and measured electrically, and has good coherence time as compared to gate time. Furthermore, the current multi-electron hybrid qubit has an operation frequency that is tunable in a wide range, from 2 to about 15 GHz. We provide qualitative understandings of the experimental observations by mapping it onto a three-electron system, and compare it with the double dot hybrid qubit and the all-exchange triple-dot qubit.

preprint2017arXiv

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

preprint2017arXiv

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

preprint2016arXiv

An oblique pulsar magnetosphere with a plasma conductivity

An oblique pulsar magnetosphere with a plasma conductivity is studied by using a pseudo-spectral method. In the pseudo-spectral method, the time-dependent Maxwell equations are solved, both electric and magnetic fields are expanded in terms of the vector spherical harmonic (VSH) functions in spherical geometry and the divergencelessness of magnetic field is analytically enforced by a projection method. The pulsar magnetospheres in infinite (i. e., force-free approximation) and finite conductivities are simulated and a family of solutions that smoothly transition from the Deutsch vacuum solution to the force-free solution are obtained. The $\sin^2α$ dependence of the spin-down luminosity on the magnetic inclination angle $α$ in which the full electric current density are taken into account is retrieved in the force-free regime.

preprint2016arXiv

Charge Number Dependence of the Dephasing Rates of a Graphene Double Quantum Dot in a Circuit QED Architecture

We use an on-chip superconducting resonator as a sensitive meter to probe the properties of graphene double quantum dots at microwave frequencies. Specifically, we investigate the charge dephasing rates in a circuit quantum electrodynamics architecture. The dephasing rates strongly depend on the number of charges in the dots, and the variation has a period of four charges, over an extended range of charge numbers. Although the exact mechanism of this fourfold periodicity in dephasing rates is an open problem, our observations hint at the fourfold degeneracy expected in graphene from its spin and valley degrees of freedom.

preprint2016arXiv

Gaussian Process Model Predictive Control of Unknown Nonlinear Systems

Model Predictive Control (MPC) of an unknown system that is modelled by Gaussian Process (GP) techniques is studied in this paper. Using GP, the variances computed during the modelling and inference processes allow us to take model uncertainty into account. The main issue in using MPC to control systems modelled by GP is the propagation of such uncertainties within the control horizon. In this paper, two approaches to solve this problem, called GPMPC1 and GPMPC2, are proposed. With GPMPC1, the original Stochastic Model Predictive Control (SMPC) problem is relaxed to a deterministic nonlinear MPC based on a basic linearized GP local model. The resulting optimization problem, though non-convex, can be solved by the Sequential Quadratic Programming (SQP). By incorporating the model variance into the state vector, an extended local model is derived. This model allows us to relax the non-convex MPC problem to a convex one which can be solved by an active-set method efficiently. The performance of both approaches is demonstrated by applying them to two trajectory tracking problems. Results show that both GPMPC1 and GPMPC2 produce effective controls but GPMPC2 is much more efficient computationally.

preprint2016arXiv

Pressure-Induced Confined Metal from the Mott Insulator Sr3Ir2O7

The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high pressure electric resistance and resonant inelastic x ray scattering measurements on single crystal Sr3Ir2O7 up to 63 65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin orbit or Coulomb interactions in x-ray measurements, this novel insulator metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.

preprint2016arXiv

Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot

Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1) charge transition using a pulsed-gate technique and a charge sensor. We then use this spin blockade to detect Landau-Zener-Stückelberg (LZS) interference and coherent oscillations between the spin quadruplet and doublet states. Such studies add to our understandings of coherence and control properties of three-spin states in a double dot, which in turn would benefit the explorations into various qubit encoding schemes in semiconductor nanostructures.

preprint2016arXiv

Strongly-coupled nanotube electromechanical resonators

Coupling an electromechanical resonator with carbon-nanotube quantum dots is a significant method to control both the electronic charge and the spin quantum states. By exploiting a novel micro-transfer technique, we fabricate two strongly-coupled and electrically-tunable mechanical resonators on a single carbon nanotube for the first time. The frequency of the two resonators can be individually tuned by the bottom gates, and strong coupling is observed between the electron charge and phonon modes of each resonator. Furthermore, the conductance of either resonator can be nonlocally modulated by the phonon modes in the other resonator. Strong coupling is observed between the phonon modes of the two resonators, which provides an effective long distance electron-electron interaction. The generation of phonon-mediated-spin entanglement is also theoretically analyzed for the two resonators. This strongly-coupled nanotube electromechanical resonator array provides an experimental platform for future studies of the coherent electron-phonon interaction, the phonon mediated long-distance electron interaction, and entanglement state generation.

