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A. H. Castro Neto

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con cond-mat cond-mat.dis-nn cond-mat.stat-mech cond-mat.other physics.comp-ph physics.optics quant-ph

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preprint2020arXiv

Correlated states of a triangular net of coupled quantum wires: Implications for the phase diagram of marginally twisted bilayer graphene

We explore in detail the electronic phases of a system consisting of three non-colinear arrays of coupled quantum wires, each rotated 120 degrees with respect to the next. A perturbative renormalization-group analysis reveals that multiple correlated states can be stabilized: a $s$-wave or $d \pm id$ superconductor, a charge density wave insulator, a two-dimensional Fermi liquid, and a 2D Luttinger liquid (also known as smectic metal or sliding Luttinger liquid). The model provides an effective description of electronic interactions in small-angle twisted bilayer graphene and we discuss its implications in relation to the recent observation of correlated and superconducting groundstates near commensurate densities in magic-angle twisted samples, as well as the ``strange metal'' behavior at finite temperatures as a natural outcome of the 2D Luttinger liquid phase.

preprint2016arXiv

2D materials and van der Waals heterostructures

The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g. absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc). Novel heterostructure devices are also starting to appear - tunneling transistors, resonant tunneling diodes, light emitting diodes, etc. Composed from individual 2D crystals, such devices utilize the properties of those crystals to create functionalities that are not accessible to us in other heterostructures. We review the properties of novel 2D crystals and how their properties are used in new heterostructure devices.

preprint2016arXiv

Edge phonons in black phosphorus

Exfoliated black phosphorus has recently emerged as a new two-dimensional crystal that, due to its peculiar and anisotropic crystalline and electronic band structures, may have potentially important applications in electronics, optoelectronics and photonics. Despite the fact that the edges of layered crystals host a range of singular properties whose characterization and exploitation are of utmost importance for device development, the edges of black phosphorus remain poorly characterized. In this work, the atomic structure and the behavior of phonons near different black phosphorus edges are experimentally and theoretically studied using Raman spectroscopy and density functional theory calculations. Polarized Raman results show the appearance of new modes at the edges of the sample, and their spectra depend on the atomic structure of the edges (zigzag or armchair). Theoretical simulations confirm that the new modes are due to edge phonon states that are forbidden in the bulk, and originated from the lattice termination rearrangements.

preprint2016arXiv

Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures

Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transition metal dichalcogenides (TMDs) found that the exciton decay dynamics is dominated by interlayer charge transfer (CT) processes. Here, we report an experimental observation of fast interlayer energy transfer (ET) in MoSe2/WS2 heterostructures using photoluminescence excitation (PLE) spectroscopy. The temperature dependence of the transfer rates suggests that the ET is Förster-type involving excitons in the WS2 layer resonantly exciting higher-order excitons in the MoSe2 layer. The estimated ET time of the order of 1 ps is among the fastest compared to those reported for other nanostructure hybrid systems such as carbon nanotube bundles. Efficient ET in these systems offers prospects for optical amplification and energy harvesting through intelligent layer engineering.

preprint2016arXiv

Magnetic effects in sulfur-decorated graphene

The interaction between two different materials can present novel phenomena that are quite different from the physical properties observed when each material stands alone. Strong electronic correlations, such as magnetism and superconductivity, can be produced as the result of enhanced Coulomb interactions between electrons. Two-dimensional materials are powerful candidates to search for the novel phenomena because of the easiness of arranging them and modifying their properties accordingly. In this work, we report magnetic effects of graphene, a prototypical non-magnetic two-dimensional semi-metal, in the proximity with sulfur, a diamagnetic insulator. In contrast to the well-defined metallic behaviour of clean graphene, an energy gap develops at the Fermi energy for the graphene/sulfur compound with decreasing temperature. This is accompanied by a steep increase of the resistance, a sign change of the slope in the magneto-resistance between high and low fields, and magnetic hysteresis. A possible origin of the observed electronic and magnetic responses is discussed in terms of the onset of low-temperature magnetic ordering. These results provide intriguing insights on the search for novel quantum phases in graphene-based compounds.

preprint2016arXiv

Multiferroic Two-Dimensional Materials

The relation between unusual Mexican-hat band dispersion, ferromagnetism and ferroelasticity is investigated using a combination of analytical, first-principles and phenomenological methods. The class of material with Mexican-hat band edge is studied using the $α$-SnO monolayer as a prototype. Such band edge causes a van Hove singularity diverging with $\frac{1}{\sqrt{E}}$, and in p-type material leads to spatial and/or time-reversal spontaneous symmetry breaking. We show that an unexpected multiferroic phase is obtained in a range of hole density for which the material presents ferromagnetism and ferroelasticity simultaneously.

preprint2016arXiv

Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers

The excitonic spectra of single layer GeS and GeSe are predicted by ab initio GW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the band structures find a fundamental band gap of 2.85 eV for GeS and 1.70 eV for GeSe monolayer. However, excitons are tightly bound, specially in GeS at the Γ point, where the quasi-particle interactions are so strong that they shift the Γ exciton peak energy into the visible range and below the off-Γ exciton peak. The lowest energy excitons in both materials are excited by light along the zigzag direction and have exciton binding energies of 1.05 eV and 0.4 eV, respectively, but despite the strong binding, the calculated binding energies are in agreement with a Mott-Wannier model.

preprint2016arXiv

Vacancies and oxidation of 2D group-IV monochalcogenides

Point defects in the binary group-IV monochalcogenide monolayers of SnS, SnSe, GeS, GeSe are investigated using density-functional-theory calculations. Several stable configurations are found for oxygen defects, however we give evidence that these materials are less prone to oxidation than phosphorene, with which monochalcogenides are isoelectronic and share the same orthorhombic structure. Concurrent oxygen defects are expected to be vacancies and substitutional oxygen. We show that it is energetically favorable oxygen be incorporated into the layers substituting for a chalcogen (O S/Se defects), and different from most of the other defects investigated, this defect preserves the electronic structure of the material. Thus, we suggest that annealing treatments can be useful for the treatment of functional materials where loss mechanisms due to the presence of defects are undesirable.

preprint2015arXiv

Atomically thin dilute magnetism in Co-doped phosphorene

Two-dimensional dilute magnetic semiconductors can provide fundamental insights in the very nature of magnetic orders and their manipulation through electron and hole doping. Despite the fundamental physics, due to the large charge density control capability in these materials, they can be extremely important in spintronics applications such as spin valve and spin-based transistors. In this article, we studied a two-dimensional dilute magnetic semiconductors consisting of phosphorene monolayer doped with cobalt atoms in substitutional and interstitial defects. We show that these defects can be stabilized and are electrically active. Furthermore, by including holes or electrons by a potential gate, the exchange interaction and magnetic order can be engineered, and may even induce a ferromagnetic-to-antiferromagnetic phase transition in p-doped phosphorene.

preprint2015arXiv

Chiral filtering in graphene with coupled valleys

We analyze the problem of electronic transmission through different regions of a graphene sheet that are characterized by different types of connections between the Dirac points. These valley symmetry breaking Hamiltonians might arise from electronic self-interaction mediated by the dielectric environment of distinct parts of the substrate on which the graphene sheet is placed. We show that it is possible to have situations in which we can use these regions to select or filter states of one desired chirality.

