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Researcher profile

A. A. Bykov

A. A. Bykov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2023arXiv

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease in the effective concentration of remote ionized donors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers

The dependences of the transport scattering time τt, quantum lifetime τq, and their ratio τt/τq on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression of scattering by the random potential of remote donors. It is shown that the experimentally observed abrupt increase in τt and τq with an increase in ne above a certain critical value nec is related to a decrease in n*R. It is established that the drop in τt/τq observed for electron densities ne > nec occurs because scattering by the random potential of background impurities in this two-dimensional system with a decrease in n*R limits an increase in τt more considerably than an increase in τq.

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preprint2021arXiv

Microwave-Induced Magneto-Intersubband Scattering in a Square Lattice of Antidots

The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d = 0.8 micrometer based on a GaAs quantum well with two occupied energy subbands E1 and E2 is investigated. It is shown that, owing to a significant difference between the electron densities in the subbands, commensurability oscillations of the resistance in the investigated antidot lattice are observed only for the first subband. It is found that microwave irradiation under the cyclotron resonance condition results in the formation of resistance oscillations periodic in the inverse magnetic field in the region of the main commensurability peak. It is established that the period of these oscillations corresponds to the period of magneto-intersubband oscillations. The observed effect is explained by the increase in the rate of intersubband scattering caused by the difference between the electron heating in the subbands E1 and E2.

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preprint2020arXiv

Nonlinear AC and DC Conductivities in a Two-Subband n-GaAs/AlAs Heterostructure

The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands (symmetric $S$ and antisymmetric $AS$), separated by the band gap $Δ_{12}=15.5$ meV. It is shown that, in the linear regime at the applied magnetic field $B >3$ T, the system exhibits oscillations corresponding to the integer quantum Hall effect. A quite complicated pattern of such oscillations is well interpreted in terms of transitions between Landau levels related to different subbands. At $B <1$ T, magneto-intersubband resistance oscillations (MISOs) are observed. An increase in the conductivity with the electric current flowing across the sample or in the intensity of the surface acoustic wave (SAW) in the regime of the integer quantum Hall effect is determined by an increase in the electron gas temperature. In the case of intersubband transitions, it is found that nonlinearity cannot be explained by heating. At the same time, the decrease in the AC conductivity with increasing SAW electric field is independent of frequency, but the corresponding behavior does not coincide with that corresponding to the dependence of the DC conductivity on the Hall voltage $E_y$.

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preprint2020arXiv

Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System

We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relative amplitude (up to 1%) of the transmittance oscillations appears to be small, they represent a significant (>50%) modulation of the absorption coefficient. The analysis of obtained results demonstrates that the low-B decay, magnitude, and polarization dependence of the transmittance oscillations accurately follow the theory describing photon-assisted scattering between distant disorder-broadened Landau levels. The extracted sample parameters reasonably well describe the concurrently measured MIRO. Our results provide an insight into the MIRO polarization immunity problem and pave the way to probe diverse high-frequency transport properties of high-mobility systems using precise transmission measurements.

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preprint2012arXiv

Magnetoresistance Relaxation in (La0.5Eu0.5)0.7Pb0.3MnO3 Single Crystals under the Action of a Pulse Magnetic Field

Magnetoresistance of substituted lanthanum manganite (La0.5Eu0.5)0.7Pb0.3MnO3 in the pulse magnetic field H = 25 T was measured at different temperatures. Magnetoresistance relaxation with a characteristic time of 10 -3 s was found. It has been established that the temperature dependence of the relaxation parameter τ(t) at different temperatures correlates with the temperature dependence of electrical resistance R(T). The proposed relaxation mechanism is related to relaxation of conducting and dielectric phases in the sample volume under phase stratification conditions. It is shown that relaxation parameter τ reflects the number of boundaries in the volume and not the ratio between phase fractions.

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preprint2010arXiv

Temperature Dependence of Magnetophonon Resistance Oscillations in GaAs/AlAs Heterostructures at High Filling Factors

The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of phonon-induced oscillations has been found to be governed by quantum relaxation time which is determined by electron-electron interaction effects. This is in agreement with results recently obtained in ultra-high mobility two-dimensional electron system with low electron density [A. T. Hatke et al., Phys. Rev. Lett. 102, 086808 (2009)]. The shift of the main maximum of the magnetophonon resistance oscillations to higher magnetic fields with increasing temperature is observed.

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