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F. Guinea

F. Guinea appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.othercond-matcond-mat.stat-mechcond-mat.softhep-thcond-mat.dis-nnhep-exhep-phphysics.app-phphysics.ins-detsupr-con

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Published work

76 published item(s)

preprint2020arXiv

Colloquium: Spintronics in graphene and other two-dimensional materials

After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future applications. Over the decade since, exciting results have made the field of graphene spintronics blossom, and a second generation of studies has extended to new two-dimensional (2D) compounds. This Colloquium reviews recent theoretical and experimental advances on electronic spin transport in graphene and related 2D materials, focusing on emergent phenomena in van der Waals heterostructures and the new perspectives provided by them. These phenomena include proximity-enabled spin-orbit effects, the coupling of electronic spin to light, electrical tunability, and 2D magnetism.

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preprint2019arXiv

Spin imbalance of charge carriers induced by an electric current

We analyze the contribution of the inhomogeneous magnetic field induced by an electrical current to the spin Hall effect in metals. The Zeeman coupling between the field and the electron spin leads to a spin dependent force, and to spin accumulation at the edges. We compare the effect of this relativistic correction to the electron dynamics to the features induced by the spin-orbit interaction. The effect of current induced magnetic fields on the spin Hall effect can be comparable to the extrinsic contribution from the spin-orbit interaction, although it does not require the presence of heavy elements with a strong spin-orbit interaction. The induced spins are oriented normal to the metal slab.

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preprint2016arXiv

Graphene bubbles on a substrate : Universal shape and van der Waals pressure

Trapped substances between a 2D crystal, such as graphene, and an atomically flat substrate, for example, hexagonal boron nitride, give rise to the formation of bubbles. We show that the size, shape and internal pressure inside these bubbles are determined by the competition between van der Waals attraction of a 2D crystal to the substrate and the elastic energy needed to deform the atomically thin layer. This presents opportunities to use bubbles to study the elasticity of 2D materials as well as the conditions of confinement, yet none of these have been explored so far, either theoretically or experimentally. We have created a variety of bubbles formed by monolayers of graphene, hBN and MoS2 mechanically exfoliated onto hBN, graphite and MoS2 substrates. Their shapes, analyzed using atomic force microscopy, are found to exhibit universal scaling with well-defined aspect ratios, in agreement with theoretical analysis based on general properties of membranes. We also measured the pressure induced by the confinement, which increased with decreasing bubble's size and reached tens on MPa inside submicron bubbles. This agrees with our theory estimates and suggests that for bubbles with radii < 10 nm hydrostatic pressures can reach close to 1 GPa, which may modify the properties of a trapped material.

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preprint2016arXiv

Novel effects of strains in graphene and other two dimensional materials

The analysis of the electronic properties of strained or lattice deformed graphene combines ideas from classical condensed matter physics, soft matter, and geometrical aspects of quantum field theory (QFT) in curved spaces. Recent theoretical and experimental work shows the influence of strains in many properties of graphene not considered before, such as electronic transport, spin-orbit coupling, the formation of Moiré patterns, optics, ... There is also significant evidence of anharmonic effects, which can modify the structural properties of graphene. These phenomena are not restricted to graphene, and they are being intensively studied in other two dimensional materials, such as the metallic dichalcogenides. We review here recent developments related to the role of strains in the structural and electronic properties of graphene and other two dimensional compounds.

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preprint2015arXiv

Majorana Zero Modes in Graphene

A clear demonstration of topological superconductivity (TS) and Majorana zero modes remains one of the major pending goal in the field of topological materials. One common strategy to generate TS is through the coupling of an s-wave superconductor to a helical half-metallic system. Numerous proposals for the latter have been put forward in the literature, most of them based on semiconductors or topological insulators with strong spin-orbit coupling. Here we demonstrate an alternative approach for the creation of TS in graphene/superconductor junctions without the need of spin-orbit coupling. Our prediction stems from the helicity of graphene's zero Landau level edge states in the presence of interactions, and on the possibility, experimentally demonstrated, to tune their magnetic properties with in-plane magnetic fields. We show how canted antiferromagnetic ordering in the graphene bulk close to neutrality induces TS along the junction, and gives rise to isolated, topologically protected Majorana bound states at either end. We also discuss possible strategies to detect their presence in graphene Josephson junctions through Fraunhofer pattern anomalies and Andreev spectroscopy. The latter in particular exhibits strong unambiguous signatures of the presence of the Majorana states in the form of universal zero bias anomalies. Remarkable progress has recently been reported in the fabrication of the proposed type of junctions, which offers a promising outlook for Majorana physics in graphene systems.

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preprint2015arXiv

Superconductivity in Ca-doped graphene

Graphene, a zero-gap semimetal, can be transformed into a metallic, semiconducting or insulating state by either physical or chemical modification. Superconductivity is conspicuously missing among these states despite considerable experimental efforts as well as many theoretical proposals. Here, we report superconductivity in calcium-decorated graphene achieved by intercalation of graphene laminates that consist of well separated and electronically decoupled graphene crystals. In contrast to intercalated graphite, we find that Ca is the only dopant that induces superconductivity in graphene laminates above 1.8 K among intercalants used in our experiments such as potassium, caesium and lithium. Ca-decorated graphene becomes superconducting at ~ 6 K and the transition temperature is found to be strongly dependent on the confinement of the Ca layer and the induced charge carrier concentration. In addition to the first evidence for superconducting graphene, our work shows a possibility of inducing and studying superconductivity in other 2D materials using their laminates.

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preprint2014arXiv

Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2

Imperfections in the crystal structure, such as point defects, can strongly modify the optical and transport properties of materials. Here, we study the effect of point defects on the optical and DC conductivities of single layers of semiconducting transition metal dichalcogenides with the form $M$S$_2$, where $M$=Mo or W. The electronic structure is considered within a six bands tight-binding model, which accounts for the relevant combination of $d$ orbitals of the metal $M$ and $p$ orbitals of the chalcogen $S$. We use the Kubo formula for the calculation of the conductivity in samples with different distributions of disorder. We find that $M$ and/or S defects create mid-gap states that localize charge carriers around the defects and which modify the optical and transport properties of the material, in agreement with recent experiments. Furthermore, our results indicate a much higher mobility for $p$-doped WS$_2$ in comparison to MoS$_2$.