preprint2015arXiv

Enhanced piezoelectricity and modified dielectric screening of 2-D group-IV monochalcogenides

We use first principles calculations to investigate the lattice properties of group-IV monochalcogenides. These include static dielectric permittivity, elastic and piezoelectric tensors. For the monolayer, it is found that the static permittivity, besides acquiring a dependence on the interlayer distance, is comparatively higher than in the 3D system. In contrast, it is found that elastic properties are little changed by the lower dimensionality. Poisson ratio relating in-plane deformations are close to zero, and the existence of a negative Poisson ratio is also predicted for the GeS compound. Finally, the monolayers shows piezoelectricity, with piezoelectric constants higher than that recently predicted to occur in other 2D-systems, as hexagonal BN and transition metal dichalcogenide monolayers.

preprint2015arXiv

Exciton binding energies and luminescence of phosphorene under pressure

The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only the gap between the valence band and conduction band local extrema, but also the effective masses, and in consequence, the exciton anisotropy and binding strength. In this article, we consider from a theoretical point of view how the exciton stability and the resulting luminescence energy evolves under uniaxial strain. We find that the exciton binding energy can be as large as 0.87 eV in vacuum for 5% transverse strain, placing it amongst the highest for 2D materials. Further, the large shift of the luminescence peak and its linear dependence on strain suggest that it can be used to probe directly the strain state of single-layers.

preprint2015arXiv

Generalized spectral method for near-field optical microscopy

Electromagnetic interaction between a sub-wavelength particle (the `probe') and a material surface (the `sample') is studied theoretically. The interaction is shown to be governed by a series of resonances corresponding to surface polariton modes localized near the probe. The resonance parameters depend on the dielectric function and geometry of the probe, as well as the surface reflectivity of the material. Calculation of such resonances is carried out for several types of axisymmetric probes: spherical, spheroidal, and pear-shaped. For spheroids an efficient numerical method is developed, capable of handling cases of large or strongly momentum-dependent surface reflectivity. Application of the method to highly resonant materials such as aluminum oxide (by itself or covered with graphene) reveals a rich structure of multi-peak spectra and nonmonotonic approach curves, i.e., the probe-sample distance dependence. These features also strongly depend on the probe shape and optical constants of the model. For less resonant materials such as silicon oxide, the dependence is weak, so that the spheroidal model is reliable. The calculations are done within the quasistatic approximation with the radiative damping included perturbatively.

preprint2015arXiv

Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS$_2$

Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak anti-localization in highly n-doped monolayer MoS2. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. We find that the spin lifetime is inversely proportional to momentum relaxation time, indicating that spin relaxation occurs via Dyakonov-Perel mechanism.

preprint2015arXiv

Tunable room-temperature ferromagnet using an iron-oxide and graphene oxide nanocomposite

Magnetic materials have found wide application ranging from electronics and memories to medicine. Essential to these advances is the control of the magnetic order. To date, most room-temperature applications have a fixed magnetic moment whose orientation is manipulated for functionality. Here we demonstrate an iron-oxide and graphene oxide nanocomposite based device that acts as a tunable ferromagnet at room temperature. Not only can we tune its transition temperature in a wide range of temperatures around room temperature, but the magnetization can also be tuned from zero to 0.011 A.m$^2$/kg through an initialization process with two readily accessible knobs (magnetic field and electric current), after which the system retains its magnetic properties semi-permanently until the next initialization process. We construct a theoretical model to illustrate that this tunability originates from an indirect exchange interaction mediated by spin-imbalanced electrons inside the nanocomposite.

preprint2015arXiv

Valleytronics in Tin (II) Sulfide

Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional form of this material using a combination of \emph{ab initio} calculation and $\mathbf{k}\cdot\mathbf{p}$ theory. In particular, we address the valley properties and the optical selection rules of 2D SnS. Our study reveals SnS as an extraordinary material for valleytronics, where pairs of equivalent valleys are placed along two perpendicular axes, can be selected exclusively with linear polarized light, and can be separated using non-local electrical measurements.

preprint2014arXiv

Collective modes in anisotropic double layer systems

We study collective modes in anisotropic double layer systems. To this end, we derive a zero-$T$ dynamic polarization function for a conductor with a paraboloidal dispersion. Following this, we demonstrate the dependence of the plasmonic modes on the relative orientation, doping, and system anisotropy.

preprint2014arXiv

Electric field effect in ultrathin black phosphorus

Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm$^2$/Vs and drain current modulation of over 10$^3$. At low temperatures the on-off ratio exceeds 10$^5$ and the device exhibits both electron and hole conduction. Using atomic force microscopy we observe significant surface roughening of thin black phosphorus crystals over the course of 1 hour after exfoliation.

preprint2014arXiv

Electronic transport in graphene-based heterostructures

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis show that these crystals have improved surface roughness (root mean square (rms) value of only ~ 0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (~ 38,000 cm2/Vs at RT), followed by G/MoS2 (~ 10,000 cm2/Vs) and G/GaSe (~ 2,200 cm2/Vs). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

preprint2014arXiv

Excitons in anisotropic 2D semiconducting crystals

The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding energy in phosphorene as a function of the substrate dielectric constant.

preprint2014arXiv

Extrinsic spin Hall effect induced by resonant skew scattering in graphene

We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering problem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities reveals that giant spin Hall currents are within the reach of the current state of the art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging.

preprint2014arXiv

Orbital symmetry fingerprints for magnetic adatoms in graphene

In this paper, we describe the formation of local resonances in graphene in the presence of magnetic adatoms containing localized orbitals of arbitrary symmetry, corresponding to any given angular momentum state. We show that quantum interference effects which are naturally inbuilt in the honeycomb lattice in combination with the specific orbital symmetry of the localized state lead to the formation of fingerprints in differential conductance curves. In the presence of Jahn-Teller distortion effects, which lift the orbital degeneracy of the adatoms, the orbital symmetries can lead to distinctive signatures in the local density of states. We show that those effects allow scanning tunneling probes to characterize adatoms and defects in graphene.

preprint2014arXiv

Oxygen defects in phosphorene

Oxygen, invariably present in a normal working environment, is a fundamental cause of the degradation of phosphorene. Using first-principles calculations, we show that for each oxygen atom adsorbed onto phosphorene there is an energy release of about 2 eV. Although the most stable forms of oxygen are electrically inactive and lead only to minor distortions of the lattice, there are a number of low energy metastable forms which introduce deep donor and/or acceptor levels in the gap. We also propose a possible mechanism for phosphorene oxidation and we suggest that dangling oxygen atoms increase the hydrophilicity of phosphorene due to their ability to establish hydrogen bonds.

preprint2014arXiv

Phosphorene nanoribbons

Edge-induced gap states in finite phosphorene layers are examined using analytical models and density functional theory. The nature of such gap states depends on the direction of the cut. Armchair nanoribbons are insulating, whereas nanoribbons cut in the perpendicular direction (with zigzag and cliff-type edges) are metallic, unless they undergo a reconstruction or distortion with cell doubling, which opens a gap. All stable nanoribbons with unsaturated edges have gap states that can be removed by hydrogen passivation. Armchair nanoribbon edge states decay exponentially with the distance to the edge and can be described by a nearly-free electron model.

