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Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters.

preprint2013arXivOpen access
V. V. VanovskyV. S. KhrapaiA. A. ShashkinV. PellegriniL. SorbaG. Biasiol
cond-mat.mes-hallcond-mat.str-el
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V. V. VanovskyV. S. KhrapaiA. A. ShashkinV. PellegriniL. SorbaG. Biasiol

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