preprint2016arXiv

Tunable Hybrid Qubit in a GaAs Double Quantum Dot

We experimentally demonstrate a tunable hybrid qubit in a five-electron GaAs double quantum dot. The qubit is encoded in the (1,4) charge regime of the double dot and can be manipulated completely electrically. More importantly, dot anharmonicity leads to quasiparallel energy levels and a new anticrossing, which help preserve quantum coherence of the qubit and yield a useful working point. We have performed Larmor precession and Ramsey fringe experiments near the new working point and find that the qubit decoherence time is significantly improved over a charge qubit. This work shows a new way to encode a semiconductor qubit that is controllable and coherent.

preprint2015arXiv

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, thereby eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on quantum nano-devices on TMDCs for further researches.

preprint2015arXiv

Anomalous High-Energy Waterfall-Like Electronic Structure in 5d Transition Metal Oxide Sr2IrO4 with a Strong Spin-Orbit Coupling

The layered 5d transition metal oxides like Sr2IrO4 have attracted significant interest recently due to a number of exotic and new phenomena induced by the interplay between the spin-orbit coupling, bandwidth W and on-site Coulomb correlation U. In contrast to a metallic behavior expected from the Mott-Hubbard model due to more spatially extended 5d orbitals and moderate U, an insulating ground state has been observed in Sr2IrO4. Such an insulating behavior can be understood by an effective J_eff=1/2 Mott insulator model by incorporating both electron correlation and strong spin-orbital coupling, although its validity remains under debate at present. In particular, Sr2IrO4 exhibits a number of similarities to the high temperature cuprate superconductors in the crystal structure, electronic structure, magnetic structure, and even possible high temperature superconductivity. Here we report a new observation of the anomalous high energy electronic structure in Sr2IrO4. By taking high-resolution angle-resolved photoemission measurements on Sr2IrO4 over a wide energy range, we have revealed that the high energy electronic structures show unusual nearly-vertical bands that extend over a large energy range. Such anomalous high energy behaviors resemble the high energy waterfall features observed in the cuprate superconductors, adding one more important similarity between these two systems. While strong electron correlation plays an important role in producing high energy waterfall features in the cuprate superconductors, the revelation of the high energy anomalies in Sr2IrO4 points to a novel route in generating exotic electronic excitations from the strong spin-orbit coupling and a moderate electron correlation.

preprint2015arXiv

Confinement-Deconfinement Transition as an Indication of Spin-Liquid-Type Behavior in Na$_2$IrO$_3$

We use ultrafast optical spectroscopy to observe binding of charged single-particle excitations (SE) in the magnetically frustrated Mott insulator Na$_2$IrO$_3$. Above the antiferromagnetic ordering temperature ($T_N$) the system response is due to both Hubbard excitons (HE) and their constituent unpaired SE. The SE response becomes strongly suppressed immediately below $T_N$. We argue that this increase in binding energy is due to a unique interplay between the frustrated Kitaev and the weak Heisenberg-type ordering term in the Hamiltonian, mediating an effective interaction between the spin-singlet SE. This interaction grows with distance causing the SE to become trapped in the HE, similar to quark confinement inside hadrons. This binding of charged particles, induced by magnetic ordering, is a result of a confinement-deconfinement transition of spin excitations. This observation provides evidence for spin liquid type behavior which is expected in Na$_2$IrO$_3$.

preprint2015arXiv

Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4

The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the material's transport and optical properties and is of great importance for performance of semiconductor devices like diodes, transistors and lasers. The ability to tune its value would allow enhanced functionality and flexibility of future electronic and optical devices. Recently, an electrically tunable band gap was realized in a 2D material - electronically gated bilayer graphene [1-3]. Here we demonstrate the realization of an electrically tunable band gap in a 3D antiferromagnetic Mott insulator Sr2IrO4. Using nano-scale contacts between a sharpened Cu tip and a single crystal of Sr2IrO4, we apply a variable external electric field up to a few MV/m and demonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as 16%. We further demonstrate the feasibility of reversible resistive switching and electrically tunable anisotropic magnetoresistance,which provide evidence of correlations between electronic transport, magnetic order, and orbital states in this 5d oxide. Our findings suggest a promising path towards band gap engineering in 5d transition-metal oxides that could potentially lead to appealing technical solutions for next-generation electronic devices.