preprint2014arXiv

Phosphorene oxides: bandgap engineering of phosphorene by oxidation

We show that oxidation of phosphorene can lead to the formation of a new family of planar (2D) and tubular (1D) oxides and sub-oxides, most of them insulating. This confers to black phosphorus a native oxide that can be used as barrier material and protective layer. Further, the bandgap of phosphorene oxides depends on the oxygen concentration, suggesting that controlled oxidation can be used as a means to engineer the bandgap. For the oxygen saturated composition, P$_2$O$_5$, both the planar and tubular phases have a large bandgap energy of about 8.5eV, and are transparent in the near UV. These two forms of phosphorene oxides are predicted to have the same formation enthalpy as o$^\prime$-P$_2$O$_5$, the most stable of the previously known forms of phosphorus pentoxide.

preprint2014arXiv

Photocarrier relaxation in two-dimensional semiconductors

Two-dimensional (2D) crystals of semiconducting transition metal dichalcogenides (TMD) absorb a large fraction of incident photons in the visible frequencies despite being atomically thin. It has been suggested that the strong absorption is due to the parallel band or "band nesting" effect and corresponding divergence in the joint density of states. Here, we show using photoluminescence excitation spectroscopy that the band nesting in mono- and bilayer MX$_2$ (M = Mo, W and X = S, Se) results in excitation-dependent characteristic relaxation pathways of the photoexcited carriers. Our experimental and simulation results reveal that photoexcited electron-hole pairs in the nesting region spontaneously separate in the $k$-space, relaxing towards immediate band extrema with opposite momentum. These effects imply that the loss of photocarriers due to direct exciton recombination is temporarily suppressed for excitation in resonance with band nesting. Our findings highlight the potential for efficient hot carrier collection using these materials as the absorbers in optoelectronic devices.

preprint2014arXiv

Pseudomagnetic fields in graphene nanobubbles of constrained geometry: A molecular dynamics study

Analysis of the strain-induced pseudomagnetic fields (PMFs) generated in graphene nanobulges under three different substrate scenarios shows that, in addition to the shape, the graphene-substrate interaction can crucially determine the overall distribution and magnitude of strain and those fields, in and outside the bulge. We utilize a combination of classical molecular dynamics, continuum mechanics, and tight-binding electronic structure calculations as an unbiased means of studying pressure-induced deformations and the resulting PMF in graphene nanobubbles of various geometries. The interplay among substrate aperture geometry, lattice orientation, internal gas pressure, and substrate type is analyzed in view of strain-engineered graphene nanostructures capable of confining and/or guiding electrons at low energies. Except in highly anisotropic geometries, the magnitude of the PMF is generally significant only near the boundaries of the aperture and rapidly decays towards the center because under gas pressure at the scales considered here there is considerable bending at the edges and the central region displays nearly isotropic strain. When the deflection lead to sharp bends at the edges, curvature and the tilting of the $p_z$ orbitals cannot be ignored and contributes substantially to the total field. The strong and localized nature of the PMF at the boundaries and its polarity-changing profile can be exploited to trap electrons inside the bubble or of guiding them in channel-like geometries defined by edges. However, we establish that slippage of graphene against the substrate is an important factor in determining the degree of concentration of PMFs in or around the bulge since it can lead to considerable softening of the strain gradients there. The nature of the substrate emerges thus as a decisive factor determining the effectiveness of nanoscale PMFs tailoring in graphene.

preprint2014arXiv

Scattering theory of spin-orbit active adatoms on graphene

The scattering of two-dimensional massless Dirac fermions from local spin-orbit interactions with an origin in dilute concentrations of physisorbed atomic species on graphene is theoretically investigated. The hybridization between graphene and the adatoms' orbitals lifts spin and valley degeneracies of the pristine host material, giving rise to rich spin-orbit coupling mechanisms with features determined by the exact adsorption position on the honeycomb lattice - bridge, hollow or top position - and the adatoms' outer-shell orbital type. Effective graphene-only Hamiltonians are derived from symmetry considerations, while a microscopic tight-binding approach connects effective low-energy couplings and graphene-adatom hybridization parameters. Within the $T$-matrix formalism, a theory for (spin-dependent) scattering events involving graphene's charge carriers, and the spin-orbit active adatoms is developed. Spin currents associated with intravalley and intervalley scattering are found to tend to oppose each other. We establish that under certain conditions, hollow-position adatoms give rise to the spin Hall effect, through skew scattering, while top-position adatoms induce transverse charge currents via trigonal potential scattering. We also identify the critical Fermi energy range where the spin Hall effect is dramatically enhanced, and the associated transverse spin currents can be reversed.

preprint2014arXiv

Tunable optical properties of multilayers black phosphorus thin films

Black phosphorus thin films might offer attractive alternatives to narrow gap compound semiconductors for optoelectronics across mid- to near-infrared frequencies. In this work, we calculate the optical conductivity tensor of multilayer black phosphorus thin films using the Kubo formula within an effective low-energy Hamiltonian. The optical absorption spectra of multilayer black phosphorus are shown to vary sensitively with thickness, doping, and light polarization. In conjunction with experimental spectra obtained from infrared absorption spectroscopy, we also discuss the role of interband coupling and disorder on the observed anisotropic absorption spectra.

preprint2014arXiv

Van der Waals forces and electron-electron interactions in two strained graphene layers

We evaluate the van der Waals (vdW) interaction energy at zero temperature between two undoped strained graphene layers separated by a finite distance. We consider the following three models for the anisotropic case: (a) where one of the two layers is uniaxially strained, (b) the two layers are strained in the same direction, and (c) one of the layers is strained in the perpendicular direction with respect to the other. We find that for all three models and given value of the electron-electron interaction coupling, the vdW interaction energy increases with increasing anisotropy. The effect is most striking for the case when both layers are strained in the same direction where we observe up to an order of magnitude increase in the strained relative to the unstrained case. We also investigate the effect of electron electron interaction renormalization in the region of large separation between the strained graphene layers. We find that the many-body renormalization contributions to the correlation energy are non negligible and the vdW interaction energy decreases as a function of increasing distance between the layers due to renormalization of the Fermi velocity, the anisotropy, and the effective interaction. Our analysis can be useful in designing novel graphene-based vdW heterostructures which, in recent times, has seen an upsurge in research activity.

preprint2013arXiv

An innovative way of etching MoS2: Characterization and mechanistic investigation

We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.

preprint2013arXiv

Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides

We have studied the optical conductivity of two-dimensional (2D) semiconducting transition metal dichalcogenides (STMDC) using ab-initio density functional theory (DFT). We find that this class of materials presents large optical response due to the phenomenon of band nesting. The tendency towards band nesting is enhanced by the presence of van Hove singularities in the band structure of these materials. Given that 2D crystals are atomically thin and naturally transparent, our results show that it is possible to have strong photon-electron interactions even in 2D

preprint2013arXiv

Donor and Acceptor Levels in Semiconducting Transition Metal Dichalcogenides

Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by adsorption on the sulfur layer. Notably, the activation energies of Lithium and Phosphorus, a shallow donor and a shallow acceptor, respectively, are smaller than 0.1 eV. Substitutional halogens are also proposed as alternative donors adequate for different temperature regimes. All dopants proposed result in very little lattice relaxation and, hence, are expected to lead to minor scattering of the charge carriers. Doped MoS$_2$ and WS$_2$ monolayers are extrinsic in a much wider temperature range than 3D semiconductors, making them superior for high temperature electronic and optoelectronic applications.

