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Jiajun Shi

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Published work

5 published item(s)

preprint2026arXiv

OProver: A Unified Framework for Agentic Formal Theorem Proving

Recent progress in formal theorem proving has benefited from large-scale proof generation and verifier-aware training, but agentic proving is rarely integrated into prover training, appearing only at inference time. We present OProver, a unified framework for agentic formal theorem proving in Lean 4, in which failed proof attempts are iteratively revised using retrieved compiler verified proofs and Lean compiler feedback. OProver is trained through continued pretraining followed by iterative post-training: each iteration runs agentic proving, indexes newly verified proofs into OProofs and the retrieval memory, uses repair trajectories as SFT data, and uses unresolved hard cases for RL. OProofs is built from public Lean resources, large-scale proof synthesis, and agentic proving traces, containing 1.77M Lean statements, 6.86M compiler-verified proofs, and serialized trajectories with retrieved context, failed attempts, feedback, and repairs. Across five benchmarks, OProver-32B attains the best Pass@32 on MiniF2F (93.3%), ProverBench (58.2%), and PutnamBench (11.3%), and ranks second on MathOlympiad (22.8%) and ProofNet (33.2%) more top placements than any prior open-weight whole-proof prover.

preprint2016arXiv

Routability in 3D IC Design: Monolithic 3D vs. Skybridge 3D CMOS

Conventional 2D CMOS technology is reaching fundamental scaling limits, and interconnect bottleneck is dominating integrated circuit (IC) power and performance. While 3D IC technologies using Through Silicon Via or Monolithic Inter-layer Via alleviate some of these challenges, they follow a similar layout and routing mindset as 2D CMOS. This is insufficient to address routing requirements in high-density 3D ICs and even causes severe routing congestion at large-scale designs, limiting their benefits and scalability. Skybridge is a recently proposed fine-grained 3D IC fabric relying on vertical nanowires that presents a paradigm shift for scaling, while addressing associated 3D connectivity and manufacturability challenges. Skybridge's core fabric components enable a new 3D IC design approach with vertically-composed logic gates, and provide a greater degree of routing flexibility compared to conventional 2D and 3D ICs leading to much larger benefits and future scalability. In this paper, we present a methodology using relevant metrics to evaluate and quantify the benefits of Skybridge vs. state-of-the-art transistor-level monolithic 3D IC (T-MI) and 2D in terms of routability and its impact on large-scale circuits. This is enabled by a new device-to-system design flow with commercial CAD tools that we developed for large-scale Skybridge IC designs in 16nm node. Evaluation for standard benchmark circuits shows that Skybridge yields up to 1.6x lower routing demand against T-MI with no routing congestion (routing demand to resource ratio < 1) at all metal layers. This 3D routability in conjunction with compact vertical gate design in Skybridge translate into benefits of up to 3x lower power and 11x higher density over 2D CMOS, while TLM-3DIC approach only has up to 22% power saving and 2x density improvement over 2D CMOS.

preprint2016arXiv

Skybridge-3D-CMOS: A Vertically-Composed Fine-Grained 3D CMOS Integrated Circuit Technology

Parallel and monolithic 3D integration directions offer pathways to realize 3D integrated circuits (ICs) but still lead to layer-by-layer implementations, each functional layer being composed in 2D first. This mindset causes challenging connectivity, routing and layer alignment between layers when connected in 3D, with a routing access that can be even worse than 2D CMOS, which fundamentally limits their potential. To fully exploit the opportunities in the third dimension, we propose Skybridge-3D-CMOS (S3DC), a fine-grained 3D integration approach that is directly composed in 3D, utilizing the vertical dimension vs. using a layer-by-layer assembly mindset. S3DC uses a novel wafer fabric creation with direct 3D design and connectivity in the vertical dimension. It builds on a uniform vertical nanowire template that is processed as a single wafer; it incorporates specifically architected structures for realizing devices, circuits, and heat management directly in 3D. Novel 3D interconnect concepts, including within the silicon layers, enable significantly improved routing flexibility in all three dimensions and a high-density 3D design paradigm overall. Intrinsic components for fabric-level 3D heat management are introduced. Extensive bottom-up simulations and experiments have been presented to validate the key fabric-enabling concepts. Evaluation results indicate up to 40x density and 10x performance-per-watt benefits against conventional 16-nm CMOS for the circuits studied; benefits are also at least an order of magnitude beyond what was shown to be possible with other 3D directions.

preprint2015arXiv

Manufacturing Pathway and Experimental Demonstration for Nanoscale Fine-Grained 3-D Integrated Circuit Fabric

At sub-20nm technologies CMOS scaling faces severe challenges primarily due to fundamental device scaling limitations, interconnection overhead and complex manufacturing. Migration to 3D has been long sought as a possible pathway to continue scaling, however, intrinsic requirements of CMOS are not compatible for fine-grained 3D integration. We proposed a truly fine-grained 3D integrated circuit fabric called Skybridge that solves nanoscale challenges and achieves orders of magnitude benefits over CMOS. In Skybridge, device, circuit, connectivity, thermal management and manufacturing issues are addressed in an integrated 3D compatible manner. At the core of Skybridge assembly are uniform vertical nanowires, which are functionalized with architected features for fabric integration. All active components are created primarily using sequential material deposition steps on these nanowires. Lithography and doping are performed prior to any functionalization and their precision requirements are significantly reduced. This paper introduces Skybridge manufacturing pathway that is developed based on extensive process, device simulations and experimental metrology, and uses established processes. Experimental demonstrations of key process steps are also shown.

preprint2014arXiv

Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, scaling to sub-20nm technologies is proving to be challenging as MOSFETs are reaching their fundamental limits and interconnection bottleneck is dominating IC operational power and performance. Migrating to 3-D, as a way to advance scaling, has eluded us due to inherent customization and manufacturing requirements in CMOS that are incompatible with 3-D organization. Partial attempts with die-die and layer-layer stacking have their own limitations. We propose a 3-D IC fabric technology, Skybridge[TM], which offers paradigm shift in technology scaling as well as design. We co-architect Skybridge's core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template. Our extensive bottom-up simulations, accounting for detailed material system structures, manufacturing process, device, and circuit parasitics, carried through for several designs including a designed microprocessor, reveal a 30-60x density, 3.5x performance per watt benefits, and 10X reduction in interconnect lengths vs. scaled 16-nm CMOS. Fabric-level heat extraction features are shown to successfully manage IC thermal profiles in 3-D. Skybridge can provide continuous scaling of integrated circuits beyond CMOS in the 21st century.