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preprint2014arXiv

Electronic properties of single-layer and multilayer transition metal dichalcogenides $MX_2$ ($M=$ Mo, W and $X=$ S, Se)

Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculations, which include the effect of spin-orbit interaction, we discuss the band structure of single-layer, bilayer and bulk compounds. The band structure of these compounds is highly sensitive to elastic deformations, and we review how strain engineering can be used to manipulate and tune the electronic and optical properties of those materials. We further discuss the effect of disorder and imperfections in the lattice structure and their effect on the optical and transport properties of $MX_2$. The superconducting transition in these compounds, which has been observed experimentally, is analyzed, as well as the different mechanisms proposed so far to explain the pairing. Finally, we include a discussion on the excitonic effects which are present in these systems.

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preprint2014arXiv

Giant Interaction-Induced Gap and Electronic Phases in Rhombohedral Trilayer Graphene

Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in spontaneous symmetry breaking, which is responsible for a large class of physical phenomena ranging from mass generation in high energy physics to correlated states such as superconductivity and magnetism in condensed matter. Here, using transport measurements, we show that rhombohedral-stacked trilayer graphene (r-TLG) offers a simple, yet novel and tunable, platform for study of various phases with spontaneous or field-induced broken symmetries. Here, we show that, contrary to predictions by tight-binding calculations, rhombohedral-stacked trilayer graphene (r-TLG) is an intrinsic insulator, with a giant interaction-induced gap Δ~42meV. This insulating state is a spontaneous layer antiferromagnetic with broken time reversal symmetry, and can be suppressed by increasing charge density n, an interlayer potential, a parallel magnetic field, or a critical temperature Tc~38K. This gapped collective state can be explored for switches with low input power and high on/off ratio.

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preprint2014arXiv

Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides

One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs, including explicitly the role of the chalcogen orbitals and their hybridization with the transition metal atoms. To this aim, we combine density functional theory (DFT) calculations with a Slater-Koster tight-binding model. Whereas most of the previous tight-binding models have been restricted to the K and K' points of the Brillouin zone (BZ), here we consider the effect of SOC in the whole BZ, and the results are compared to the band structure obtained by DFT methods. The tight-binding model is used to analyze the effect of SOC in the band structure, considering separately the contributions from the transition metal and the chalcogen atoms. Finally, we present a scenario where, in the case of strong SOC, the spin/orbital/valley entanglement at the minimum of the conduction band at Q can be probed and be of experimental interest in the most common cases of electron-doping reported for this family of compounds.

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preprint2014arXiv

Reply to 'Comment on "Thermodynamics of quantum crystalline membranes"'

In this note, we reply to the comment made by E.I.Kats and V.V.Lebedev [arXiv:1407.4298] on our recent work "Thermodynamics of quantum crystalline membranes" [Phys. Rev. B 89, 224307 (2014)]. Kats and Lebedev question the validity of the calculation presented in our work, in particular on the use of a Debye momentum as a ultra-violet regulator for the theory. We address and counter argue the criticisms made by Kats and Lebedev to our work.

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preprint2014arXiv

Stacking boundaries and transport in bilayer graphene

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties, with a minimal conductivity of the order of $2e^2/h$. Here we propose an explanation for this dichotomy, which is unrelated to electron interactions and based instead on the reversible formation of boundaries between stacking domains (`solitons'). We argue, using a numerical analysis, that the hallmark features of the previously inferred many-body insulating state can be explained by scattering on boundaries between domains with different stacking order (AB and BA). We furthermore present experimental evidence, reinforcing our interpretation, of reversible switching between a metallic and an insulating regime in suspended bilayers when subjected to thermal cycling or high current annealing.

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preprint2014arXiv

Thermodynamics of quantum crystalline membranes

We investigate the thermodynamic properties and the lattice stability of two-dimensional crystalline membranes, such as graphene and related compounds, in the low temperature quantum regime $T\rightarrow0$. A key role is played by the anharmonic coupling between in-plane and out-of plane lattice modes that, in the quantum limit, has very different consequences than in the classical regime. The role of retardation, namely of the frequency dependence, in the effective anharmonic interactions turns out to be crucial in the quantum regime. We identify a crossover temperature, $T^{*}$, between classical and quantum regimes, which is $\sim 70 - 90$ K for graphene. Below $T^{*}$, the heat capacity and thermal expansion coefficient decrease as power laws with decreasing temperature, tending to zero for $T\rightarrow0$ as required by the third law of thermodynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Zero-bias conductance peak in detached flakes of superconducting 2H-TaS$_2$ probed by scanning tunneling spectroscopy

We report an anomalous tunneling conductance with a zero bias peak in flakes of superconducting 2H-TaS$_2$ detached through mechanical exfoliation. To explain the observed phenomenon, we construct a minimal model for a single unit cell layer of superconducting 2H-TaS$_2$ with a simplified 2D Fermi surface and sign-changing Cooper pair wavefunction induced by Coulomb repulsion. Superconductivity is induced in the central $Γ$ pocket, where it becomes nodal. We show that weak scattering at the nodal Fermi surface, produced by non-perturbative coupling between tip and sample, gives Andreev states that lead to a zero bias peak in the tunneling conductance. We suggest that reducing dimensionality down to a few atom thick crystals could drive a crossover from conventional to sign changing pairing in the superconductor 2H-TaS$_2$.

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preprint2013arXiv

Accurate determination of electron-hole asymmetry and next-nearest neighbor hopping in graphene

The next-nearest neighbor hopping term t' determines a magnitude and, hence, importance of several phenomena in graphene, which include self-doping due to broken bonds and the Klein tunneling that in the presence of t' is no longer perfect. Theoretical estimates for t' vary widely whereas a few existing measurements by using polarization resolved magneto-spectroscopy have found surprisingly large t', close or even exceeding highest theoretical values. Here we report dedicated measurements of the density of states in graphene by using high-quality capacitance devices. The density of states exhibits a pronounced electron-hole asymmetry that increases linearly with energy. This behavior yields t' approx -0.30 eV +-15%, in agreement with the high end of theory estimates. We discuss the role of electron-electron interactions in determining t' and overview phenomena which can be influenced by such a large value of t'.