preprint2013arXiv

Dual origin of defect magnetism in graphene and its reversible switching by molecular doping

A possibility to control magnetic properties by using electric fields is one of the most desirable characteristics for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and offers a hope due to its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that adatoms magnetism in graphene is itinerant and can be controlled by doping, so that magnetic moments can be switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions: one coming from the same itinerant magnetism and the other due to broken bonds. Our work suggests that magnetic response of graphene can be controlled by the field effect, similar to its transport and optical properties, and that spin diffusion length can be significantly enhanced above a certain carrier density.

preprint2013arXiv

Effective contact model for geometry-independent conductance calculations in graphene

A geometry-independent effective model for the contact self-energies is proposed to calculate the quantum conductance of patterned graphene devices using Green's functions. A Corbino disk, being the simplest device where the contacts can not be modeled as semi-infinite ribbons, is chosen to illustrate this approach. This system's symmetry allows an analytical solution against which numerical calculations on the lattice can be benchmarked. The effective model perfectly describes the conductance of Corbino disks at low-to-moderate energies, and is robust against the size of the annular device region, the number of atoms on the edge, external magnetic fields, or electronic disorder. The contact model considered here affords an expedite, flexible, and geometry-agnostic approach easily allows the consideration of device dimensions encompassing several million atoms, and realistic radial dimensions of a few hundreds of nanometers.

preprint2013arXiv

Electronic and plasmonic phenomena at graphene grain boundaries

Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits.

preprint2013arXiv

Excitonic Collapse in Semiconducting Transition Metal Dichalcogenides

Semiconducting transition metal dichalcogenides (STMDC) are two-dimensional (2D) crystals characterized by electron volt size band gaps, spin-orbit coupling (SOC), and d-orbital character of its valence and conduction bands. We show that these materials carry unique exciton quasiparticles (electron-hole bound states) with energy within the gap but which can ``collapse'' in the strong coupling regime by merging into the band structure continuum. The exciton collapse seems to be a generic effect in these 2D crystals.

preprint2013arXiv

Origami-based spintronics in graphene

We show that periodically folded graphene sheets with enhanced spin-orbit interaction due to curvature effects can carry spin polarized currents and have gaps in the electronic spectrum in the presence of weak magnetic fields. Our results indicate that such origami-like structures can be used efficiently in spintronic applications.

preprint2013arXiv

Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2

It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness regime. We investigate the conduction band valley structure in few-layer MX2 by examining the temperature-dependent shift of indirect exciton PL. Hihgly anisotropic thermal expansion of the lattice and corresponding evolution of the band structure result in distinct peak shift for indirect transitions involving the K and Λ (midpoint along Γ-K) valleys. We identify the origin of the indirect emission and concurrently determine the relative energy of these valleys. Our results show that the two valleys compete in energy in few-layer WSe2.

preprint2013arXiv

Plasmonic Hot Spots in Triangular Tapered Graphene Microcrystals

Recently, plasmons in graphene have been observed experimentally using scattering scanning near-field optical microscopy. In this paper, we develop a simplified analytical approach to describe the behavior in triangular samples. Replacing Coulomb interaction by a short-range one reduces the problem to a Helmholtz equation, amenable to analytical treatment. We demonstrate that even with our simplifications, the system still exhibits the key features seen in the experiment.

preprint2013arXiv

Resonant tunneling in graphene pseudomagnetic quantum dots

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.

preprint2013arXiv

Terahertz conductivity of twisted bilayer graphene

Using terahertz time-domain spectroscopy, the real part of optical conductivity [$σ_{1}(ω)$] of twisted bilayer graphene was obtained at different temperatures (10 -- 300 K) in the frequency range 0.3 -- 3 THz. On top of a Drude-like response, we see a strong peak in $σ_{1} (ω)$ at $\sim$2.7 THz. We analyze the overall Drude-like response using a disorder-dependent (unitary scattering) model, then attribute the peak at 2.7 THz to an enhanced density of states at that energy, that is caused by the presence of a van Hove singularity arising from a commensurate twisting of the two graphene layers.

preprint2013arXiv

Thermodynamics of a Potts-like model for a reconstructed zigzag edge in graphene nanoribbons

We construct a three-color Potts-like model for the graphene zigzag edge reconstructed with Stone-Wales carbon rings, in order to study its thermal equilibrium properties. We consider two cases which have different ground-states: the edge with non-passivated dangling carbon bonds and the edge fully passivated with hydrogen. We study the concentration of defects perturbing the ground-state configuration as a function of the temperature. The defect concentration is found to be exponentially dependent on the effective parameters that describe the model at all temperatures. Moreover, we analytically compute the domain size distribution of the defective domains and conclude that it does not have fat-tails. In an appendix, we show how the exchange parameters of the model can be estimated using density functional theory results. Such equilibrium mechanisms place a lower bound on the concentration of defects in zigzag edges, since the formation of such defects is due to non-equilibrium kinetic mechanisms.

preprint2013arXiv

Topological Insulating States in Laterally Patterned Ordinary Semiconductors

We propose that ordinary semiconductors with large spin-orbit coupling (SOC), such as GaAs, can host stable, robust, and {\it tunable} topological states in the presence of quantum confinement and superimposed potentials with hexagonal symmetry. We show that the electronic gaps which support chiral spin edge states can be as large as the electronic bandwidth in the heterostructure miniband. The existing lithographic technology can produce a topological insulator (TI) operating at temperature $10- 100K$. Improvement of lithographic techniques will open way to tunable room temperature TI.

preprint2012arXiv

Confined magneto-optical waves in graphene

The electromagnetic mode spectrum of single-layer graphene subjected to a quantizing magnetic field is computed taking into account intraband and interband contributions to the magneto-optical conductivity. We find that a sequence of weakly decaying quasi-transverse-electric modes, separated by magnetoplasmon polariton modes, emerge due to the quantizing magnetic field. The characteristics of these modes are tuneable, by changing the magnetic field or the Fermi energy.

preprint2012arXiv

Continuum Model of the Twisted Bilayer

The continuum model of the twisted graphene bilayer (Phys. Rev. Lett. 99, 256802, 2007) is extended to include all types of commensurate structures. The essential ingredient of the model, the Fourier components of the spatially modulated hopping amplitudes, can be calculated analytically, for any type of commensurate structures in the low twist angle limit. We show that the Fourier components that could give rise to a gap in the SE-even structures discussed by Mele (Phys. Rev. B 81, 161405 2010) vanish linearly with angle, whereas the amplitudes that saturate to finite values, as $θ\to0$, ensure that all low angle structures share essentially the same physics. We extend our previous calculations beyond the validity of perturbation theory, to discuss the disappearance of Dirac cone structure at angles below 1^{\circ}.