preprint2015arXiv

High-energy electronic excitations in Sr$_2$IrO$_4$ observed by Raman scattering

Spin-orbit interaction in Sr$_2$IrO$_4$ leads to the realization of the $J_{\mathrm{eff}}$ = 1/2 state and also induces an insulating behavior. Using large-shift Raman spectroscopy, we found two high-energy excitations of the d-shell multipletat at 690 meV and 680 meV with $A_{1g}$ and $B_{1g}$ symmetry respectively. As temperature decreases, the $A_{1g}$ and $B_{1g}$ peaks narrow, and the $A_{1g}$ peak shifts to higher energy while the energy of the $B_{1g}$ peak remains the same. When 25$\%$ of Ir is substituted with Rh the $A_{1g}$ peak softens by 10$\%$ but the $B_{1g}$ peak does not. We show that both pseudospin-flip and non-pseudosin-flip dd electronic transitions are Raman active, but only the latter are observed.

preprint2015arXiv

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with temperature. To understand its origin, we suspended the graphene QD above the substrate. In contrast to large area graphene FETs, we find that a suspended graphene QD has an almost-identical noise level as an unsuspended one. Tracking noise levels around the Coulomb blockade peak as a function of gate voltage yields potential fluctuations of order 1 "μeV", almost one order larger than in GaAs/GaAlAs QDs. Edge states rather than substrate-induced disorders, appear to dominate the 1/f noise, thus affecting the coherency of graphene nano-devices.

preprint2015arXiv

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.

preprint2015arXiv

The spectral simulations of axisymmetric force-free pulsar magnetosphere

A pseudo-spectral method with an absorbing outer boundary is used to solve a set of the time-dependent force-free equations. In the method, both electric and magnetic fields are expanded in terms of the vector spherical harmonic (VSH) functions in spherical geometry and the divergencelessness of magnetic field is analytically enforced by a projection method. Our simulations show that the Deutsch vacuum solution and the Michel monopole solution can be well reproduced by our pseudo-spectral code. Further the method is used to present the time-dependent simulation of the force-free pulsar magnetosphere for an aligned rotator. The simulations show that the current sheet in the equatorial plane can be resolved well, and the obtained spin-down luminosity in the steady state is in good agreement with the value given by Spitkovsky (2006).

preprint2014arXiv

Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4

We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of MR shows a crossover from four-fold to two-fold symmetry in response to an increasing magnetic field with angular variations in resistance from 1-14%. We tentatively attribute the four-fold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of AFM-coupled moments in Sr2IrO4. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys/oxides (0.1-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also better harness the power of spintronics in a more technically favorable fashion.

preprint2014arXiv

Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits

A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit gate, such as a controlled-NOT (CNOT) gate. Semiconductor quantum dot qubits are a leading approach for the physical implementation of quantum computation, due to their potential for large-scale integration. Two-qubit gate operations have been so far only demonstrated in individual electron spin-based quantum dot systems. Due to the relatively short de-coherence time, charge qubits in quantum dots are generally considered to be inferior for going beyond single qubit level. Here, we demonstrate the benchmarking CNOT gate in two capacitively coupled charge qubits, each consisting of an electron confined in a GaAs/AlGaAs double quantum dot. Owing to the strong inter-qubit coupling strength, gate operations with a clock speed up to 5GHz has been realized. A processing tomography shows encouragingly that the universal two-qubit gate operations have comparable fidelities to that of spin-based two-qubit gates. Our results suggest that semiconductor charge qubits have a considerable potential for scalable quantum computing and may stimulate the use of long-range Coulomb interaction for coherent quantum control in other devices.

