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Researcher profile

A. H. Castro Neto

A. H. Castro Neto contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.supr-con

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Published work

19 published item(s)

preprint2020arXiv

Correlated states of a triangular net of coupled quantum wires: Implications for the phase diagram of marginally twisted bilayer graphene

We explore in detail the electronic phases of a system consisting of three non-colinear arrays of coupled quantum wires, each rotated 120 degrees with respect to the next. A perturbative renormalization-group analysis reveals that multiple correlated states can be stabilized: a $s$-wave or $d \pm id$ superconductor, a charge density wave insulator, a two-dimensional Fermi liquid, and a 2D Luttinger liquid (also known as smectic metal or sliding Luttinger liquid). The model provides an effective description of electronic interactions in small-angle twisted bilayer graphene and we discuss its implications in relation to the recent observation of correlated and superconducting groundstates near commensurate densities in magic-angle twisted samples, as well as the ``strange metal'' behavior at finite temperatures as a natural outcome of the 2D Luttinger liquid phase.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Confined magneto-optical waves in graphene

The electromagnetic mode spectrum of single-layer graphene subjected to a quantizing magnetic field is computed taking into account intraband and interband contributions to the magneto-optical conductivity. We find that a sequence of weakly decaying quasi-transverse-electric modes, separated by magnetoplasmon polariton modes, emerge due to the quantizing magnetic field. The characteristics of these modes are tuneable, by changing the magnetic field or the Fermi energy.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Faraday effect in graphene enclosed in an optical cavity and the equation of motion method for the study of magneto-optical transport in solids

We show that by enclosing graphene in an optical cavity, giant Faraday rotations in the infrared regime are generated and measurable Faraday rotation angles in the visible range become possible. Explicit expressions for the Hall steps of the Faraday rotation angle are given for relevant regimes. In the context of this problem we develop an equation of motion (EOM) method for calculation of the magneto-optical properties of metals and semiconductors. It is shown that properly regularized EOM solutions are fully equivalent to the Kubo formula.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Kondo Quantum Criticality of Magnetic Adatoms in Graphene

We examine the exchange Hamiltonian for magnetic adatoms in graphene with localized inner shell states. On symmetry grounds, we predict the existence of a class of orbitals that lead to a distinct class of quantum critical points in graphene, where the Kondo temperature scales as $T_{K}\propto|J-J_{c}|^{1/3}$ near the critical coupling $J_{c}$, and the local spin is effectively screened by a \emph{super-ohmic} bath. For this class, the RKKY interaction decays spatially with a fast power law $\sim1/R^{7}$. Away from half filling, we show that the exchange coupling in graphene can be controlled across the quantum critical region by gating. We propose that the vicinity of the Kondo quantum critical point can be directly accessed with scanning tunneling probes and gating.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Pinning of a two-dimensional membrane on top of a patterned substrate: the case of graphene

We study the pinning of a two-dimensional membrane to a patterned substrate within elastic theory both in the bending rigidity and in the strain dominated regimes. We find that both the in-plane strains and the bending rigidity can lead to depinning. We show from energetic arguments that the system experiences a first order phase transition between the attached configuration to a partially detached one when the relevant parameters of the substrate are varied, and we construct a qualitative phase diagram. Our results are confirmed through analytical solutions for some simple geometries of the substrate's profile.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport properties of graphene with one-dimensional charge defects

We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers

We show that a coherent picture of the dc conductivity of monolayer and bilayer graphene at finite electronic densities emerges upon considering that strong short-range potentials are the main source of scattering in these two systems. The origin of the strong short-range potentials may lie in adsorbed hydrocarbons at the surface of graphene. The equivalence among results based on the partial-wave description of scattering, the Lippmann-Schwinger equation, and the T-matrix approach is established. Scattering due to resonant impurities close to the neutrality point is investigated via a numerical computation of the Kubo formula using a kernel polynomial method. We find that relevant adsorbate species originate impurity bands in monolayer and bilayer graphene close to the Dirac point. In the midgap region, a plateau of minimum conductivity of about $e^2/h$ (per layer) is induced by the resonant disorder. In bilayer graphene, a large adsorbate concentration can develop an energy gap between midgap and high-energy states. As a consequence, the conductivity plateau is supressed near the edges and a "conductivity gap" takes place. Finally, a scattering formalism for electrons in biased bilayer graphene, taking into account the degeneracy of the spectrum, is developed and the dc conductivity of that system is studied.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Bilayer graphene: gap tunability and edge properties