preprint2012arXiv

Electron-Electron Interactions in Graphene: Current Status and Perspectives

We review the problem of electron-electron interactions in graphene. Starting from the screening of long range interactions in these systems, we discuss the existence of an emerging Dirac liquid of Lorentz invariant quasi-particles in the weak coupling regime, and strongly correlated electronic states in the strong coupling regime. We also analyze the analogy and connections between the many-body problem and the Coulomb impurity problem. The problem of the magnetic instability and Kondo effect of impurities and/or adatoms in graphene is also discussed in analogy with classical models of many-body effects in ordinary metals. We show that Lorentz invariance plays a fundamental role and leads to effects that span the whole spectrum, from the ultraviolet to the infrared. The effect of an emerging Lorentz invariance is also discussed in the context of finite size and edge effects as well as mesoscopic physics. We also briefly discuss the effects of strong magnetic fields in single layers and review some of the main aspects of the many-body problem in graphene bilayers. In addition to reviewing the fully understood aspects of the many-body problem in graphene, we show that a plethora of interesting issues remain open, both theoretically and experimentally, and that the field of graphene research is still exciting and vibrant.

preprint2012arXiv

Faraday effect in graphene enclosed in an optical cavity and the equation of motion method for the study of magneto-optical transport in solids

We show that by enclosing graphene in an optical cavity, giant Faraday rotations in the infrared regime are generated and measurable Faraday rotation angles in the visible range become possible. Explicit expressions for the Hall steps of the Faraday rotation angle are given for relevant regimes. In the context of this problem we develop an equation of motion (EOM) method for calculation of the magneto-optical properties of metals and semiconductors. It is shown that properly regularized EOM solutions are fully equivalent to the Kubo formula.

preprint2012arXiv

Local Moment Formation and Kondo Effect in Defective Graphene

We study the local moment formation and the Kondo effect at single-atom vacancies in Graphene. We develop a model accounting for the vacancy reconstruction as well as non-planarity effects induced by strain and/or temperature. Thus, we find that the dangling $σ$ orbital localized at the vacancy is allowed to strongly hybridize with the $π$-band since the scattering with the vacancy turns the hybridization into singular function of the energy ($\sim [|ε| \ln^2 ε/D]^{-1}$, $D\sim$ the bandwidth). This leads to several new types of impurity phases, which control the magnitude of the vacancy magnetic moment and the possibility of Kondo effect depending on the strength of the local Coulomb interactions, the Hund's rule coupling, the doping level, and the degree of particle-symmetry breaking.

preprint2012arXiv

Spin-orbit coupling assisted by flexural phonons in graphene

We analyze the couplings between spins and phonons in graphene. We present a complete analysis of the possible couplings between spins and flexural, out of plane, vibrations. From tight-binding models we obtain analytical and numerical estimates of their strength. We show that dynamical effects, induced by quantum and thermal fluctuations, significantly enhance the spin-orbit gap.

preprint2011arXiv

Correlated magnetic states in domain and grain boundaries in graphene

Ab initio calculations indicate that while the electronic states introduced by grain boundaries in graphene are only partially confined to the defect core, a domain boundary introduces states near the Fermi level that are very strongly confined to the core of the defect, and that display a ferromagnetic ground state. The domain boundary is fully immersed within the graphene matrix, hence this magnetic state is protected from reconstruction effects that have hampered experimental detection in the case of ribbon edge states. Furthermore, our calculations suggest that charge transfer between one-dimensional extended defects and the bulk in graphene is short ranged for both grain and domain boundaries.

preprint2011arXiv

Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.

preprint2011arXiv

Elliot-Yafet mechanism in graphene

The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times acquires a dependence on the carrier density, which is independent of the scattering mechanism and the relation between mobility and carrier concentration. This dependence puts severe restrictions on the origin of the spin relaxation in graphene. The density dependence of the spin relaxation allows us to distinguish between ordinary impurities and defects which modify locally the spin-orbit interaction.

preprint2011arXiv

Hybridization driven quantum critical behavior in weakly-itinerant ferromagnets

We investigate the unusual magnetic properties of nearly-critical, weakly-itinerant ferromagnets with general formula UTX, where T=Rh,Co and X=Ge,Si. As a unique feature about these systems, we show that changes in the V_{df} hybridization control their proximity to a ferromagnetic instability, and determine the evolution of: the ground state magnetization, M_0, the Curie Temperature, T_C, the density of states at the Fermi level, N(E_F), the T^2 resistivity coefficient, A, and the specific heat coefficient, γ. The universal aspect of our findings comes from the dependence on only two parameters: the T_d bandwidth, W_d, and the distance between T_d and U_f band centers, C_{T_d}-C_{U_f}.

preprint2011arXiv

Kondo Quantum Criticality of Magnetic Adatoms in Graphene

We examine the exchange Hamiltonian for magnetic adatoms in graphene with localized inner shell states. On symmetry grounds, we predict the existence of a class of orbitals that lead to a distinct class of quantum critical points in graphene, where the Kondo temperature scales as $T_{K}\propto|J-J_{c}|^{1/3}$ near the critical coupling $J_{c}$, and the local spin is effectively screened by a \emph{super-ohmic} bath. For this class, the RKKY interaction decays spatially with a fast power law $\sim1/R^{7}$. Away from half filling, we show that the exchange coupling in graphene can be controlled across the quantum critical region by gating. We propose that the vicinity of the Kondo quantum critical point can be directly accessed with scanning tunneling probes and gating.

preprint2011arXiv

Magnetic exchange mechanism for electronic gap opening in graphene

We show within a local self-consistent mean-field treatment that a random distribution of magnetic adatoms can open a robust gap in the electronic spectrum of graphene. The electronic gap results from the interplay between the nature of the graphene sublattice structure and the exchange interaction between adatoms.The size of the gap depends on the strength of the exchange interaction between carriers and localized spins and can be controlled by both temperature and external magnetic field. Furthermore, we show that an external magnetic field creates an imbalance of spin-up and spin-down carriers at the Fermi level, making doped graphene suitable for spin injection and other spintronic applications.

preprint2011arXiv

Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene

The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band transitions by Pauli blocking and induced absorption from the intra-band transitions of the carriers. The latter dominates at low electronic temperature, but, despite an increase in Drude scattering rate, is overwhelmed by the former at high electronic temperature. The time-evolution of the optical conductivity in all regimes can described in terms of a time-varying electronic temperature.

preprint2011arXiv

Pinning of a two-dimensional membrane on top of a patterned substrate: the case of graphene

We study the pinning of a two-dimensional membrane to a patterned substrate within elastic theory both in the bending rigidity and in the strain dominated regimes. We find that both the in-plane strains and the bending rigidity can lead to depinning. We show from energetic arguments that the system experiences a first order phase transition between the attached configuration to a partially detached one when the relevant parameters of the substrate are varied, and we construct a qualitative phase diagram. Our results are confirmed through analytical solutions for some simple geometries of the substrate's profile.

preprint2011arXiv

Quenching of the quantum Hall effect in graphene with scrolled edges

Edge nanoscrolls are shown to strongly influence transport properties of suspended graphene in the quantum Hall regime. The relatively long arc length of the scrolls in combination with their compact transverse size results in formation of many nonchiral transport channels in the scrolls. They short-circuit the bulk current paths and inhibit the observation of the quantized two-terminal resistance. Unlike competing theoretical proposals, this mechanism of disrupting the Hall quantization in suspended graphene is not caused by ill-chosen placement of the contacts, singular elastic strains, or a small sample size.

