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Source author record

George I. Bourianoff

George I. Bourianoff appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.dis-nnComputer Visionnlin.PS

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Published work

5 published item(s)

preprint2014arXiv

Convolutional Networks for Image Processing by Coupled Oscillator Arrays

A coupled oscillator array is shown to approximate convolutions with Gabor filters for image processing tasks. Pixelated image fragments and filter functions are converted to voltages, differenced, and input into a corresponding array of weakly coupled Voltage Controlled Oscillators (VCOs). This is referred to as Frequency Shift Keying (FSK). Upon synchronization of the array, the common node amplitude provides a metric for the degree of match between the image fragment and the filter function. The optimal oscillator parameters for synchronization are determined and favor a moderate value of the Q-factor.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coupled-Oscillator Associative Memory Array Operation

Operation of the array of coupled oscillators underlying the associative memory function is demonstrated for various interconnection schemes (cross-connect, star phase keying and star frequency keying) and various physical implementation of oscillators (van der Pol, phase-locked loop, spin torque). The speed of synchronization of oscillators and the evolution of the degree of matching is studied as a function of device parameters. The dependence of errors in association on the number of the memorized patterns and the distance between the test and the memorized pattern is determined for Palm, Furber and Hopfield association algorithms.

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preprint2010arXiv

Proposal of a spin torque majority gate logic

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magnetization is examined. Switching encompasses moving domain walls. The device reuses most of the materials and structures from spin torque RAM, and is entirely compatible with CMOS technology.

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preprint2010arXiv

Strategies and tolerances of spin transfer torque switching

Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that switching with perpendicularly polarized current by short pulses and free precession requires smaller time and energy than spin torque switching with collinear in plane spin polarization; it is also found to be superior to other kinds of memories. We study the tolerances of switching to the magnitude of current and pulse duration. An increased Gilbert damping is found to improve tolerances of perpendicular switching without increasing the threshold current, unlike in plane switching.

0 citations0 reviewsNo code linkedOpen access