preprint2014arXiv

Coupling two distant double quantum dots to a microwave resonator

With recent advances in the circuit quantum electrodynamics (cQED) architecture, hybrid systems that couple nano-devices to microwave resonators have been developing rapidly. Here we report an experimental demonstration of two graphene double quantum dots (DQDs) coupled over a distance of up to 60 μm, through a microwave resonator. We jointly measure the two DQDs' coupling to the resonator, which causes a nonlinear response in the resonator reflection amplitude in the vicinity of the degeneracy points of the two DQDs. This phenomenon is explained by the Tavis-Cummings (T-C) mode. We further characterize this nonlocal coupling by measuring the correlation between the DC currents in the two DQDs. This correlation is observed to be strongly dependent on the average photon number in the resonator. Our results explore T-C physics in electronic transport, and also contribute to the study of nonlocal transport and future implementations of remote electronic entanglement.

preprint2014arXiv

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

preprint2014arXiv

Hallmarks of the Mott-Metal Crossover in the Hole Doped J=1/2 Mott insulator Sr2IrO4

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. We investigate the evolution of electronic structure and dynamics of the hole-doped J=1/2 Mott insulator Sr2IrO4. The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple exotic features previously observed in doped cuprates - pseudogaps, Fermi "arcs", and marginal-Fermi-liquid-like electronic scattering rates, despite different mechanisms that forbid electron double-occupancy. We argue these universal features of the Mott-metal crossover are not related to preformed electron pairing, quantum criticality or density-wave formation as most commonly discussed. Instead, short-range antiferromagnetic correlations may play an indispensible role.

preprint2014arXiv

Introduction of DC line structures into a superconducting microwave 3D cavity

We report a technique that can noninvasively add multiple DC wires into a 3D superconducting microwave cavity for electronic devices that require DC electrical terminals. We studied the influence of our DC lines on the cavity performance systematically. We found that the quality factor of the cavity is reduced if any of the components of the electrical wires cross the cavity equipotential planes. Using this technique, we were able to incorporate a quantum dot (QD) device into a 3D cavity. We then controlled and measured the QD transport signal using the DC lines. We have also studied the heating effects of the QD by the microwave photons in the cavity.

preprint2014arXiv

Local density of states study of a spin-orbit-coupling induced Mott insulator Sr$_2$IrO$_4$

We present scanning tunneling microscopy and spectroscopy experiments on the novel J_eff = 1/2 Mott insulator Sr2IrO4. Local density of states (LDOS) measurements show an intrinsic insulating gap of 620 meV that is asymmetric about the Fermi level and is larger than previously reported values. The size of this gap suggests that Sr2IrO4 is likely a Mott rather than Slater insulator. In addition, we found a small number of native defects which create in-gap spectral weight. Atomically resolved LDOS measurements on and off the defects shows that this energy gap is quite fragile. Together the extended nature of the 5d electrons and poor screening of defects help explain the elusive nature of this gap.

preprint2014arXiv

Observation of metallic surface states in the strongly correlated Kitaev-Heisenberg candidate Na2IrO3

We report high-resolution angle-resolved photoemission spectroscopy measurements on the honeycomb iridate Na2IrO3. Our measurements reveal the existence of a metallic surface band feature crossing the Fermi level with nearly linear dispersion and an estimated surface carrier density of 3.2 $\times$ 10$^{13}$ cm$^{-2}$, which has not been theoretically predicted or experimentally observed, and provides the first evidence for metallic behavior on the boundary of this material, whereas the bulk bands exhibit a robust insulating gap. We further show the lack of theoretically predicted Dirac cones at the $\overline{M}$ points of the surface Brillouin zone, which confirms the absence of a stacked quantum spin Hall phase in this material. Our data indicates that the surface ground state of this material is exotic and metallic, unlike as predicted in theory, and establishes Na2IrO3 as a rare example of a strongly correlated spin-orbit insulator with surface metallicity.