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preprint2013arXiv

Cloning of Dirac fermions in graphene superlattices

Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron orbits. Evidence for the formation of superlattice minibands (so called Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moire potential leads to profound changes in graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity accompanied by reversal of the Hall effect. The latter indicates that the sign of the effective mass changes within graphene's conduction and valence bands. Quantizing magnetic fields lead to Zak-type cloning of the third generation of Dirac points that are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices open a venue to study the rich physics expected for incommensurable quantum systems and illustrate the possibility to controllably modify electronic spectra of 2D atomic crystals by using their crystallographic alignment within van der Waals heterostuctures.

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preprint2013arXiv

Density functional theory analysis of flexural modes, elastic constants, and corrugations in strained graphene

Ab initio density functional theory has been used to analyze flexural modes, elastic constants, and atomic corrugations on single and bi-layer graphene. Frequencies of flexural modes are sensitive to compressive stress; its variation under stress can be related to the anomalous thermal expansion via a simple model based in classical Elasticity Theory [Phys. Rev. B 86, 144103]. Under compression, flexural modes are responsible for a long wavelength rippling with a large amplitude and a marked anharmonic behavior. This is compared with corrugations created by thermal fluctuations and the adsorption of a light impurity (hydrogen). Typical values for the later are in the sub-Angstrom regime, while maximum corrugations associated to bending modes quickly increase up to a few Angstroms under a compressive stress, due to the intrinsic instability of flexural modes

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preprint2013arXiv

Interactions and superconductivity in heavily doped MoS2

We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS$_2$. We show how the combination of the valley structure of the conduction band, the density dependence of the screening of the long range Coulomb interactions, the short range electronic repulsion, and the relative weakness of the electron-phonon interactions, makes possible the existence of a phase where the superconducting order parameter has opposite signs in different valleys, resembling the superconductivity found in the pnictides and cuprates.

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preprint2013arXiv

Majorana Fermions in Topological Superconducting Metallic Nanowires probed by a Superconducting Condensate

We report on several low temperature experiments supporting the presence of Majorana fermions in superconducting lead nanowires fabricated with a scanning tunneling microscope. These nanowires are the connecting bridges between the STM tip and the sample resulting from indentation processes. We show here that by a controlled tuning of the geometry of the nanowire region, in which superconductivity is confined by applied magnetic fields, the conductance curves obtained in these situations are indicative of topological superconductivity and Majorana fermions. The most prominent feature of this behavior is the emergence of a zero bias peak in the conductance curves, superimposed on a background characteristic of the conductance between a normal metal and a superconductor in the Andreev regime. The zero bias peak emerges in some nanowires when a magnetic field larger that the lead bulk critical field is applied. This field drives one of the electrodes into the normal state while the other, the tip, remains superconducting on its apex. Meanwhile a topological superconducting state appears in the connecting nanowire of nanometric size.

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preprint2013arXiv

Many body renormalization of the minimal conductivity in graphene

The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a diffusive metal, despite the difference in the physical mechanisms involved. The electron-electron interaction modifies this regime, and plays a role similar to that of the environment in macroscopic quantum phenomena. We show that interactions, and the presence of external gates, change substantially the transport properties, and can lead to a diverging resistivity at the neutrality point.

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preprint2013arXiv

Quantum Spin Hall Effect in Two-dimensional Crystals of Transition Metal Dichalcogenides

We propose to engineer time-reversal-invariant topological insulators in two-dimensional (2D) crystals of transition metal dichalcogenides (TMDCs). We note that, at low doping, semiconducting TMDCs under shear strain will develop spin-polarized Landau levels residing in different valleys. We argue that gaps between Landau levels in the range of $10-100$ Kelvin are within experimental reach. In addition, we point out that a superlattice arising from a Moiré pattern can lead to topologically non-trivial subbands. As a result, the edge transport becomes quantized, which can be probed in multi-terminal devices made using strained 2D crystals and/or heterostructures. The strong $d$ character of valence and conduction bands may also allow for the investigation of the effects of electron correlations on the topological phases.

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preprint2013arXiv

Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals

We propose a theory of spin relaxation of electrons and holes in two-dimensional hexagonal crystals such as atomic layers of transition metal dichalcogenides (MoS2, WSe2, etc). We show that even in intrinsically defectless crystals, their flexural deformations are able to generate spin relaxation of carriers. Based on symmetry analysis, we formulate a generic model for spin-lattice coupling between electrons and flexural deformations, and use it to determine temperature and material-dependent spin lifetimes in atomic crystals in ambient conditions.

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preprint2013arXiv

Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS$_2$

In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modelling of the single-layer hopping terms by simply adding the proper interlayer hoppings ruled by the chalcogenide atoms. We show that such tight-binding model permits to understand and control in a natural way the transition between a direct-gap band structure, in single-layer systems, to an indirect gap in multilayer compounds in terms of a momentum/orbital selective interlayer splitting of the relevant valence and conduction bands. The model represents also a suitable playground to investigate in an analytical way strain and finite-size effects.

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preprint2013arXiv

Transverse current current response of graphene at finite temperature, plasmons and absorption

We calculate the linear transverse current current response function for graphene at finite temperature and chemical potential. Within the Random Phase Approximation, we then discuss general aspects of transverse plasmons beyond the local response such as their dependence on temperature and on the surrounding dielectric media. We find, e.g., maximal confinement of this mode for a homogeneous dielectric media with refractive index $n\simeq 40$. Confinement can further be enhanced by placing the graphene sheet inside an optical cavity, but there exists a critical width below which no transverse mode can be sustained. For zero doping and finite temperature, there are no well-defined transverse plasmonic excitations in contrast to the longitudinal channel. We also discuss the absorption of electromagnetic radiation in single and double-layer systems for $s$ and $p$ polarizations and point out that the theoretical limit of 50% is reached for $s$-polarized light with incident angle of $θ\approx89^o$.

