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Researcher profile

Csaba Andras Moritz

Csaba Andras Moritz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging TechnologiesHardware ArchitectureArtificial IntelligenceDistributed, Parallel, and Cluster ComputingOther Computer Science

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Published work

5 published item(s)

preprint2020arXiv

Hardware-accelerated Simulation-based Inference of Stochastic Epidemiology Models for COVID-19

Epidemiology models are central in understanding and controlling large scale pandemics. Several epidemiology models require simulation-based inference such as Approximate Bayesian Computation (ABC) to fit their parameters to observations. ABC inference is highly amenable to efficient hardware acceleration. In this work, we develop parallel ABC inference of a stochastic epidemiology model for COVID-19. The statistical inference framework is implemented and compared on Intel Xeon CPU, NVIDIA Tesla V100 GPU and the Graphcore Mk1 IPU, and the results are discussed in the context of their computational architectures. Results show that GPUs are 4x and IPUs are 30x faster than Xeon CPUs. Extensive performance analysis indicates that the difference between IPU and GPU can be attributed to higher communication bandwidth, closeness of memory to compute, and higher compute power in the IPU. The proposed framework scales across 16 IPUs, with scaling overhead not exceeding 8% for the experiments performed. We present an example of our framework in practice, performing inference on the epidemiology model across three countries, and giving a brief overview of the results.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Manufacturing Pathway and Experimental Demonstration for Nanoscale Fine-Grained 3-D Integrated Circuit Fabric

At sub-20nm technologies CMOS scaling faces severe challenges primarily due to fundamental device scaling limitations, interconnection overhead and complex manufacturing. Migration to 3D has been long sought as a possible pathway to continue scaling, however, intrinsic requirements of CMOS are not compatible for fine-grained 3D integration. We proposed a truly fine-grained 3D integrated circuit fabric called Skybridge that solves nanoscale challenges and achieves orders of magnitude benefits over CMOS. In Skybridge, device, circuit, connectivity, thermal management and manufacturing issues are addressed in an integrated 3D compatible manner. At the core of Skybridge assembly are uniform vertical nanowires, which are functionalized with architected features for fabric integration. All active components are created primarily using sequential material deposition steps on these nanowires. Lithography and doping are performed prior to any functionalization and their precision requirements are significantly reduced. This paper introduces Skybridge manufacturing pathway that is developed based on extensive process, device simulations and experimental metrology, and uses established processes. Experimental demonstrations of key process steps are also shown.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Metal-Gated Junctionless Nanowire Transistors

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However, with further scaling, JNFETs will suffer from deleterious effects of doped polysilicon such as high resistance, additional capacitance due to gate-oxide interface depletion, and incompatibility with high-k dielectrics[3][4]. In this paper, novel metal- gated high-k JNFETs are investigated through detailed process and device simulations. These MJNFETs are also ideally suited for new types of nano-architectures such as N3ASICs [5] which utilize regular nanowire arrays with limited customization. In such nano- systems, the simplified device geometry in conjunction with a single-type FET circuit style [6] would imply that logic arrays could be patterned out of pre-doped SOI wafers without the need for any additional ion implantation.

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preprint2014arXiv

Nanowire Volatile RAM as an Alternative to SRAM

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage power control are critical issues. To alleviate some of these challenges a novel non-volatile memory alternative to SRAM was proposed called nanowire volatile RAM (NWRAM). Due to NWRAMs regular grid based layout and innovative circuit style, manufacturing complexity is reduced and at the same time considerable benefits are attained in terms of performance and leakage power reduction. In this paper, we elaborate more on NWRAM circuit aspects and manufacturability, and quantify benefits at 16nm technology node through simulation against state-of-the-art 6T-SRAM and gridded 8T-SRAM designs. Our results show the 10T-NWRAM to be 2x faster and 35x better in terms of leakage when compared to high performance gridded 8T-SRAM design.

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preprint2014arXiv

Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, scaling to sub-20nm technologies is proving to be challenging as MOSFETs are reaching their fundamental limits and interconnection bottleneck is dominating IC operational power and performance. Migrating to 3-D, as a way to advance scaling, has eluded us due to inherent customization and manufacturing requirements in CMOS that are incompatible with 3-D organization. Partial attempts with die-die and layer-layer stacking have their own limitations. We propose a 3-D IC fabric technology, Skybridge[TM], which offers paradigm shift in technology scaling as well as design. We co-architect Skybridge's core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template. Our extensive bottom-up simulations, accounting for detailed material system structures, manufacturing process, device, and circuit parasitics, carried through for several designs including a designed microprocessor, reveal a 30-60x density, 3.5x performance per watt benefits, and 10X reduction in interconnect lengths vs. scaled 16-nm CMOS. Fabric-level heat extraction features are shown to successfully manage IC thermal profiles in 3-D. Skybridge can provide continuous scaling of integrated circuits beyond CMOS in the 21st century.

0 citations0 reviewsNo code linkedOpen access