preprint2014arXiv

The hadronic origin of hard gamma-ray spectrum from blazar 1ES 1101-232

The very hard $γ$-ray spectrum from distant blazars challenges the traditional synchrotron self-Compton (SSC) model, which may indicate that there is the contribution of an additional high-energy component beyond the SSC emission. In this paper, we study the possible origin of the hard $γ$-ray spectrum from distant blazars. We develop a model to explain the hard $γ$-ray spectrum from blazar 1ES 1101-232. In the model, the optical and X-ray radiation would come from the synchrotron radiation of primary electrons and secondary pairs, the GeV emission would be produced by the SSC process, however, the hard $γ$-ray spectrum would originate from the decay of neutral pion produced through proton-photon interactions with the synchrotron radiation photons within the jet. Our model can explain the observed SED of 1ES 1101-232 well, especially the very hard $γ$-ray spectrum. However, our model requires the very large proton power to efficiently produce the $γ$-ray through proton-photon interactions.

preprint2014arXiv

Ultrafast Manipulation of a Double Quantum Dot via Lyapunov Control Method

For a double quantum dot (DQD) system, here we propose alternative ultrafast manipulate approach: Lyapunov control method, to transfer the state from R to L on the picosecond scale, orders of magnitude faster and transfer probability higher than the previously measured electrically controlled charge- or spin-based quits. The control laws are composed of two-direction components, one is used to eliminate the dissipation in the system, another is used to transfer the state. The control theory's stability ensures the system can be transferred to the target state in high probability, and the coefficients in control laws leads very fast convergence. The role of eliminating the dissipation plays the suppression of decoherence effect. Numerical simulation results show that under the realistic implementation conditions, the transfer probability and fidelity can be increased up to 98.79% and 98.97%, respectively. This is the first result directly applicable to a DQD system's state transferring using the Lyapunov control method. We also give specific experimental realization scheme.

preprint2013arXiv

Detection and measurement of spin-dependent dynamics in random telegraph signals

A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics from RTS and use it to demonstrate that these dynamics can be studied in the thermal energy regime. The tunneling rates of each spin state are independently measured in a finite external magnetic field. We confirm previous findings of a decrease in overall tunneling rates for the spin excited state compared to the ground state as an external magnetic field is increased.

preprint2013arXiv

Direct observation of the Mott gap in strontium iridate with a scanning tunneling microscope

The single-layer Mott insulator strontium iridate Sr$_2$IrO$_4$ was studied using a scanning tunneling microscope. This measurement technique is unique due to the transport properties of this Mott insulator allowing tunneling measurements to be performed, even at cryogenic temperatures. We obtained high-resolution images of the sample surface and the differential tunneling conductance at different cryogenic temperatures. The differential conductance is a direct measurement of the local electronic density of states which provided an insulating gap consistent with optical conductivity, angle resolved photoemission spectroscopy and resonant inelastic x-ray scattering (RIXS) experiments. The observed widths of these features is broader than predicted by the Slater approximation and narrower than predicted by dynamical mean field theory. Additionally, the observed density of states due to magnetic fluctuations is found in the derivative of the differential conductance and is consistent with results from Raman scattering and RIXS. At low temperatures, additional low-energy features were observed, suggesting a change in the dispersion of the collective magnetic excitations, which is consistent with the magnetic susceptibility.

preprint2013arXiv

Observation of Kondo Effect in a Quadruple Quantum Dots

We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential conductance dI/dV is measured in the upper DQDs as a function of source drain bias. It is found to exhibit multiple peaks, including a zero-bias peak, where the number of peaks exceeds five. Alternatively, tuning the lower DQDs yielded regions of four peaks. In addition, a Kondo-effect switcher is demonstrated, using the lower DQDs as the controller.

preprint2013arXiv

On the location of the gamma-ray emission region for 21 flat spectrum radio quasars with quasi-simultaneous observations

We try to infer the location of the GeV emission region for 21 flat spectrum radio quasars (FSRQs) with quasi-simultaneous spectral energy distributions (SEDs), in which the SEDs of 21 FSRQs are reproduced by the one-zone leptonic model including the synchrotron-self Compton (SSC) and external Compton (EC) processes. We suggest that the X-ray emission could be produced by the SSC process and the GeV emission could come from the EC process. The EC emission could originate from the inverse Compton (IC) scattering of photons from the broad line region (BLR) and accretion disk or dust torus by the same electron population, which mainly depend on the location of the $γ$-ray emission region. We propose a method to constrain the location of the GeV emission region based on the spectral shapes. When the GeV emission is located within the BLR, the IC scattering could occur at the Klein-Nishina regime and produce a broken/steep spectrum in the GeV energy band. When the GeV emission is produced outside the BLR, the IC scattering could take place at the Thomson regime and the GeV spectrum would have the same spectral index as the optical-infrared spectrum. We infer that the location of the GeV emission region is inside the BLR for 5 FSRQs and beyond the BLR for 16 FSRQs. Our results show that the ratio of the magnetic field and electron energy density is close to equipartition condition for 21 FSRQs.