preprint2011arXiv

Silicon Layer Intercalation of Centimeter-Scale, Epitaxially-Grown Monolayer Graphene on Ru(0001)

We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.

preprint2011arXiv

Topologically Protected Zero Modes in Twisted Bilayer Graphene

We show that the twisted graphene bilayer can reveal unusual topological properties at low energies, as a consequence of a Dirac-point splitting. These features rely on a symmetry analysis of the electron hopping between the two layers of graphene and we derive a simplified effective low-energy Hamiltonian which captures the essential topological properties of twisted bilayer graphene. The corresponding Landau levels peculiarly reveal a degenerate zero-energy mode which cannot be lifted by strong magnetic fields.

preprint2011arXiv

Transport properties of graphene with one-dimensional charge defects

We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these materials.

preprint2011arXiv

Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers

We show that a coherent picture of the dc conductivity of monolayer and bilayer graphene at finite electronic densities emerges upon considering that strong short-range potentials are the main source of scattering in these two systems. The origin of the strong short-range potentials may lie in adsorbed hydrocarbons at the surface of graphene. The equivalence among results based on the partial-wave description of scattering, the Lippmann-Schwinger equation, and the T-matrix approach is established. Scattering due to resonant impurities close to the neutrality point is investigated via a numerical computation of the Kubo formula using a kernel polynomial method. We find that relevant adsorbate species originate impurity bands in monolayer and bilayer graphene close to the Dirac point. In the midgap region, a plateau of minimum conductivity of about $e^2/h$ (per layer) is induced by the resonant disorder. In bilayer graphene, a large adsorbate concentration can develop an energy gap between midgap and high-energy states. As a consequence, the conductivity plateau is supressed near the edges and a "conductivity gap" takes place. Finally, a scattering formalism for electrons in biased bilayer graphene, taking into account the degeneracy of the spectrum, is developed and the dc conductivity of that system is studied.

preprint2010arXiv

Bilayer graphene: gap tunability and edge properties

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy -- the Fermi level of the undoped system -- has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.

preprint2010arXiv

Effect of external conditions on the structure of scrolled graphene edges

Characteristic dimensions of carbon nanoscrolls - "buckyrolls" - are calculated by analyzing the competition between elastic, van der Waals, and electrostatic energies for representative models of suspended and substrate-deposited graphene samples. The results are consistent with both atomistic simulations and experimental observations of scrolled graphene edges. Electrostatic control of the wrapping is shown to be practically feasible and its possible device applications are indicated.

preprint2010arXiv

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$.

preprint2010arXiv

Excitonic effects in the optical conductivity of gated graphene

We study the effect of electron-electron interactions in the optical conductivity of graphene under applied bias and derive a generalization of Elliot's formula, commonly used for semiconductors, for the optical intensity. We show that {\it excitonic resonances} are responsible for several features of the experimentally measured mid-infrared response of graphene such as the increase of the conductivity beyond the "universal" value above the Fermi blocked regime, the broadening of the absorption at the threshold, and the decrease of the optical conductivity at higher frequencies. Our results are also in agreement with {\it ab initio} calculations in the neutral regime.

preprint2010arXiv

Geometry, mechanics and electronics of singular structures and wrinkles in graphene

As the thinnest atomic membrane, graphene presents an opportunity to combine geometry, elasticity and electronics at the limits of their validity. The availability of reliable atomistic potentials for graphene allows unprecedented precise simulations of the mechanical response of atomic membranes. Here we describe the transport and electronic structure in the neighbourhood of conical singularities, the elementary excitations of the ubiquitous wrinkled and crumpled graphene that occur in non-epitaxial suspended samples where shear stresses are unavoidable. We use a combination of atomistic mechanical simulations, analytical geometry and transport calculations in curved graphene, and exact diagonalization of the electronic spectrum to calculate the effects of geometry on electronic structure, transport and mobility in suspended samples. We also point out how the geometry-generated pseudo-magnetic/electric fields might disrupt Landau quantization under a magnetic field.

preprint2010arXiv

Optical Properties of Strained Graphene

The optical conductivity of graphene strained uniaxially is studied within the Kubo-Greenwood formalism. Focusing on inter-band absorption, we analyze and quantify the breakdown of universal transparency in the visible region of the spectrum, and analytically characterize the transparency as a function of strain and polarization. Measuring transmittance as a function of incident polarization directly reflects the magnitude and direction of strain. Moreover, direction-dependent selection rules permit identification of the lattice orientation by monitoring the van-Hove transitions. These photoelastic effects in graphene can be explored towards atomically thin, broadband optical elements.

preprint2010arXiv

Reply to Comment on "Quantum phase transition in the four-spin exchange antiferromagnet"

We argue that our analysis of the J-Q model, presented in Phys. Rev. B 80, 174403 (2009), and based on a field-theory description of coupled dimers, captures properly the strong quantum fluctuations tendencies, and the objections outlined by L. Isaev, G. Ortiz, and J. Dukelsky, arXiv:1003.5205, are misplaced.

preprint2009arXiv

1/N Expansion in Correlated Graphene

We examine the 1/N expansion, where N is the number of two-component Dirac fermions, for Coulomb interactions in graphene with a gap of magnitude $Δ= 2 m$. We find that for $Nα\gg1$, where $α$ is graphene's "fine structure constant", there is a crossover as a function of distance $r$ from the usual 3D Coulomb law, $V(r) \sim 1/r$, to a 2D Coulomb interaction, $V(r) \sim \ln(Nα/mr)$, for $m^{-1} \ll r \ll m^{-1} N α/6$. This effect reflects the weak "confinement" of the electric field in the graphene plane. The crossover also leads to unusual renormalization of the quasiparticle velocity and gap at low momenta. We also discuss the differences between the interaction potential in gapped graphene and usual QED for different coupling regimes.

preprint2009arXiv

Impurity induced spin-orbit coupling in graphene

We study the effect of impurities in inducing spin-orbit coupling in graphene. We show that the sp3 distortion induced by an impurity can lead to a large increase in the spin-orbit coupling with a value comparable to the one found in diamond and other zinc-blende semiconductors. The spin-flip scattering produced by the impurity leads to spin scattering lengths of the order found in recent experiments. Our results indicate that the spin-orbit coupling can be controlled via the impurity coverage.

preprint2009arXiv

Observation of the Kohn anomaly near the K point of bilayer graphene

The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the Raman features. A softening of the phonon branches was observed near the K point, and results evidence the Kohn anomaly and the importance of considering electron-phonon and electron-electron interactions to correctly describe the phonon dispersion in graphene systems.

preprint2009arXiv

Observation of Van Hove singularities in twisted graphene layers

Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this condition is difficult to control. In the case of single-layer graphene, the singularity is too far from the Fermi energy and hence difficult to reach with standard doping and gating techniques. Here we report the observation of low-energy Van Hove singularities in twisted graphene layers seen as two pronounced peaks in the density of states measured by scanning tunneling spectroscopy. We demonstrate that a rotation between stacked graphene layers can generate Van Hove singularities, which can be brought arbitrarily close to the Fermi energy by varying the angle of rotation. This opens intriguing prospects for Van Hove singularity engineering of electronic phases.

