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Mostafizur Rahman

Mostafizur Rahman contributes to research discovery and scholarly infrastructure.

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Published work

13 published item(s)

preprint2026arXiv

Probing beyond-vacuum general relativistic effects with extreme mass-ratio inspirals

We examine extreme mass-ratio inspirals (EMRIs) as probes of beyond-vacuum general relativistic effects, accounting for both astrophysical environments and scalar Gauss-Bonnet (sGB) gravity. In beyond-vacuum scenarios, the evolution of an EMRI immersed in a cold dark matter environment modifies the gravitational wave flux and introduces additional dissipative effects such as dynamical friction. In parallel, in the beyond-general relativistic settings such as in sGB gravity, the inspiraling object carries an effective scalar charge and emits scalar radiation. Both environmental and modified-gravity effects modify the flux-balance law, thereby inducing changes in the EMRI dynamics. Using a two-timescale analysis within the fixed-frequency formalism, we compute leading-order corrections to the energy fluxes for quasi-circular, equatorial orbits in static, spherically symmetric spacetimes and construct the corresponding gravitational waveforms, which are used to quantify the accumulated gravitational wave dephasing and waveform mismatch relative to the vacuum general relativistic case. We further perform the Fisher Information Matrix analysis to estimate parameter correlations and the ability of future space-based detectors such as the Laser Interferometer Space Antenna (LISA) to disentangle environmental and modified gravity effects. Our results show that both dark matter and scalar field effects can leave measurable imprints on EMRI waveforms and that a consistent beyond-vacuum treatment is essential for robust tests of gravity.

preprint2022arXiv

Prospects for determining the nature of the secondaries of extreme mass-ratio inspirals using the spin-induced quadrupole deformation

The measurement of multipole moments of astrophysical objects through gravitational wave (GW) observations provides a novel way to distinguish black holes from other astrophysical objects. This paper studies the gravitational wave radiation from an extreme mass ratio inspiral (EMRI) system consisting of a supermassive Kerr black hole (the primary object) and a spinning stellar-mass compact object (the secondary object). The quadrupolar deformation induced by the spin of the secondary is different for different astrophysical objects. We compute the effect of the quadrupolar deformation on the GW phase and provide an order of magnitude estimate of whether LISA can distinguish different astrophysical objects through GW phase measurement. We find that although LISA can not distinguish between a black hole and a neutron star, it can distinguish black holes from a large variety of highly spinning astrophysical objects like superspinars and highly deformable exotic compact objects like boson stars for EMRI systems with relatively large mass ratio ($q\sim 10^{-4}$). Furthermore, we show that the effect of spin-induced quadrupolar deformation on the GW phase for white dwarf and brown dwarf-EMRI systems can be quite significant even for small values of mass ratio ($q\lesssim 10^{-6}$).

preprint2020arXiv

Crosstalk Noise based Configurable Computing: A New Paradigm for Digital Electronics

The past few decades have seen exponential growth in capabilities of digital electronics primarily due to the ability to scale Integrated Circuits (ICs) to smaller dimensions while attaining power and performance benefits. That scalability is now being challenged due to the lack of scaled transistor performance and also manufacturing complexities [1]-[5]. In addition, the growing cyber threat in fabless manufacturing era poses a new front that modern ICs need to withstand. We present a new noise based computing where the interconnect interference between nanoscale metal lines is intentionally engineered to exhibit programmable Boolean logic behavior. The reliance on just coupling between metal lines and not on transistors for computing, and the programmability are the foundations for better scalability, and security by obscurity. Here, we show experimental evidence of a functioning Crosstalk computing chip at 65nm technology. Our demonstration of computing constructs, gate level configurability and utilization of foundry processes show feasibility. These results in conjunction with our simulation results at 7nm for various benchmarks, which show over 48%, 57%, and 10% density, power and performance respectively, gains over equivalent CMOS in the best case, show potentials. The benefits of Crosstalk circuits and inherent programmable features set it apart and make it a promising prospect for future electronics.

preprint2020arXiv

Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study

Recently, Fang et al. have predicted a high ZT of 1.54 in TaSbRu alloys at 1200 K from first-principles without considering spin-orbit interaction, accurate electronic structure, details of phonon scattering, and energy-dependent holes relaxation time. Here, we report the details of structural stability and thermoelectric performance of Bi-Substituted p-type TaSbRu from first-principles calculations considering theses important parameters. This indirect bandgap semiconductor (Eg=0.8 eV by TB-mBJ+SOC) has highly dispersive and degenerate valence bands, which lead to a maximum power factor, 3.8 mWm-1K-2 at 300K. As Sb-5p has a small contribution to the bandgap formation, the substitution of Bi on the Sb site does not cause significant change to the electronic structure. Although the Seebeck coefficient increases by Bi due to slight changes in the bandgap, electrical conductivity, and hence, the power factor reduces to ~3 mW m-1K-2 at 300K (50% Bi). On the other side, lattice thermal conductivity drops effectively to 5 from 20 W/m K as Bi introduces a significant contribution in the acoustic phonon region and intensify phonon scattering. Thus, ZT value is improved through Bi-substitution, reaching 1.1 (50% Bi) at 1200 K from 0.45 (pure TaSbRu) only. Therefore, the present study suggests how to improve the TE performance of Sb-based half-Heusler compounds and TaSbRu (with 50% Bi) is a promising material for high-temperature applications.

