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Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel magnetic field

We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas.

preprint2005arXivOpen access
A. V. GoranA. A. BykovA. K. BakarovJ. C. Portal
cond-mat.mes-hall
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Open access4 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
Citations: 0Reviews: 0Saves: 0Code: not linkedDataset: not linkedInstitutions: 0

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A. V. GoranA. A. BykovA. K. BakarovJ. C. Portal

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