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preprint2012arXiv

Bending modes, anharmonic effects and thermal expansion coefficient in single layer and multilayer graphene

We present a simple analytical approach to study anharmonic effects in single layer, bilayer, and multilayer graphene. The coupling between in plane and out of plane modes leads to negative Grüneisen coefficients and negative thermal expansion. The value of the thermal expansion coefficient depends on the coupling to the substrate. The bending rigidity in bilayer graphene shows a crossover between a long wavelength regime where its value is determined by the in plane elastic properties and a short wavelength regime where its value approaches twice that of a single layer.

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preprint2012arXiv

Electron-Electron Interactions in Graphene: Current Status and Perspectives

We review the problem of electron-electron interactions in graphene. Starting from the screening of long range interactions in these systems, we discuss the existence of an emerging Dirac liquid of Lorentz invariant quasi-particles in the weak coupling regime, and strongly correlated electronic states in the strong coupling regime. We also analyze the analogy and connections between the many-body problem and the Coulomb impurity problem. The problem of the magnetic instability and Kondo effect of impurities and/or adatoms in graphene is also discussed in analogy with classical models of many-body effects in ordinary metals. We show that Lorentz invariance plays a fundamental role and leads to effects that span the whole spectrum, from the ultraviolet to the infrared. The effect of an emerging Lorentz invariance is also discussed in the context of finite size and edge effects as well as mesoscopic physics. We also briefly discuss the effects of strong magnetic fields in single layers and review some of the main aspects of the many-body problem in graphene bilayers. In addition to reviewing the fully understood aspects of the many-body problem in graphene, we show that a plethora of interesting issues remain open, both theoretically and experimentally, and that the field of graphene research is still exciting and vibrant.

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preprint2012arXiv

GraXe, graphene and xenon for neutrinoless double beta decay searches

We propose a new detector concept, GraXe (to be pronounced as grace), to search for neutrinoless double beta decay in Xe-136. GraXe combines a popular detection medium in rare-event searches, liquid xenon, with a new, background-free material, graphene. In our baseline design of GraXe, a sphere made of graphene-coated titanium mesh and filled with liquid xenon (LXe) enriched in the Xe-136 isotope is immersed in a large volume of natural LXe instrumented with photodetectors. Liquid xenon is an excellent scintillator, reasonably transparent to its own light. Graphene is transparent over a large frequency range, and impermeable to the xenon. Event position could be deduced from the light pattern detected in the photosensors. External backgrounds would be shielded by the buffer of natural LXe, leaving the ultra-radiopure internal volume virtually free of background. Industrial graphene can be manufactured at a competitive cost to produce the sphere. Enriching xenon in the isotope Xe-136 is easy and relatively cheap, and there is already near one ton of enriched xenon available in the world (currently being used by the EXO, KamLAND-Zen and NEXT experiments). All the cryogenic know-how is readily available from the numerous experiments using liquid xenon. An experiment using the GraXe concept appears realistic and affordable in a short time scale, and its physics potential is enormous.

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preprint2012arXiv

Local Moment Formation and Kondo Effect in Defective Graphene

We study the local moment formation and the Kondo effect at single-atom vacancies in Graphene. We develop a model accounting for the vacancy reconstruction as well as non-planarity effects induced by strain and/or temperature. Thus, we find that the dangling $σ$ orbital localized at the vacancy is allowed to strongly hybridize with the $π$-band since the scattering with the vacancy turns the hybridization into singular function of the energy ($\sim [|ε| \ln^2 ε/D]^{-1}$, $D\sim$ the bandwidth). This leads to several new types of impurity phases, which control the magnitude of the vacancy magnetic moment and the possibility of Kondo effect depending on the strength of the local Coulomb interactions, the Hund's rule coupling, the doping level, and the degree of particle-symmetry breaking.

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preprint2012arXiv

Resonant plasmonic effects in periodic graphene antidot arrays

We show that a graphene sheet perforated with micro- or nano-size antidots have prominent absorption resonances in the microwave and terahertz regions. These resonances correspond to surface plasmons of a continuous sheet "perturbed" by a lattice. They are excited in different diffraction orders, in contrast to cavity surface plasmon modes existing in disconnected graphene structures. The resonant absorption by the antidot array can essentially exceed the absorption by a continuous graphene sheet, even for high antidot diameter-to-period aspect ratios. Surface plasmon-enhanced absorption and suppressed transmission is more efficient for higher relaxation times of the charge carriers.

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preprint2012arXiv

Scattering by flexural phonons in suspended graphene under back gate induced strain

We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion relation, which becomes linear at long wavelength when the sample is under tension due to the rotation symmetry breaking. In the non-strained case, scattering by flexural phonons is the main limitation to electron mobility. This picture changes drastically when strains above $\bar{u}=10^{-4} n(10^{12}\,\text{cm}^{-2})$ are considered. Here we study in particular the case of back gate induced strain, and apply our theoretical findings to recent experiments in suspended graphene.

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preprint2012arXiv

Spin-orbit coupling assisted by flexural phonons in graphene

We analyze the couplings between spins and phonons in graphene. We present a complete analysis of the possible couplings between spins and flexural, out of plane, vibrations. From tight-binding models we obtain analytical and numerical estimates of their strength. We show that dynamical effects, induced by quantum and thermal fluctuations, significantly enhance the spin-orbit gap.

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preprint2012arXiv

Topological superconductivity in lead nanowires

Superconductors with an odd number of bands crossing the Fermi energy have topologically protected Andreev states at interfaces, including Majorana states in one dimensional geometries. Superconductivity, a low number of 1D channels, large spin orbit coupling, and a sizeable Zeeman energy, are present in lead nanowires produced by nanoindentation of a Pb tip on a Pb substrate, in magnetic fields higher than the Pb bulk critical field. A number of such devices have been analyzed. In some of them, the dependence of the critical current on magnetic field, and the Multiple Andreev Reflections observed at finite voltages, are compatible with the existence of topological superconductivity.

