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V. Pellegrini

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Published work

12 published item(s)

preprint2016arXiv

Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed.

preprint2014arXiv

Electron-hole pairing in graphene-GaAs heterostructures

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a single-layer (or bilayer) graphene carrying a fluid of massless (massive) chiral carriers, and a quantum well created in GaAs 31.5 nm below the surface, supporting a high-mobility two-dimensional electron gas. These are a new class of double-layer devices composed of spatially-separated electron and hole fluids. We find that the Coulomb drag resistivity significantly increases for temperatures below 5-10 K, following a logarithmic law. This anomalous behavior is a signature of the onset of strong inter-layer correlations, compatible with the formation of a condensate of permanent excitons. The ability to induce strongly-correlated electron-hole states paves the way for the realization of coherent circuits with minimal dissipation and nanodevices including analog-to-digital converters and topologically protected quantum bits.

preprint2014arXiv

Tunable non-equilibrium Luttinger liquid based on counter-propagating edge channels

We investigate energy transfer between counter-propagating quantum Hall edge channels (ECs) in a two-dimensional electron system at filling factor ν=1. The ECs are separated by a thin impenetrable potential barrier and Coulomb coupled, thereby constituting a quasi one-dimensional analogue of a spinless Luttinger liquid (LL). We drive one, say hot, EC far from thermal equilibrium and measure the energy transfer rate P into the second, cold, EC using a quantum point contact as a bolometer. The dependence of P on the drive bias indicates breakdown of the momentum conservation, whereas P is almost independent on the length of the region where the ECs interact. Interpreting our results in terms of plasmons (collective density excitations), we find that the energy transfer between the ECs occurs via plasmon backscattering at the boundaries of the LL. The backscattering probability is determined by the LL interaction parameter and can be tuned by changing the width of the electrostatic potential barrier between the ECs.

preprint2013arXiv

Electrostatic tailoring of magnetic interference in quantum point contact ballistic Josephson junctions

The magneto-electrostatic tailoring of the supercurrent in quantum point contact ballistic Josephson junctions is demonstrated. An etched InAs-based heterostructure is laterally contacted to superconducting niobium leads and the existence of two etched side gates permits, in combination with the application of a perpendicular magnetic field, to modify continuously the magnetic interference pattern by depleting the weak link. For wider junctions the supercurrent presents a Fraunhofer-like interference pattern with periodicity h/2e whereas by shrinking electrostatically the weak link, the periodicity evolves continuously to a monotonic decay. These devices represent novel tunable structures that might lead to the study of the elusive Majorana fermions.

preprint2013arXiv

Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters.

preprint2012arXiv

A ballistic quantum ring Josephson interferometer

We report the realization of a ballistic Josephson interferometer. The interferometer is made by a quantum ring etched in a nanofabricated two-dimensional electron gas confined in an InAs-based heterostructure laterally contacted to superconducting niobium leads. The Josephson current flowing through the structure shows oscillations with h/e flux periodicity when threading the loop with a perpendicular magnetic field. This periodicity, in sharp contrast with the h/2e one observed in conventional dc superconducting quantum interference devices, confirms the ballistic nature of the device in agreement with theoretical predictions. This system paves the way for the implementation of interferometric Josephson pi-junctions, and for the investigation of Majorana fermions.

preprint2012arXiv

Graphene field effect transistors as room-temperature Terahertz detectors

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples.

preprint2012arXiv

Influence of e-e scattering on the temperature dependence of the resistance of a classical ballistic point contact in a two-dimensional electron system

We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly linear below 2 K and tends to saturate at higher T. Perpendicular magnetic fields on the order of a few 10 mT suppress the T-dependent contribution dR. This effect is more pronounced at lower temperatures, causing a crossover to a nearly parabolic T dependence in a magnetic field. The normalized magnetic field dependencies dR(B) permit an empiric single parameter scaling in a wide range of PC gate voltages. These observations give strong evidence for the influence of electron-electron (e-e) scattering on the resistance of ballistic PCs. Our results are in qualitative agreement with a recent theory of the e-e scattering based T dependence of the conductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) and Phys. Rev. B 81 125316 (2010)].

preprint2011arXiv

Two-dimensional Mott-Hubbard electrons in an artificial honeycomb lattice

Electrons in artificial lattices enable explorations of the impact of repulsive Coulomb interactions in a tunable system. We have trapped two-dimensional electrons belonging to a gallium arsenide quantum well in a nanofabricated lattice with honeycomb geometry. We probe the excitation spectrum in a magnetic field identifying novel collective modes that emerge from the Coulomb interaction in the artificial lattice as predicted by the Mott-Hubbard model. These observations allow us to determine the Hubbard gap and suggest the existence of a novel Coulomb-driven ground state. This approach offers new venues for the study of quantum phenomena in a controllable solid-state system.

preprint2010arXiv

Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.

preprint2010arXiv

Observation of magneto-phonon resonance of Dirac fermions in graphite

Coherent coupling of Dirac fermion magneto-excitons with an optical phonon is observed in graphite as marked magnetic-field dependent splittings and anti-crossing behavior of the two coupled modes. The sharp magneto-phonon resonance occurs in regions of the graphite sample with properties of superior single-layer graphene having enhanced lifetimes of Dirac fermions. The greatly reduced carrier broadening to values below the graphene electron-phonon coupling constant explains the appearance of sharp resonances that reveal a fundamental interaction of Dirac fermions.

preprint2010arXiv

Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

The magnetic-field evolution of Coulomb blockade peaks in lateral InGaAs/InAlAs quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60 nm-thick hydrogen silsesquioxane insulating film. A gyromagnetic factor of 4.4 is measured via zero-bias spin spectroscopy and a transition from singlet to triplet spin configuration is found at an in-plane magnetic field B = 0.7 T. This observation opens the way to the manipulation of singlet and triplet states at moderate fields and its relevance for quantum information applications will be discussed.