preprint2007arXiv

Dissipation in graphene and nanotube resonators

Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment losses, and thermoelastic losses. We find that, for realistic structures and contrary to semiconductor resonators, dissipation is dominated by ohmic losses in the graphene layer and metallic gate. An extension of this study to carbon nanotube-based resonators is presented.

preprint2007arXiv

Fermi Liquid Theory of a Fermi Ring

We study the effect of electron-electron interactions in the electronic properties of a biased graphene bilayer. This system is a semiconductor with conduction and valence bands characterized by an unusual ``mexican-hat'' dispersion. We focus on the metallic regime where the chemical potential lies in the ``mexican-hat'' in the conduction band, leading to a topologically non-trivial Fermi surface in the shape of a ring. We show that due to the unusual topology of the Fermi surface electron-electron interactions are greatly enhanced. We discuss the possibility of an instability towards a ferromagnetic phase due to this enhancement. We compute the electronic polarization function in the random phase approximation and show that, while at low energies the system behaves as a Fermi liquid (albeit with peculiar Friedel oscillations), at high frequencies it shows a highly anomalous response when compare to ordinary metals.

preprint2007arXiv

Graphene bilayer with a twist: electronic structure

Electronic properties of bilayer and multilayer graphene have generally been interpreted in terms of AB or Bernal stacking. However, it is known that many types of stacking defects can occur in natural and synthetic graphite; rotation of the top layer is often seen in scanning tunneling microscopy (STM) studies of graphite. In this paper we consider a graphene bilayer with a relative small angle rotation between the layers and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in a AB stacked bilayer and in accord with observations in epitaxial graphene we find: (a) the low energy dispersion is linear, as in a single layer, but the Fermi velocity can be significantly smaller than the single layer value; (b) an external electric field, perpendicular to the layers, does not open an electronic gap

preprint2007arXiv

Impurities in a Biased Graphene Bilayer

We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field effect. Moreover, the band gap is renormalized and impurity bands are created at finite impurity concentrations. Using the coherent potential approximation we calculate the electronic density of states and its dependence on the applied bias voltage.

preprint2007arXiv

Negative Hopping Magnetoresistance and Dimensional Crossover in Lightly Doped Cuprate Superconductors

We show that, due to the weak ferromagnetism of La$_{2-x}$Sr$_x$CuO$_4$, an external magnetic field leads to a dimensional crossover 2D $\to$ 3D for the in-plane transport. The crossover results in an increase of the hole's localization length and hence in a dramatic negative magnetoresistance in the variable range hopping regime. This mechanism quantitatively explains puzzling experimental data on the negative magnetoresistance in the Néel phase of La$_{2-x}$Sr$_x$CuO$_4$.

preprint2007arXiv

Phase-locking transition of coupled low-dimensional superfluids

We study the phase-locking transition of two coupled low-dimensional superfluids, either two-dimensional superfluids at finite temperature, or one-dimensional superfluids at zero temperature. We find that the superfluids have a strong tendency to phase-lock. The phase-locking is accompanied by a sizeable increase of the transition temperature $T_{c}$ (in 2D systems) of the resulting double-layer superfluid to thermal Bose gas transition, compared to the Kosterlitz-Thouless temperature $T_{KT}$ of the uncoupled 2D systems, which suggests a plausible way of observing the Kibble-Zurek mechanism in two-dimensional cold atom systems by rapidly varying the tunneling rate between the superfluids. If there is also interaction between atoms in different layers present we find additional phases, while no sliding phase, characterized by order or quasi long range order (QLRO) either in the symmetric or the antisymmetric sector of the system.

preprint2007arXiv

Superconducting states of pure and doped graphene

We study the superconducting phases of the two-dimensional honeycomb lattice of graphene. We find two spin singlet pairing states, s-wave and an exotic $p+ip$ that is possible because of the special structure of the honeycomb lattice. At half filling, the $p+ip$ phase is gapless and superconductivity is a hidden order. We discuss the possibility of a superconducting state in metal coated graphene.

preprint2006arXiv

Electron-Phonon Coupling and Raman Spectroscopy in Graphene

We show that the electron-phonon coupling in graphene, in contrast with the non-relativistic two-dimensional electron gas, leads to shifts in the phonon frequencies that are non-trivial functions of the electronic density. These shifts can be measured directly in Raman spectroscopy. We show that depending whether the chemical potential is smaller (larger) than half of the phonon frequency, the frequency shift can negative (positive) relative to the neutral case (when the chemical potential is at the Dirac point), respectively. We show that the use of the static response function to calculate these shifts is incorrect and leads always to phonon softening. In samples with many layers, we find a shift proportional to the carrier concentration, and a splitting of the phonon frequencies if the charge is not homogeneously distributed. We also discuss the effects of edges in the problem.

preprint2006arXiv

Electronic properties of graphene multilayers

We study the effects of disorder in the electronic properties of graphene multilayers, with special focus on the bilayer and the infinite stack. At low energies and long wavelengths, the electronic self-energies and density of states exhibit behavior with divergences near half-filling. As a consequence, the spectral functions and conductivities do not follow Landau's Fermi liquid theory. In particular, we show that the quasiparticle decay rate has a minimum as a function of energy, there is a universal minimum value for the in-plane conductivity of order e^2/h per plane and, unexpectedly, the c-axis conductivity is enhanced by disorder at low doping, leading to an enormous conductivity anisotropy at low temperatures.

preprint2005arXiv

Fixed Points of the Dissipative Hofstadter Model

The phase diagram of a dissipative particle in a periodic potential and a magnetic field is studied in the weak barrier limit and in the tight-biding regime. For the case of half flux per plaquette, and for a wide range of values of the dissipation, the physics of the model is determined by a non trivial fixed point. A combination of exact and variational results is used to characterize this fixed point. Finally, it is also argued that there is an intermediate energy scale that separates the weak coupling physics from the tight-binding solution.

preprint2005arXiv

Reply to Millis et al. on "A Tale of Two Theories: Quantum Griffiths Effects in Metallic Systems"

In a recent paper (cond-mat/0411197) we showed the equivalence of two seemingly contradictory theories on Griffiths-McCoy singularities (GMS) in metallic antiferromagnets close to a quantum critical point (QCP). In a recent comment, Millis {\it et al.} (cond-mat/0411738) argue that in heavy-fermion materials the electronic damping is large leading to the freezing of locally magnetically ordered droplets at high temperatures. In this reply we show that this erroneous conclusion is based on a treatment of the problem of disorder close to a QCP which is not self-consistent. We argue that a self-consistent treatment of the ordered droplets must lead to weak damping and to a large region of GMS behavior, in agreement with the our ealier results.

preprint1998arXiv

Effect of planar impurities on the superfluid density of striped cuprates

We propose a mechanism for superconductivity suppression in stripe-correlated cuprates based on the pinning of the stripes by impurities, such as Zn. The suppression of superfluid density occurs in the vicinity of the impurity due to the low dimensional character of superfluid carriers on the stripes. Simple geometric argument about the planar fraction of the carriers, affected by stripe pinning, leads to prediction for impurity critical concentration $z_c \sim T^2_c$ and for the linear $T_c$ suppression by Zn doping. We show that our results reproduce the Uemura relation in the pure system and we predict the behavior of the superfluidy density as a function of Zn concentration. We compare our results with available data.