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preprint2011arXiv

Dirac cones reshaped by interaction effects in suspended graphene

We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity describing the spectral slope reaches ~3x10^6 m/s at n <10^10 cm^-2, three times the value commonly used for graphene. The observed changes are attributed to electron-electron interaction that renormalizes the Dirac spectrum because of weak screening. Our experiments also put an upper limit of ~0.1 meV on the possible gap in graphene.

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preprint2011arXiv

Edge and waveguide THz surface plasmon modes in graphene micro-ribbons

Surface plasmon modes supported by graphene ribbon waveguides are studied and classified. The properties of both modes with the field concentration within the ribbon area (waveguiding modes) and on the edges (edge modes) are discussed. The waveguide and edge modes are shown to be separated from each other by a gap in wavenumbers. The even-parity hybridized edge mode results to be the fundamental electromagnetic mode of the ribbon, possessing also the lowest losses. All the plasmonic modes in the ribbons have an optimum frequency, at which the absorption losses are minimum, due to competition between the plasmon confinement and the frequency dependence of absorption in graphene.

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preprint2011arXiv

Elliot-Yafet mechanism in graphene

The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times acquires a dependence on the carrier density, which is independent of the scattering mechanism and the relation between mobility and carrier concentration. This dependence puts severe restrictions on the origin of the spin relaxation in graphene. The density dependence of the spin relaxation allows us to distinguish between ordinary impurities and defects which modify locally the spin-orbit interaction.

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preprint2011arXiv

Fields radiated by a nanoemitter in a graphene sheet

The extraordinary properties of graphene make it a very promising material for use in optoelectronics. However, this is still a nascent field, where some basic properties of the electromagnetic field in graphene must be explored. Here we report on the fields radiated by a nanoemitter lying on a graphene sheet. Our results show that this field presents a rich dependence on both frequency, distance to the source and dipole orientation. This behavior is attributed to distinct peculiarities on the density of electromagnetic states in the graphene sheet and the interaction between them. The field is mainly composed of an core region of high-intensity electromagnetic field, dominated by surface plasmons, and an outer region where the field is practically the same it would be for an emitter in vacuum. Within the core region, the intensity of the electric field is several orders of magnitude larger than what it would be in vacuum. Importantly, the size of this core region can be controlled thorough external gates, which opens up many interesting applications in, for instance, surface optics and spectroscopy. Additionally, the large coupling between nanoemitters and surface plasmons makes graphene sheets a propitious stage for quantum-optics, in which the interaction between quantum objects could be externally tailored at will.

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preprint2011arXiv

Gaps tunable by electrostatic gates in strained graphene

We show that when the pseudomagnetic fields created by long wavelength deformations are appropriately coupled with a scalar electric potential, a significant energy gap can emerge due to the formation of a Haldane state. Ramifications of this physical effect are examined through the study of various strain geometries commonly seen in experiments, such as strain superlattices and wrinkled suspended graphene. Of particular technological importance, we consider setup where this gap can be tunable through electrostatic gates, allowing for the design of electronic devices not realizable with other materials.

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preprint2011arXiv

Integer Quantum Hall Effect in Trilayer Graphene

The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.

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preprint2011arXiv

Interactions and magnetic moments near vacancies and resonant impurities in graphene

The effect of electronic interactions in graphene with vacancies or resonant scatterers is investigated. We apply dynamical mean-field theory in combination with quantum Monte Carlo simulations, which allow us to treat non-perturbatively quantum fluctuations beyond Hartree-Fock approximations. The interactions narrow the width of the resonance and induce a Curie magnetic susceptibility, signaling the formation of local moments. The absence of saturation of the susceptibility at low temperatures suggests that the coupling between the local moment and the conduction electrons is ferromagnetic.

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preprint2011arXiv

Pinning of a two-dimensional membrane on top of a patterned substrate: the case of graphene

We study the pinning of a two-dimensional membrane to a patterned substrate within elastic theory both in the bending rigidity and in the strain dominated regimes. We find that both the in-plane strains and the bending rigidity can lead to depinning. We show from energetic arguments that the system experiences a first order phase transition between the attached configuration to a partially detached one when the relevant parameters of the substrate are varied, and we construct a qualitative phase diagram. Our results are confirmed through analytical solutions for some simple geometries of the substrate's profile.

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preprint2011arXiv

Strains and pseudo-magnetic fields in circular graphene rings

We demonstrate that circular graphene ring under a shear stress displays strong pseudo-magnetic fields. We calculate the pseudo-magnetic field both from continuum elasticity theory as well as molecular dynamics simulations. Stable wrinkles are induced by shear deformations and lead to enhancement of the pseudo-magnetic field. The strong pseudo-magnetic field found here can be observed by imaging graphene flake at the atomic level e.g. through scanning tunneling microscope.

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preprint2011arXiv

Surface plasmon enhanced absorption and suppressed transmission in periodic arrays of graphene ribbons

Resonance diffraction in the periodic array of graphene micro-ribbons is theoretically studied following a recent experiment [L. Ju et al, Nature Nanotech. 6, 630 (2011)]. Systematic studies over a wide range of parameters are presented. It is shown that a much richer resonant picture would be observable for higher relaxation times of charge carriers: more resonances appear and transmission can be totally suppressed. The comparison with the absorption cross-section of a single ribbon shows that the resonant features of the periodic array are associated with leaky plasmonic modes. The longest-wavelength resonance provides the highest visibility of the transmission dip and has the strongest spectral shift and broadening with respect to the single-ribbon resonance, due to collective effects.

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preprint2011arXiv

Temperature dependent resistivity in bilayer graphene due to flexural phonons

We have studied electron scattering by out-of-plane (flexural) phonons in doped suspended bilayer graphene. We have found the bilayer membrane to follow the qualitative behavior of the monolayer cousin. In the bilayer, different electronic structure combine with different electron-phonon coupling to give the same parametric dependence in resistivity, and in particular the same temperature $T$ behavior. In parallel with the single layer, flexural phonons dominate the phonon contribution to resistivity in the absence of strain, where a density independent mobility is obtained. This contribution is strongly suppressed by tension, and in-plane phonons become the dominant contribution in strained samples. Among the quantitative differences an important one has been identified: room $T$ mobility in bilayer graphene is substantially higher than in monolayer. The origin of quantitative differences has been unveiled.

