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Researcher profile

A. K. Bakarov

A. K. Bakarov contributes to research discovery and scholarly infrastructure.

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Published work

14 published item(s)

preprint2023arXiv

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease in the effective concentration of remote ionized donors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Diffusion of photo-excited holes in viscous electron fluid

The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a hydrodynamic three-component mixture consisted of electrons and photo-generated heavy and light holes. The obtained results are analyzed within the framework of ambipolar diffusion, which reveals characteristics of a viscous flow. Both hole types exhibit similar hydrodynamic characteristics. In such a way the diffusion lengths, ambipolar diffusion coefficient and the effective viscosity of the electron-hole system are determined.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers

The dependences of the transport scattering time τt, quantum lifetime τq, and their ratio τt/τq on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression of scattering by the random potential of remote donors. It is shown that the experimentally observed abrupt increase in τt and τq with an increase in ne above a certain critical value nec is related to a decrease in n*R. It is established that the drop in τt/τq observed for electron densities ne > nec occurs because scattering by the random potential of background impurities in this two-dimensional system with a decrease in n*R limits an increase in τt more considerably than an increase in τq.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Viscous magnetotransport and Gurzhi effect in bilayer electron system

We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas

Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020). Here, we demonstrate electrical control by drift transport in a system with two-subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time present strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along $\left[110\right]$, the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along $\left[1\bar{1}0\right]$, the data shows spin lifetime that was gate-dependent and longer than in the $\left[110\right]$ direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Experimental analysis of the spin-orbit coupling dependence on the drift velocity of a spin packet

Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump-probe configuration. The experimental data exhibited high spin mobility and long spin lifetimes allowing to obtain the spin-orbit fields as a function of the spin velocities. Surprisingly, above moderate electric fields of 0.4V/cm with velocities higher than 2$μ$m/ns, we observed a dependence of both bulk and structure-related spin-orbit interactions on the velocity magnitude. A remarkable feature is the increase of the cubic Dresselhaus term to approximately half of the linear coupling when the velocity is raised to 10$μ$m/ns. In contrast, the Rashba coupling for both subbands decreases to about half of its value in the same range. These results yield new information for the application of drift models in spin-orbit fields and about limitations for the operation of spin transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Manifestations of classical size effect and electronic viscosity in the magnetoresistance of narrow two-dimensional conductors: Theory and experiment

We develop a classical kinetic theory of magnetotransport of 2D electrons in narrow channels with partly diffusive boundary scattering and apply it to description of magnetoresistance measured in the temperature interval 4.2-30 K in long mesoscopic bars fabricated from high-purity GaAs quantum well structures. Both experiment and theory demonstrate a number of characteristic features in the longitudinal and Hall resistances caused by the size effect in two dimensions owing to the high ballisticity of the transport. In addition to the features described previously, we also reveal a change in the slope of the first derivative of magnetoresistance when the cyclotron orbit diameter equals to half of the channel width. These features are suppressed with increasing temperature as a result of the electronic viscosity due to electron-electron interaction. By comparing theory and experiment, we determine the characteristic time of relaxation of angular distribution of electrons caused by electron-electron scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nonlinear AC and DC Conductivities in a Two-Subband n-GaAs/AlAs Heterostructure

The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands (symmetric $S$ and antisymmetric $AS$), separated by the band gap $Δ_{12}=15.5$ meV. It is shown that, in the linear regime at the applied magnetic field $B >3$ T, the system exhibits oscillations corresponding to the integer quantum Hall effect. A quite complicated pattern of such oscillations is well interpreted in terms of transitions between Landau levels related to different subbands. At $B <1$ T, magneto-intersubband resistance oscillations (MISOs) are observed. An increase in the conductivity with the electric current flowing across the sample or in the intensity of the surface acoustic wave (SAW) in the regime of the integer quantum Hall effect is determined by an increase in the electron gas temperature. In the case of intersubband transitions, it is found that nonlinearity cannot be explained by heating. At the same time, the decrease in the AC conductivity with increasing SAW electric field is independent of frequency, but the corresponding behavior does not coincide with that corresponding to the dependence of the DC conductivity on the Hall voltage $E_y$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System

We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relative amplitude (up to 1%) of the transmittance oscillations appears to be small, they represent a significant (>50%) modulation of the absorption coefficient. The analysis of obtained results demonstrates that the low-B decay, magnitude, and polarization dependence of the transmittance oscillations accurately follow the theory describing photon-assisted scattering between distant disorder-broadened Landau levels. The extracted sample parameters reasonably well describe the concurrently measured MIRO. Our results provide an insight into the MIRO polarization immunity problem and pave the way to probe diverse high-frequency transport properties of high-mobility systems using precise transmission measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stokes flow around an obstacle in viscous two-dimensional electron liquid

The electronic analog of the Poiseuille flow is the transport in a narrow channel with disordered edges that scatter electrons in a diffuse way. In the hydrodynamic regime, the resistivity decreases with temperature, referred to as the Gurzhi effect, distinct from conventional Ohmic behaviour. We studied experimentally an electronic analog of the Stokes flow around a disc immersed in a two-dimensional viscous liquid. The circle obstacle results in an additive contribution to resistivity. If specular boundary conditions apply, it is no longer possible to detect Poiseuille type flow and the Gurzhi effect. However, in flow through a channel with a circular obstacle, the resistivity decreases with temperature. By tuning the temperature, we observed the transport signatures of the ballistic and hydrodynamic regimes on the length scale of disc size. Our experimental results confirm theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Non-linear transport phenomena in a two-subband system

We study non-linear transport phenomena in a high-mobility bilayer system with two closely spaced populated electronic subbands in a perpendicular magnetic field. For a moderate direct current excitation, we observe zero-differential-resistance states with a characteristic 1/B periodicity. We investigate, both experimentally and theoretically, the Hall field-induced resistance oscillations which modulate the high-frequency magneto-intersubband oscillations in our system if we increase the current. We also observe and describe the influence of direct current on the magnetoresistance in the presence of microwave irradiation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Microwave zero-resistance states in a bilayer electron system

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermally activated intersubband scattering and oscillating magnetoresistance in quantum wells

Experimental studies of magnetoresistance in high-mobility wide quantum wells reveal oscillations which appear with an increase in temperature to 10 K and whose period is close to that of Shubnikov-de Haas oscillations. The observed phenomenon is identified as magnetointersubband oscillations caused by the scattering of electrons between two occupied subbands and the third subband which becomes occupied as a result of thermal activation. These small-period oscillations are less sensitive to thermal suppression than the largeperiod magnetointersubband oscillations caused by the scattering between the first and the second subbands. Theoretical study, based on consideration of electron scattering near the edge of the third subband, gives a reasonable explanation of our experimental findings.

0 citations0 reviewsNo code linkedOpen access