preprint2020arXiv

On the validity of Strong Cosmic Censorship Conjecture in presence of Dirac fields

A well posed theory of nature is expected to determine the future of an observer uniquely from a given set of appropriate initial data. In the context of general relativity, this is ensured by Penrose's strong cosmic censorship conjecture. But in recent years, several examples are found which suggest breakdown of the deterministic nature of the theory in Reissner-Nordstrom-de Sitter black holes under the influence of different fundamental fields. Nevertheless, the situation has been reassuring for the case of astrophysically meaningful Kerr-de Sitter black hole solutions which seems to respect the conjecture. However, the previous analyses were done considering only the effect of scalar fields. In this paper, we extend the study by considering Dirac fields in Kerr-de Sitter background and show that there exist a parameter space which does not respect the conjecture.

preprint2020arXiv

Strong cosmic censorship conjecture with NUT charge and conformal coupling

Strong cosmic censorship conjecture is central to the deterministic nature of general relativity, since it asserts that given any generic initial data on a spacelike hypersurface, the future can be uniquely predicted. However, recently it has been found that for charged black holes in asymptotically de Sitter spacetimes, the metric and massless scalar fields can be extended beyond the Cauchy horizon. This spells doom on the strong cosmic censorship conjecture, which prohibits precisely this scenario. In this work we try to understand the genericness of the above situation by studying the effect of NUT charge and conformally coupled scalar field on the violation of strong cosmic censorship conjecture for charged asymptotically de Sitter black holes. We have shown that even in the presence of the NUT charge and a conformally coupled scalar field strong cosmic censorship conjecture in indeed violated for such black holes with Cauchy horizon. Moreover, the presence of conformal coupling makes the situation even worse, in the sense that the scalar field is extendible across the Cauchy horizon as a $C^{1}$ function. On the other hand, the strong cosmic censorship conjecture is respected for conformally coupled scalar field in rotating black hole spacetimes with NUT charge. This reinforces the belief that possibly for astrophysical black holes, strong cosmic censorship conjecture is respected, irrespective of the nature of the scalar field.

preprint2019arXiv

Astrophysical Signatures of Black holes in Generalized Proca Theories

Explaining the late time acceleration is one of the most challenging tasks for theoretical physicists today. Infra-red modification of Einstein's general theory of relativity (GR) is a possible route to model late time acceleration. In this regard, vector-tensor theory as a part of gravitational interactions on large cosmological scales, has been proposed recently. This involves generalization of massive Proca lagrangian in curved space time. Black hole solutions in such theories have also been constructed. In this paper, we study different astrophysical signatures of such black holes. We first study the strong lensing and time delay effect of such static spherically symmetric black hole solutions, in particular for the case of gravitational lensing of the star S2 by Sagittarius A* at the centre of Milky Way. We also construct the rotating black hole solution from this static spherically symmetric solution in Proca theories using the Newman-Janis algorithm and subsequently study lensing, time delay and black hole shadow effect in this rotating black hole space time. We discuss the possibility of detecting Proca hair in future observations.

preprint2016arXiv

Routability in 3D IC Design: Monolithic 3D vs. Skybridge 3D CMOS

Conventional 2D CMOS technology is reaching fundamental scaling limits, and interconnect bottleneck is dominating integrated circuit (IC) power and performance. While 3D IC technologies using Through Silicon Via or Monolithic Inter-layer Via alleviate some of these challenges, they follow a similar layout and routing mindset as 2D CMOS. This is insufficient to address routing requirements in high-density 3D ICs and even causes severe routing congestion at large-scale designs, limiting their benefits and scalability. Skybridge is a recently proposed fine-grained 3D IC fabric relying on vertical nanowires that presents a paradigm shift for scaling, while addressing associated 3D connectivity and manufacturability challenges. Skybridge&#39;s core fabric components enable a new 3D IC design approach with vertically-composed logic gates, and provide a greater degree of routing flexibility compared to conventional 2D and 3D ICs leading to much larger benefits and future scalability. In this paper, we present a methodology using relevant metrics to evaluate and quantify the benefits of Skybridge vs. state-of-the-art transistor-level monolithic 3D IC (T-MI) and 2D in terms of routability and its impact on large-scale circuits. This is enabled by a new device-to-system design flow with commercial CAD tools that we developed for large-scale Skybridge IC designs in 16nm node. Evaluation for standard benchmark circuits shows that Skybridge yields up to 1.6x lower routing demand against T-MI with no routing congestion (routing demand to resource ratio < 1) at all metal layers. This 3D routability in conjunction with compact vertical gate design in Skybridge translate into benefits of up to 3x lower power and 11x higher density over 2D CMOS, while TLM-3DIC approach only has up to 22% power saving and 2x density improvement over 2D CMOS.