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preprint2011arXiv

Topologically Protected Zero Modes in Twisted Bilayer Graphene

We show that the twisted graphene bilayer can reveal unusual topological properties at low energies, as a consequence of a Dirac-point splitting. These features rely on a symmetry analysis of the electron hopping between the two layers of graphene and we derive a simplified effective low-energy Hamiltonian which captures the essential topological properties of twisted bilayer graphene. The corresponding Landau levels peculiarly reveal a degenerate zero-energy mode which cannot be lifted by strong magnetic fields.

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preprint2010arXiv

Bilayer graphene: gap tunability and edge properties

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy -- the Fermi level of the undoped system -- has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.

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preprint2010arXiv

Effect of external conditions on the structure of scrolled graphene edges

Characteristic dimensions of carbon nanoscrolls - "buckyrolls" - are calculated by analyzing the competition between elastic, van der Waals, and electrostatic energies for representative models of suspended and substrate-deposited graphene samples. The results are consistent with both atomistic simulations and experimental observations of scrolled graphene edges. Electrostatic control of the wrapping is shown to be practically feasible and its possible device applications are indicated.

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preprint2010arXiv

Electron-induced rippling in graphene

We show that the interaction between flexural phonons, when corrected by the exchange of electron-hole excitations, may place the graphene sheet very close to a quantum critical point characterized by the strong suppression of the bending rigidity of the membrane. Ripples arise then due to spontaneous symmetry breaking, following a mechanism similar to that responsible for the condensation of the Higgs field in relativistic field theories. In the presence of membrane tensions, ripple condensation may be reinforced or suppressed depending on the sign of the tension, following a zero-temperature buckling transition in which the order parameter is given essentially by the square of the gradient of the flexural phonon field.

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preprint2010arXiv

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$.

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preprint2010arXiv

Gauge fields in graphene

The physics of graphene is acting as a bridge between quantum field theory and condensed matter physics due to the special quality of the graphene quasiparticles behaving as massless two dimensional Dirac fermions. Moreover, the particular structure of the 2D crystal lattice sets the arena to study and unify concepts from elasticity, topology and cosmology. In this paper we analyze these connections combining a pedagogical, intuitive approach with a more rigorous formalism when required.

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preprint2010arXiv

Limits on electron quality in suspended graphene due to flexural phonons

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases quadratically with $T$. Flexural phonons limit the intrinsic mobility down to a few $\text{m}^2/\text{Vs}$ at room $T$. Their effect can be eliminated by applying strain or placing graphene on a substrate.

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preprint2010arXiv

Robustness of edge states in graphene quantum dots

We analyze the single particle states at the edges of disordered graphene quantum dots. We show that generic graphene quantum dots support a number of edge states proportional to circumference of the dot over the lattice constant. Our analytical theory agrees well with numerical simulations. Perturbations breaking electron-hole symmetry like next-nearest neighbor hopping or edge impurities shift the edge states away from zero energy but do not change their total amount. We discuss the possibility of detecting the edge states in an antidot array and provide an upper bound on the magnetic moment of a graphene dot.

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preprint2010arXiv

Spin connection and boundary states in a topological insulator

We study the surface resistivity of a three-dimensional topological insulator when the boundaries exhibit a non trivial curvature. We obtain an analytical solution for a spherical topological insulator, and we show that a non trivial quantum spin connection emerges from the three dimensional band structure. We analyze the effect of the spin connection on the scattering by a bump on a flat surface. Quantum effects induced by the geometry lead to resonances when the electron wavelength is comparable to the size of the bump.

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preprint2010arXiv

Spin-orbit coupling in a graphene bilayer and in graphite

The intrinsic spin-orbit interactions in bilayer graphene and in graphite are studied, using a tight binding model, and an intraatomic LS coupling. The spin-orbit interactions in bilayer graphene and graphite are larger, by about one order of magnitude, than the interactions in single layer graphene, due to the mixing of pi and sigma bands by interlayer hopping. Their value is in the range 0.1 - 1K. The spin-orbit coupling opens a gap in bilayer graphene, and it also gives rise to two edge modes. The spin-orbit couplings are largest, 1-4K, in orthorhombic graphite, which does not have a center of inversion.

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preprint2010arXiv

Strain-induced pseudo-magnetic field for novel graphene electronics

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained graphene flakes of sizes of 100nm, we examine possible means of exploiting this effect for practical electronics and valleytronics devices. First, we found that elastic backscattering at rough edges leads to the formation of well defined transport gaps of order 100meV under moderate maximum strain of 10%. Second, the application of a real magnetic field induced a separation, in space and energy, of the states arising from different valleys, leading to a way of inducing bulk valley polarization which is insensitive to short range scattering.

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preprint2010arXiv

The Effect of Cluster Formation on Graphene Mobility

We investigate the effect of gold (Au) atoms in the form of both point-like charged impurities and clusters on the transport properties of graphene. Cryogenic deposition (18 K) of Au decreases the mobility and shifts the Dirac point in a manner that is consistent with scattering from point-like charged impurities. Increasing the temperature to room temperature promotes the formation of clusters, which is verified with atomic force microscopy. We find that for a fixed amount of Au impurities, the formation of clusters enhances the mobility and causes the Dirac point to shift back towards zero.

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preprint2010arXiv

The missing atom as a source of carbon magnetism

Atomic vacancies have a strong impact in the mechanical, electronic and magnetic properties of graphene-like materials. By artificially generating isolated vacancies on a graphite surface and measuring their local density of states on the atomic scale, we have shown how single vacancies modify the electronic properties of this graphene-like system. Our scanning tunneling microscopy experiments, complemented by tight binding calculations, reveal the presence of a sharp electronic resonance at the Fermi energy around each single graphite vacancy, which can be associated with the formation of local magnetic moments and implies a dramatic reduction of the charge carriers' mobility. While vacancies in single layer graphene naturally lead to magnetic couplings of arbitrary sign, our results show the possibility of inducing a macroscopic ferrimagnetic state in multilayered graphene samples just by randomly removing single C atoms.