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy -- the Fermi level of the undoped system -- has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effect of external conditions on the structure of scrolled graphene edges

Characteristic dimensions of carbon nanoscrolls - "buckyrolls" - are calculated by analyzing the competition between elastic, van der Waals, and electrostatic energies for representative models of suspended and substrate-deposited graphene samples. The results are consistent with both atomistic simulations and experimental observations of scrolled graphene edges. Electrostatic control of the wrapping is shown to be practically feasible and its possible device applications are indicated.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Excitonic effects in the optical conductivity of gated graphene

We study the effect of electron-electron interactions in the optical conductivity of graphene under applied bias and derive a generalization of Elliot's formula, commonly used for semiconductors, for the optical intensity. We show that {\it excitonic resonances} are responsible for several features of the experimentally measured mid-infrared response of graphene such as the increase of the conductivity beyond the "universal" value above the Fermi blocked regime, the broadening of the absorption at the threshold, and the decrease of the optical conductivity at higher frequencies. Our results are also in agreement with {\it ab initio} calculations in the neutral regime.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Geometry, mechanics and electronics of singular structures and wrinkles in graphene

As the thinnest atomic membrane, graphene presents an opportunity to combine geometry, elasticity and electronics at the limits of their validity. The availability of reliable atomistic potentials for graphene allows unprecedented precise simulations of the mechanical response of atomic membranes. Here we describe the transport and electronic structure in the neighbourhood of conical singularities, the elementary excitations of the ubiquitous wrinkled and crumpled graphene that occur in non-epitaxial suspended samples where shear stresses are unavoidable. We use a combination of atomistic mechanical simulations, analytical geometry and transport calculations in curved graphene, and exact diagonalization of the electronic spectrum to calculate the effects of geometry on electronic structure, transport and mobility in suspended samples. We also point out how the geometry-generated pseudo-magnetic/electric fields might disrupt Landau quantization under a magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optical Properties of Strained Graphene

The optical conductivity of graphene strained uniaxially is studied within the Kubo-Greenwood formalism. Focusing on inter-band absorption, we analyze and quantify the breakdown of universal transparency in the visible region of the spectrum, and analytically characterize the transparency as a function of strain and polarization. Measuring transmittance as a function of incident polarization directly reflects the magnitude and direction of strain. Moreover, direction-dependent selection rules permit identification of the lattice orientation by monitoring the van-Hove transitions. These photoelastic effects in graphene can be explored towards atomically thin, broadband optical elements.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

1/N Expansion in Correlated Graphene

We examine the 1/N expansion, where N is the number of two-component Dirac fermions, for Coulomb interactions in graphene with a gap of magnitude $Δ= 2 m$. We find that for $Nα\gg1$, where $α$ is graphene's "fine structure constant", there is a crossover as a function of distance $r$ from the usual 3D Coulomb law, $V(r) \sim 1/r$, to a 2D Coulomb interaction, $V(r) \sim \ln(Nα/mr)$, for $m^{-1} \ll r \ll m^{-1} N α/6$. This effect reflects the weak "confinement" of the electric field in the graphene plane. The crossover also leads to unusual renormalization of the quasiparticle velocity and gap at low momenta. We also discuss the differences between the interaction potential in gapped graphene and usual QED for different coupling regimes.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Observation of the Kohn anomaly near the K point of bilayer graphene

The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the Raman features. A softening of the phonon branches was observed near the K point, and results evidence the Kohn anomaly and the importance of considering electron-phonon and electron-electron interactions to correctly describe the phonon dispersion in graphene systems.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Observation of Van Hove singularities in twisted graphene layers

Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this condition is difficult to control. In the case of single-layer graphene, the singularity is too far from the Fermi energy and hence difficult to reach with standard doping and gating techniques. Here we report the observation of low-energy Van Hove singularities in twisted graphene layers seen as two pronounced peaks in the density of states measured by scanning tunneling spectroscopy. We demonstrate that a rotation between stacked graphene layers can generate Van Hove singularities, which can be brought arbitrarily close to the Fermi energy by varying the angle of rotation. This opens intriguing prospects for Van Hove singularity engineering of electronic phases.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Superconducting states of pure and doped graphene

We study the superconducting phases of the two-dimensional honeycomb lattice of graphene. We find two spin singlet pairing states, s-wave and an exotic $p+ip$ that is possible because of the special structure of the honeycomb lattice. At half filling, the $p+ip$ phase is gapless and superconductivity is a hidden order. We discuss the possibility of a superconducting state in metal coated graphene.

0 citations0 reviewsNo code linkedOpen access