preprint1998arXiv

Evidence for a common physical description of non-Fermi-liquid behavior in f-electron systems

The non-Fermi-liquid (NFL) behavior observed in the low temperature specific heat $C(T)$ and magnetic susceptibility $χ(T)$ of f-electron systems is analyzed within the context of a recently developed theory based on Griffiths singularities. Measurements of $C(T)$ and $χ(T)$ in the systems $Th_{1-x}U_{x}Pd_{2}Al_{3}$, $Y_{1-x}U_{x}Pd_3$, and $UCu_{5-x}M_{x}$ (M = Pd, Pt) are found to be consistent with $C(T)/T \propto χ(T) \propto T^{-1+λ}$ predicted by this model with $λ<1$ in the NFL regime. These results suggest that the NFL properties observed in a wide variety of f-electron systems can be described within the context of a common physical picture.

preprint1997arXiv

Theory of Spin Fluctuations in Striped Phases of Doped Antiferromagnetic Cuprates

We study the properties of generalized striped phases of doped cuprate planar quantum antiferromagnets. We invoke an effective, spatially anisotropic, non-linear sigma model in two space dimensions. Our theoretical predictions are in quantitative agreement with recent experiments in La_{2-x}Sr_xCuO_4 with $0 \leq x \leq 0.018$. We focus on (i) the magnetic correlation length, (ii) the staggered magnetization at $T=0$ and (iii) the Néel temperature, as functions of doping, using parameters determined previously and independently for this system. These results support the proposal that the low doping (antiferromagnetic) phase of the cuprates has a striped configuration.

preprint1995arXiv

Motion of heavy particles coupled to fermionic and bosonic environments in one dimension

Making use of a simple unitary transformation we change the hamiltonian of a particle coupled to an one dimensional gas of bosons or fermions to a new form from which the many body degrees of freedom can be easily traced out. The effective dynamics of the particle allows us to compute its damping constant in terms of the reflection coefficient of the interaction potential and the occupation number of the environmental particles. We apply our results to a delta repulsive potential.

preprint1995arXiv

On a class of integrable interacting electronic systems with off-diagonal disorder

We report a class of {\it integrable} one-dimensional interacting electronic sy$ with {\it off-diagonal disorder}. For these systems, the disorder can be ``gauged away,''and the spectrum can be mapped completely onto the spectrum of the ordered problem, which can be solved by Bethe ansatz or by bosonization. We study the magnetic properties of the persistent currents in mesoscopic rings in the case in which the ordered system is a Luttinger liquid. The system can be paramagnetic or diamagnetic, depending on the amount of the disorder and the number of fermions in the system.

A. H. Castro Neto

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90 published item(s)

Correlated states of a triangular net of coupled quantum wires: Implications for the phase diagram of marginally twisted bilayer graphene

2D materials and van der Waals heterostructures

Edge phonons in black phosphorus

Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures

Magnetic effects in sulfur-decorated graphene

Multiferroic Two-Dimensional Materials

Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers

Vacancies and oxidation of 2D group-IV monochalcogenides

Atomically thin dilute magnetism in Co-doped phosphorene

Chiral filtering in graphene with coupled valleys

Enhanced piezoelectricity and modified dielectric screening of 2-D group-IV monochalcogenides

Exciton binding energies and luminescence of phosphorene under pressure

Generalized spectral method for near-field optical microscopy

Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS$_2$

Tunable room-temperature ferromagnet using an iron-oxide and graphene oxide nanocomposite

Valleytronics in Tin (II) Sulfide

Collective modes in anisotropic double layer systems

Electric field effect in ultrathin black phosphorus

Electronic transport in graphene-based heterostructures

Excitons in anisotropic 2D semiconducting crystals

Extrinsic spin Hall effect induced by resonant skew scattering in graphene

Orbital symmetry fingerprints for magnetic adatoms in graphene

Oxygen defects in phosphorene

Phosphorene nanoribbons

Phosphorene oxides: bandgap engineering of phosphorene by oxidation

Photocarrier relaxation in two-dimensional semiconductors

Pseudomagnetic fields in graphene nanobubbles of constrained geometry: A molecular dynamics study

Scattering theory of spin-orbit active adatoms on graphene

Tunable optical properties of multilayers black phosphorus thin films

Van der Waals forces and electron-electron interactions in two strained graphene layers

An innovative way of etching MoS2: Characterization and mechanistic investigation

Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides

Donor and Acceptor Levels in Semiconducting Transition Metal Dichalcogenides

Dual origin of defect magnetism in graphene and its reversible switching by molecular doping

Effective contact model for geometry-independent conductance calculations in graphene

Electronic and plasmonic phenomena at graphene grain boundaries

Excitonic Collapse in Semiconducting Transition Metal Dichalcogenides

Origami-based spintronics in graphene

Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2

Plasmonic Hot Spots in Triangular Tapered Graphene Microcrystals

Resonant tunneling in graphene pseudomagnetic quantum dots

Terahertz conductivity of twisted bilayer graphene

Thermodynamics of a Potts-like model for a reconstructed zigzag edge in graphene nanoribbons

Topological Insulating States in Laterally Patterned Ordinary Semiconductors

Confined magneto-optical waves in graphene

Continuum Model of the Twisted Bilayer

Electron-Electron Interactions in Graphene: Current Status and Perspectives

Faraday effect in graphene enclosed in an optical cavity and the equation of motion method for the study of magneto-optical transport in solids

Local Moment Formation and Kondo Effect in Defective Graphene

Spin-orbit coupling assisted by flexural phonons in graphene

Correlated magnetic states in domain and grain boundaries in graphene

Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

Elliot-Yafet mechanism in graphene

Hybridization driven quantum critical behavior in weakly-itinerant ferromagnets

Kondo Quantum Criticality of Magnetic Adatoms in Graphene

Magnetic exchange mechanism for electronic gap opening in graphene

Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene

Pinning of a two-dimensional membrane on top of a patterned substrate: the case of graphene

Quenching of the quantum Hall effect in graphene with scrolled edges

Silicon Layer Intercalation of Centimeter-Scale, Epitaxially-Grown Monolayer Graphene on Ru(0001)

Topologically Protected Zero Modes in Twisted Bilayer Graphene

Transport properties of graphene with one-dimensional charge defects

Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers

Bilayer graphene: gap tunability and edge properties

Effect of external conditions on the structure of scrolled graphene edges

Electronic properties of a biased graphene bilayer

Excitonic effects in the optical conductivity of gated graphene

Geometry, mechanics and electronics of singular structures and wrinkles in graphene

Optical Properties of Strained Graphene

Reply to Comment on "Quantum phase transition in the four-spin exchange antiferromagnet"

1/N Expansion in Correlated Graphene

Impurity induced spin-orbit coupling in graphene

Observation of the Kohn anomaly near the K point of bilayer graphene

Observation of Van Hove singularities in twisted graphene layers