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preprint2010arXiv

Two-body problem in graphene

We study the problem of two Dirac particles interacting through non-relativistic potentials and confined to a two-dimensional sheet, which is the relevant case for graphene layers. The two-body problem cannot be mapped into that of a single particle, due to the non-trivial coupling between the center-of-mass and the relative coordinates, even in the presence of central potentials. We focus on the case of zero total momentum, which is equivalent to that of a single particle in a Sutherland lattice. We show that zero-energy states induce striking new features such as discontinuities in the relative wave function, for particles interacting through a step potential, and a concentration of relative density near the classical turning point, if particles interact via a Coulomb potential. In the latter case we also find that the two-body system becomes unstable above a critical coupling. These phenomena may have bearing on the nature of strong coupling phases in graphene.

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preprint2010arXiv

Variational approach to the excitonic phase transition in graphene

We analyze the Coulomb interacting problem in undoped graphene layers by using an excitonic variational ansatz. By minimizing the energy, we derive a gap equation which reproduces and extends known results. We show that a full treatment of the exchange term, which includes the renormalization of the Fermi velocity, tends to suppress the phase transition by increasing the critical coupling at which the excitonic instability takes place.

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preprint2009arXiv

Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no carriers and the half-integer quantum Hall effect (QHE) observable even at room temperature [1-3]. Because graphene is only one atom thick, it is also amenable to external influences including mechanical deformation. The latter offers a tempting prospect of controlling graphene's properties by strain and, recently, several reports have examined graphene under uniaxial deformation [4-8]. Although the strain can induce additional Raman features [7,8], no significant changes in graphene's band structure have been either observed or expected for realistic strains of approx. 10% [9-11]. Here we show that a designed strain aligned along three main crystallographic directions induces strong gauge fields [12-14] that effectively act as a uniform magnetic field exceeding 10 T. For a finite doping, the quantizing field results in an insulating bulk and a pair of countercirculating edge states, similar to the case of a topological insulator [15-20]. We suggest realistic ways of creating this quantum state and observing the pseudo-magnetic QHE. We also show that strained superlattices can be used to open significant energy gaps in graphene's electronic spectrum.

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preprint2009arXiv

Generating quantizing pseudomagnetic fields by bending graphene ribbons

We analyze the mechanical deformations that are required to create uniform pseudomagnetic fields in graphene. It is shown that, if a ribbon is bent in-plane into a circular arc, this can lead to fields exceeding 10T, which is sufficient for the observation of pseudo-Landau quantization. The arc geometry is simpler than those suggested previously and, in our opinion, has much better chances to be realized experimentally soon. The effects of a scalar potential induced by dilatation in this geometry is shown to be negligible.

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preprint2009arXiv

Impurity induced spin-orbit coupling in graphene

We study the effect of impurities in inducing spin-orbit coupling in graphene. We show that the sp3 distortion induced by an impurity can lead to a large increase in the spin-orbit coupling with a value comparable to the one found in diamond and other zinc-blende semiconductors. The spin-flip scattering produced by the impurity leads to spin scattering lengths of the order found in recent experiments. Our results indicate that the spin-orbit coupling can be controlled via the impurity coverage.

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preprint2009arXiv

Periodically modulated geometric and electronic structure of graphene on Ru(0001)

We report here on a method to fabricate and characterize highly perfect, periodically rippled graphene monolayers and islands, epitaxially grown on single crystal metallic substrates under controlled UHV conditions. The periodicity of the ripples is dictated by the difference in lattice parameters of graphene and substrate, and, thus, it is adjustable. We characterize its perfection at the atomic scale by means of STM and determine its electronic structure in the real space by local tunnelling spectroscopy. There are periodic variations in the geometric and electronic structure of the graphene monolayer. We observe inhomogeneities in the charge distribution, i.e a larger occupied Density Of States at the higher parts of the ripples. Periodically rippled graphene might represent the physical realization of an ordered array of coupled graphene quantum dots. The data show, however, that for rippled graphene on Ru(0001) both the low and the high parts of the ripples are metallic. The fabrication of periodically rippled graphene layers with controllable characteristic length and different bonding interactions with the substrate will allow a systematic experimental test of this fundamental problem.

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preprint2009arXiv

Propagating, evanescent, and localized states in carbon nanotube-graphene junctions

We study the electronic structure of the junctions between a single graphene layer and carbon nanotubes, using a tight-binding model and the continuum theory based on Dirac fermion fields. The latter provides a unified description of different lattice structures with curvature, which is always localized at six heptagonal carbon rings around each junction. When these are evenly spaced, we find that it is possible to curve the planar lattice into armchair (6n,6n) as well as zig-zag (6n,0) nanotubes. We show that the junctions fall into two different classes, regarding the low-energy electronic behavior. One of them, constituted by the junctions made of the armchair nanotubes and the zig-zag (6n,0) geometries when n is a multiple of 3, is characterized by the presence of two quasi-bound states at the Fermi level, which are absent for the rest of the zig-zag nanotubes. These states, localized at the junction, are shown to arise from the effective gauge flux induced by the heptagonal carbon rings, which has a direct reflection in the local density of states around the junction. Furthermore, we also analyze the band structure of the arrays of junctions, finding out that they can also be classified into two different groups according to the low-energy behavior. In this regard, the arrays made of armchair and (6n,0) nanotubes with n equal to a multiple of 3 are characterized by the presence of a series of flat bands, whose number grows with the length of the nanotubes. We show that such flat bands have their origin in the formation of states confined to the nanotubes in the array. This is explained in the continuum theory from the possibility of forming standing waves in the mentioned nanotube geometries, as a superposition of modes with opposite momenta and the same quantum numbers under the C_6v symmetry of the junction.

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preprint2009arXiv

Spin-Orbit-Mediated Spin Relaxation in Graphene

We investigate how spins relax in intrinsic graphene. The spin-orbit coupling arises from the band structure and is enhanced by ripples. The orbital motion is influenced by scattering centers and ripple-induced gauge fields. Spin relaxation due to Elliot-Yafet and Dyakonov-Perel mechanisms and gauge fields in combination with spin-orbit coupling are discussed. In intrinsic graphene, the Dyakonov-Perel mechanism and spin flip due to gauge fields dominate and the spin-flip relaxation time is inversely proportional to the elastic scattering time. The spin relaxation anisotropy depends on an intricate competition between these mechanisms. Experimental consequences are discussed.

