Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field

preprint2016arXivOpen access

Abstract

The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy (E1≈E2<<E3E_1\approx E_2<<E_3). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the ithi^{th} and jthj^{th} subbands are observed and obey the relation Δij=Ej−Ei=k⋅ℏωcΔ_{ij}=E_j-E_i=k\cdot\hbarω_c, where ωcω_c is the cyclotron frequency and kk is an integer. An application of in-plane magnetic field produces dramatic changes in MISO and the corresponding electron spectrum. Three regimes are identified. At ℏωc≪Δ12\hbarω_c \ll Δ_{12} the in-plane magnetic field increases considerably the gap Δ12Δ_{12}, which is consistent with the semi-classical regime of electron propagation. In contrast at strong magnetic fields ℏωc≫Δ12\hbarω_c \gg Δ_{12} relatively weak oscillating variations of the electron spectrum with the in-plane magnetic field are observed. At ℏωc≈Δ12\hbarω_c \approx Δ_{12} the electron spectrum undergoes a transition between these two regimes through magnetic breakdown. In this transition regime MISO with odd quantum number kk terminate, while MISO corresponding to even kk evolve continuouslycontinuously into the high field regime corresponding to ℏωc≫Δ12\hbarω_c \gg Δ_{12}

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