preprint2013arXiv

Particle Acceleration And Emission Processes In Mrk 421

We investigate the X-ray and $γ$-ray flares of Mrk 421 on 2008 June 6-15 using the synchrotron self- Compton(SSC) model with electron acceleration, in which an evident correlation between the X-ray and $γ$-ray bands appears, while no significant correlation between the optical and X-ray band is observed. We argue that the emission from Mrk 421 may originate from two different components. One is the steady component from the outer region that is mainly attributed to the optical band, in which the electrons are accelerated by first-order Fermi acceleration mechanism. We use a steady electron spectrum to produce the synchrotron self-Compton emission. The other is the variable component from the inner region, in which the electrons are accelerated by the stochastic acceleration process. We use the time-dependent SSC model to produce the emission from the variable component. We suggest that the flares are due to the hardening of the electron spectrum under the process of the stochastic acceleration, which leads to the hardening of the observed spectrum in the X-ray and $γ$-ray bands. Furthermore, we find that the energy densities of electrons and magnetic fields are near equipartition in both jet regions.

preprint2013arXiv

Photon-assisted-tunneling in a coupled double quantum dot out of thermal equilibrium

We perform photon-assisted-tunneling (PAT) experiments on a GaAs double quantum dot device under high microwave excitation power. Photon-assisted absorption of up to 14 photons is observed, when electron temperature (>1K) are far above the lattice temperature. Signatures of Landau-Zener-Stückelberg (LZS) interference are found even in this non-equilibrium PAT spectrum. In addition, the charge state relaxation time T_1~8ns measured in this out of thermal equilibrium double quantum dot is in agreement with other previous reports.

preprint2013arXiv

Single Crystal Growth, Transport, and Electronic Band Structure of YCoGa$_5$

Single crystal of YCoGa5 has been grown via Ga self-flux. In this paper, we report the single crystal growth, crystallographic parameters, resistivity, heat capacity, and band structure results of YCoGa5. YCoGa5 accommodates the HoCoGa5 type structure (space group P4/mmm (No. 123), Z = 1, a = 4.2131(6) A, c = 6.7929(13) A, which is isostructural to the extensively studied heavy fermion superconductor system CeMIn5 (M = Co, Rh, Ir) and the unconventional superconductor PuCoGa5 with Tc = 18.5 K. No superconductivity is observed down to 1.75 K. Band structure calculation results show that its band at the Fermi level is mainly composed of Co-3d and Ga-4p electrons states, which explains its similarity of physical properties to YbCoGa5 and LuCoGa5.

preprint2013arXiv

Symmetric reflection line resonator for semiconductor circuit quantum electrodynamics

We have designed and fabricated a half-wavelength reflection line resonator (RLR) that consists of a pair of two coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a square of two dimensional electron gas under the resonator, a large range of the quality factors can be obtained. Energy loss in the two-dimensional electron gas can be minimized, thus realizing a versatile resonator suitable for integration with semiconductor quantum circuits.

preprint2013arXiv

Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates

Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene nano-structures hinder the ability to control the inter-dot tunnel coupling, tc,the most important property of the artificial molecule. Here we report measurements of tc in an all-metal-gates-tuned graphene DQD. We find that tc can be controlled continuously about a factor of four by employing a single gate. Furthermore, tc, can be changed monotonically about another factor of four as electrons are gate-pumped into the dot one by one. The results suggest that the strength of tunnel coupling in etched DQDs can be varied in a rather broad range and in a controllable manner, which improves the outlook to use graphene as a base material for qubit applications.

preprint2012arXiv

Electron Number Dependence of Spin Triplet-Singlet Relaxation Time

In a GaAs single quantum dot, the relaxation time T_{1} between spin triplet and singlet states has been measured for the last few even number of electrons. The singlet-triplet energy separation E_{ST} is tuned as a control parameter for the comparison of T_{1} between different electron numbers. T_{1} shows a steady decrease from 2-electrons, 4-electrons, to 6-electrons, and we found this implies an enhancement of the spin-orbital coupling strength in a multi-electron quantum dot.