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preprint2009arXiv

Synthetic electric fields and phonon damping in carbon nanotubes and graphene

Smoothly varying lattice strain in graphene affects the Dirac carriers through a synthetic gauge field. When the lattice strain is time dependent, as in connection with phononic excitations, the gauge field becomes time dependent and the synthetic vector potential is also associated with an electric field. We show that this synthetic electric field has observable consequences. Joule heating associated with the currents driven by the synthetic electric field dominates the intrinsic damping, caused by the electron-phonon interaction, of many acoustic phonon modes of graphene and metallic carbon nanotubes when including the effects of disorder and Coulomb interactions. Several important consequences follow from the observation that by time-reversal symmetry, the synthetic electric field associated with the vector potential has opposite signs for the two valleys. First, this implies that the synthetic electric field drives charge-neutral valley currents and is therefore unaffected by screening. This frequently makes the effects of the synthetic vector potential more relevant than a competing effect of the scalar deformation potential which has a much larger bare coupling constant. Second, valley currents decay by electron-electron scattering (valley Coulomb drag) which causes interesting temperature dependence of the damping rates. While our theory pertains first and foremost to metallic systems such as doped graphene and metallic carbon nanotubes, the underlying mechanisms should also be relevant for semiconducting carbon nanotubes when they are doped.

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preprint2007arXiv

Dissipation in graphene and nanotube resonators

Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment losses, and thermoelastic losses. We find that, for realistic structures and contrary to semiconductor resonators, dissipation is dominated by ohmic losses in the graphene layer and metallic gate. An extension of this study to carbon nanotube-based resonators is presented.

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preprint2007arXiv

Fermi Liquid Theory of a Fermi Ring

We study the effect of electron-electron interactions in the electronic properties of a biased graphene bilayer. This system is a semiconductor with conduction and valence bands characterized by an unusual ``mexican-hat'' dispersion. We focus on the metallic regime where the chemical potential lies in the ``mexican-hat'' in the conduction band, leading to a topologically non-trivial Fermi surface in the shape of a ring. We show that due to the unusual topology of the Fermi surface electron-electron interactions are greatly enhanced. We discuss the possibility of an instability towards a ferromagnetic phase due to this enhancement. We compute the electronic polarization function in the random phase approximation and show that, while at low energies the system behaves as a Fermi liquid (albeit with peculiar Friedel oscillations), at high frequencies it shows a highly anomalous response when compare to ordinary metals.

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preprint2006arXiv

Electronic properties of graphene multilayers

We study the effects of disorder in the electronic properties of graphene multilayers, with special focus on the bilayer and the infinite stack. At low energies and long wavelengths, the electronic self-energies and density of states exhibit behavior with divergences near half-filling. As a consequence, the spectral functions and conductivities do not follow Landau's Fermi liquid theory. In particular, we show that the quasiparticle decay rate has a minimum as a function of energy, there is a universal minimum value for the in-plane conductivity of order e^2/h per plane and, unexpectedly, the c-axis conductivity is enhanced by disorder at low doping, leading to an enormous conductivity anisotropy at low temperatures.

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preprint2005arXiv

Fixed Points of the Dissipative Hofstadter Model

The phase diagram of a dissipative particle in a periodic potential and a magnetic field is studied in the weak barrier limit and in the tight-biding regime. For the case of half flux per plaquette, and for a wide range of values of the dissipation, the physics of the model is determined by a non trivial fixed point. A combination of exact and variational results is used to characterize this fixed point. Finally, it is also argued that there is an intermediate energy scale that separates the weak coupling physics from the tight-binding solution.

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preprint1997arXiv

Non Equilibrium Electronic Distribution in Single Electron Devices

The electronic distribution in devices with sufficiently small diemnsions may not be in thermal equilibrium with their surroundings. Systems where the occupancies of electronic states are solely determined by tunneling processes are analyzed. It is shown that the effective temperature of the device may be higher, or lower, than that of its environment, depending on the applied voltage and the energy dependence of the tunneling rates. The I-V characteristics become asymmetric. Comparison with recent experiments is made.

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preprint1996arXiv

Point-contact spectroscopy on URu$_2$Si$_2$

Tunnel and point contact experiments have been made in a URu$_2$Si$_2$ single crystal along the c-axis. The experiments were performed changing temperature and contact size in a low temperature scanning tunneling microscope. A resonance develops at the Fermi level at $T\sim 60$ K. This resonance splits and becomes asymmetric when the 17.5 K phase transition is crossed. These results are consistent with the existence of Kondo like bound states of the U$^{4+}$ ionic configurations and the conduction electrons. Below the transition, these configurations are split by the development of quadrupolar ordering. The peak separation can be interpreted as a direct measurement of the order parameter. Measurements on a policrystalline UAu_2Si_2$ sample are also reported, with a comparative study of the behavior of both materials.

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preprint1995arXiv

Renormalization group analysis of electrons near a Van Hove singularity.

A model of interacting two dimensional electrons near a Van Hove singularity is studied, using renormalization group techniques. In hole doped systems, the chemical potential is found to be pinned near the singularity, when the electron-electron interactions are repulsive. The RG treatment of the leading divergences appearing in perturbation theory give rise to marginal behavior and anisotropic superconductivity.

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preprint1993arXiv

Electrostatic screening in fullerene molecules

The screening properties of fullerene molecules are described by means of a continuum model which uses the electronic wavefunctions of planar graphite as a starting point. The long distance behavior of the system gives rise to a renormalizable theory, which flows towards a non trivial fixed point. Its existence implies an anomalous dielectric constant. The screening properties are neither metallic nor insulating. Alternatively, the intramolecular screening is obtained from a simple approximation to the electronic wavefunctions. Intermolecular effects are also calculated. As a consistency check, it is shown that the observed polarizability of C$_{60}$ is well eproduced.

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