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Researcher profile

A. S. Rodin

A. S. Rodin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.supr-conphysics.optics

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Trust 21 - EmergingVerification L1Unclaimed author
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Published work

15 published item(s)

preprint2016arXiv

Multiferroic Two-Dimensional Materials

The relation between unusual Mexican-hat band dispersion, ferromagnetism and ferroelasticity is investigated using a combination of analytical, first-principles and phenomenological methods. The class of material with Mexican-hat band edge is studied using the $α$-SnO monolayer as a prototype. Such band edge causes a van Hove singularity diverging with $\frac{1}{\sqrt{E}}$, and in p-type material leads to spatial and/or time-reversal spontaneous symmetry breaking. We show that an unexpected multiferroic phase is obtained in a range of hole density for which the material presents ferromagnetism and ferroelasticity simultaneously.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exciton binding energies and luminescence of phosphorene under pressure

The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only the gap between the valence band and conduction band local extrema, but also the effective masses, and in consequence, the exciton anisotropy and binding strength. In this article, we consider from a theoretical point of view how the exciton stability and the resulting luminescence energy evolves under uniaxial strain. We find that the exciton binding energy can be as large as 0.87 eV in vacuum for 5% transverse strain, placing it amongst the highest for 2D materials. Further, the large shift of the luminescence peak and its linear dependence on strain suggest that it can be used to probe directly the strain state of single-layers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunneling Plasmonics in Bilayer Graphene

We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nano-imaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tunneling. Moreover, we were able to shut off plasmons in bilayer graphene through gating within a wide voltage range. Theoretical modeling indicates that such a plasmon-off region is directly linked to a gapped insulating state of bilayer graphene: yet another implication of interlayer tunneling. Our work uncovers essential plasmonic properties in bilayer graphene and suggests a possibility to achieve novel plasmonic functionalities in graphene few-layers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Valleytronics in Tin (II) Sulfide

Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional form of this material using a combination of \emph{ab initio} calculation and $\mathbf{k}\cdot\mathbf{p}$ theory. In particular, we address the valley properties and the optical selection rules of 2D SnS. Our study reveals SnS as an extraordinary material for valleytronics, where pairs of equivalent valleys are placed along two perpendicular axes, can be selected exclusively with linear polarized light, and can be separated using non-local electrical measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Excitons in anisotropic 2D semiconducting crystals

The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding energy in phosphorene as a function of the substrate dielectric constant.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Infrared nano-spectroscopy and imaging of collective superfluid excitations in conventional and high-temperature superconductors

We investigate near-field infrared spectroscopy and superfluid polariton imaging experiments on conventional and unconventional superconductors. Our modeling shows that near-field spectroscopy can measure the magnitude of the superconducting energy gap in Bardeen-Cooper-Schrieffer-like superconductors with nanoscale spatial resolution. We demonstrate how the same technique can measure the c-axis plasma frequency, and thus the c-axis superfluid density, of layered unconventional superconductors with a similar spatial resolution. Our modeling also shows that near-field techniques can image superfluid surface mode interference patterns near physical and electronic boundaries. We describe how these images can be used to extract the collective mode dispersion of anisotropic superconductors with sub-diffractional spatial resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phosphorene nanoribbons

Edge-induced gap states in finite phosphorene layers are examined using analytical models and density functional theory. The nature of such gap states depends on the direction of the cut. Armchair nanoribbons are insulating, whereas nanoribbons cut in the perpendicular direction (with zigzag and cliff-type edges) are metallic, unless they undergo a reconstruction or distortion with cell doubling, which opens a gap. All stable nanoribbons with unsaturated edges have gap states that can be removed by hydrogen passivation. Armchair nanoribbon edge states decay exponentially with the distance to the edge and can be described by a nearly-free electron model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tunable optical properties of multilayers black phosphorus thin films

Black phosphorus thin films might offer attractive alternatives to narrow gap compound semiconductors for optoelectronics across mid- to near-infrared frequencies. In this work, we calculate the optical conductivity tensor of multilayer black phosphorus thin films using the Kubo formula within an effective low-energy Hamiltonian. The optical absorption spectra of multilayer black phosphorus are shown to vary sensitively with thickness, doping, and light polarization. In conjunction with experimental spectra obtained from infrared absorption spectroscopy, we also discuss the role of interband coupling and disorder on the observed anisotropic absorption spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic and plasmonic phenomena at graphene grain boundaries

Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Excitonic Collapse in Semiconducting Transition Metal Dichalcogenides

Semiconducting transition metal dichalcogenides (STMDC) are two-dimensional (2D) crystals characterized by electron volt size band gaps, spin-orbit coupling (SOC), and d-orbital character of its valence and conduction bands. We show that these materials carry unique exciton quasiparticles (electron-hole bound states) with energy within the gap but which can ``collapse'' in the strong coupling regime by merging into the band structure continuum. The exciton collapse seems to be a generic effect in these 2D crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Plasmonic Hot Spots in Triangular Tapered Graphene Microcrystals

Recently, plasmons in graphene have been observed experimentally using scattering scanning near-field optical microscopy. In this paper, we develop a simplified analytical approach to describe the behavior in triangular samples. Replacing Coulomb interaction by a short-range one reduces the problem to a Helmholtz equation, amenable to analytical treatment. We demonstrate that even with our simplifications, the system still exhibits the key features seen in the experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning of its electronic and optical properties with gate voltage. Through infrared nano-imaging we explicitly show that common graphene/SiO2/Si back-gated structures support propagating surface plasmons. The wavelength of graphene plasmons is of the order of 200 nm at technologically relevant infrared frequencies, and they can propagate several times this distance. We have succeeded in altering both the amplitude and wavelength of these plasmons by gate voltage. We investigated losses in graphene using plasmon interferometry: by exploring real space profiles of plasmon standing waves formed between the tip of our nano-probe and edges of the samples. Plasmon dissipation quantified through this analysis is linked to the exotic electrodynamics of graphene. Standard plasmonic figures of merits of our tunable graphene devices surpass that of common metal-based structures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hopping transport in systems of finite thickness or length

Variable-range hopping transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the hopping resistor network are shown to depend on temperature T and the dimensionality of the system. In two and three dimensions the usual Mott law applies at high T where the correlation length of the network is smaller than the sample thickness. As T decreases, the network breaks into sparse filamentary paths, while the Mott law changes to a different T-dependence, which is derived using the percolation theory methods. In one dimension, deviations from the Mott law are known to exist at all temperatures because of rare fluctuations. The evolution of such fluctuations from highly-resistive "breaks" at high T to highly-conducting "shorts" at low T is elucidated.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Apparent power-law behavior of conductance in disordered quasi-one-dimensional systems

Dependence of hopping conductance on temperature and voltage for an ensemble of modestly long one-dimensional wires is studied numerically using the shortest-path algorithm. In a wide range of parameters this dependence can be approximated by a power-law rather than the usual stretched-exponential form. Relation to recent experiments and prior analytical theory is discussed.

0 citations0 reviewsNo code linkedOpen access