preprint2011arXiv

Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

In a single quantum dot (QD), the electrons were driven out of thermal equilibrium by the back-action from a nearby quantum point contact (QPC). We found the driving to energy excited states can be probed with the random telegraph signal (RTS) statistics, when the excited states relax slowly compared with RTS tunneling rate. We studied the last few electrons, and found back-action driven spin singlet-triplet (S-T) excitation for and only for all the even number of electrons. We developed a phenomenological model to quantitatively characterize the spin S-T excitation rate, which enabled us to evaluate the influence of back-action on spin S-T based qubit operations.

preprint2011arXiv

Back-action Induced Non-equilibrium Effect in Electron Charge Counting Statistics

We report our study of the real-time charge counting statistics measured by a quantum point contact (QPC) coupled to a single quantum dot (QD) under different back-action strength. By tuning the QD-QPC coupling or QPC bias, we controlled the QPC back-action which drives the QD electrons out of thermal equilibrium. The random telegraph signal (RTS) statistics showed strong and tunable non-thermal-equilibrium saturation effect, which can be quantitatively characterized as a back-action induced tunneling out rate. We found that the QD-QPC coupling and QPC bias voltage played different roles on the back-action strength and cut-off energy.

preprint2011arXiv

Electron Spin Excited States Spectroscopy in a Quantum Dot Probed by QPC Back-action

The quantum point contact (QPC) back-action has been found to cause non-thermal-equilibrium excitations to the electron spin states in a quantum dot (QD). Here we use back-action as an excitation source to probe the spin excited states spectroscopy for both the odd and even electron numbers under a varying parallel magnetic field. For a single electron, we observed the Zeeman splitting. For two electrons, we observed the splitting of the spin triplet states $|T^{+}>$ and $|T^{0}>$ and found that back-action drives the singlet state $|S>$ overwhelmingly to $|T^{+}>$ other than $|T^{0}>$. All these information were revealed through the real-time charge counting statistics.

preprint2011arXiv

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

preprint2010arXiv

A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor

We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well as excited spectrum in the dot, even in the regime where the current through the quantum dot is too small to be measured by conventional transport means. The graphene based quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit in a nuclear-spin-free quantum world.

preprint2010arXiv

Andreev reflection enhanced single hole tunneling in Ge/Si core/shell nanowire quantum dot

We experimentally study the electrical transport properties of Ge/Si core/shell nanowire device with two superconducting leads in the Coulomb blockade regime. Anomalous zero field magnetoconductance peaks are observed for the first time at the gate voltages where Coulomb blockade oscillation peaks present. Many evidences indicate this feature is due to Andreev reflection enhanced phase coherent single hole tunneling through the quantum dot, which can be suppressed by an external magnetic field without destroying the superconducting states in the electrodes.

preprint2010arXiv

Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of strong spin-orbit coupling. The temperature and back gate dependences of phase coherence length, spin-orbit relaxation time, and background conductance were studied. Specifically, we show the spin-orbit coupling strength can be modulated by more than five folds with an external electric field. These results suggest the Ge/Si nanowire system possesses strong and tunable spin-orbit interactions and may serve as a candidate for spintronics applications.

preprint2010arXiv

Tomography of the two-electron spin qubits in semiconductors

We propose an approach to reconstruct two-electron spin qubit states in semiconductor quantum dots by employing tomographic techniques. This procedure exploits the combination of fast gate operations on electron spins trapped in dots and dynamical nuclear polarization of the underlying Ga and As nuclei. The presented method can be an important tool in solid state quantum computation for complete characterization of qubit states and theirs correlations.

