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J. C. Portal

J. C. Portal appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

15 published item(s)

preprint2013arXiv

The resistance of 2D Topological insulator in the absence of the quantized transport

We report unconventional transport properties of HgTe wells with inverted band structure: the resistance does not show insulating behavior even when it is of the order of $10^2\times h/2e^{2}$. The system is expected to be a two-dimensional topological insulator with a dominant edge state contribution. The results are inconsistent with theoretical models developed within the framework of the helical Luttinger liquid.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system

The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an unconventional behavior, different from the classical N-shaped dependence typical for bipolar systems with electron-hole asymmetry. The quantum features of magnetotransport are explained by means of numerical calculation of the Landau level spectrum based on the Kane Hamiltonian. The origin of the quantum Hall plateau σxy = 0 near the charge neutrality point is attributed to special features of Landau quantization in our system.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Evidence for zero-differential resistance states in electronic bilayers

We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on instability of homogeneous current flow under conditions of negative differential resistivity which leads to formation of current domains in our sample, similar to the case of single-layer systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Microwave-induced Hall resistance in bilayer electron systems

The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic field reversal in the microwave-induced Hall resistance $ΔR_{xy}$ whereas the dissipative resistance $ΔR_{xx}$ obeys even symmetry. Studies of $ΔR_{xy}$ as a function of the microwave electric field and polarization exhibit a strong and non-trivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Non-linear transport phenomena in a two-subband system

We study non-linear transport phenomena in a high-mobility bilayer system with two closely spaced populated electronic subbands in a perpendicular magnetic field. For a moderate direct current excitation, we observe zero-differential-resistance states with a characteristic 1/B periodicity. We investigate, both experimentally and theoretically, the Hall field-induced resistance oscillations which modulate the high-frequency magneto-intersubband oscillations in our system if we increase the current. We also observe and describe the influence of direct current on the magnetoresistance in the presence of microwave irradiation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport in disordered two-dimensional topological insulator

We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements in the absence of the magnetic field and observe large signal due to the edge states. It demonstrates, that the edge states can propagate over long distance 1 mm, and, therefore, there is no difference between local and non local electrical measurements in topological insulator. In the presence of the in-plane magnetic field we find strong decrease of the local resistance and complete suppression of the nonlocal resistance. We attribute this observation to the transition between topological insulator and bulk metal induced by the in-plane magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetic field induced transition in a wide parabolic well superimposed with superlattice

We study a $Al_{x}Ga_{x-1}As$ parabolic quantum wells (PQW) with $GaAs/Al_{x}Ga_{x-1}As$ square superlattice. The magnetotransport in PQW with intentionally disordered short-period superlattice reveals a surprising transition from electrons distribution over whole parabolic well to independent-layer states with unequal density. The transition occurs in the perpendicular magnetic field at Landau filling factor $ν\approx3$ and is signaled by the appearance of the strong and developing fractional quantum Hall (FQH) states and by the enhanced slope of the Hall resistance. We attribute the transition to the possible electron localization in the x-y plane inside the lateral wells, and formation of the FQH states in the central well of the superlattice, driven by electron-electron interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Microwave zero-resistance states in a bilayer electron system

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum Hall effect near the charge neutrality point in two-dimensional electron-hole system

We study the transport properties of $HgTe$-based quantum wells containing simultaneously electrons and holes in magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity $σ_{xy}\approx 0$ and in a minimum of diagonal conductivity $σ_{xx}$ at $ν=ν_p-ν_n=0$, where $ν_n$ and $ν_p$ are the electron and hole Landau filling factors. We suggest that the transport at the CNP point is determined by electron-hole "snake states" propagating along the $ν=0$ lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in random magnetic field with zero mean value.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermally activated intersubband scattering and oscillating magnetoresistance in quantum wells

Experimental studies of magnetoresistance in high-mobility wide quantum wells reveal oscillations which appear with an increase in temperature to 10 K and whose period is close to that of Shubnikov-de Haas oscillations. The observed phenomenon is identified as magnetointersubband oscillations caused by the scattering of electrons between two occupied subbands and the third subband which becomes occupied as a result of thermal activation. These small-period oscillations are less sensitive to thermal suppression than the largeperiod magnetointersubband oscillations caused by the scattering between the first and the second subbands. Theoretical study, based on consideration of electron scattering near the edge of the third subband, gives a reasonable explanation of our experimental findings.

0 citations0 reviewsNo code linkedOpen access
preprint1999arXiv

Proximity effects and Andreev reflection in mesoscopic SNS junction with perfect NS interfaces

Low temperature transport measurements on superconducting film - normal metal wire - superconducting film (SNS) junctions fabricated on the basis of 6 nm thick superconducting polycrystalline PtSi films are reported. The structures with the normal metal wires of two different lengths L=1.5 $μ$m and L=6$μ$m and the same widths W=0.3$μ$m are studied. Zero bias resistance dip related to pair current proximity effect is observed for all junctions whereas the subharmonic energy gap structure originating from phase coherent multiple Andreev reflections have occurs only in the SNS junctions with short wires.

0 citations0 reviewsNo code linkedOpen access
preprint1997arXiv

Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint1997arXiv

Magnetotransport in wide parabolic PbTe quantum wells

The 3D- and 2D- behaviour of wide parabolic PbTe single quantum wells, which consist of PbTe p-n-p-structures, are studied theoretically and experimentally. A simple model combines the 2D- subband levels and the 3D-Landau levels in order to calculate the density of states in a magnetic field perpendicular to the 2D plane. It is shown that at a channel width of about 300nm on can expect to observe 3D- and 2D-behaviour at the same time. Magnetotransport experiments in selectively contacted Hall bar samples are performed at temperatures down to T = 50 mK and at magnetic fields up to B = 17 T.

0 citations0 reviewsNo code linkedOpen access