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G. M. Gusev

G. M. Gusev contributes to research discovery and scholarly infrastructure.

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Published work

13 published item(s)

preprint2024arXiv

Interaction dominated transport in 2D conductors: from degenerate to partially-degenerate regime

In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes and the heavy holes lead to the breakdown of Galilean invariance, resulting in interaction-limited resistivity. Our exploration of the transport properties spans from low temperatures, where both subsystems are fully degenerate, to higher temperatures, where the Dirac holes remain degenerate while the heavy holes follow Boltzmann statistics, creating a partially degenerate regime. Through a developed theory, we successfully predict the behavior of resistivity as $ρ\sim T^2$ and $ρ\sim T^{3}$ for the fully degenerate and partially degenerate regimes, respectively, which is in reasonable agreement with experimental observations. Notably, at elevated temperatures, the interaction-limited resistivity surpasses the resistivity caused by impurity scattering by a factor of 5-6. These findings imply that the investigated system serves as a versatile experimental platform for exploring various interaction-limited transport regimes in two component plasma.

preprint2022arXiv

Diffusion of photo-excited holes in viscous electron fluid

The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a hydrodynamic three-component mixture consisted of electrons and photo-generated heavy and light holes. The obtained results are analyzed within the framework of ambipolar diffusion, which reveals characteristics of a viscous flow. Both hole types exhibit similar hydrodynamic characteristics. In such a way the diffusion lengths, ambipolar diffusion coefficient and the effective viscosity of the electron-hole system are determined.

preprint2022arXiv

Quantum transport of Dirac fermions in HgTe gapless quantum wells

We study transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed, and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesocopic) samples. In micron-sized samples, we observe a magnetic field induced, quantized resistance ($\sim h/2e^{2}$) at Landau filling factor $ν=0$, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge $ν=0$ state and bulk $ν\neq 0$ hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.

preprint2021arXiv

Multiple crossing of Landau levels of two-dimensional fermions in double HgTe quantum wells

The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The presence of several subbands in such systems leads to a rich filling factor diagram in the quantum Hall regime. We have performed magnetotransport measurements of the HgTe-based double quantum wells in both gapless and gapped state and observed numerous crossings between the Landau levels belonging to different subbands. We analyze the Landau level crossing patterns and compare them to the results of theoretical calculations.

preprint2021arXiv

Viscous magnetotransport and Gurzhi effect in bilayer electron system

We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.

preprint2020arXiv

Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas

Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020). Here, we demonstrate electrical control by drift transport in a system with two-subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time present strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along $\left[110\right]$, the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along $\left[1\bar{1}0\right]$, the data shows spin lifetime that was gate-dependent and longer than in the $\left[110\right]$ direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.

preprint2020arXiv

Experimental analysis of the spin-orbit coupling dependence on the drift velocity of a spin packet

Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump-probe configuration. The experimental data exhibited high spin mobility and long spin lifetimes allowing to obtain the spin-orbit fields as a function of the spin velocities. Surprisingly, above moderate electric fields of 0.4V/cm with velocities higher than 2$μ$m/ns, we observed a dependence of both bulk and structure-related spin-orbit interactions on the velocity magnitude. A remarkable feature is the increase of the cubic Dresselhaus term to approximately half of the linear coupling when the velocity is raised to 10$μ$m/ns. In contrast, the Rashba coupling for both subbands decreases to about half of its value in the same range. These results yield new information for the application of drift models in spin-orbit fields and about limitations for the operation of spin transistors.

preprint2020arXiv

Manifestations of classical size effect and electronic viscosity in the magnetoresistance of narrow two-dimensional conductors: Theory and experiment

We develop a classical kinetic theory of magnetotransport of 2D electrons in narrow channels with partly diffusive boundary scattering and apply it to description of magnetoresistance measured in the temperature interval 4.2-30 K in long mesoscopic bars fabricated from high-purity GaAs quantum well structures. Both experiment and theory demonstrate a number of characteristic features in the longitudinal and Hall resistances caused by the size effect in two dimensions owing to the high ballisticity of the transport. In addition to the features described previously, we also reveal a change in the slope of the first derivative of magnetoresistance when the cyclotron orbit diameter equals to half of the channel width. These features are suppressed with increasing temperature as a result of the electronic viscosity due to electron-electron interaction. By comparing theory and experiment, we determine the characteristic time of relaxation of angular distribution of electrons caused by electron-electron scattering.

preprint2020arXiv

Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.

preprint2020arXiv

Stokes flow around an obstacle in viscous two-dimensional electron liquid

The electronic analog of the Poiseuille flow is the transport in a narrow channel with disordered edges that scatter electrons in a diffuse way. In the hydrodynamic regime, the resistivity decreases with temperature, referred to as the Gurzhi effect, distinct from conventional Ohmic behaviour. We studied experimentally an electronic analog of the Stokes flow around a disc immersed in a two-dimensional viscous liquid. The circle obstacle results in an additive contribution to resistivity. If specular boundary conditions apply, it is no longer possible to detect Poiseuille type flow and the Gurzhi effect. However, in flow through a channel with a circular obstacle, the resistivity decreases with temperature. By tuning the temperature, we observed the transport signatures of the ballistic and hydrodynamic regimes on the length scale of disc size. Our experimental results confirm theoretical predictions.

preprint2020arXiv

Two-dimensional topological insulator state in double HgTe quantum well

The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topological insulator phase, depending on parameters of the samples and according to theoretical predictions. Our work establishes the DQWs as a promising platform for realization of multilayer topological insulators.

preprint2010arXiv

Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.

preprint2010arXiv

Microwave zero-resistance states in a bilayer electron system

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.