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Researcher profile

G. Biasiol

G. Biasiol contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.opticsquant-ph

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Published work

5 published item(s)

preprint2022arXiv

Intersubband polariton-polariton scattering in a dispersive microcavity

The ultrafast scattering dynamics of intersubband polaritons in dispersive cavities embedding GaAs/AlGaAs quantum wells are studied directly within their band structure using a non-collinear pump-probe geometry with phase-stable mid-infrared pulses. Selective excitation of the lower polariton at a frequency of ~25 THz and at a finite in-plane momentum, $k_{||}$, leads to the emergence of a narrowband maximum in the probe reflectivity at $k_{||}=0$. A quantum mechanical model identifies the underlying microscopic process as stimulated coherent polariton-polariton scattering. These results mark an important milestone towards quantum control and bosonic lasing in custom-tailored polaritonic systems in the mid and far-infrared.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$

We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates.

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preprint2010arXiv

Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

The magnetic-field evolution of Coulomb blockade peaks in lateral InGaAs/InAlAs quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60 nm-thick hydrogen silsesquioxane insulating film. A gyromagnetic factor of 4.4 is measured via zero-bias spin spectroscopy and a transition from singlet to triplet spin configuration is found at an in-plane magnetic field B = 0.7 T. This observation opens the way to the manipulation of singlet and triplet states at moderate fields and its relevance for quantum information applications will be discussed.

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preprint2009arXiv

Impact of classical forces and decoherence in multi-terminal Aharonov-Bohm networks

Multi-terminal Aharonov-Bohm (AB) rings are ideal building blocks for quantum networks (QNs) thanks to their ability to map input states into controlled coherent superpositions of output states. We report on experiments performed on three-terminal GaAs/Al_(x)Ga_(1-x)As AB devices and compare our results with a scattering-matrix model including Lorentz forces and decoherence. Our devices were studied as a function of external magnetic field (B) and gate voltage at temperatures down to 350 mK. The total output current from two terminals while applying a small bias to the third lead was found to be symmetric with respect to B with AB oscillations showing abrupt phase jumps between 0 and pi at different values of gate voltage and at low magnetic fields, reminiscent of the phase-rigidity constraint due to Onsager-Casimir relations. Individual outputs show quasi-linear dependence of the oscillation phase on the external electric field. We emphasize that a simple scattering-matrix approach can not model the observed behavior and propose an improved description that can fully describe the observed phenomena. Furthermore, we shall show that our model can be successfully exploited to determine the range of experimental parameters that guarantee a minimum oscillation visibility, given the geometry and coherence length of a QN.

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