preprint2016arXiv

Skybridge-3D-CMOS: A Vertically-Composed Fine-Grained 3D CMOS Integrated Circuit Technology

Parallel and monolithic 3D integration directions offer pathways to realize 3D integrated circuits (ICs) but still lead to layer-by-layer implementations, each functional layer being composed in 2D first. This mindset causes challenging connectivity, routing and layer alignment between layers when connected in 3D, with a routing access that can be even worse than 2D CMOS, which fundamentally limits their potential. To fully exploit the opportunities in the third dimension, we propose Skybridge-3D-CMOS (S3DC), a fine-grained 3D integration approach that is directly composed in 3D, utilizing the vertical dimension vs. using a layer-by-layer assembly mindset. S3DC uses a novel wafer fabric creation with direct 3D design and connectivity in the vertical dimension. It builds on a uniform vertical nanowire template that is processed as a single wafer; it incorporates specifically architected structures for realizing devices, circuits, and heat management directly in 3D. Novel 3D interconnect concepts, including within the silicon layers, enable significantly improved routing flexibility in all three dimensions and a high-density 3D design paradigm overall. Intrinsic components for fabric-level 3D heat management are introduced. Extensive bottom-up simulations and experiments have been presented to validate the key fabric-enabling concepts. Evaluation results indicate up to 40x density and 10x performance-per-watt benefits against conventional 16-nm CMOS for the circuits studied; benefits are also at least an order of magnitude beyond what was shown to be possible with other 3D directions.

preprint2015arXiv

Manufacturing Pathway and Experimental Demonstration for Nanoscale Fine-Grained 3-D Integrated Circuit Fabric

At sub-20nm technologies CMOS scaling faces severe challenges primarily due to fundamental device scaling limitations, interconnection overhead and complex manufacturing. Migration to 3D has been long sought as a possible pathway to continue scaling, however, intrinsic requirements of CMOS are not compatible for fine-grained 3D integration. We proposed a truly fine-grained 3D integrated circuit fabric called Skybridge that solves nanoscale challenges and achieves orders of magnitude benefits over CMOS. In Skybridge, device, circuit, connectivity, thermal management and manufacturing issues are addressed in an integrated 3D compatible manner. At the core of Skybridge assembly are uniform vertical nanowires, which are functionalized with architected features for fabric integration. All active components are created primarily using sequential material deposition steps on these nanowires. Lithography and doping are performed prior to any functionalization and their precision requirements are significantly reduced. This paper introduces Skybridge manufacturing pathway that is developed based on extensive process, device simulations and experimental metrology, and uses established processes. Experimental demonstrations of key process steps are also shown.

preprint2014arXiv

Metal-Gated Junctionless Nanowire Transistors

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However, with further scaling, JNFETs will suffer from deleterious effects of doped polysilicon such as high resistance, additional capacitance due to gate-oxide interface depletion, and incompatibility with high-k dielectrics[3][4]. In this paper, novel metal- gated high-k JNFETs are investigated through detailed process and device simulations. These MJNFETs are also ideally suited for new types of nano-architectures such as N3ASICs [5] which utilize regular nanowire arrays with limited customization. In such nano- systems, the simplified device geometry in conjunction with a single-type FET circuit style [6] would imply that logic arrays could be patterned out of pre-doped SOI wafers without the need for any additional ion implantation.

preprint2014arXiv

Nanowire Volatile RAM as an Alternative to SRAM

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage power control are critical issues. To alleviate some of these challenges a novel non-volatile memory alternative to SRAM was proposed called nanowire volatile RAM (NWRAM). Due to NWRAMs regular grid based layout and innovative circuit style, manufacturing complexity is reduced and at the same time considerable benefits are attained in terms of performance and leakage power reduction. In this paper, we elaborate more on NWRAM circuit aspects and manufacturability, and quantify benefits at 16nm technology node through simulation against state-of-the-art 6T-SRAM and gridded 8T-SRAM designs. Our results show the 10T-NWRAM to be 2x faster and 35x better in terms of leakage when compared to high performance gridded 8T-SRAM design.

preprint2014arXiv

Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, scaling to sub-20nm technologies is proving to be challenging as MOSFETs are reaching their fundamental limits and interconnection bottleneck is dominating IC operational power and performance. Migrating to 3-D, as a way to advance scaling, has eluded us due to inherent customization and manufacturing requirements in CMOS that are incompatible with 3-D organization. Partial attempts with die-die and layer-layer stacking have their own limitations. We propose a 3-D IC fabric technology, Skybridge[TM], which offers paradigm shift in technology scaling as well as design. We co-architect Skybridge&#39;s core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template. Our extensive bottom-up simulations, accounting for detailed material system structures, manufacturing process, device, and circuit parasitics, carried through for several designs including a designed microprocessor, reveal a 30-60x density, 3.5x performance per watt benefits, and 10X reduction in interconnect lengths vs. scaled 16-nm CMOS. Fabric-level heat extraction features are shown to successfully manage IC thermal profiles in 3-D. Skybridge can provide continuous scaling of integrated circuits beyond CMOS in the 21st century.