Gang Cao

What is connected

Connect this record

See the researcher in context

Building this map preview

76 published item(s)

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

The combined X-ray and $γ$-ray modeling of millisecond pulsars PSR J0030+0451 in the dissipative magnetospheres

Field-Tailoring Quantum Materials via Magneto-Synthesis: Metastable Metallic and Magnetically Suppressed Phases in a Trimer Iridate

Effective Image Tampering Localization with Multi-Scale ConvNeXt Feature Fusion

Acceleration of Histogram-Based Contrast Enhancement via Selective Downsampling

An automated approach for consecutive tuning of quantum dot arrays

Contrast Enhancement of Brightness-Distorted Images by Improved Adaptive Gamma Correction

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Keldysh space control of charge dynamics in a strongly driven Mott insulator

Mechanical control of physical properties in the van der Waals ferromagnet Cr2Ge2Te6 via application of electric current

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

Spinons and damped phonons in spin-1/2 quantum-liquid Ba$_{4}$Ir${}_3$O${}_{10}$ observed by Raman scattering

The pulsar gamma-ray emission from the high-resolution dissipative magnetospheres

A self-consistent leptonic-hadronic interpretation of the electromagnetic and neutrino emissions from blazar TXS 0506+056

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Competition of three-dimensional magnetic phases in Ca$_2$Ru$_{1-x}$Fe$_x$O$_4$: A structural perspective

Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

Hole spin in tunable Ge hut wire double quantum dot

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

Quantum liquid from strange frustration in the trimer magnet Ba4Ir3O10

Three-dimensional dissipative pulsar magnetospheres with Aristotelian electrodynamics

Towards Electrical-Current Control of Quantum States in Spin-Orbit-Coupled Matter

Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime

Giant thermal magnetoconductivity in CrCl$_3$ and a general model for spin-phonon scattering

Persistent Insulator: Avoidance of Metallization at Megabar Pressures in Strongly Spin-Orbit-Coupled Sr2IrO4

Semiconductor Quantum Computation

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

A tunable hybrid qubit in a triple quantum dot

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum dot behavior in transition metal dichalcogenides nanostructures

An oblique pulsar magnetosphere with a plasma conductivity

Charge Number Dependence of the Dephasing Rates of a Graphene Double Quantum Dot in a Circuit QED Architecture

Gaussian Process Model Predictive Control of Unknown Nonlinear Systems

Pressure-Induced Confined Metal from the Mott Insulator Sr3Ir2O7

Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot

Strongly-coupled nanotube electromechanical resonators

Tunable Hybrid Qubit in a GaAs Double Quantum Dot

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Anomalous High-Energy Waterfall-Like Electronic Structure in 5d Transition Metal Oxide Sr2IrO4 with a Strong Spin-Orbit Coupling

Confinement-Deconfinement Transition as an Indication of Spin-Liquid-Type Behavior in Na$_2$IrO$_3$

Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4

High-energy electronic excitations in Sr$_2$IrO$_4$ observed by Raman scattering

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

The spectral simulations of axisymmetric force-free pulsar magnetosphere

Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4

Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits

Coupling two distant double quantum dots to a microwave resonator

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

Hallmarks of the Mott-Metal Crossover in the Hole Doped J=1/2 Mott insulator Sr2IrO4

Introduction of DC line structures into a superconducting microwave 3D cavity

Local density of states study of a spin-orbit-coupling induced Mott insulator Sr$_2$IrO$_4$

Observation of metallic surface states in the strongly correlated Kitaev-Heisenberg candidate Na2IrO3

The hadronic origin of hard gamma-ray spectrum from blazar 1ES 1101-232

Ultrafast Manipulation of a Double Quantum Dot via Lyapunov Control Method

Detection and measurement of spin-dependent dynamics in random telegraph signals

Direct observation of the Mott gap in strontium iridate with a scanning tunneling microscope

Observation of Kondo Effect in a Quadruple Quantum Dots

On the location of the gamma-ray emission region for 21 flat spectrum radio quasars with quasi-simultaneous observations

Particle Acceleration And Emission Processes In Mrk 421

Photon-assisted-tunneling in a coupled double quantum dot out of thermal equilibrium

Single Crystal Growth, Transport, and Electronic Band Structure of YCoGa$_5$

Symmetric reflection line resonator for semiconductor circuit quantum electrodynamics

Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates

Electron Number Dependence of Spin Triplet-Singlet Relaxation Time

Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

Back-action Induced Non-equilibrium Effect in Electron Charge Counting Statistics

Electron Spin Excited States Spectroscopy in a Quantum Dot Probed by QPC Back-action

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene

A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor

Andreev reflection enhanced single hole tunneling in Ge/Si core/shell nanowire quantum dot